Semiconductor memory

Abstract

A semiconductor memory such as a dynamic RAM having memory mats each divided into a plurality of units or sub-memory mats. Each sub-memory mat comprises: a memory array having sub-word lines and sub-bit lines intersecting orthogonally and dynamic memory cells located in lattice fashion at the intersection points between the intersecting sub-word and sub-bit lines; a sub-word line driver including unit sub-word line driving circuits corresponding to the sub-word lines; a sense amplifier including unit amplifier circuits and column selection switches corresponding to the sub-bit lines; and sub-common I/O lines to which designated sub-bit lines are connected selectively via the column selection switches. The sub-memory mats are arranged in lattice fashion. Above the sub-memory mats is a layer of: main word lines and columns selection signal lines intersecting orthogonally, the main word lines having a pitch that is an integer multiple of the pitch of the sub-word lines, the column selection signal lines having a pitch that is an integer multiple of the pitch of the sub-bit lines; and main common I/O lines to which designated sub-common I/O lines are connected selectively.

1. A semiconductor memory comprising:
 a plurality of first regions arranged in lattice fashion, each of which corresponds to a memory array including a plurality of main word lines extending in a first direction, a plurality of sets of sub-word lines extending in said first direction, a plurality of pairs of data lines extending in a second direction perpendicular to said first direction and a plurality of memory cells, each of which is coupled to a corresponding one of said plurality of sub-word lines and a corresponding one of said data lines, one of said plurality of main word lines being allotted to one of said plurality of sets of sub-word lines;  
 a plurality of second regions, each of which is arranged alternately with each of said first regions arranged along said first direction and each of which includes sub-word line drivers connected to said sub-word lines;  
 a plurality of third regions, each of which is arranged alternately with each of said first regions arranged along said second direction and each of which includes sense amplifiers connected to said data lines; and  
 a plurality of fourth regions, each of which is arranged alternately with each of said third regions arranged along said first direction,  
 wherein each of said plurality of main word lines extends through one or more of said first regions arranged along said first direction;  
 wherein said semiconductor memory further includes:  
 a plurality of pairs of sub-common data lines, each of which extends in said first direction through said third regions arranged along said first direction;  
 first switching circuits formed in said third regions and connected interposingly between said plurality of pairs of data lines and a corresponding one of said pairs of sub-common data lines;  
 a plurality of pairs of main-common data lines, each of which extends in said second direction through one or more of second regions arranged along said second direction; and  
 second switching circuits formed in said fourth regions and connected interposingly between a corresponding one of said pairs of main-common data lines and a corresponding one of said pairs of sub-common data lines.  
 
     
     
       2. A The semiconductor memory according to  claim 1 ,
 wherein a number of memory arrays allotted to one of said main word-lines is greater than a number of memory arrays allotted to a corresponding one of said pairs of sub-common data lines.  
 
     
     
       3. A The semiconductor memory according to  claim 1 ,
 wherein a length of said each main word-line is longer than a length of said each pair of sub-common data lines.  
 
     
     
       4. A semiconductor memory comprising:
 a first region extending in a first direction;  
 a second region extending in said first direction and in parallel with said first region;  
 a third region extending in a second direction perpendicular to said first direction;  
 a fourth region formed as a rectangle, two sides of which are contiguous to said first region and said third region, respectively; and  
 a fifth region formed as a rectangle, three sides of which are contiguous to said first region, said second region and said third region, respectively;  
 wherein said third region includes a pair of main common data lines extending in said second direction,  
 wherein said fourth region includes a first memory array having a plurality of first main word lines extending in said first direction, a plurality of sets of first sub-word lines extending in said first direction, a plurality of pairs of first data lines extending in said second direction and a plurality of first dynamic memory cells, each of which is coupled to a corresponding one of said plurality of first sub-word lines, each of said sets of first sub-word lines corresponding to one of said plurality of first main word lines,  
 wherein said fifth region includes a second memory array having a plurality of second main word lines extending in said first direction, a plurality of sets of second sub-word lines extending in said first direction, a plurality of pairs of second data lines extending in said second direction and a plurality of second dynamic memory cells, each of which is coupled to a corresponding one of said plurality of second sub-word lines, each of said sets of second sub-word lines corresponding to one of said plurality of second main word lines,  
 wherein said first region includes: 
 (1) a pair of first sub-common data lines extending in said first direction,  
 (2) first sense amplifiers connected to said plurality of pairs of first data lines and  
 (3) first switching circuits connected interposingly between said plurality of pairs of first data lines and said pair of first sub-common data lines,  
 
 wherein said second region includes: 
 (1) a pair of second sub-common data lines extending in said first direction,  
 (2) second sense amplifiers connected to said plurality of pairs of second data lines, and  
 (3) second switching circuits connected interposingly between said plurality of pairs of second data lines and said pair of second sub-common data lines,  
 
 wherein said first region and said third region intersect in a first crossing area including: 
 (1) a third switching circuit connected interposingly between said pair of first sub- common data lines and  said pair of main common data lines,  
 (2) a fourth switching circuit which provides said first sense amplifiers with a first positive power supply voltage, and  
 (3) a fifth switching circuit which provides said first sense amplifiers with a second positive power supply voltage lower than said first positive power supply voltage, and  
 
 wherein said second region and said third region intersect in a second crossing area including: 
 (1) a sixth switching circuit connected interposingly between said pair of second sub- common data lines and  said pair of main common data lines,  
 (2) a seventh switching circuit which provides said second sense amplifiers with said first positive power supply voltage, and  
 (3) an eighth switching circuit which provides said second sense amplifiers with said second positive power supply voltage.  
 
 
     
     
       5. A The semiconductor memory according to  claim 4 ,
 wherein said third region includes first sub-word line drivers coupled to said first sub-word lines and second sub-word line drivers coupled to said second sub-word lines.  
 
     
     
       6. A The semiconductor memory according to  claim 4 ,
 wherein each of said first and second sense amplifiers includes a pair of PMOS transistors and a pair of NMOS transistors, each of said pairs of PMOS and NMOS transistors having sources coupled in common, drains coupled to corresponding pairs of data lines and dates cross-coupled to said drains,  
 wherein each of said first and second sense amplifiers provides said corresponding pair of data lines with a pair of complementary signals having a high side voltage and a low side voltage on the basis of information of a corresponding one of said dynamic memory cells,  
 wherein, in a first period, said first and second sense amplifiers are driven by said first positive power supply voltage, and  
 wherein, in a second period following said first period, said first and second sense amplifiers are driven by said second positive power supply voltage.  
 
     
     
       7. A semiconductor memory comprising:
 a first region extending in a first direction;  
 a second region extending in said first direction and in parallel with said first region;  
 a third region extending in a second direction perpendicular to said first direction;  
 a fourth region formed as a rectangle, two sides of which are contiguous to said first region and said third region, respectively; and  
 a fifth region formed as a rectangle, three sides of which are contiguous to said first region, said second region and said third region, respectively;  
 wherein said third region includes a pair of main common data lines extending in said second direction,  
 wherein said fourth region includes a first memory array having a plurality of first main word lines extending in said first direction, a plurality of sets of first sub-word lines extending in said first direction, a plurality of pairs of first data lines extending in said second direction and a plurality of first dynamic memory cells, each of which is coupled to a corresponding one of said plurality of first sub-word lines, each of said sets of first sub-word lines corresponding to one of said plurality of first main word lines,  
 wherein said fifth region includes a second memory array having a plurality of second main word lines extending in said first direction, a plurality of sets of second sub-word lines extending in said first direction, a plurality of pairs of second data lines extending in said second direction and a plurality of second dynamic memory cells, each of which is coupled to a corresponding one of said plurality of second sub-word lines, each of said sets of second sub-word lines corresponding to one of said plurality of second main word lines,  
 wherein said first region includes: 
 (1) a pair of first sub-common data lines extending in said first direction,  
 (2) first sense amplifiers connected to said plurality of pairs of first data lines and  
 (3) first switching circuits connected interposingly between said plurality of pairs of first data lines and said pair of first sub-common data lines,  
 
 wherein said second region includes: 
 (1) a pair of second sub-common data lines extending in said first direction,  
 (2) second sense amplifiers connected to said plurality of pairs of second data lines, and  
 (3) second switching circuits connected interposingly between said plurality of pairs of second data lines and said pair of second sub-common data lines,  
 
 wherein said first region and said third region intersect in a first crossing area including a third switching circuit connected interposingly between said pair of first sub-common data lines and said pair of main common data lines,  
 wherein said second region and said third region intersect in a second crossing area including a fourth switching circuit connected interposingly between said pair of second sub-common data lines and said pair of main common data lines, and  
 wherein each of said first and second sub-word line drivers include: 
 (1) a first PMOS transistor having a gate connected to a corresponding one of said main word lines, a drain connected to a corresponding one of said sub-word lines and a source receiving a first signal,  
 (2) a first NMOS transistor having a gate connected to the gate of said first PMOS transistor, a drain connected to the drain of said first PMOS transistor and a source connected to a ground potential, and  
 (3) a second NMOS transistor having a drain connected to the drain of said first NMOS transistor, a source connected to said ground potential and a gate receiving a second signal, said first and second signals being complementary signals.  
 
 
     
     
       8. A The semiconductor memory according to  claim 7 , wherein said semiconductor memory is formed on a P-type substrate comprising:
 (1) a first N-well,  
 (2) a second N-well formed in said first N-well,  
 (3) a first P-well formed in said first N-well, and  
 (4) a second P-well formed in said first N-well,  
 wherein the source and the drain of said first PMOS are in said second N-well,  
 wherein the source and the drain of said first NMOS are in said first P-well, and  
 wherein the source and the drain of a switching NMOS transistor, forming one of said dynamic memory cells, are in said second P-well.  
 
     
     
       9. A The semiconductor memory according to  claim 8 , wherein said first N-well is supplied with a voltage corresponding to a high level of said first signal, and
 wherein said P-type substrate is supplied with said ground potential.  
 
     
     
       10. A semiconductor memory comprising:
   a plurality of first regions arranged in lattice fashion, each of which corresponds to a memory array including a plurality of main word lines extending in a first direction, a plurality of sets of sub - word lines extending in said first direction, a plurality pair of data lines extending in a second direction perpendicular to said first direction and a plurality of memory cells, each of which is coupled to a corresponding one of said plurality of sub - word lines and a corresponding one of said data lines, one of said plurality of main word lines being allotted to one of said plurality of sets of sub - word lines;        a plurality of second regions, each of which is arranged alternately with each of said first regions arranged along said second direction and each of which includes sub - word line drivers connected to said sub - word data lines;        a plurality of third regions, each of which is arranged alternately with each of said first regions arranged along said second direction and each of which includes sense amplifiers connected to said data lines; and        a plurality of fourth regions, each of which is arranged alternately with each of said third regions arranged along said first direction,        wherein each of said plurality of main word lines extends through one or more of said first regions arranged along said first direction,        wherein said semiconductor memory further includes:      a plurality of sub - common data lines, each of which extends in said first direction through said third regions arranged along said first direction;        first switching circuits connected interposingly between said plurality of data lines and said sub - common data lines;        a plurality of main - common data lines, each of which extends in said second direction through one or more of second regions arranged along said second direction; and        second switching circuits connected interposingly between said main - common data lines and said sub - common data lines.        
     
     
       11. The semiconductor memory according to  claim 10 ,
   wherein the number of memory arrays being allotted to one of main word - lines is greater than the number of memory arrays being allotted to one of said sub - common data lines.      
     
     
       12. The semiconductor memory according to  claim 10 ,
   wherein the length of said each main word - line is longer than the length of said sub - common data line,        wherein said third region includes first sub - word line drivers coupled to said first sub - word lines and second sub - word line drivers coupled to said second sub - word lines.      
     
     
       13. A semiconductor memory comprising:
   a first region extending in a first direction;        a second region extending in said first direction and in parallel with said first region;        a third region extending in a second direction perpendicular to said first direction;        a fourth region formed as a rectangle, two sides of which are contiguous to said first region and said third region, respectively; and        a fifth region formed as a rectangle, three sides of which are contiguous to said first region, said second region and said third region, respectively,        wherein said third region includes main common data lines extending in said second direction,        wherein said fourth region includes a first memory array having a plurality of first main word lines extending in said first direction, a plurality of sets of first sub - word lines extending in said first direction, a plurality of first data lines extending in said second direction and a plurality of first dynamic memory cells, each of which is coupled to a corresponding one of said plurality of first sub - word lines, each of said sets of first sub - word lines corresponding to one of said plurality of first main word lines,        wherein said fifth region includes a second memory array having a plurality of second main word lines extending in said first direction, a plurality of sets of second sub - word lines extending in said first direction, a plurality of second data lines extending in said second direction and a plurality of second dynamic memory cells, each of which is coupled to a corresponding one of said plurality of second sub - word lines, each of said sets of second sub - word lines corresponding to one of said plurality of second main word lines,        wherein said first region includes:    (   1   )  a pair of first sub - common data lines extending in said first direction,      (   2   )  first sense amplifiers connected to said plurality of first data lines and      (   3   )  first switching circuits connected interposingly between said plurality of first data lines and said plurality of first sub - common data lines,          wherein said second region includes:    (   1   )  a plurality of second sub - common data lines extending in said first direction,      (   2   )  second sense amplifiers connected to said plurality of second data lines, and      (   3   )  second switching circuits connected interposingly between said plurality of second data lines and said plurality of second sub - common data lines,          wherein said first region and said third region intersect in a first crossing area including:    (   1   )  a third switching circuit connected interposingly between said plurality of first sub - common data lines and said plurality of main common data lines,      (   2   )  a fourth switching circuit which provides said first sense amplifiers with a first positive power supply voltage, and      (   3   )  a fifth switching circuit which provides said first sense amplifiers with a second positive power supply voltage lower than said first positive power supply voltage, and          wherein said second region and said third region intersect in a second crossing area including:    (   1   )  a sixth switching circuit connected interposingly between said plurality of second sub - common data lines and said pair of main common data lines,      (   2   )  a seventh switching circuit which provides said second sense amplifiers with said first positive power supply voltage, and      (   3   )  an eighth switching circuit which provides said second sense amplifiers with said second positive power supply voltage.        
     
     
       14. A semiconductor memory according to  claim 13 ,
   wherein said third region includes first sub - word line drivers coupled to said first sub - word lines and second sub - word line drivers coupled to said second sub - word lines.      
     
     
       15. The semiconductor memory according to  claim 13 ,
   wherein each of said first and second sense amplifiers includes a pair of PMOS transistors and a pair of NMOS transistors, each of said pairs of PMOS and NMOS transistors having sources coupled in common, drains coupled to corresponding data lines and gates cross - coupled to said drains,        wherein said each of said first and second sense amplifiers provides corresponding data lines with signals having a high side voltage and a low side voltage on the basis of information of corresponding one of said dynamic memory cells,        wherein, in a first period, said first and second sense amplifiers are driven by said first positive power supply voltage, and        wherein, in a second period following said first period, said first and second sense amplifiers are driven by said second positive power supply voltage.      
     
     
       16. A semiconductor memory comprising:
   a first region extending in a first direction;        a second region extending in said first direction and in parallel with said first region;        a third region extending in a second direction perpendicular to said first direction;        a fourth region formed as a rectangle, two sides of which are contiguous to said first region and said third region, respectively; and        a fifth region formed as a rectangle, three sides of which are contiguous to said first region, said second region and said third region, respectively,        wherein said third region includes a plurality of main common data lines extending in said second direction,        wherein said fourth region includes a first memory array having a plurality of first main word lines extending in said first direction, a plurality of sets of first sub - word lines extending in said first direction, a plurality of first data lines extending in said second direction and a plurality of first dynamic memory cells, each of which is coupled to a corresponding one of said plurality of first sub - word lines, each of said sets of first sub - word lines corresponding to one of said plurality of first main word lines,        wherein said fifth region includes a second memory array having a plurality of second main word lines extending in said first direction, a plurality of sets of second sub - word lines extending in said first direction, a plurality of second data lines extending in said second direction and a plurality of second dynamic memory cells, each of which is coupled to a corresponding one of said plurality of second sub - word lines, each of said sets of second sub - word lines corresponding to one of said plurality of second main word lines,        wherein said first region includes:    (   1   )  a plurality of first sub - common data lines extending in said first direction,      (   2   )  first sense amplifiers connected to said plurality of first data lines and      (   3   )  first switching circuits connected interposingly between said plurality of first data lines and said first sub - common data lines,          wherein said second region includes:    (   1   )  a plurality of second sub - common data lines extending in said first direction,      (   2   )  second sense amplifiers connected to said plurality of second data lines, and      (   3   )  second switching circuits connected interposingly between said plurality of second data lines and said second sub - common data lines,          wherein said first region and said third region intersect in a first crossing area including a third switching circuit connected interposingly between said first sub - common data lines and said main common data lines,        wherein said second region and said third region intersect in a second crossing area including a fourth switching circuit connected interposingly between said second sub - common data lines and said main common data lines, and        wherein each of said first and second sub - word line drivers includes:    (   1   )  a first PMOS transistor having a gate connected to corresponding one of said main word lines, a drain connected to corresponding one of said sub - word lines and a source receiving a first signal,      (   2   )  a first NMOS transistor having a gate connected to the gate of said first PMOS transistor, a drain connected to the drain of said first PMOS transistor and a source connected to a ground potential, and      (   3   )  a second NMOS transistor having a drain connected to the drain of said first NMOS transistor, a source connected to said ground potential and a gate receiving a second signal, said first and second signals being complementary signals.        
     
     
       17. The semiconductor memory according to  claim 16 , wherein said semiconductor memory is formed on a P- type substrate comprising:    (   1   )  a first N - well,      (   2   )  a second N - well formed in said first N - well, and      (   3   )  a first P - well formed in said first N - well, and      (   4   )  a second P - well formed in said first N - well,        wherein the source and the drain of said first PMOS are in said second N - well,        wherein the source and the drain of said first NMOS are in said first P - well, and        wherein the source and the drain of a switching NMOS transistor, forming one of said dynamic memory cells, are in said second P - well.      
     
     
       18. The semiconductor memory according to  claim 17 ,
   wherein said first N - well is supplied with a voltage corresponding to a high level of said first signal, and        wherein said P - type substrate is supplied with said ground potential.      
     
     
       19. A semiconductor memory comprising:
   a plurality of word lines layered by main word lines and sub - word lines; and        a plurality of I/O lines layered by data lines connected to memory cells, sub - common data lines connected to said data lines and main - common data lines connected to said sub - common data lines,        wherein said main word lines, sub - word lines and sub - common data lines extend in a first direction, and        wherein said data lines and main - common data lines extend in a second direction perpendicular to said first direction.