Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus
Abstract
In a solution for forming electron-emitting regions of electron-emitting devices, the solution contains a metal carboxylate expressed by the following general formula (I), an organic solvent <DEL-S DATE="20021029" ID="DEL-S-00001"/>and/or<DEL-E ID="DEL-S-00001"/> <INS-S DATE="20021029" ID="INS-S-00001"/>, and <INS-E ID="INS-S-00001"/>water;where k=<DEL-S DATE="20021029" ID="DEL-S-00002"/>numeral from<DEL-E ID="DEL-S-00002"/> 1 <DEL-S DATE="20021029" ID="DEL-S-00003"/>to 4<DEL-E ID="DEL-S-00003"/> , m=<INS-S DATE="20021029" ID="INS-S-00002"/>a <INS-E ID="INS-S-00002"/>numeral from 1 to 4, and <DEL-S DATE="20021029" ID="DEL-S-00004"/>R=CnX2n+1-k<DEL-E ID="DEL-S-00004"/> <INS-S DATE="20021029" ID="INS-S-00003"/>R=CnX2n+2-k <INS-E ID="INS-S-00003"/>where X=<INS-S DATE="20021029" ID="INS-S-00004"/>a <INS-E ID="INS-S-00004"/>hydrogen or halogen <DEL-S DATE="20021029" ID="DEL-S-00005"/>(total number of hydrogen and halogen atoms is 2n+1)<DEL-E ID="DEL-S-00005"/> , n=<INS-S DATE="20021029" ID="INS-S-00005"/>an <INS-E ID="INS-S-00005"/>integer from 0 to 30, and M=<INS-S DATE="20021029" ID="INS-S-00006"/>a <INS-E ID="INS-S-00006"/>metal<INS-S DATE="20021029" ID="INS-S-00007"/>, wherein the organic solvent is a carboxylic ester having the same carboxylic group as R(COO)k expressed in the general formula (I)<INS-E ID="INS-S-00007"/>. In a manufacture method of electron-emitting devices each provided between electrodes with a conductive film including an electron-emitting region, a process of forming the conductive film includes a step of coating and calcining the above solution. An image-forming apparatus is manufactured by using the electron-emitting devices. Variations in sheet resistance values of electron-emitting region-forming thin films and characteristics of the electron-emitting devices are reduced.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A solution (for fabrication of electron-emitting devices) and for forming electron-emitting regions of electron-emitting devices, wherein said solution contains a metal carboxylate expressed by the following formula (I), and a carboxylic ester;
(R(COO) k ) m M (I)
where k=numeral from 1 to 4, m=numeral from 1 to 4, and
R=C n X 2n+1−k where X=hydrogen or halogen (total number of hydrogen and halogen atoms is 2n+1),
n=integer from 0 to 30, and M=metal.
2. A solution according to claim 1 , wherein said carboxylic ester has the same carboxylic group as R(COO) k expressed in said general formula (I).
3. A solution according to claim 1 , wherein said carboxylic ester has a carboxylic group different in R from R(COO) k expressed in said general formula (I).
4. A solution according to claim 1 , wherein the content of said metal carboxylate expressed by said general formula (I) is in the range of 0.1 wt % to 10 wt %.
5. A solution according to any of claims 1 , 2 , 3 and 4 further containing a carboxylic acid.
6. A solution according to claim 5 , wherein said carboxylic acid has the same carboxylic group as R(COO) k expressed in said general formula (I).
7. A solution according to claim 6 , wherein said carboxylic acid has the carboxylic group in 1 to 1/100 equivalent with respect to said metal carboxylate expressed in said general formula (I).
8. A solution according to claim 5 , wherein said carboxylic acid has a carboxylic group different in R from R(COO) k expressed in said general formula (I).
9. A solution according to claim 8 , wherein said carboxylic acid has the carboxylic group in 1 to 1/100 equivalent with respect to said metal carboxylate expressed in said general formula (I).
10. A manufacture method of electron-emitting devices each provided between electrodes with a conductive film including an electron-emitting region, said electron- emitting devices being capable of emitting electrons from the electron - emitting region to the outside thereof, wherein the method comprises:
( a ) a process of forming creating the conductive film in which the electron-emitting region is to be formed that includes a step of coating and calcining a solution which contains 0 . 1 wt % to 10 wt % of a metal carboxylate expressed by the following general formula (I), an organic solvent and/or, and water;
(R(COO) k ) m M (I)
where k=numeral from 1 to 4 , m=a numeral from 1 to 4, and R=C n X 2n+1−k X 2n+2−k where X=a hydrogen or halogen (total number of hydrogen and halogen atoms is 2n+1) , n=an integer from 0 to 30, and M=a metal, wherein said organic solvent is a carboxylic ester having the same carboxylic group as R( COO ) k expressed in the general formula ( I ) , at least 90 % of the metal carboxylate being decomposed during the calcining step; and
( b ) a process of forming the electron - emitting region in said created conductive film .
11. A manufacture method of electron-emitting devices according to claim 10 , wherein said organic solvent is carboxylic ester.
12. A manufacture method of electron-emitting devices according to claim 11 , wherein said carboxylic ester has the same carboxylic group as R(COO) k expressed in said general formula (I).
13. A manufacture method of electron-emitting devices according to claim 11 , wherein said carboxylic ester has a carboxylic group different in R from R(COO) k expressed in said general formula (I).
14. A manufacture method of electron-emitting devices according to claim 10 , wherein said organic solvent is hydrocarbon halide.
15. A manufacture method of electron-emitting devices according to claim 10 , wherein the content of said metal carboxylate expressed by said general formula (I) is in the range of 0.1 wt % to 10 wt %.
16. A manufacture method of electron-emitting devices according to claim 10 , wherein the solution used in process ( a ) further containing contains a carboxylic acid.
17. A manufacture method of electron-emitting devices according to claim 16 , wherein said carboxylic acid has the same carboxylic group as R(COO) k expressed in said general formula (I).
18. A manufacture method of electron-emitting devices according to claim 17 , wherein said carboxylic acid has the carboxylic group in 1 to 1/100 equivalent with respect to said metal carboxylate expressed in said general formula (I).
19. A manufacture method of electron-emitting devices according to claim 16 , wherein said carboxylic acid has a carboxylic group different in R from R(COO) k expressed in said general formula (I).
20. A manufacture method of electron-emitting devices according to claim 19 , wherein said carboxylic acid has the carboxylic group in 1 to 1/100 equivalent with respect to said metal carboxylate expressed in said general formula (I).
21. A manufacture method of electron-emitting devices according to any one of claims 10 toor 16 - 20 , further including a step of applying a voltage to the conductive film formed by said film forming step wherein said process of forming the electron- emitting region includes a step of applying a voltage to the conductive film created by said film - creating process .
22. A manufacture method of an electron source comprising a plurality of electron-emitting devices, wherein said electron-emitting devices are produced by the manufacture method according to claim 10 .
23. A manufacture method of an image-forming apparatus comprising electron-emitting devices and an image-forming member, wherein said electron-emitting devices are produced by the manufacture method according to claim 10 .
24. A manufacture method of electron- emitting devices each provided between electrodes with a conductive film including an electron - emitting region, said electron - emitting devices being capable of emitting electrons from the electron - emitting region to the outside thereof, wherein the method comprises:
( a ) a process of creating the conductive film in which the electron - emitting region is to be formed that includes a step of coating and calcining a solution which contains 0 . 1 wt % to 10 wt % of a metal carboxylate expressed by the following general formula ( I ) , an organic solvent, and water:
( R ( COO ) k ) m M ( I )
where k= 2 , 3 , or 4 , m=a numeral from 1 to 4 , and R=C n X 2n+2−k or C 6 H 4 where X=hydrogen or halogen, n=an integer from 0 to 30 , and M=a metal, provided that when n= 0 , k= 2 , and when R=C 6 H 4 , k= 2 , and wherein said organic solvent is a carboxylic ester having the same carboxylic group as R ( COO ) k expressed in the general formula ( I ) , at least 90 % of the metal carboxylate being decomposed during the calcining step; and
( b ) a process of forming the electron - emitting region, in said created conductive film.Cited by (0)
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