Copper-based metal polishing solution and method for manufacturing semiconductor device

Abstract

Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one organic acid selected from aminoacetic acid and amidosulfuric aminosulfuric acid, an oxidizer, and water.

What is claimed is:  
     
       1. A copper-based metal polishing solution  composition containing at least one organic  acid selected from the group consisting of aminoacetic acid and amidosulfuric  aminosulfuric acid, an oxidizer, and water. 
     
     
       2. The polishing solution  composition according to  claim 1 , wherein said oxidizer is hydrogen peroxide. 
     
     
       3. The polishing solution  composition according to  claim 1 , wherein said organic  acid is contained in an amount of 0.01 to 10 wt % in said polishing solution, and a content ratio of said organic  acid to said oxidizer is 1 to not less than 20 as a weight ratio. 
     
     
       4. The polishing solution  composition according to  claim 3 , wherein said organic  acid is contained in an amount of 0.01 to 1 wt % in said polishing solution. 
     
     
       5. The polishing solution  composition according to  claim 3 , wherein the content ratio of said organic  acid to said oxidizer is 1 to not less than 40 as a weight ratio. 
     
     
       6. The polishing solution  composition according to  claim 3 , wherein said oxidizer is contained in an amount of a maximum of 30 wt % in said polishing solution  composition. 
     
     
       7. The polishing solution  composition according to  claim 1 , further containing an alkaline agent for adjusting a pH of the solution between 9 and 14. 
     
     
       8. The polishing solution  composition according to  claim 7 , wherein said alkaline agent is potassium hydroxide. 
     
     
       9. The polishing solution  composition according to  claim 7 , wherein said alkaline agent is quinoline. 
     
     
       10. The polishing solution  composition according to  claim 1 , further containing abrasive grains. 
     
     
       11. The polishing solution  composition according to  claim 10 , wherein said abrasive grain is made of at least one material selected from the group consisting of silica, zirconia, cerium oxide and alumina. 
     
     
       12. The polishing solution  composition according to  claim 10 , wherein said abrasive grains have a mean grain size of 0.02 to 0.1 μm. 
     
     
       13. The polishing solution  composition according to  claim 10 , wherein said abrasive grains are contained in an amount of 1 to 14 wt % in said polishing solution  composition. 
     
     
       14. The polishing solution  composition according to  claim 10 , wherein said abrasive grains are contained in an amount of 3 to 10 wt % in said polishing solution  composition. 
     
     
       15. A method for manufacturing a semiconductor device, comprising the steps of: 
       forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       depositingforming an interconnection material film consisting of copper or a copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening; and  
       polishing said interconnection material film until a surface of said insulating film is exposed by using a polishing solution  composition containing at least one organic  acid selected from the group consisting of aminoacetic acid and amidosulfuric  aminosulfuric acid, an oxidizer, and water, thereby forming a buried interconnecting layer in said insulating film such that surfaces of said interconnecting layer and said insulting  insulating film are level with each other.  
     
     
       16. The method according to  claim 15 , wherein said insulating film is a silicon oxide film. 
     
     
       17. The method according to  claim 15 , wherein said insulating film has a two-layer structure constituted by a silicon oxide film and a silicon nitride film formed on said silicon oxide film. 
     
     
       18. The method according to  claim 15 , wherein a barrier layer is formed on said insulating film including said at least one member selected from the group consisting of a trench and an opening prior to depositing said interconnection material film. 
     
     
       19. The method according to  claim 18 , wherein said barrier layer is made of one material selected from the group consisting of TiN, Ti, Nb, W, and a CuTa alloy. 
     
     
       20. The method according to  claim 19 , wherein said barrier layer has a thickness of 15 to 50 nm. 
     
     
       21. The method according to  claim 15 , wherein said Cu alloy is one material selected from the group consisting of a Cu—Si alloy, a Cu—Al alloy, a Cu—Si—Al alloy, and a Cu—Ag alloy. 
     
     
       22. The method according to  claim 15 , wherein said oxidizer is hydrogen peroxide. 
     
     
       23. The method according to  claim 15 , wherein said organic  acid is contained in an amount of 0.01 to 10 wt % in said polishing solution  composition, and a content ratio of said organic  acid to said oxidizer is 1 to not less than 20 as a weight ratio. 
     
     
       24. The method according to  claim 23 , wherein said organic  acid is contained in an amount of 0.01 to 1 wt % in said polishing solution  composition. 
     
     
       25. The method according to  claim 23 , wherein the content ratio of said organic  acid to said oxidizer is 1 to not less than 40 as a weight ratio. 
     
     
       26. The method according to  claim 23 , wherein said oxidizer is contained in an amount of a maximum of 30 wt % in said polishing solution  composition. 
     
     
       27. The method according to  claim 15 , wherein said polishing solution  composition further contains an alkaline agent for adjusting a pH of the solution between 9 and 14. 
     
     
       28. The method according to  claim 27 , wherein said alkaline agent is potassium hydroxide. 
     
     
       29. The method according to  claim 27 , wherein said alkaline agent is quinoline. 
     
     
       30. The method according to  claim 15 , wherein said polishing solution  composition further contains abrasive grains. 
     
     
       31. The method according to  claim 30 , wherein said abrasive grain is made of at least one material selected from the group consisting of silica, zirconia, cerium oxide, and alumina. 
     
     
       32. The method according to  claim 30 , wherein said abrasive grains have a mean grain size of 0.02 to 0.1 μm. 
     
     
       33. The method according to  claim 30 , wherein said abrasive grains are contained in an amount of 1 to 14 wt % in said polishing solution  composition. 
     
     
       34. The method according to  claim 30 , wherein said abrasive grains are contained in an amount of 3 to 10 wt % in said polishing solution  composition. 
     
     
       35. The method according to  claim 15 , wherein the polishing is performed by using apparatus comprising a turntable covered with a polishing pad, means for supplying said polishing solution  composition to said polishing pad of said turntable, and a substrate holder which holds said semiconductor substrate on a lower surface thereof and rotates said substrate while pressing said substrate against said polishing pad. 
     
     
       36. The method according to  claim 35 , wherein an end point of the polishing is detected n the basis of a change in torque of said turntable of said polishing apparatus. 
     
     
       37. The method to  claim 35 , wherein an end point of the polishing is detected on the basis of a change in temperature of said polishing pad. 
     
     
       38. The method according to  claim 35 , wherein an end point of the polishing is detected on the basis of a change in pH of said polishing solution  composition supplied to said polishing pad. 
     
     
       39. A method for manufacturing a semiconductor device, comprising the steps of: 
       forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       depositingforming an interconnection material film consisting of copper or a copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening;  
       polishing said interconnection material film until a surface of said insulating film is exposed by using a polishing solution  composition containing at least one organic  acid selected from the group consisting of aminoacetic acid and amidosulfuric  aminosulfuric acid, an oxidizer, and water, thereby forming a buried interconnecting layer in said insulating film such that surfaces of said interconnecting layer and said insulting  insulating film are level with each other; and  
       treating the surface of said insulating film including said interconnecting layer with an aqueous dissolved ozone solution and then with an aqueous dilute hydrofluoric acid solution.  
     
     
       40. The method according to  claim 39 , wherein said insulating film is a silicon oxide film. 
     
     
       41. The method according to  claim 39 , wherein said insulating film has a two-layer structure constituted by a silicon oxide film and a silicon nitride film formed on said silicon oxide film. 
     
     
       42. The method according to  claim 39 , wherein a barrier layer is formed on said insulating film including said at least one member selected from the group consisting of a trench and an opening prior to depositing said interconnection material film. 
     
     
       43. The method according to  claim 42 , wherein said barrier layer is made of one material selected from the group consisting of TiN, Ti, Nb, W, and a CuTa alloy. 
     
     
       44. The method according to  claim 42 , wherein said barrier layer has a thickness of 15 to 50 nm. 
     
     
       45. The method according to  claim 39 , wherein said Cu alloy is one material selected from the group consisting of a Cu—Si alloy, a Cu—Al alloy, a Cu—Si—Al alloy, and a Cu—Ag alloy. 
     
     
       46. The method according to  claim 39 , wherein said oxidizer is hydrogen peroxide. 
     
     
       47. The method according to  claim 39 , wherein said organic  acid is contained in an amount of 0.01 to 10 wt % in said polishing solution  composition, and a content ratio of said organic  acid to said oxidizer is 1 to not less than 20 as a weight ratio. 
     
     
       48. The method according to  claim 47 , wherein said organic  acid is contained in an amount of 0.01 to 1 wt % in said polishing solution  composition. 
     
     
       49. The method according to  claim 47 , wherein the content ratio of said organic  acid to said oxidizer is 1 to not less than 40 as a weight ratio. 
     
     
       50. The method according to  claim 47 , wherein said oxidizer is contained in an amount of a maximum of 30 wt % in said polishing solution  composition. 
     
     
       51. The method according to  claim 39 , wherein said polishing solution  composition further contains an alkaline agent for adjusting a pH of the solution between 9 and 14. 
     
     
       52. The method according to  claim 51 , wherein said alkaline agent is potassium hydroxide. 
     
     
       53. The method according to  claim 51 , wherein said alkaline agent is quinoline. 
     
     
       54. The method according to  claim 39 , wherein said polishing solution  composition further contains abrasive grains. 
     
     
       55. The method according to  claim 54 , wherein said abrasive grain is made of at least one material selected from the group consisting of silica, zirconia, cerium oxide, and alumina. 
     
     
       56. The method according to  claim 54 , wherein said abrasive grains have a mean grain size of 0.02 to 0.1 μm. 
     
     
       57. The method according to  claim 54 , wherein said abrasive grains are contained in an amount of 1 to 14 wt % in said polishing solution  composition. 
     
     
       58. The method according to  claim 54 , wherein said abrasive grains are contained in an amount of 3 to 10 wt % in said polishing solution  composition. 
     
     
       59. The method according to  claim 39 , wherein the polishing is performed by using a polishing apparatus comprising a turntable covered with a polishing pad, means for supplying said polishing solution  composition to said polishing pad of said turntable, and a substrate holder which holds said semiconductor substrate on a lower surface thereof and rotates said substrate while pressing said substrate against said polishing pad. 
     
     
       60. The method according to  claim 59 , wherein an end point of the polishing is detected on the basis of a change in torque of said turntable of said polishing apparatus. 
     
     
       61. The method according to  claim 59 , wherein an end point of the polishing is detected on the basis of a change in temperature of said polishing pad. 
     
     
       62. The method according to  claim 59 , wherein an end point of the polishing is detected on the basis of a change in pH of said polishing solution  composition supplied to said polishing pad. 
     
     
       63. The method according to  claim 39 , wherein said aqueous dissolved ozone solution has an ozone concentration of 0.1 to 25 ppm. 
     
     
       64. The method according to  claim 39 , wherein said aqueous dissolved ozone solution has an ozone concentration of 5 to 25 ppm. 
     
     
       65. The method according to  claim 39 , wherein said aqueous dilute hydrofluoric acid solution has a hydrofluoric acid concentration of 0.05 to 20%. 
     
     
       66. The method according to  claim 39 , wherein said aqueous dilute hydrofluoric acid solution has a hydrofluoric acid concentration of 0.1 to 5%. 
     
     
       67. A copper- based metal polishing composition, comprising aminoacetic acid, an oxidizer, and water.   
     
     
       68. The polishing composition according to  claim 67 , wherein said oxidizer is hydrogen peroxide. 
     
     
       69. The polishing composition according to  claim 67 , wherein said aminoacetic acid is contained in an amount of  0 . 01  to  10  wt %  in said polishing composition, and a content ratio of said aminoacetic acid to said oxidizer is  1  to not less than  20  as a weight ratio.   
     
     
       70. The polishing composition according to  claim 69 , wherein said aminoacetic acid is contained in an amount of  0 . 01  to  1  wt %  in said polishing composition.   
     
     
       71. The polishing composition according to  claim 69 , wherein the content ratio of said aminoacetic acid to said oxidizer agent is  1  to not less than  40  as a weight ratio. 
     
     
       72. The polishing composition according to  claim 69 , wherein said oxidizer is contained in an amount of a maximum of  30  wt %  in said polishing composition.   
     
     
       73. The polishing composition according to  claim 67 , further containing an alkaline agent for adjusting a pH of the composition between  9  and  14 . 
     
     
       74. The polishing composition according to  claim 73 , wherein said alkaline agent is potassium hydroxide. 
     
     
       75. The polishing composition according to  claim 73 , wherein said alkaline agent is quinoline. 
     
     
       76. The polishing composition according to  claim 67 , further comprising abrasive grains. 
     
     
       77. The polishing composition according to  claim 76 , wherein said abrasive grains are made of at least one material selected from the group consisting of silica, zirconia, cerium oxide, and alumina. 
     
     
       78. The polishing composition according to  claim 76 , wherein said abrasive grains have a mean grain size of  0 . 02  to  0 . 1  μm. 
     
     
       79. The polishing composition according to  claim 76 , wherein said abrasive grains are contained in an amount of  1  to  14  wt %  in said polishing composition.   
     
     
       80. The polishing composition according to  claim 76 , wherein said abrasive grains are contained in an amount of  3  to  10  wt %  in said polishing composition.   
     
     
       81. A method for manufacturing a semiconductor device, comprising the steps of: 
       
         forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       
       
         forming an interconnection material film consisting of copper or copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening; and  
       
       
         polishing said interconnection material film by using a polishing composition comprising aminoacetic acid, an oxidizer, and water, thereby forming an interconnection layer in said insulating film. 
       
     
     
       82. The method according to  claim 81 , wherein said insulating film is a silicon oxide film. 
     
     
       83. The method according to  claim 81 , wherein said insulating film has a two- layer structure constituted by a silicon oxide film and a silicon nitride film formed on said silicon oxide film.   
     
     
       84. The method according to  claim 81 , wherein a barrier layer is formed on said at least one member selected from the group consisting of a trench and an opening prior to forming said interconnection material film. 
     
     
       85. The method according to  claim 84 , wherein said barrier layer is made of one material selected from the group consisting of TiN, Ti, Nb, W, and a CuTa alloy. 
     
     
       86. The method according to  claim 85 , wherein said barrier layer has a thickness of  15  to  50  nm. 
     
     
       87. The method according to  claim 81 , wherein said Cu alloy is one material selected from the group consisting of a Cu—Si alloy, a Cu—Al alloy, a Cu—Si—Al alloy, and a Cu—Ag alloy. 
     
     
       88. The method according to  claim 81 , wherein said oxidizer is hydrogen peroxide. 
     
     
       89. The method according to  claim 81 , wherein said aminoacetic acid is contained in an amount of  0 . 01  to  10  wt %  in said polishing composition, and a content ratio of said aminoacetic acid to said oxidizer is  1  to not less than  20  as a weight ratio.   
     
     
       90. The method according to  claim 89 , wherein said aminoacetic acid is contained in an amount of  0 . 01  to  1  wt %  in said polishing composition.   
     
     
       91. The method according to  claim 89 , wherein the content ratio of said aminoacetic acid to said chemical agent is  1  to not less than  40  as a weight ratio. 
     
     
       92. The method according to  claim 89 , wherein said oxidizer is contained in an amount of a maximum of  30  wt %  in said polishing composition.   
     
     
       93. The method according to  claim 81 , wherein said polishing composition further comprises an alkaline agent for adjusting a pH of the polishing composition between  9  and  14 . 
     
     
       94. The method according to  claim 93 , wherein said alkaline agent is potassium hydroxide. 
     
     
       95. The method according to  claim 93 , wherein said alkaline agent is quinoline. 
     
     
       96. The method according to  claim 81 , wherein said polishing composition further comprises abrasive grains. 
     
     
       97. The method according to  claim 96 , wherein said abrasive grain is made of at least one material selected from the group consisting of silica, zirconia, cerium oxide, and alumina. 
     
     
       98. The method according to  claim 96 , wherein said abrasive grains have a mean grain size of  0 . 02  to  0 . 1  μm. 
     
     
       99. The method according to  claim 96 , wherein said abrasive grains are contained in an amount of  1  to  14  wt %  in said polishing composition.   
     
     
       100. The method according to  claim 96 , wherein said abrasive grains are contained in an amount of  3  to  10  wt %  in said polishing composition.   
     
     
       101. The method according to  claim 81 , wherein the polishing is performed by using an apparatus comprising a turntable covered with a polishing pad, means for supplying said polishing composition to said polishing pad of said turntable, and a substrate holder which holds said semiconductor substrate on a lower surface thereof and rotates said substrate while pressing said substrate against said polishing pad. 
     
     
       102. The method according to  claim 101 , wherein an end point of the polishing is detected on the basis of a change in torque of said turntable of said polishing apparatus. 
     
     
       103. The method according to  claim 101 , wherein an end point of the polishing is detected on the basis of a change in temperature of said polishing pad. 
     
     
       104. The method according to  claim 101 , wherein an end point of the polishing is detected on the basis of a change in pH of said polishing composition supplied to said polishing pad. 
     
     
       105. A method for manufacturing a semiconductor device, comprising the steps of: 
       
         forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       
       
         forming an interconnection material film consisting of copper or copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening;  
       
       
         polishing said interconnection material film by using a polishing composition comprising aminoacetic acid, an oxidizer, and water, thereby forming an interconnection layer in said insulating film; and  
       
       
         treating the surface of said insulating film including said interconnection layer with an aqueous dissolved ozone solution and then with an aqueous dilute hydrofluoric acid solution. 
       
     
     
       106. The method according to  claim 105 , wherein said insulating film is a silicon oxide film. 
     
     
       107. The method according to  claim 105 , wherein said insulating film has a two- layer structure constituted by a silicon oxide film and a silicon nitride film formed on said silicon oxide film.   
     
     
       108. The method according to  claim 105 , wherein a barrier layer is formed on said insulating film including said at least one member selected from the group consisting of a trench and an opening prior to forming said interconnection material film. 
     
     
       109. The method according to  claim 108 , wherein said barrier layer is made of one material selected from the group consisting of TiN, Ti, Nb, W, and a CuTa alloy. 
     
     
       110. The method according to  claim 108 , wherein said barrier layer has a thickness of  15  to  50  nm. 
     
     
       111. The method according to  claim 105 , wherein said Cu alloy is one material selected from the group consisting of a Cu—Si alloy, a Cu—Al alloy, a Cu—Si—Al alloy, and a Cu—Ag alloy. 
     
     
       112. The method according to  claim 105 , wherein said oxidizer is hydrogen peroxide. 
     
     
       113. The method according to  claim 105 , wherein said aminoacetic acid is contained in an amount of  0 . 01  to  10  wt %  in said polishing composition, and a content ratio of said aminoacetic acid to said oxidizer is  1  to not less than  20  as a weight ratio.   
     
     
       114. The method according to  claim 113 , wherein said aminoacetic acid is contained in an amount of  0 . 01  to  1  wt %  in said polishing composition.   
     
     
       115. The method according to  claim 113 , wherein the content ratio of said aminoacetic acid to said oxidizer is  1  to not less than  40  as a weight ratio. 
     
     
       116. The method according to  claim 113 , wherein said oxidizer is contained in an amount of a maximum of  30  wt %  in said polishing composition.   
     
     
       117. The method according to  claim 105 , wherein said polishing composition further comprises an alkaline agent for adjusting a pH of the polishing composition between  9  and  14 . 
     
     
       118. The method according to  claim 117 , wherein said alkaline agent is potassium hydroxide. 
     
     
       119. The method according to  claim 117 , wherein said alkaline agent is quinoline. 
     
     
       120. The method according to  claim 105 , wherein said polishing composition further comprises abrasive grains. 
     
     
       121. The method according to  claim 120 , wherein said abrasive grains are made of at least one material selected from the group consisting of silica, zirconia, cerium oxide, and alumina. 
     
     
       122. The method according to  claim 120 , wherein said abrasive grains have a mean grain size of  0 . 02  to  0 . 1  μm. 
     
     
       123. The method according to  claim 120 , wherein said abrasive grains are contained in an amount of  1  to  14  wt %  in said polishing composition.   
     
     
       124. The method according to  claim 120 , wherein said abrasive grains are contained in an amount of  3  to  10  wt %  in said polishing composition.   
     
     
       125. The method according to  claim 105 , wherein the polishing is performed by using an apparatus comprising a turntable covered with a polishing pad, means for supplying said polishing composition to said polishing pad of said turntable, and a substrate holder which holds said semiconductor substrate on a lower surface thereof and rotates said substrate while pressing said substrate against said polishing pad. 
     
     
       126. The method according to  claim 125 , wherein an end point of the polishing is detected on the basis of a change in torque of said turntable of said polishing apparatus. 
     
     
       127. The method according to  claim 125 , wherein an end point of the polishing is detected on the basis of a change in temperature of said polishing pad. 
     
     
       128. The method according to  claim 125 , wherein an end point of the polishing is detected on the basis of a change in pH of said polishing composition supplied to said polishing pad. 
     
     
       129. The method according to  claim 105 , wherein said aqueous dissolved ozone solution has an ozone concentration of  0 . 1  to  25  ppm. 
     
     
       130. The method according to  claim 105 , wherein said aqueous dissolved ozone solution has an ozone concentration of  5  to  25  ppm. 
     
     
       131. The method according to  claim 105 , wherein said aqueous dilute hydrofluoric acid solution has a hydrofluoric acid concentration of  0 . 05  to  20 % .   
     
     
       132. The method according to  claim 105 , wherein said aqueous dilute hydrofluoric acid solution has a hydrofluoric acid concentration of  0 . 1  to  5 % .   
     
     
       133. A copper- based metal polishing composition, comprising aminosulfuric acid, an oxidizer, water and abrasive grains.   
     
     
       134. A method for manufacturing a semiconductor device, comprising the steps of: 
       
         forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       
       
         forming an interconnection material film consisting of copper or copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening; and  
       
       
         polishing said interconnection material film by using a polishing composition comprising aminosulfuric acid, an oxidizer, water and abrasive grains, thereby forming an interconnection layer in said insulating film. 
       
     
     
       135. A method for manufacturing a semiconductor device, comprising the steps of: 
       
         forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       
       
         forming an interconnection material film consisting of copper or copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening;  
       
       
         polishing said interconnection material film by using a polishing composition comprising aminosulfuric acid, an oxidizer, water and abrasive grains, thereby forming an interconnection layer in said insulating film; and  
       
       
         treating the surface of said insulating film including said interconnection layer with an aqueous dissolved ozone solution and then with an aqueous dilute hydrofluoric acid solution. 
       
     
     
       136. A copper- based metal polishing composition, comprising an acid capable of reaction with copper to form a complex compound, an oxidizer and water.   
     
     
       137. The polishing composition according to  claim 136 , wherein said acid is aminoacetic acid. 
     
     
       138. The polishing composition according to  claim 136 , wherein said acid is an organic acid. 
     
     
       139. The polishing composition according to  claim 136 , further comprising abrasive grains. 
     
     
       140. A method for manufacturing a semiconductor device, comprising the steps of: 
       
         forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       
       
         forming an interconnection material film consisting of copper or copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening; and  
       
       
         polishing said interconnection material film by using a polishing composition comprising an acid capable of reaction with copper to form a complex compound, an oxidizer and water, thereby forming an interconnection layer in said insulating film. 
       
     
     
       141. The method according to  claim 140 , wherein said insulating film is a silicon oxide film. 
     
     
       142. The method according to  claim 140 , wherein a barrier layer is formed on said insulating film including said at least one member selected from the group consisting of a trench and an opening prior to forming said interconnection material film. 
     
     
       143. The method according to  claim 142 , wherein said barrier layer is made of at least one material selected from the group consisting of TiN, Ti, Nb, W, and a CuTa alloy. 
     
     
       144. The method according to  claim 140 , wherein said acid is aminoacetic acid. 
     
     
       145. The method according to  claim 140 , wherein said acid is an organic acid. 
     
     
       146. The method according to  claim 140 , wherein said polishing composition further comprises abrasive grains. 
     
     
       147. A method for manufacturing a semiconductor device, comprising the steps of: 
       
         forming at least one member selected from the group consisting of a trench and an opening corresponding to a shape of an interconnecting layer in an insulating film on a semiconductor substrate;  
       
       
         forming an interconnection material film consisting of copper or copper alloy on said insulating film including said at least one member selected from the group consisting of a trench and an opening;  
       
       
         polishing said interconnection material film by using a polishing composition comprising an acid capable of reaction with copper to form a complex compound, an oxidizer and water, thereby forming an interconnection layer in said insulating film; and  
       
       
         treating the surface of said insulating film including said interconnection layer with an aqueous dissolved ozone solution and then with an aqueous dilute hydrofluoric acid solution. 
       
     
     
       148. The method according to  claim 147 , wherein said insulating film is a silicon oxide film. 
     
     
       149. The method according to  claim 147 , wherein a barrier layer is formed on said insulating film including said at least one member selected from the group consisting of a trench and an opening prior to forming said interconnection material film. 
     
     
       150. The method according to  claim 149 , wherein said barrier layer is made of at least one material selected from the group consisting of TiN,Tl,Nb,W, and a CuTa alloy. 
     
     
       151. The method according to  claim 147 , wherein said acid is aminoacetic acid. 
     
     
       152. The method according to  claim 147 , wherein said acid is an organic acid. 
     
     
       153. The method according to  claim 147 , wherein said polishing composition further comprises abrasive grains. 
     
     
       154. A method for manufacturing a semiconductor device which formed multilayer interconnection structure, comprising the steps of: 
       
         forming a first opening corresponding to a shape of a first via fill in a first insulating film on a semiconductor substrate;  
       
       
         forming a first interconnection material film consisting of copper or a copper alloy on said first insulating film including said first opening;  
       
       
         polishing said first interconnection material film by using a first polishing composition comprising a first acid capable of reaction with copper to form a complex compound, an oxidizer and water, thereby forming said first via fill in said first opening;  
       
       
         forming a second insulating film on said first insulating film including said first via fill;  
       
       
         forming a second opening corresponding to a shape of a second via fill reached to said first via fill in said second insulating film;  
       
       
         forming a second interconnection material film consisting of copper or a copper alloy on said second insulating film including said second opening; and  
       
       
         polishing said second interconnection material film by using a second polishing composition, comprising a second acid capable of reaction with copper to form a complex compound, an oxidizer and water, thereby forming a second via fill in said second opening. 
       
     
     
       155. The method according to  claim 154 , wherein said first acid is an organic acid. 
     
     
       156. The method according to  claim 154 , wherein said second acid is an organic acid. 
     
     
       157. The method according to  claim 154 , wherein said first acid and said second acid are each an organic acid. 
     
     
       158. The method according to  claim 154 , wherein said first polishing composition further comprises abrasive grains. 
     
     
       159. The method according to  claim 154 , wherein said second polishing composition further comprises abrasive grains. 
     
     
       160. The method according to  claim 154 , wherein said first polishing composition and said second polishing composition each further comprises abrasive grains. 
     
     
       161. The method according to  claim 154 , wherein a barrier layer is formed on said first opening's lateral face and a surface located on said first opening's base after forming said first opening and prior to forming said first interconnection material film. 
     
     
       162. The method according to  claim 161 , wherein said first barrier layer is made of at least one material selected from the group consisting of TiN, Ti, Nb, W, and a CuTa alloy. 
     
     
       163. The method according to  claim 161 , further comprising polishing said barrier layer except inside of said first opening after polishing said first interconnection material film. 
     
     
       164. A method for manufacturing a semiconductor device which formed multilayer interconnection structure, comprising the steps of: 
       
         forming a first opening corresponding to a shape of a first via fill in a first insulating film on a semiconductor substrate;  
       
       
         forming a first interconnection material film consisting of copper or a copper alloy on said first insulating film including said first opening;  
       
       
         polishing said first interconnection material film by using a first polishing composition comprising a first acid capable of reaction with copper to form a complex compound, an oxidizer and water, thereby forming said first via fill in said opening;  
       
       
         forming a second insulating film on said first insulating film including said first via fill;  
       
       
         forming a trench corresponding to a shape of a wiring layer in said second insulating film;  
       
       
         forming a second opening reached to said first via fill at said second openings base in said second insulating film;  
       
       
         forming a second interconnection material film consisting of copper or a copper alloy on said second insulating film including said trench and said second opening; and  
       
       
         polishing said second interconnection material film by using a second polishing composition comprising a second acid capable of reaction with copper to form a complex compound, an oxidizer and water, thereby forming said interconnection layer and said second via fill in said trench and said second opening. 
       
     
     
       165. The method according to  claim 164 , wherein said first acid is an organic acid. 
     
     
       166. The method according to  claim 164 , wherein said second acid is an organic acid. 
     
     
       167. The method according to  claim 164 , wherein said first acid and said second acid are each an organic acid. 
     
     
       168. The method according to  claim 164 , wherein said first polishing composition further comprises abrasive grains. 
     
     
       169. The method according to  claim 164 , wherein said second polishing composition further comprises abrasive grains. 
     
     
       170. The method according to  claim 164 , wherein said first polishing composition and said second polishing composition each further comprises abrasive grains. 
     
     
       171. The method according to  claim 164 , wherein a diffusion layer is formed on said semiconductor substrate, and said first via fill is connected to said diffusion layer. 
     
     
       172. The method according to  claim 164 , wherein a barrier layer is formed on said first opening's lateral face and a surface located on said first opening's base after forming said first opening and prior to forming said first interconnection material film. 
     
     
       173. The method according to  claim 172 , wherein said barrier layer is made of at least one material selected from the group consisting of TiN, Ti NB, W, and a CuTa alloy. 
     
     
       174. The method according to  claim 172 , further comprising polishing said barrier layer except inside of said first opening after polishing said first interconnection material film. 
     
     
       175. The method according to  claim 154 , wherein a diffusion layer is formed on said semiconductor substrate and said first via fill is connected to said diffusion layer. 
     
     
       176. A copper- based metal polishing composition for polishing copper or a copper alloy by using a polishing apparatus having a polishing pad, comprising an acid capable of reaction with copper to form a complex compound, an oxidizer and water.   
     
     
       177. A semi- conductor device prepared by the method of    claim 164   .