USRE37992EExpiredUtilityPatentIndex 63

Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer

Assignee: ALPS ELECTRIC CO LTDPriority: Sep 19, 1995Filed: Apr 7, 1999Granted: Feb 18, 2003

Est. expirySep 19, 2015(expired)· nominal 20-yr term from priority

Inventors:SAITO MASAMICHI WATANABE TOSHINORI KURIYAMA TOSHIHIRO

G11B 5/3903B82Y 25/00G11B 5/3116G11B 5/3163Y10T29/49044G11B 2005/3996G11B 5/3906B82Y 10/00G11B 5/3932

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References

358

Claims

Abstract

A magnetoresistive head including a magnetoresistive film formed in a read-track region, and antiferromagnetic and ferromagnetic films are formed on each end of the magnetoresistive film outside of the read-track region such that bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film. A nonmagnetic intermediate film is formed between the ferromagnetic film and the magnetoresistive film for preventing ferromagnetic coupling on a contact boundary surface between the ferromagnetic film and the magnetoresistive film. In accordance with another aspect, a magnetoresistive head includes an antiferromagnetic layer formed from an X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Tr, and Pd. An interdiffusion layer is formed between the antiferromagnetic film and a ferromagnetic layer or a pinned magnetic layer by heat treatment.

Claims

exact text as granted — not AI-modified

What is claimed is:

1. A magnetoresistive head comprising:
a magnetoresistive film and a soft magnetic film formed in a read-track region of said magnetoresistive head with a nonmagnetic layer formed therebetween, said magnetoresistive film having opposing ends;
a ferromagnetic film; and
an antiferromagnetic film formed on said magnetoresistive film, said ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with said antiferromagnetic film;
wherein said antiferromagnetic film and said ferromagnetic film have portions located on the opposing ends of said magnetoresistive film outside the read-track region;
wherein said portions of said antiferromagnetic film directly contact said portions of said magnetoresistive film;
wherein said antiferromagnetic film is located between said soft magnetic film and said ferromagnetic film; and
wherein bias magnetization is applied to said magnetoresistive film by exchange coupling between said antiferromagnetic film and said ferromagnetic film.

2. A magnetoresistive head according to claim 1 , wherein said antiferromagnetic film comprises a PtMn alloy.

3. A magnetoresistive head comprising:
a magnetoresistive film located in a ready-track region of said magnetoresistive head, said magnetoresistive film having opposing ends;
a ferromagnetic film; and
an antiferromagnetic film formed on said ferromagnetic film, said ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with said antiferromagnetic film;
wherein said antiferromagnetic film and said ferromagnetic film are located on the opposing ends of said magnetoresistive film outside the read-track region such that a portion of said ferromagnetic film is located between said magnetoresistive film and said antiferromagnetic film;
wherein a nonmagnetic intermediate film is located between said magnetoresistive film and said ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between said magnetoresistive film and said ferromagnetic film and for making crystal orientations of said antiferromagnetic film and said ferromagnetic film uniform; and
wherein bias magnetization is applied to said magnetoresistive film by exchange coupling between said antiferromagnetic film and said ferromagnetic film.

4. A magnetoresistive head according to claim 3 , wherein said nonmagnetic intermediate layer comprises one of tantalum, zirconium, titanium, chromium and hafnium.

5. A magnetoresistive head according to claim 4 , wherein said antiferromagnetic film comprises a PtMn alloy.

6. A magnetoresistive head comprising:
a magnetoresistive film located in a read-track region of said magnetoresistive head, said magnetoresistive film having opposing ends;
an antiferromagnetic film; and
a ferromagnetic film formed on said antiferromagnetic film, said ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with said antiferromagnetic film;
wherein said antiferromagnetic film and said ferromagnetic film are located on the opposing ends of said magnetoresistive film outside the read-track region such that a portion of said antiferromagnetic film is located between said magnetoresistive film and said ferromagnetic film; and
a nonmagnetic intermediate film located between said magnetoresistive film and said antiferromagnetic film for making crystal orientations of said antiferromagnetic film and said ferromagnetic film uniform;
wherein bias magnetization is applied to said magnetoresistive film by exchange coupling between said antiferromagnetic film and said ferromagnetic film.

7. A magnetoresistive head according to claim 6 , wherein said nonmagnetic intermediate layer comprises one of tantalum, zirconium, titanium, chromium and hafnium.

8. A magnetoresistive head according to claim 7 , wherein said antiferromagnetic film comprises a PtMn alloy.

9. A magnetoresistive head comprising:
a magnetoresistive film located in a read-track region of said magnetoresistive head, said magnetoresistive film having opposing ends;
a ferromagnetic film; and
an antiferromagnetic film formed on said ferromagnetic film, said ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with said antiferromagnetic film;
wherein said antiferromagnetic film and said ferromagnetic film are located on the opposing ends of said magnetoresistive film outside the read-track region such that a portion of said ferromagnetic film is located between said magnetoresistive film and said antiferromagnetic film;
wherein a nonmagnetic intermediate film is located between said magnetoresistive film and said ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between said magnetoresistive film and said ferromagnetic film and for making crystal orientations of said antiferromagnetic film and said ferromagnetic film uniform;
wherein said antiferromagnetic film and said ferromagnetic film are stacked alternately to form a plurality of layers with at least one ferromagnetic-film layer generating exchange coupling on upper and lower surfaces thereof in conjunction with said antiferromagnetic films; and
wherein bias magnetization is applied to said magnetoresistive film by exchange coupling between each of said stacked antiferromagnetic films and each of said stacked ferromagnetic films.

10. A magnetoresistive head according to claim 9 , wherein said nonmagnetic intermediate layer comprises one of tantalum, zirconium, titanium, chromium and hafnium.

11. A magnetoresistive head according to claim 10 , wherein said antiferromagnetic film comprises a PtMn alloy.

12. A magnetoresistive head comprising:
a magnetoresistive film located in a read-track region of said magnetoresistive head, said magnetoresistive film having opposing ends;
an antiferromagnetic film; and
a ferromagnetic film formed on said antiferromagnetic film, said ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with said antiferromagnetic film;
wherein said antiferromagnetic film and said ferromagnetic film are located on the opposing ends of said magnetoresistive film outside the read-track region such that a portion of said antiferromagnetic film is located between said magnetoresistive film and said ferromagnetic film; and
a nonmagnetic intermediate film is located between said magnetoresistive film and said antiferromagnetic film for making crystal orientations of said antiferromagnetic film and said ferromagnetic film uniform;
wherein said antiferromagnetic film and said ferromagnetic film are stacked alternately to form a plurality of layers with at least one ferromagnetic-film layer generating exchange coupling on upper and lower surfaces thereof in conjunction with said antiferromagnetic films; and
wherein bias magnetization is applied to said magnetoresistive film by exchange coupling between each of said stacked antiferromagnetic films and each of said stacked ferromagnetic films.

13. A magnetoresistive head according to claim 12 , wherein said nonmagnetic intermediate layer comprises one of tantalum, zirconium, titanium, chromium and hafnium.

14. A magnetoresistive head according to claim 13 , wherein said antiferromagnetic film comprises a PtMn alloy.

15. A magnetoresistive head comprising:
a magnetoresistive film and a soft magnetic film formed in a read-track region of said magnetoresistive head with a nonmagnetic layer formed therebetween, said magnetoresistive film having opposing ends;
a ferromagnetic film; and
an antiferromagnetic film formed on said magnetoresistive film, said ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with said antiferromagnetic film;
wherein said antiferromagnetic film and said ferromagnetic film include portions located on the opposing ends of said magnetoresistive film outside the read-track region;
wherein said portions of said antiferromagnetic film directly contact said magnetoresistive film;
wherein said antiferromagnetic film is located between said soft magnetic film and said ferromgnetic film; and
wherein said antiferromagnetic film and said ferromagnetic film are stacked alternately to form a plurality of layers with at least one ferromagnetic-film layer generating exchange coupling on upper and lower surfaces thereof in conjunction with said antiferromagnetic films; and
wherein bias magnetization is applied to said magnetoresistive film by exchange coupling between each of said stacked antiferromagnetic films and each of said stacked ferromagnetic films.

16. A magnetoresistive head according to claim 15 , wherein said antiferromagnetic film comprises a PtMn alloy.

17. A magnetoresistive head comprising:
a ferromagnetic layer exhibiting a magnetoresistive effect; and
an antiferromagnetic layer formed over said ferromagnetic layer with an interdiffusion layer formed therebetween,
wherein said antiferromagnetic layer comprises an X—Mn alloy where X is selected from the group consisting of Pt, Rh, Ru, Ir and Pd, and
wherein an exchange anisotropic magnetic field is generated in said interdiffusion layer formed between said antiferromagnetic layer and said antiferromagnetic layer.

18. A magnetoresistive head according to claim 17 , wherein said X—Mn alloy comprises X in the range 5 to 54 at % and Mn in the range 95 to 46 at %.

19. A magnetoresistive head according to claim 18 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

20. A magnetoresistive head according to claim 17 , wherein said X—Mn alloy comprises X in the range 5 to 20 at % and Mn in the range 95 to 80 at %.

21. A magnetoresistive head according to claim 20 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

22. A magnetoresistive head according to claim 17 , wherein said X—Mn alloy comprises X in the range 36 to 54 at % and Mn in the range 64 to 46 at %.

23. A magnetoresistive head according to claim 22 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range from 200° to 350° C.

24. A magnetoresistive head according to claim 22 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

25. A magnetoresistive head according to claim 24 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

26. A magnetoresistive head according to claim 24 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

27. A magnetoresistive head according to claim 24 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

28. A magnetoresistive head according to claim 22 , wherein said ferromagnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

29. A magnetoresistive head according to claim 28 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

30. A magnetoresistive head according to claim 29 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

31. A magnetoresistive head according to claim 29 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

32. A magnetoresistive head according to claim 29 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

33. A magnetoresistive head according to claim 17 , wherein said X—Mn alloy comprises 44 to 54 at % of X and 56 to 46 at % of Mn.

34. A magnetoresistive head according to claim 33 , wherein said ferromagnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

35. A magnetoresistive head according to claim 34 , wherein a film thickness of said antiferromagnetic layer in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

36. A magnetoresistive head according to claim 35 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

37. A magnetoresistive head according to claim 35 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

38. A magnetoresistive head according to claim 35 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

39. A magnetoresistive head according to claim 33 , wherein a film thickness of said antiferromagnetic layer is in the range 100 and 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

40. A magnetoresistive head according to claim 39 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

41. A magnetoresistive head according to claim 39 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

42. A magnetoresistive head according to claim 39 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

43. A magnetoresistive head according to claim 33 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range from 200° to 350° C.

44. A magnetoresistive head according to claim 17 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

45. A magnetoresistive head comprising:
a ferromagnetic layer having a magnetoresistive effect, and
an antiferromagnetic layer formed on said ferromagnetic layer,
wherein said antiferromagnetic layer comprises an X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, and where said X—Mn alloy comprises 36 to 54 at % of X and 64 to 46 at % of Mn,
wherein said antiferromagnetic layer is subjected to a heat-treatment process, and
wherein an exchange anisotropic magnetic field is generated between said antiferromagnetic layer and said ferromagnetic layer.

46. A magnetoresistive head according to claim 45 , wherein said ferromagnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

47. A magnetoresistive head according to claim 46 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

48. A magnetoresistive head according to claim 47 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

49. A magnetoresistive head according to claim 47 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

50. A magnetoresistive head according to claim 45 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

51. A magnetoresistive head according to claim 50 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

52. A magnetoresistive head according to claim 50 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

53. A magnetoresistive head comprising:
a ferromagnetic layer having a magnetoresistive effect, and
an antiferromagnetic layer formed on said ferromagnetic layer,
wherein said antiferromagnetic layer comprises an X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Tr Ir, and Pd, and where said X—Mn alloy comprises 44 to 54 at % of X and 56 to 46 at % of Mn,
wherein said antiferromagnetic layer is subjected to a heat-treatment process, and
wherein an exchange anisotropic magnetic field is generated between said antiferromagnetic layer and said ferromagnetic layer.

54. A magnetoresistive head according to claim 53 , wherein said ferromagnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

55. A magnetoresistive head according to claim 54 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range 50 to 300 Å.

56. A magnetoresistive head according to claim 55 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

57. A magnetoresistive head according to claim 55 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

58. A magnetoresistive head according to claim 53 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range of 50 to 300 Å.

59. A magnetoresistive head according to claim 58 , wherein a film thickness of said antiferromagnetic layer is in the range from 300 to 500 Å.

60. A magnetoresistive head according to claim 58 , wherein a film thickness of said ferromagnetic layer is in the range from 50 to 100 Å.

61. A magnetoresistive head comprising:
a free magnetic layer,
a pinned magnetic layer,
a nonmagnetic layer formed between said free magnetic layer and said pinned magnetic layer,
a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along the track direction, and
an antiferromagnetic layer formed over said pinned magnetic layer with an interdiffusion layer formed therebetween, said antiferromagnetic layer fixing the magnetization direction of said pinned magnetic layer along a direction crossing the magnetization direction of said free magnetic layer,
wherein said antiferromagnetic layer comprises an X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Rh, Ir, and Pd, and
wherein an exchange anisotropic magnetic field is generated in said interdiffusion layer formed between said pinned magnetic layer and said antiferromagnetic layer.

62. A magnetoresistive head according to claim 61 , wherein said X—Mn alloy comprises 5 to 54 at % of X and 95 to 46 at % of Mn.

63. A magnetoresistive head according to claim 62 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

64. A magnetoresistive head according to claim 61 , wherein said X—Mn alloy comprises 5 to 20 at % of X and 95 to 80 at % of Mn.

65. A magnetoresistive head according to claim 64 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

66. A magnetoresistive head according to claim 61 , wherein said X—Mn alloy comprises 36 to 54 at % of X and 64 to 46 at % of Mn.

67. A magnetoresistive head according to claim 66 , wherein said pinned magnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

68. A magnetoresistive head according to claim 67 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

69. A magnetoresistive head according to claim 68 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

70. A magnetoresistive head according to claim 68 , wherein a film thickness of said interdiffusion layer is in the range 20 to 100 Å.

71. A magnetoresistive head according to claim 68 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

72. A magnetoresistive head according to claim 66 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

73. A magnetoresistive head according to claim 72 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

74. A magnetoresistive head according to claim 72 , wherein a film thickness of said interdiffusion layer is in the range 20 to 100 Å.

75. A magnetoresistive head according to claim 72 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

76. A magnetoresistive head according to claim 66 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range from 200° to 350° C.

77. A magnetoresistive head according to claim 61 , wherein a film thickness of said interdiffusion layer is in the range from 20 to 100 Å.

78. A magnetoresistive head according to claim 61 , wherein said X—Mn alloy comprises 44 to 54 at % of X and 56 to 46 at % of Mn.

79. A magnetoresistive head according to claim 78 , wherein said pinned magnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

80. A magnetoresistive head according to claim 79 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

81. A magnetoresistive head according to claim 80 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

82. A magnetoresistive head according to claim 80 , wherein a film thickness of said interdiffusion layer is in the range 20 to 100 Å.

83. A magnetoresistive head according to claim 80 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

84. A magnetoresistive head according to claim 78 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range from 200° to 350° C.

85. A magnetoresistive head according to claim 78 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

86. A magnetoresistive head according to claim 85 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

87. A magnetoresistive head according to claim 85 , wherein a film thickness of said interdiffusion layer is in the range 20 to 100 Å.

88. A magnetoresistive head according to claim 85 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

89. A magnetoresistive head comprising:
a free magnetic layer,
a pinned magnetic layer,
a nonmagnetic layer formed between said free magnetic layer and said pinned magnetic layer,
a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along the track direction, and
an antiferromagnetic layer formed over said pinned magnetic layer with an interdiffusion layer formed therebetween, said antiferromagnetic layer fixing the magnetization direction of said pinned magnetic layer along a direction crossing the magnetization direction of said free magnetic layer,
wherein said antiferromagnetic layer comprises an X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, said X—Mn alloy comprises 36 to 54 at % of X and 64 to 46 at % of Mn and is subjected to a heat-treatment process to form said interdiffusion layer, and
wherein an exchange anisotropic magnetic field is generated between said pinned magnetic layer and said antiferromagnetic layer.

90. A magnetoresistive head according to claim 89 , wherein said pinned magnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

91. A magnetoresistive head according to claim 90 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

92. A magnetoresistive head according to claim 91 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

93. A magnetoresistive head according to claim 91 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

94. A magnetoresistive head according to claim 89 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

95. A magnetoresistive head according to claim 94 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

96. A magnetoresistive head according to claim 94 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

97. A magnetoresistive head comprising:
a free magnetic layer,
a pinned magnetic layer,
a nonmagnetic layer formed between said free magnetic layer and said pinned magnetic layer,
a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along the track direction, and
an antiferromagnetic layer formed over said pinned magnetic layer with an interdiffusion layer formed therebetween, said antiferromagnetic layer fixing the magnetization direction of said pinned magnetic layer along a direction crossing the magnetization direction of said free magnetic layer,
wherein said antiferromagnetic layer comprises an X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, said X—Mn alloy comprises 44 to 54 at % of X and 56 to 46 at % of Mn and is subjected to a heat-treatment process to form said interdiffusion layer, and
wherein an exchange anisotropic magnetic field is generated between said pinned magnetic layer and said antiferromagnetic layer.

98. A magnetoresistive head according to claim 97 , wherein said pinned magnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

99. A magnetoresistive head according to claim 98 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

100. A magnetoresistive head according to claim 99 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

101. A magnetoresistive head according to claim 99 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

102. A magnetoresistive head according to claim 97 , wherein a film thickness of said antiferromagnetic layer is in the range 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range 50 to 300 Å.

103. A magnetoresistive head according to claim 102 , wherein a film thickness of said antiferromagnetic layer is in the range 300 to 500 Å.

104. A magnetoresistive head according to claim 102 , wherein a film thickness of said pinned magnetic layer is in the range 50 to 100 Å.

105. A magnetoresistive head comprising:

a free magnetic layer;

a pinned magnetic layer;

a nonmagnetic layer interposed between said free magnetic layer and said pinned magnetic layer;

a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along a track direction;

an antiferromagnetic layer;

said pinned magnetic layer interposed between said antiferromagnetic layer and said free magnetic layer, said antiferromagnetic layer fixing the magnetization direction of said pinned magnetic layer along a direction crossing the magnetization direction of said free magnetic layer; and

an interdiffusion layer formed between said antiferromagnetic layer and said pinned magnetic layer;

wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

106. A magnetoresistive head according to claim 105 , wherein said interdiffusion layer includes an X element.

107. A magnetoresistive head according to claim 105 , wherein said interdiffusion layer includes Mn.

108. A magnetoresistive head according to claim 105 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

109. A magnetoresistive head according to claim 105 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

110. A magnetoresistive head according to claim 109 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

111. A magnetoresistive head according to claim 109 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

112. A magnetoresistive head according to claim 109 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

113. A magnetoresistive head according to claim 111 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

114. A magnetoresistive head according to claim 111 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

115. A magnetoresistive head according to claim 111 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

116. A magnetoresistive head according to claim 105 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

117. A magnetoresistive head according to claim 116 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

118. A magnetoresistive head according to claim 116 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

119. A magnetoresistive head according to claim 116 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

120. A magnetoresistive head according to claim 118 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

121. A magnetoresistive head according to claim 118 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

122. A magnetoresistive head according to claim 118 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

123. A magnetoresistive head according to claim 105 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

124. A magnetoresistive head according to claim 123 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

125. A magnetoresistive head according to claim 123 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

126. A magnetoresistive head according to claim 123 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

127. A magnetoresistive head according to claim 125 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

128. A magnetoresistive head according to claim 125 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

129. A magnetoresistive head according to claim 125 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

130. A magnetoresistive head according to claim 105 , wherein said X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

131. A magnetoresistive head according to claim 130 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

132. A magnetoresistive head according to claim 130 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

133. A magnetoresistive head according to claim 130 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

134. A magnetoresistive head according to claim 132 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

135. A magnetoresistive head according to claim 132 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

136. A magnetoresistive head according to claim 132 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

137. A magnetoresistive head according to claim 105 , wherein said longitudinal bias layer is disposed adjacent said free magnetic layer; and said longitudinal bias layer comprises an antiferromagnetic X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

138. A magnetoresistive head according to claim 105 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

139. A magnetoresistive head comprising:

a free magnetic layer;

a pinned magnetic layer;

a nonmagnetic layer interposed between said free magnetic layer and said pinned magnetic layer;

a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along a track direction;

an antiferromagnetic layer;

an interdiffusion layer formed between said antiferromagnetic layer and said pinned magnetic layer; said interdiffusion layer comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, and said interdiffusion layer generates an exchange anisotropic magnetic field therein.

140. A magnetoresistive head according to claim 139 , wherein said interdiffusion layer includes Mn.

141. A magnetoresistive head according to claim 139 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

142. A magnetoresistive head according to claim 139 , wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir and Pd; and said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

143. A magnetoresistive head according to claim 142 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

144. A magnetoresistive head according to claim 142 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

145. A magnetoresistive head according to claim 142 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

146. A magnetoresistive head according to claim 144 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

147. A magnetoresistive head according to claim 144 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

148. A magnetoresistive head according to claim 144 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

149. A magnetoresistive head according to claim 139 , wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir and Pd; and said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

150. A magnetoresistive head according to claim 149 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

151. A magnetoresistive head according to claim 149 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

152. A magnetoresistive head according to claim 149 , wherein said interdiffusion layer is formed by heat treatment at a temperature in range of about 200 ° C. to 350 ° C.

153. A magnetoresistive head according to claim 151 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

154. A magnetoresistive head according to claim 151 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

155. A magnetoresistive head according to claim 151 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

156. A magnetoresistive head according to claim 139 , wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir and Pd; and said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

157. A magnetoresistive head according to claim 156 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

158. A magnetoresistive head according to claim 156 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

159. A magnetoresistive head according to claim 156 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

160. A magnetoresistive head according to claim 158 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

161. A magnetoresistive head according to claim 158 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

162. A magnetoresistive head according to claim 158 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

163. A magnetoresistive head according to claim 139 , wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir and Pd; and said X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

164. A magnetoresistive head according to claim 163 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

165. A magnetoresistive head according to claim 163 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

166. A magnetoresistive head according to claim 163 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

167. A magnetoresistive head according to claim 165 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

168. A magnetoresistive head according to claim 165 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

169. A magnetoresistive head according to claim 165 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

170. A magnetoresistive head according to claim 139 , wherein said longitudinal bias layer is disposed adjacent said free magnetic layer; and said longitudinal bias layer comprises an antiferromagnetic X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

171. A magnetoresistive head according to claim 139 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

172. A magnetoresistive head according to claim 139 , wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

173. A magnetoresistive head according to claim 172 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

174. A magnetoresistive head according to claim 172 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

175. A magnetoresistive head according to claim 172 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about from 200 ° C. to 350 ° C.

176. A magnetoresistive head according to claim 174 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

177. A magnetoresistive head according to claim 174 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

178. A magnetoresistive head according to claim 174 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

179. A magnetoresistive head comprising:

a free magnetic layer;

a pinned magnetic layer;

a nonmagnetic layer interposed between said free magnetic layer and said pinned magnetic layer;

a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along a track direction;

an antiferromagnetic layer, wherein said antiferromagnetic layer comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd, and wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn;

an interdiffusion layer formed between said antiferromagnetic layer and said pinned magnetic layer.

180. A magnetoresistive head according to claim 179 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

181. A magnetoresistive head according to claim 180 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

182. A magnetoresistive head according to claim 180 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

183. A magnetoresistive head according to claim 180 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

184. A magnetoresistive head according to claim 179 , wherein said interdiffusion layer includes an X element.

185. A magnetoresistive head according to claim 179 , wherein said interdiffusion layer includes Mn.

186. A magnetoresistive head according to claim 179 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

187. A magnetoresistive head according to claim 179 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

188. A magnetoresistive head according to claim 179 , wherein said longitudinal bias layer is disposed adjacent said free magnetic layer; and said longitudinal bias layer comprises an antiferromagnetic X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

189. A magnetoresistive head according to claim 179 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

190. A magnetoresistive head comprising:

a free magnetic layer;

a pinned magnetic layer;

a nonmagnetic layer interposed between said free magnetic layer and said pinned magnetic layer;

a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along a track direction;

an interdiffusion layer formed between said antiferromagnetic layer and said pinned magnetic layer.

191. A magnetoresistive head according to claim 190 , wherein said pinned magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

192. A magnetoresistive head according to claim 190 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said pinned magnetic layer is in the range of about 50 to 300 Å.

193. A magnetoresistive head according to claim 192 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

194. A magnetoresistive head according to claim 192 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

195. A magnetoresistive head according to claim 192 , wherein a film thickness of said pinned magnetic layer is in the range of about 50 to 100 Å.

196. A magnetoresistive head according to claim 190 , wherein said interdiffusion layer includes an element X.

197. A magnetoresistive head according to claim 190 , wherein said interdiffusion layer includes Mn.

198. A magnetoresistive head according to claim 190 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

199. A magnetoresistive head according to claim 190 , wherein said longitudinal bias layer is disposed adjacent said free magnetic layer; and said longitudinal bias layer comprises an antiferromagnetic X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

200. A magnetoresistive head according to claim 190 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

201. A magnetoresistive head comprising:

a ferromagnetic layer,

an antiferromagnetic layer disposed adjacent said ferromagnetic layer;

wherein said antiferromagnetic layer comprises an X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd; and

an interdiffusion layer formed between said ferromagnetic layer and said antiferromagnetic layer.

202. A magnetoresistive head according to claim 201 , wherein said interdiffusion layer includes an X element.

203. A magnetoresistive head according to claim 201 , wherein said interdiffusion layer includes Mn.

204. A magnetoresistive head according to claim 201 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

205. A magnetoresistive head according to claim 201 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

206. A magnetoresistive head according to claim 201 , wherein said ferromagnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

207. A magnetoresistive head according to claim 201 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range of about 50 to 300 Å.

208. A magnetoresistive head according to claim 201 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

209. A magnetoresistive head according to claim 207 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

210. A magnetoresistive head according to claim 207 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

211. A magnetoresistive head according to claim 207 , wherein a film thickness of said ferromagnetic layer is in the range of about 50 to 100 Å.

212. A magnetoresistive head according to claim 201 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

213. A magnetoresistive head according to claim 212 , wherein said ferromagnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

214. A magnetoresistive head according to claim 212 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range of about 50 to 300 Å.

215. A magnetoresistive head according to claim 212 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

216. A magnetoresistive head according to claim 214 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

217. A magnetoresistive head according to claim 214 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

218. A magnetoresistive head according to claim 214 , wherein a film thickness of said ferromagnetic layer is in the range of about 50 to 100 Å.

219. A magnetoresistive head according to claim 201 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

220. A magnetoresistive head according to claim 219 , wherein said ferromagnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

221. A magnetoresistive head according to claim 219 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range of about 50 to 300 Å.

222. A magnetoresistive head according to claim 219 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

223. A magnetoresistive head according to claim 221 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

224. A magnetoresistive head according to claim 221 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

225. A magnetoresistive head according to claim 221 , wherein a film thickness of said ferromagnetic layer is in the range of about 50 to 100 Å.

226. A magnetoresistive head according to claim 201 , wherein said X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

227. A magnetoresistive head according to claim 226 , wherein said ferromagnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

228. A magnetoresistive head according to claim 226 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic layer is in the range of about 50 to 300 Å.

229. A magnetoresistive head according to claim 226 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about from 200 ° C. to 350 ° C.

230. A magnetoresistive head according to claim 228 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

231. A magnetoresistive head according to claim 228 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

232. A magnetoresistive head according to claim 228 , wherein a film thickness of said ferromagnetic layer is in the range of about 50 to 100 Å.

233. A magnetoresistive head according to claim 201 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

234. A magnetoresistive head according to claim 201 , wherein said ferromagnetic layer exhibits a magnetoresistive effect; and said an exchange anisotropic magnetic field is generated in said interdiffusion layer.

235. A magnetoresistive head according to claim 234 , wherein said interdiffusion layer includes an X element.

236. A magnetoresistive head according to claim 234 , wherein said interdiffusion layer includes Mn.

237. A magnetoresistive head according to claim 234 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

238. A magnetoresistive head according to claim 234 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

239. A magnetoresistive head according to claim 234 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

240. A magnetoresistive head according to claim 234 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

241. A magnetoresistive head according to claim 234 , wherein said X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

242. A magnetoresistive head according to claim 234 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

243. A magnetoresistive head comprising:

a free magnetic layer;

a pinned magnetic layer;

a nonmagnetic layer interposed between said free magnetic layer and said pinned magnetic layer;

a longitudinal bias layer for orienting the magnetization direction of said free magnetic layer along a track direction, said longitudinal bias layer disposed adjacent said free magnetic layer, wherein said longitudinal bias layer comprises an antiferromagnetic X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd;

an antiferromagnetic layer;

an interdiffusion layer formed between said free magnetic layer and said longitudinal bias layer.

244. A magnetoresistive head according to claim 243 , wherein said free magnetic layer includes a read- track region and said longitudinal bias layer is disposed adjacent to and outside of said read - track region of said free magnetic layer.

245. A magnetoresistive head according to claim 243 , wherein said interdiffusion layer includes an X element.

246. A magnetoresistive head according to claim 243 , wherein said interdiffusion layer includes Mn.

247. A magnetoresistive head according to claim 243 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

248. A magnetoresistive head according to claim 243 , wherein said antiferromagnetic X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

249. A magnetoresistive head according to claim 248 , wherein said free magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

250. A magnetoresistive head according to claim 248 , wherein a film thickness of said longitudinal bias layer is in the range of about 100 to 500 Å and a film thickness of said free magnetic layer is in the range of about 50 to 300 Å.

251. A magnetoresistive head according to claim 248 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

252. A magnetoresistive head according to claim 250 , wherein a film thickness of said longitudinal bias layer is in the range of about 100 to 300 Å.

253. A magnetoresistive head according to claim 250 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

254. A magnetoresistive head according to claim 250 , wherein a film thickness of said free magnetic layer is in the range of about 50 to 100 Å.

255. A magnetoresistive head according to claim 243 , wherein said antiferromagnetic X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

256. A magnetoresistive head according to claim 255 , wherein said free magnetic layer comprises any one of an NiFe alloy, an NiFeCo alloy and Co.

257. A magnetoresistive head according to claim 255 , wherein a film thickness of said longitudinal bias layer is in the range of about 100 to 500 Å and a film thickness of said free magnetic layer is in the range of about 50 to 300 Å.

258. A magnetoresistive head according to claim 255 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

259. A magnetoresistive head according to claim 257 , wherein a film thickness of said longitudinal bias layer is in the range of about 100 to 300 Å.

260. A magnetoresistive head according to claim 257 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

261. A magnetoresistive head according to claim 257 , wherein a film thickness of said free magnetic layer is in the range of about 50 to 100 Å.

262. A magnetoresistive head according to claim 243 , wherein said antiferromagnetic X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

263. A magnetoresistive head according to claim 262 , wherein said free magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

264. A magnetoresistive head according to claim 262 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 500 Å and a film thickness of said free magnetic layer is in the range of about 50 to 300 Å.

265. A magnetoresistive head according to claim 262 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

266. A magnetoresistive head according to claim 264 , wherein a film thickness of said antiferromagnetic layer is in the range of about 100 to 300 Å.

267. A magnetoresistive head according to claim 264 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

268. A magnetoresistive head according to claim 264 , wherein a film thickness of said free magnetic layer is in the range of about 50 to 100 Å.

269. A magnetoresistive head according to claim 243 , wherein said antiferromagnetic X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

270. A magnetoresistive head according to claim 269 , wherein said free magnetic layer comprises one of an NiFe alloy, an NiFeCo alloy and Co.

271. A magnetoresistive head according to claim 269 , wherein a film thickness of said longitudinal bias layer is in the range of about 100 to 500 Å and a film thickness of said free magnetic layer is in the range of about 50 to 300 Å.

272. A magnetoresistive head according to claim 269 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

273. A magnetoresistive head according to claim 271 , wherein a film thickness of said longitudinal bias layer is in the range of about 100 to 300 Å.

274. A magnetoresistive head according to claim 271 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

275. A magnetoresistive head according to claim 271 , wherein a film thickness of said free magnetic layer is in the range of about 50 to 100 Å.

276. A magnetoresistive head according to claim 243 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

277. A magnetoresistive head comprising:
a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure disposed on a read - track region of said magnetoresistive head, said magnetoresistive effect structure having opposing ends;

a bias magnetization structure including a first part disposed on one of said opposing ends of said magnetoresistive effect structure and a second part disposed at the other one of said opposing ends of said magnetoresistive effect structure,

said first and second parts including a plurality of layers of an antiferromagnetic film and a plurality of layers of a ferromagnetic film, said layers of said antiferromagnetic film and said layers of ferromagnetic film stacked alternately to form a plurality of layers with at least one ferromagnetic film layer generating exchange coupling on upper and lower surfaces thereof in conjunction with said antiferromagnetic film layers; and

wherein bias magnetization is applied to said magnetoresistive effect structure by said magnetization structure.

278. A magnetoresistive head according to claim 277 , wherein an interdiffusion layer is formed between said magnetoresistive effect structure and said bias magnetization structure.

279. A magnetoresistive head according to claim 277 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

280. A magnetoresistive head according to claim 277 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer includes Mn.

281. A magnetoresistive head according to claim 277 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

282. A magnetoresistive head according to claim 277 , wherein said antiferromagnetic film comprises a X—Mn alloy where X comprises an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

283. A magnetoresistive head according to claim 282 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

284. A magnetoresistive head according to claim 282 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

285. A magnetoresistive head according to claim 282 , wherein an interdiffusion layer if formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

286. A magnetoresistive bead according to claim 284 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

287. A magnetoresistive head according to claim 284 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

288. A magnetoresistive head according to claim 284 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

289. A magnetoresistive head according to claim 282 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

290. A magnetoresistive head according to claim 289 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

291. A magnetoresistive head according to claim 289 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

292. A magnetoresistive head according to claim 289 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

293. A magnetoresistive head according to claim 291 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

294. A magnetoresistive head according to claim 291 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

295. A magnetoresistive head according to claim 291 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

296. A magnetoresistive head according to claim 282 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

297. A magnetoresistive head according to claim 296 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

298. A magnetoresistive head according to claim 296 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic films is in the range of about 50 to 300 Å.

299. A magnetoresistive head according to claim 296 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

300. A magnetoresistive head according to claim 298 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

301. A magnetoresistive head according to claim 298 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

302. A magnetoresistive head according to claim 298 , wherein a film thickness of said ferromagnetic films is in the range of about 50 to 100 Å.

303. A magnetoresistive head according to claim 282 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

304. A magnetoresistive head according to claim 303 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

305. A magnetoresistive head according to claim 303 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

306. A magnetoresistive head according to claim 303 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

307. A magnetoresistive head according to claim 305 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

308. A magnetoresistive head according to claim 305 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

309. A magnetoresistive head according to claim 305 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

310. A magnetoresistive head according to claim 282 , wherein said X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

311. A magnetoresistive head according to claim 310 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

312. A magnetoresistive head according to claim 310 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

313. A magnetoresistive head according to claim 310 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

314. A magnetoresistive bead according to claim 312 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

315. A magnetoresistive head according to claim 312 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

316. A magnetoresistive head according to claim 312 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

317. A magnetoresistive head according to claim 277 , wherein an interdiffusion layer is formed between said ferromagnetic film and antiferromagnetic film; and said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

318. A magnetoresistive head according to claim 277 , wherein an nonmagnetic intermediate film is disposed between said bias magnetization structure and said magnetoresistive effect structure.

319. A magnetoresistive head according to claim 318 , wherein said nonmagnetic intermediate film comprises at least one element selected from the group consisting of tantalum, zirconium, titanium, chromium, and hafnium.

320. A magnetoresistive head comprising:
a magnetoresistive effect structure exhibiting a magnetoresistive effect, said magnetoresistive effect structure disposed on a read - track region of said magnetoresistive head, said magnetoresistive effect structure having opposing ends;

said first and second parts including an antiferromagnetic film and a ferromagnetic film, said antiferromagnetic film and said ferromagnetic film stacked alternately to form a plurality of layers; and

an interdiffusion layer formed between said antiferromagnetic film and said ferromagnetic film;

wherein bias magnetization is applied to said magnetoresistive effect structure by said magnetization structure; and

wherein said antiferromagnetic film comprises a X—Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Ir, and Pd.

321. A magnetoresistive head according to claim 320 , wherein an interdiffusion layer is formed between said magnetoresistive effect structure and said bias magnetization structure.

322. A magnetoresistive head according to claim 320 , wherein said bias magnetization structure includes at least one ferromagnetic film which is disposed between antiferromagnetic films with interdiffusion layers formed between the surfaces of said ferromagnetic film and said antiferromagnetic films.

323. A magnetoresistive head according to claim 320 , wherein said bias magnetization structure includes at least one antiferromagnetic film which is disposed between ferromagnetic films with interdiffusion layers formed between the surfaces of said antiferromagnetic film and said ferromagnetic films.

324. A magnetoresistive head according to claim 320 , wherein said interdiffusion layer includes an X element.

325. A magnetoresistive head according to claim 320 , wherein said interdiffusion layer includes Mn.

326. A magnetoresistive head according to claim 320 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

327. A magnetoresistive head according to claim 320 , wherein said X—Mn alloy comprises about 5 to 54 at % of X and about 95 to 46 at % of Mn.

328. A magnetoresistive head according to claim 327 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

329. A magnetoresistive head according to claim 327 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

330. A magnetoresistive head according to claim 320 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

331. A magnetoresistive head according to claim 329 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

332. A magnetoresistive head according to claim 329 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

333. A magnetoresistive head according to claim 329 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

334. A magnetoresistive head according to claim 320 , wherein said X—Mn alloy comprises about 5 to 20 at % of X and about 95 to 80 at % of Mn.

335. A magnetoresistive head according to claim 334 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

336. A magnetoresistive head according to claim 334 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

337. A magnetoresistive head according to claim 334 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 220 ° C. to 350 ° C.

338. A magnetoresistive head according to claim 336 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

339. A magnetoresistive head according to claim 336 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

340. A magnetoresistive head according to claim 336 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

341. A magnetoresistive head according to claim 320 , wherein said X—Mn alloy comprises about 36 to 54 at % of X and about 64 to 46 at % of Mn.

342. A magnetoresistive head according to claim 341 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

343. A magnetoresistive head according to claim 341 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

344. A magnetoresistive head according to claim 341 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

345. A magnetoresistive head according to claim 343 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

346. A magnetoresistive head according to claim 343 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

347. A magnetoresistive head according to claim 343 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

348. A magnetoresistive head according to claim 320 , wherein said X—Mn alloy comprises about 44 to 54 at % of X and about 56 to 46 at % of Mn.

349. A magnetoresistive head according to claim 348 , wherein said ferromagnetic film comprises one of an NiFe alloy, an NiFeCo alloy and Co.

350. A magnetoresistive head according to claim 348 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 500 Å and a film thickness of said ferromagnetic film is in the range of about 50 to 300 Å.

351. A magnetoresistive head according to claim 348 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

352. A magnetoresistive head according to claim 350 , wherein a film thickness of said antiferromagnetic film is in the range of about 100 to 300 Å.

353. A magnetoresistive head according to claim 350 , wherein a film thickness of said interdiffusion layer is in the range of about 20 to 100 Å.

354. A magnetoresistive head according to claim 350 , wherein a film thickness of said ferromagnetic film is in the range of about 50 to 100 Å.

355. A magnetoresistive head according to claim 354 , wherein said interdiffusion layer is formed by heat treatment at a temperature in the range of about 200 ° C. to 350 ° C.

356. A magnetoresistive head according to claim 320 , wherein an nonmagnetic intermediate film is disposed between said magnetization structure and said magnetoresistive effect structure.

357. A magnetoresistive head according to claim 356 , wherein said nonmagnetic intermediate film comprises at least one element selected from the group consisting of tantalum, zirconium, titanium, chromium, and hafnium.

358. A magnetoresistive head according to claim 320 , wherein said bias magnetization structure includes a plurality of ferromagnetic films and a plurality of antiferromagnetic films and a plurality of interdiffusion layers formed between the surfaces of said ferromagnetic films and said antiferromagnetic films.

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