Composition for producing low sintering temperature ceramic dielectrics and method of manufacturing such dielectrics
Abstract
Powders of BaCO 3 , TiO 2 , ZnO, etc. are mixed to each other at a predetermined ratio of quantity, calcined in an atmospheric air at π°-120° C., and pulverized to obtain a calcined powder having an average grain size from 1 to 3 μ m, 0.1 to 20 parts-by weight of a powder having an average grain size from 0.1 to 1.5 μm comprising a glass having a transition point of not higher than 450° C. obtained by mixing powders of Pb 3 O 4 , SiO 2 , Na 2 O, etc. to each other, melting and then pouring into water and pulverizing the thus obtained glass is admixed to the calcined powder. The mixture is dried, pelleted by adding a resin and the pellet powder is molded into a cylindrical shape, applied with CIP (Cold isotartic press), and the molding product after the treatment is sintered in an atmospheric air at 850° to 1000° C. to obtain a dielectric ceramic sintered at low temperature. The resultant dielectric ceramic has high denseness and high unloaded Q value while maintaining τf within a practical range.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A ceramic dielectric prepared by low temperature sintering of a mixture comprising:
a calcined powder comprising a BaO.xTiO 2 compound, wherein 3.0≦x≦5.7, from 0.1 to 20 parts by weight of ZnO per 100 parts by weight of the BaO.xTiO 2 compound, from 0.1 to 10 parts by weight of Ta 2 O 5 per 100 parts by weight of the BaO.xTiO 2 compound, and from 0. 1 to 1 parts by weight of MnO 2 per 100 parts by weight of the BaO.xTiO 2 compound; and
from 0.1 to 20 parts by weight of a glass powder per 100 parts by weight of the calcined powder, wherein the glass powder has a transition point less than or equal to 450° C.
2. The ceramic dielectric of claim 1 , wherein the calcined powder further includes at least one of:
less than 1 part by weight of WO 3 per 100 parts by weight of the BaO.xTiO 2 compound;
not more than 15 parts by weight of SaO 2 per 100 parts by weight of the BaO.xTiO 2 compound;
not more than 15 parts by weight of MgO per 100 parts by weight of the BaO.xTiO 2 compound;
not more than 10 parts by weight of SrO per 100 parts by weight of the BaO.xTiO 2 compound; and
not more than 5 parts by weight of ZrO 2 per 100 parts by weight of the BaO.xTiO 2 compound.
3. The ceramic dielectric of claim 1 or 2 , wherein the composition has a water absorption of not more than 0.5%, and wherein a product of an unloaded Q value and a resonance frequency of the composition is not less than 2000 GHz as measured using a parallel conductor plate type dielectric resonator method at a measuring frequency of 1-5 GHz.
4. A composition as defined in claim 3 , wherein the water absorption of the composition is less than 0.1%.
5. A ceramic dielectric of claim 3 , wherein the product of the unloaded Q value and the resonance frequency of the composition is not less than 3000 GHz.
6. The ceramic dielectric of claim 4 , wherein the product of the unloaded Q value and the resonance frequency of the composition is not less than 3000 GHz.
7. A method of manufacturing a ceramic dielectric comprising the steps of:
calcining a composition at 900° to 1200° C. to provide a calcined product, the composition comprising a BaO.xTiO 2 (3.0≦x≦5.7) compound, from 0.1 to 20 parts by weight of ZnO per 100 parts by weight of the BaO.xTiO 2 compound, from 0.1 to 10 parts by weight of Ta 2 O 5 per 100 parts by weight of the BaO.xTiO 2 compound, and from 0.1 to 1 parts by weight of MaO 2 per 100 parts by weight of the BaO.xTiO 2 compound;
pulverizing the calcined product;
mixing 1.0 to 20 parts by weight of a glass powder per 100 parts by weight of the pulverized calcined product with the pulverized calcined product, the glass powder having a transition point less than or equal to 450° C.;
molding the pulverized calcined product mixed with the glass powder; and
sintering the molded pulverized calcined product mixed with the glass powder at 850° to 1000° C.
8. A method of 7 , further comprising the step of blending with the composition at least one of:
not more than 1 part by weight of WO 3 per 100 parts by weight of the BaO.xTiO 2 compound;
not more than 15 parts by weight of SnO 2 per 100 parts by weight of the BaO.xTiO 2 compound;
not more than 15 parts by weight of MgO per 100 parts by weight of the BaO.xTiO 2 compound;
not more than 10 parts by weight of SrO per 100 parts by weight of the BaO.xTiO 2 compound; and not more than 5 parts by weight of ZrO 2 per 100 parts by weight of the BaO.xTiO 2 compound.
9. A method of claim 7 or 8 wherein the glass powder further includes 5 to 60 mol % of PbO per 100 mol % of the glass powder.
10. A method of claim 7 or 8 , wherein the glass powder further includes 5 to 60 mol % of PbO and 0.01 to 5 mol % of R 2 O per 100 mol % of the glass powder, which R represents an alkali metal.
11. A method of claim 7 or 8 , wherein an average grain size of the pulverized calcined product is from 1 to 3 μm, and wherein an average grain size of the glass powder is from 0.1 to 1.5 μm and is less than the average grain size of the pulverized calcined product.
12. A method of claim 9 , wherein an average grain size of the pulverized calcined powder is from 1 to 3 μm, and wherein an average grain size of the glass powder is from 0.1 to 1.5 μm and is less than the average grain size of pulverized calcined product.
13. A method of claim 10 , wherein an average grain size of the pulverized calcined product is from 1 to 3 μm, and wherein an average grain size of the glass powder is from 0.1 to 1.5 μm and is less than the average grain size of pulverized calcined product.
14. A ceramic dielectric prepared by low temperature sintering of a mixture comprising:
a calcined powder including a BaO.xTiO 2 base compound ( 3 . 0 ≦x≦ 5 . 7 ), ZnO, Ta 2 O 5 and MnO 2 ; and
a glass powder, wherein the glass powder has a transition point less than or equal to 450 ° C.; and
wherein the product of an unloaded Q value and a resonance frequency of the dielectric ( Q×f ) is not less than 2000 GHz as measured using a parallel conductor plate type dielectric resonator method at a measuring frequency of 1 - 5 GHz.
15. The ceramic dielectric of claim 14 , wherein the product of an unloaded Q value and a resonance frequency of dielectric ( Q×f ) is not less than 3000 GHz.
16. A ceramic dielectric prepared by low temperature sintering of a mixture comprising:
a calcined powder comprising a BaO.TiO
2
compound, wherein 3 . 0 ≦x≦ 5 . 7 , from 0 . 1 to 20 parts by weight of ZnO per 100 parts by weight of the BaO.xTiO
2
compound, from 0 . 1 to 10 parts by weight of Ta
2
O
5
per 100 parts by weight of the BaO.xTiO
2
compound, and from 0 . 1 to 1 parts by weight of MnO
2
per 100 parts by weight of the BaO.xTiO
2
compound; and
a glass powder, wherein the glass powder has a transition point less than or equal to 450 ° C.
17. A method of manufacturing a ceramic dielectric comprising of steps of:
calcining a composition at 900 to 1200 ° C. to provide a calcined product, the composition comprising a BaO.TiO 2 ( 3 . 0 ≦x≦ 5 . 7 ) compound, from 0 . 1 to 20 parts by weight of ZnO per 100 parts by weight of the BaO.xTiO 2 compound, from 0 . 1 to 10 parts by weight of Ta 2 O 5 per 100 parts by weight of the BaO.xTiO 2 compound, and from 0 . 1 to 1 parts by weight of MnO 2 per 100 parts by weight of the BaO.xTiO 2 compound;
pulverizing the calcined product;
mixing a glass powder with the pulverized calcined product, the glass powder having a transition point less than or equal in 450 ° C.;
molding the pulverized calcined product mixed with the glass powder; and
sintering the molded pulverized calcined product mixed with the glass powder at 850 to 1000 ° C.Cited by (0)
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