USRE37819EExpiredUtility

Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN

Assignee: ALPS ELECTRIC CO LTDPriority: Sep 19, 1995Filed: Jan 18, 2000Granted: Aug 13, 2002

Est. expirySep 19, 2015(expired)· nominal 20-yr term from priority

Inventors:Masamichi Saito Toshinori Watanabe Toshihiro Kuriyama

G11B 5/3903B82Y 25/00G11B 5/3116G11B 2005/3996G11B 5/3163B82Y 10/00G11B 5/3932Y10T29/49044G11B 5/3906

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Claims

Abstract

The present invention provides a magnetoresistive head wherein: a magnetoresistive film is created in a read-track region at the center of the magnetoresistive head; an antiferromagnetic film and a ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with the antiferromagnetic film are created on each end of the magnetoresistive film outside the read-track region in such a way that the ferromagnetic film is located beside the magnetoresistive film; a nonmagnetic intermediate film is created between the magnetoresistive film and the ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between the magnetoresistive film and the ferromagnetic film and for making crystal orientations of the antiferromagnetic film and the ferromagnetic film uniform; and bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film.

Claims

exact text as granted — not AI-modified

What is claimed is:

1. A method of manufacturing a magnetoresistive head, comprising:
forming an antiferromagnetic layer comprising a PtMn alloy in direct contact with a ferromagnetic layer exhibiting a magnetoresistive effect;
heating said antiferromagnetic layer and said ferromagnetic layer to a temperature in the range of 200° to 350° C.; and
maintaining said temperature of said antiferromagnetic layer and said ferromagnetic layer within the temperature range for a period of time in the range 4 to 20 hours;
wherein said steps of heating and maintaining said temperature creates an interdiffusion layer on a boundary surface between said ferromagnetic layer and said antiferromagnetic layer.

2. A method of manufacturing a magnetoresistive head as defined in claim 1 , wherein said heating and said maintaining steps are carried out in vacuum in a one-directional magnetic field.

3. A method of manufacturing a spin-valve type magnetoresistive head having a free magnetic layer, a non-magnetic intermediate layer and a pinned magnetic layer in a laminated structure, said method comprising the steps of:
placing the surface of the pinned magnetic layer which is opposite to the non-magnetic intermediate layer into direct contact with an antiferromagnetic layer of a PtMn alloy; and
applying a heat-treatment process to the entire structure at a temperature of 200° to 350° C. for 4 to 20 hours;
thereby forming an interdiffusion layer on the boundary surface between said pinned magnetic layer and said antiferromagnetic layer in direct contact with each other.

4. A method of manufacturing a spin-valve type magnetoresistive head as defined in claim 3 , wherein said heat-treatment process is carried out in vacuum in a one-directional magnetic field.

5. A method of manufacturing a spin-valve type magnetoresistive head having a free magnetic layer, a non-magnetic intermediate layer and a pinned magnetic layer in a laminated structure, said method comprising the steps of:
placing the surface of said free magnetic layer which is opposite to said non-magnetic intermediate layer into direct contact with an antiferromagnetic layer of a PtMn alloy; and
applying a heat-treatment process to the entire structure at a temperature of 200° to 350° C. for 4 to 20 hours;
thereby forming an interdiffusion layer to the boundary surface between said free magnetic layer and said antiferromagnetic layer in direct contact with each other.

6. A method of manufacturing a spin-valve type magnetoresistive head as defined in claim 5 , wherein the heat-treatment process is carried out in vacuum in a one-directional magnetic field.

7. A method of manufacturing a spin-valve type magnetoresistive head having a free magnetic layer, a non-magnetic intermediate layer and a pinned magnetic layer in a laminate structure, said method comprising the steps of:
placing the surface of said free magnetic layer which is opposite to said non-magnetic intermediate layer into direct contact with a first antiferromagnetic layer of a PtMn alloy;
placing the surface of said pinned magnetic layer which is opposite to said non-magnetic intermediate layer in direct contact with a second antiferromagnetic layer of a PtMn alloy; and
applying a heat-treatment process to said free magnetic layer, said pinned magnetic layer and said first and said second antiferromagnetic layers at a temperature of 200° to 350° C. for 4 to 20 hours;
thereby forming an interdiffusion layer on the boundary surface between said free magnetic layer and the said first antiferromagnetic layer in direct contact with each other, and on the boundary surface between said pinned magnetic layer and said second antiferromagnetic layer in direct contact with each other.

8. A method of manufacturing a spin-valve type magnetoresistive head as defined in claim 7 , wherein the heat-treatment process is carried out in a vacuum in a one-directional magnetic field.

9. A method of manufacturing a magnetoresistive head comprising the steps of:

forming a ferromagnetic layer,

forming an antiferromagnetic layer comprising an X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, said antiferromagnetic layer being formed adjacent said ferromagnetic layer; and

forming an interdiffusion layer between said ferromagnetic layer and said antiferromagnetic layer.

10. A method according to claim 9 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer that includes an X element.

11. A method according to claim 9 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer that includes Mn.

12. A method according to claim 9 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer having a film thickness in the range of about 20 to 100 Å.

13. A method according to claim 9 , wherein said step of forming an antiferromagnetic layer comprises forming said antiferromagnetic layer such that said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

14. A method according to claim 9 , wherein said step of forming said ferromagnetic layer comprises forming said ferromagnetic layer such that said ferromagnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

15. A method according to claim 9 , wherein said step of forming an antiferromagnetic layer comprises forming said antiferromagnetic layer having a film thickness in the range of about 100 to 500 Å and wherein said step of forming said ferromagnetic layer comprises forming said ferromagnetic layer having a film thickness in the range of about 50 to 300 Å.

16. A method according to claim 9 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

17. A method according to claim 9 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

18. A method of manufacturing a magnetoresistive head comprising the steps of:

forming a free magnetic layer;

forming a nonmagnetic layer;

forming a pinned magnetic layer such that said nonmagnetic layer is interposed between said free magnetic layer and said pinned magnetic layer;

forming a longitudinal bias layer that orients the magnetization direction of said free magnetic layer substantially along a first direction;

forming an antiferromagnetic layer comprised of an X—Mn alloy where X comprises of an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, said antiferromagnetic layer formed in direct contact with said pinned magnetic layer;

wherein said step of forming said pinned magnetic layer comprises interposing said pinned magnetic layer between said antiferromagnetic layer and said free magnetic layer, said antiferromagnetic layer fixing the magnetization direction of said pinned magnetic layer along a direction crossing the magnetization direction of said free magnetic layer; and

forming an interdiffusion layer between said antiferromagnetic layer and said pinned magnetic layer.

19. A method according to claim 18 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer having a film thickness in the range of about 20 to 100 Å.

20. A method according to claim 18 , wherein said step of forming an antiferromagnetic layer comprises forming said antiferromagnetic layer such that said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

21. A method according to claim 20 , wherein said step of forming said pinned magnetic layer comprises forming said pinned magnetic layer such that said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

22. A method according to claim 20 , wherein said step of forming an antiferromagnetic layer comprises forming said antiferromagnetic layer having a film thickness in the range of about 100 to 500 Å and wherein said step of forming said pinned magnetic layer comprises forming said pinned magnetic layer having a film thickness in the range of about 50 to 300 Å.

23. A method according to claim 18 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer that includes an X element.

24. A method according to claim 18 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer that includes Mn.

25. A method according to claim 16 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

26. A method according to claim 16 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

27. A method of manufacturing a magnetoresistive head comprising the steps of:
forming, on a read - track region of said magnetoresistive head, a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure having opposing ends;

on each of said opposing ends, forming a plurality of alternately stacked layers of antiferromagnetic films with at least one ferromagnetic film layer therebetween and generating exchange coupling on upper and lower surfaces thereof in conjunction with said antiferromagnetic films; and

said alternately stacked layers applying bias magnetization to said magnetoresistive effect structure.

28. A method according to claim 27 , wherein said antiferromagnetic film is formed such that it comprises an X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

29. A method according to claim 27 , wherein said step of forming said plurality of alternatively stacked layers comprises forming said ferromagnetic film such that said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

30. A method according to claim 27 , further comprising forming an interdiffusion layer between said magnetoresistive effect structure and said bias magnetization structure.

31. A method according to claim 27 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film; wherein said interdiffusion layer is formed such that it includes an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

32. A method according to claim 27 , further comprising forming an interdiffusion layer between said ferromagnetic film and an antiferromagnetic film, wherein said interdiffusion layer is formed such that it includes Mn.

33. A method according to claim 27 , further comprising forming an interdiffusion layer between said ferromagnetic film and an antiferromagnetic film, wherein said interdiffusion layer is formed with a film thickness in the range of about 20 to 100 Å.

34. A method according to claim 23 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

35. A method according to claim 27 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

36. A method of manufacturing a magnetoresistive head comprising the steps of:

forming, on a read-track region of said magnetoresistive head, a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure having opposing ends;

stacking an antiferromagnetic film and a ferromagnetic film to form a plurality of layers with at least one ferromagnetic film interposed between antiferromagnetic films, wherein said antiferromagnetic film comprises an X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd;

forming a bias magnetization structure including a first part disposed on one of said opposing ends of said magnetoresistive effect structure and a second part disposed at the other one of said opposing ends of said magnetoresistive effect structure, said first and second parts including said stacked antiferromagnetic film and ferromagnetic film; and

wherein bias magnetization is applied to said magnetoresistive effect structure by said magnetization structure.

37. A method according to claim 36 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

38. A method according to claim 36 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

39. A method according to claim 36 , further comprising forming an interdiffusion layer between said magnetoresistive effect structure and said bias magnetization structure.

40. A method according to claim 36 , wherein said step of forming said bias magnetization structure includes alternately stacking a plurality of ferromagnetic films and antiferrogmagnetic films wherein interdiffusion layers are formed between the surfaces of said ferromagnetic films and said antiferromagnetic films.

41. A method according to claim 36 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film wherein said interdiffusion layer includes an X element.

42. A method according to claim 36 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film, wherein said interdiffusion layer is formed such it that includes Mn.

43. A method according to claim 36 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film, wherein said interdiffusion layer is formed having a film thickness in the range of about 20 to 100 Å.

44. A method according to claim 36 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

45. A method according to claim 36 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

46. A method according to claim 36 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

47. A method of manufacturing a magnetoresistive head comprising the step of:

forming a free magnetic layer;

forming a nonmagnetic layer;

forming a pinned magnetic layer such that said nonmagnetic layer is interposed between said free magnetic layer and said pinned magnetic layer;

forming a longitudinal bias layer that orients the magnetization direction of said free magnetic layer substantially along a first direction, said longitudinal bias layer disposed adjacent said free magnetic layer, wherein said longitudinal bias layer comprises an antiferromagnetic X—Mn alloy were X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd;

forming an antiferromagnetic layer;

forming interdiffusion layer between said free magnetic layer and said longitudinal bias layer.

48. A method according to claim 47 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer that includes Mn.

49. A method according to claim 47 , wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer having a film thickness in the range of about 20 to 100 Å.

50. A method according to claim 47 , wherein said step of forming an longitudinal bias layer comprises forming said longitudinal bias layer such that said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

51. A method according to claim 50 , wherein said step of forming said free magnetic layer comprises forming said free magnetic layer such that said free magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

52. A method according to claim 50 , wherein said step of forming an longitudinal bias layer comprises forming said longitudinal bias layer having a film thickness in the range of about 100 to 500 Å and wherein said step of forming said free magnetic layer comprises forming said free magnetic layer having a film thickness in the range of about 50 to 300 Å.

53. A method according to claim 47 wherein said step of forming an interdiffusion layer comprises forming an interdiffusion layer that includes an X element.

54. A method according to claim 47 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

55. A method according to claim 47 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

56. A method of manufacturing a magnetoresistive head comprising the steps of:
forming, on a read - track region of said magnetoresistive head, a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure having opposing ends;

stacking an antiferromagnetic film and a ferromagnetic film to form a plurality of layers;

forming an interdiffusion layer between said magnetoresistive effect structure and a bias magnetization structure;

forming said bias magnetization structure including a first part disposed on one of said opposing ends of said magnetoresistive effect structure and a second part disposed at the other one of said opposing ends of said magnetoresistive effect structure, said first and second parts including said stacked antiferromagnetic film an ferromagnetic film; and

wherein bias magnetization is applied to said magnetoresistive effect structure by said magnetization structure.

57. A method according to claim 56 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film, wherein said interdiffusion layer is formed having a film thickness in the range of about 20 to 100 Å.

58. A method according to claim 56 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

59. A method according to claim 56 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy of Co.

60. A method according to claim 56 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

61. A method according to claim 56 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

62. A method according to claim 56 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

63. A method according to claim 56 , wherein said step of forming said bias magnetization structure includes alternately stacking a plurality of ferromagnetic films and antiferromagnetic films wherein interdiffusion layers are formed between the surfaces of said ferromagnetic films and said antiferromagnetic films.

64. A method according to claim 56 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film wherein said interdiffusion layer includes an X element.

65. A method according to claim 56 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film wherein said interdiffusion layer includes Mn.

66. A method of manufacturing a magnetoresistive head comprising the steps of:
forming, on a read- track region of said magnetoresistive head, a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure having opposing ends;
stacking an antiferromagnetic film and a ferromagnetic film to form a plurality of layers with at least one ferromagnetic film interposed between antiferromagnetic films wherein said antiferromagnetic film comprises an X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd and wherein said X—Mn alloy comprises about 5 to 54 % of X and about 95 to 46 % of Mn;

wherein bias magnetization is applied to said magnetoresistive effect structure by said magnetization structure.

67. A method according to claim 66 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film wherein said interdiffusion layer includes Mn.

68. A method according to claim 66 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film, wherein said interdiffusion layer is formed having a film thickness in the range of about 20 to 100 Å.

69. A method according to claim 66 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy or Co.

70. A method according to claim 66 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

71. A method according to claim 66 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

72. A method according to claim 66 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

73. A method according to claim 66 , further comprising forming an interdiffusion layer between said magnetoresistive effect structure and said bias magnetization structure.

74. A method according to claim 66 , wherein said step of forming said bias magnetization structure includes alternately stacking a plurality of ferromagnetic films and antiferromagnetic films wherein interdiffusion layers are formed between the surfaces of said ferromagnetic films and said antiferromagnetic films.

75. A method according to claim 66 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film wherein said interdiffusion layer includes an X element.

76. A method of manufacturing a magnetoresistive head comprising the steps of:
forming on a read - track region of said magnetoresistive head, a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure having opposing ends;

on each of said opposing ends, forming a plurality of alternately stacked layers of ferromagnetic films with at least one antiferromagnetic film there between and generating exchange coupling on upper and lower surfaces thereof in conjunction with said ferromagnetic films; and

said alternately stacked layers applying bias magnetization to said magnetoresistive effect structure.

77. A method according to claim 76 , further comprising forming an interdiffusion layer between said magnetoresistive effect structure and said bias magnetization structure.

78. A method according to claim 76 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film; wherein said interdiffusion layer is formed such that it includes an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

79. A method according to claim 76 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film, wherein said interdiffusion layer is formed such that it includes Mn.

80. A method according to claim 76 , further comprising forming an interdiffusion layer between said ferromagnetic film and antiferromagnetic film, wherein said interdiffusion layer is formed with a film thickness in the range of about 20 to 100 Å.

81. A method according to claim 76 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 85 at % of Mn.

82. A method according to claim 76 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

83. A method according to claim 76 , wherein said antiferromagnetic film is formed such that it comprises an X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

84. A method according to claim 83 , wherein said step of forming said plurality of alternately stacked layers comprises forming said ferromagnetic film such that said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy, and Co.

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