Interconnect structure and method for forming the same

Abstract

An interconnection structure includes an interlevel insulating film, made of organic-containing silicon di oxide, between lower- and upper-level metal interconnects. A phenyl group, bonded to a silicon atom, is introduced into silicon di oxide in the organic-containing silicon di oxide.

1. A method for forming an interconnection structure, comprising the steps of:
 forming an interlevel insulating film out of organic-containing silicon di oxide over lower-level metal interconnects by a CVD process using a reactive gas containing phenyltrimethoxy silane, a phenyl group, bonded to a silicon atom, being introduced into silicon di oxide in the organic-containing silicon di oxide;  
 forming wiring grooves and contact holes, communicating with the wiring grooves and exposing the lower-level metal interconnects, in the interlevel insulating film; and  
 forming upper-level metal interconnects and contacts, interconnecting the lower- and upper-level metal interconnects together, by filling in the wiring grooves and the contact holes with a metal film.  
 
     
     
       2. A method for forming an interconnection structure, comprising the steps of:
 forming a first insulating film, mainly composed of organic-containing silicon di oxide, in which silicon di oxide contains an organic component, over lower-level metal interconnects; wherein a phenyl group, bonded to a silicon atom, is introduced into silicon di oxide in the organic-containing silicon di oxide;  
 forming a second insulating film, mainly composed of an organic component, over the first insulating film;  
 forming wiring grooves and contact holes, which communicate with the wiring grooves and expose the lower-level metal interconnects, by selectively etching the second and first insulating films, respectively; and  
 forming upper-level metal interconnects and contacts, interconnecting the lower- and upper-level metal interconnects together, by filing in the wiring grooves and the contact holes with a metal film.  
 
     
     
       3. A method for forming an interconnection structure, comprising the steps of:
 forming a first insulating film, mainly composed of organic-containing silicon di oxide, in which silicon di oxide contains an organic component, over metal interconnects to cover the metal interconnects and to leave grooves between the metal interconnects;  
 forming a second insulating film, having a relative dielectric constant lower than that of the first insulating film, on the first insulating film to fill in the grooves; and  
 forming a third insulating film, having a composition different from that of the second insulating film, over the second insulating film.  
 
     
     
       4. The method of  claim 3 , wherein the second insulating film is mainly composed of an organic component, and
 wherein the third insulating film is mainly composed of organic-containing silicon di oxide, in which silicon di oxide contains an organic component.  
 
     
     
       5. The method of  claim 4 , wherein a phenyl group, bonded to a silicon atom, is introduced into silicon di oxide in the organic-containing silicon di oxide. 
     
     
       6. A method for forming an interconnection structure, comprising the steps of:
 forming a first insulating film over low-level metal interconnects;  
 forming a second insulating film, which has a different composition than that of the first insulating film and is mainly composed of an organic component, over the first insulating film;  
 forming a conductive  mask layer film on the second insulating film;  
 forming a first resist pattern on the conductive film, the first resist pattern having a plurality of openings for forming wiring grooves;  
 etching the conductive film using the first resist pattern as a mask, therapy forming a mask pattern out of the conductive film to have the openings for forming wiring grooves;  
 forming a second resist pattern over the first resist pattern, the second resist pattern having a plurality of openings for forming contact holes;  
 selectively etching the second insulating film, thereby patterning the second insulating film to have the openings for forming contact holes and removing the first and second resist patterns;  
 etching the first insulating film using the patterned second insulating film as a mask, thereby forming contact holes in the first insulating film to expose the lower-level metal interconnects;  
 etching the second insulating film using the mask pattern as a mask, thereby forming wiring grooves in the second insulating film; and  
 filing in the wiring grooves and the contact holes with a metal film, thereby forming upper-level interconnects and contacts interconnecting the lower- and upper-level metal interconnects together.  
 
     
     
       7. The method of  claim 6 , wherein the first insulating film is mainly composed of organic-containing silicon di oxide, in which silicon di oxide contains an organic component. 
     
     
       8. The method of  claim 7 , wherein a phenyl group, bonded to a silane atom, is introduced into silicon di oxide in the organic-containing silicon di oxide.