Thermal-type infrared imaging device

Abstract

A thermal-type infrared imaging device includes a first thermo-electric converting element ( 101 ) for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray, a first bipolar transistor ( 102 ) having its emitted connected to the first thermo-electric converting element ( 101 ), and a second bipolar transistor ( 104 ) having its collector connected to the collector of the first bipolar transistor ( 102 ). The thermal-type infrared imaging device further includes a resistor ( 103 ) connected at one end thereof to a power supply and at the other end to the emitter of the second bipolar transistor ( 104 ), and an integration capacitor ( 105 ) connected to a connecting point of the respective collectors of the first and second bipolar transistor ( 102 and 104 ).

What is claimed is:  
     
       1. A thermal-type infrared imaging device comprising: 
       a first thermo-electric converting element for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray, said first thermo-electric converting element being coupled to a first power source line;  
       a first transistor connected between said first thermo-electric converting element and a node;  
       a resistor;  
       a second transistor connected between said resistor and said node; and  
       an integration capacitor connected between said node and a second power source line.  
     
     
       2. The device as claimed in  claim 1 , wherein said first transistor is a first bipolar transistor having a first emitter connected to said resistor and a first collector connected to said node and said second transistor is a second bipolar transistor having a second emitter connected to said resistor and a second collector connected to said node. 
     
     
       3. The device as set forth in  claim 2 , wherein values of currents flowing through the respective collectors of said first and second bipolar transistors are nearly equal to each other. 
     
     
       4. The device as claimed in  claim 1 , wherein said first transistor is a first MOS transistor having a first source connected to said resistor and a first drain connected to said node and said second transistor is a second MOS transistor having a second source connected to said thermo-electric converting element and a second drain connected to said node. 
     
     
       5. The device as claimed in  claim 1 , wherein a value of said resistor is 1.5 to 10 times the resistance value of said first thermo-electric converting element. 
     
     
       6. The device as claimed in  claim 1 , wherein said resistor is a second thermo-electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo-electric converting elements are nearly equal to each other. 
     
     
       7. The device as claimed in  claim 6 , wherein a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo-electric converting element is provided in said thermal isolating structure section, and said second thermo-electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section. 
     
     
       8. The device as claimed in  claim 6 , wherein said first transistor is a MOS field-effect transistor having a floating gate. 
     
     
       9. The device as claimed in  claim 8 , wherein said MOS field-effect transistor varies its threshold voltage in correspondence with information from said integration capacitor, whereby a fluctuation in a ratio of resistance of said first and second thermo-electric converting elements is corrected. 
     
     
       10. A thermal-type imaging device comprising: 
       a plurality of first thermo-electric converting elements arranged in the form of a two-dimensional matrix, each generating an electric signal which corresponds to a temperature determined according to heat generated by absorbing an incident infrared ray, each having a first end and a second end, said second end being coupled to a power source line;  
       a plurality of first bipolar transistors each connected between said first thermo-electric converting element and a node;  
       a plurality of resistors;  
       a plurality of second transistors each connected between said resistor and said node; and  
       a plurality of integration capacitors arranged in each line or a plurality of lines of said two-dimensional matrix, each integration capacitor having a first electrode connected to said node and a second electrode coupled to said power source line.  
     
     
       11. The device as claimed in  claim 10 , wherein integration operation in each said integration capacitors is performed at the same time. 
     
     
       12. The device as claimed in  claim 10 , wherein integration operation in each said integration capacitors are performed sequentially. 
     
     
       13. The device as claimed in  claim 10 , wherein integration operation and read operation of integration value produced by said integration operation of each integration capacitors is performed at the same time. 
     
     
       14. The device as claimed in  claim 10 , wherein read operation of integration value produced by an integration operation of each integration capacitors is performed sequentially. 
     
     
       15. The device as claimed in  claim 10 , wherein further comprises, 
       a first shift register;  
       a plurality of first switches controlled an electronical connection/disconnection between said first thermo-electric converting element and said node in response to first information from said first shift register;  
       a second shift register; and  
       a plurality of second switches selecting the respective integration capacitor in response to second information from said second shift register.  
     
     
       16. The device as claimed in  claim 10 , wherein a ramp waveform generator is connected to a control electrode of said second transistor. 
     
     
       17. The device as claimed in  claim 16 , wherein said ramp waveform generator comprises; 
       a ramp generation resistor;  
       a ramp generation transistor connected between said resistor and a second node; and  
       a ramp generation capacitor connected to said second node.  
     
     
       18. A thermal-type imaging device comprising: 
       a plurality of first thermo-electric converting elements arranged in the form of a two-dimensional matrix for each pixel, said first thermo-electric converting elements generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray, each of said first thermo-electric converting elements being coupled to a first power source line;  
       a shift register outputting a selecting signal;  
       a transistor for selecting at least one of said first thermo-electric converting elements in response to said selecting signal; and  
       a level converter converting said selecting signal to a level which drives said transistor;  
       a plurality of first bipolar transistors each connected between the respective first thermo-electric converting element and a corresponding one of nodes;  
       a plurality of second thermo-electric converting elements which are insensitive to incident infrared rays;  
       a plurality of second transistors each connected between a corresponding one of said thermo-electric converting elements and a corresponding one of said nodes such that a current flowing through said first transistor is substantially equal to a current flowing through said the respective second transistor when said incident infrared ray is blocked; and  
       a plurality of integration capacitors arranged in each line or a plurality of lines of said two-dimensional matrix, each integration capacitor coupled between a corresponding one of said nodes and a second power source line.  
     
     
       19. A thermal-type infrared imaging device comprising: 
       a first thermo-electric converting element which generates an electric signal corresponding to a temperature determined according to heat generated by absorbing an incident infrared ray, said first thermo-electric converting element being coupled to a node; and  
       a constant current source circuit coupled to said node and which supplies a current produced thereof to said first thermo-electric converting element to cancel a current flowing through said first thermo-electric converting element when said incident infrared ray is blocked against said first thermo-electric converting element.  
     
     
       20. The device as claimed in  claim 19 , wherein a current flowing through said constant source circuit is substantially equal to a current flowing through said first thermo-electric converting element when said incident infrared ray is blocked. 
     
     
       21. The device as claimed in  claim 20 , wherein said constant current source circuit comprises a second thermo-electric converting element which is insensitive to incident infrared rays and a first transistor having a first control gate supplied to a first constant voltage and a current path between said node and said second thermo-electric converting element. 
     
     
       22. The device as claimed in  claim 21 , said device further comprising: 
       a capacitor coupled between said node and a first power source line;  
       a second transistor coupled between said node and said first thermo-electric converting element and having a second control gate supplied to a second constant voltage;  
       a third transistor coupled between said first thermo-electric converting element and said first power source line.  
     
     
       23. The device as claimed in  claim 21 , said device further comprising a ramp waveform generator connected to said first control gate of said first transistor. 
     
     
       24. A thermo-type infrared imaging device comprising: 
       a first thermo-electric converting element for generating an electric signal which corresponds to a temperature determined according to heat generated by absorbing an incident infrared ray;  
       a first transistor connected between said first thermo-electric converting element and a node;  
       a resistor;  
       a second transistor connected between said resistor and said node; and  
       an integration capacitor connected to said node, said first transistor being a first bipolar transistor having a first emitter connected to said resistor and a first collector connected to said node and said second transistor being a second bipolar transistor having a second emitter connected to said resistor and a second collector connected to said node,  
       wherein values of currents flowing through the respective collectors of said first and second bipolar transistors are nearly equal to each other.  
     
     
       25. A thermal-type imaging device comprising: 
       a plurality of first thermo-electric converting elements arranged in the form of a two-dimensional matrix, each generating an electric signal which corresponds to a temperature determined according to heat generated by absorbing an incident infrared ray, each having a first end and a second end, said second end being coupled to a power source line;  
       a plurality of first bipolar transistors each connected between said first thermo-electric converting element and a node;  
       a plurality of resistors;  
       a plurality of second transistors each connected between said resistor and said node; and  
       a plurality of integration capacitors arranged in each line or a plurality of lines of said two-dimensional matrix, each integration capacitor having a first electrode connected to said node and a second electrode coupled to said power source line,  
       wherein a ramp waveform generator is connected to a control electrode of said second transistor.  
     
     
       26. A thermal- type infrared imaging device comprising:    
         a first thermo - electric converting element for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray;    
         a first Field Effect Transistor (FET) having a first source connected to said first thermo - electric converting element and a first drain considered to a node;    
       
         a resistor;  
       
       
         a second FET having a second source connected to said resistor and a second drain connected to said node; and  
       
       
         an integration capacitor connected to said node. 
       
     
     
       27. The device as claimed in  claim 26 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       28. The device as claimed in  claim 26 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       29. The device as claimed in  claim 26 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       30. A thermal- type imaging device comprising:    
         a plurality of first thermo - electric converting elements arranged in the form of a two - dimensional matrix, each generating an electric signal which corresponds to a temperature determined according to heat generated by absorbing an incident infrared ray;    
         a plurality of first FETs each having a first source connected to said first thermo - electric converting element and a first drain connected to a node;    
       
         a plurality of resistors;  
       
       
         a plurality of second FETs each having a second source connected to one of said resistors and a second drain connected to said node; and  
       
         a plurality of integration capacitors arranged in each line or a plurality of lines of said two - dimensional matrix, each integration capacitor having a first electrode connected to said node.   
     
     
       31. The device as claimed in  claim 30 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       32. The device as claimed in  claim 30 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       33. The device as claimed in  claim 30 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       34. A thermal- type infrared imaging device comprising:    
         a first thermo - electric converting element for generating an electric signal which corresponds to a temperature determined according to heat generated by absorbing an incident infrared ray;    
         a first bipolar transistor having a first emitter connected to said first thermo - electric converting element and a first collector connected to a node;    
       
         a resistor;  
       
       
         a second bipolar transistor having a second emitter connected to resistor and a second collector connected to said node; and  
       
       
         an integration capacitor connected to said node. 
       
     
     
       35. The device as claimed in  claim 34 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       36. The device as claimed in  claim 34 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       37. The device as claimed in  claim 34 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       38. The device as claimed in  claim 39 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       39. A thermal- type imaging device comprising:    
         a plurality of first thermo - electric converting elements arranged in the form of a two - dimensional matrix, each generating an electrical signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray;    
         a plurality of first bipolar transistors each having an emitter connected to said first thermo - electric converting element having a collector connected to a node;    
       
         a plurality of resistors;  
       
       
         a plurality of second bipolar transistors each having an emitter connected to resistor and having a collector connected to said node; and  
       
       
         a plurality of integration capacitors arranged in each line or a plurality of lines of said two-dimensional matrix, each integration capacitor having a first electrode connected to said node. 
       
     
     
       40. The device as claimed in  claim 39 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       41. The device as claimed in  claim 39 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       42. A thermal- type infrared imaging device comprising:    
         a first thermo - electric converting element for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray;    
         a first FET that supplies a voltage to said first thermo - electric converting element and a current decided by said voltage and resistance of said element to a node;    
       
         a resistor;  
       
       
         a second FET that supplies a voltage to said resistor and a current decided by said voltage and resistance of said resistor to said node; and  
       
       an integration capacitor connected to said node. 
     
     
       43. The device as claimed in  claim 42 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       44. The device as claimed in  claim 42 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective terminal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       45. The device as claimed in  claim 42 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       46. A thermal- type imaging device comprising:    
         a plurality of first thermo - electric converting elements arranged in the form of a two - dimensional matrix, each generating an electric signal which corresponds to a temperature determined according to heat generated by absorbing an incident infrared ray;    
         a plurality of first FETs each supplying a voltage to said first thermo - electric converting element and a current decided by said voltage and resistance of said element to a node;    
       
         a plurality of resistors;  
       
       
         a plurality of second FETs each supplying a voltage to said resistor and a current decided by said voltage and resistance of said resistor to said node; and  
       
         a plurality of integration capacitors arranged in each line or a plurality of lines of said two - dimensional matrix, each integration capacitor having a first electrode connected to said node.   
     
     
       47. The device as claimed in  claim 46 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       48. The device as claimed in  claim 46 , wherein said resistor is a second thermal- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       49. The device is claimed in  claim 46 , wherein said resistor is a second thermal- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       50. A thermal- type infrared imaging device comprising:    
         a first thermo - electric converting element for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray;    
         a first bipolar transistor that supplies a voltage to said first thermo - electric converting element and a current decided by said voltage and resistance of said element to a node;    
       
         a resistor;  
       
       
         a second bipolar transistor that supplies a voltage to said resistor and a current decided by said voltage and resistance of said resistor to said node; and  
       
       
         an integration capacitor connected to said node. 
       
     
     
       51. The device as claimed in  claim 50 , wherein said first thermo- electric converting element is coupled to a first power source line.   
     
     
       52. The device as claimed in  claim 50 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       53. The device as claimed in  claim 50 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.   
     
     
       54. A thermal- type imaging device comprising:    
         a plurality of first thermo - electric converting elements arranged in the form of a two - dimensional matrix, each generating an electric signal which correspondence to a temperature determined according to heat generated by absorbing an incident infrared ray;    
         a plurality of first bipolar transistors each supplying a voltage to said first thermo - electric converting element and a current decided by said voltage and resistance of said element to a node;    
       
         a plurality of resistors;  
       
       
         a plurality of second bipolar transistors each supplying a voltage to said resistor and each supplying said node with a current decided by said voltage and a resistance of said resistor; and  
       
         a plurality of integration capacitors arranged in each line or a plurality of lines of said two - dimensional matrix, each integration capacitor having a first electrode connected to said node.   
     
     
       55. The device as claimed in  claim 54 , wherein said first thermo- electric converting element coupled to a first power source line.   
     
     
       56. The device as claimed in  claim 54 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other.   
     
     
       57. The device as claimed in  claim 54 , wherein said resistor is a second thermo- electric converting element whose temperature does not change by heat generated by absorbing an incident infrared ray and the respective thermal coefficients of said second and first thermo - electric converting elements are nearly equal to each other, and    
         a thermal isolating structure section is provided on a semiconductor substrate for blocking heat radiation, said first thermo - electric converting element is provided in said thermal isolating structure section, and said second thermo - electric converting element is provided in said semiconductor substrate other than said thermal isolating structure section.