Surface acoustic wave arrangement with a junction region between surface acoustic wave structures having a decreasing then increasing finger period

Abstract

In order to reduce scattering losses during the transmission of a surface acoustic wave signal, a surface acoustic wave arrangement has a junction between two mutually offset surface acoustic wave structures designed so that the finger period is reduced in the region of the junction, and varies continuously in the region of the junction.

1. A surface acoustic wave arrangement comprising a piezoelectric substrate; at least two surface acoustic wave structures being fitted on the substrate, said structures being arranged one behind the other in a propagation direction of the surface acoustic waves and having metallic fingers with a first and second finger period, said two surface acoustic wave structures having differences selected from different phase, different finger period, and a combination of different phase and different finger period; fingers at the ends of the two surface acoustic wave structures forming a junction region from a first of the two surface acoustic wave structures to a second of the two surface acoustic wave structures, the local finger period of the first surface acoustic wave structure initially decreasing continuously in the junction region and finally rising continuously again until the finger period of the second surface acoustic wave structure is reached. 
     
     
       2. A surface acoustic wave arrangement according to  claim 1 , wherein the junction region is formed by 5 to 10 fingers and the ends of the two surface acoustic wave structures. 
     
     
       3. A surface acoustic wave arrangement according to  claim 1 , wherein at least one of the two surface acoustic wave structures is in the form of an interdigital transducer. 
     
     
       4. A surface acoustic wave arrangement according to  claim 3 , wherein a second surface acoustic wave structure is in the form of a reflector. 
     
     
       5. A surface acoustic wave arrangement according to  claim 1 , wherein the two surface acoustic wave structures are in the form of reflectors. 
     
     
       6. A surface acoustic wave arrangement according to  claim 1 , wherein the width of the fingers of the surface acoustic wave structure initially decreases and then increases again in the junction region. 
     
     
       7. A surface acoustic wave arrangement according to  claim 1 , wherein the surface acoustic structure has a metallization ratio η of 0.7 to 0.8. 
     
     
       8. A surface acoustic wave arrangement according to  claim 1 , wherein the arrangement is in the form of a dual mode surface acoustic wave filter with interdigital transducers which are used as input and output transducers being arranged between two reflectors in one acoustic track, the surface acoustic wave structures being selected from interdigital transducers and reflectors. 
     
     
       9. A surface acoustic wave arrangement according to  claim 8 , wherein the reflectors are connected to ground. 
     
     
       10. A surface acoustic wave arrangement according to  claim 8 , wherein a metallization height of the surface acoustic wave structures is in a range of 9 to 11% of the wavelength of the surface acoustic wave structures. 
     
     
       11. A surface acoustic wave arrangement according to  claim 1 , wherein the substrate is selected from a 42° rot YX—LiTaO 3  substrate and a 36° rot YX—LiTaO 3  substrate. 
     
     
       12. A surface acoustic wave arrangement according to  claim 11 , which includes three interdigital transducers which are arranged one behind the other between two reflectors with the central interdigital transducer being connected to a first connection and having a total of 27 to 35 electrode fingers and the two outer interdigital transducers being connected to a second connection and having a total of 20 to 24 electrode fingers. 
     
     
       13. A surface acoustic wave arrangement according to  claim 12 , wherein a distance between the central interdigital transducer and the two outer interdigital transducers are of different magnitude. 
     
     
       14. A surface acoustic wave arrangement according to  claim 1 , which is in the form of a two-track arrangement, each track having at least one reflector, with the finger periods of the reflectors and  in the two tracks being of different magnitude. 
     
     
       15. A surface acoustic wave arrangement according to  claim 1 , which is in the form of a reactance filter with single-port resonators with a junction between the different finger periods of the interdigital transducer and a reflector in at least one single-port resonator. 
     
     
       16. A surface acoustic wave arrangement comprising a piezoelectric substrate; at least two surface acoustic wave structures being fitted on the substrate, said structures being arranged one behind the other in a propagation direction of the surface acoustic waves and having metallic fingers with a first and second finger period, said two surface acoustic wave structures having differences selected from different phase, different finger period, and a combination of different phase and different finger period; fingers at the ends of the two surface acoustic wave structures forming a junction region from a first of the two surface acoustic wave structures to a second of the two surface acoustic wave structures, the junction region having a finger period less than the finger period of the adjacent surface acoustic wave structures. 
     
     
       17. A surface acoustic wave arrangement according to  claim 16 , wherein the junction region is formed by  5  to  10  fingers and the ends of the two surface acoustic wave structures. 
     
     
       18. A surface acoustic wave arrangement according to  claim 16 , wherein at least one of the two surface acoustic wave structures is in the form of an interdigital transducer. 
     
     
       19. A surface acoustic wave arrangement according to  claim 18 , wherein a second surface acoustic wave structure is in the form of a reflector. 
     
     
       20. A surface acoustic wave arrangement according to  claim 16 , wherein the two surface acoustic wave structures are in the form of reflectors. 
     
     
       21. A surface acoustic wave arrangement according to  claim 16 , wherein the width of the fingers of the surface acoustic wave structure initially decreases and then increases again in the junction region. 
     
     
       22. A surface acoustic wave arrangement according to  claim 16 , wherein the surface acoustic structure has a metallization ratio η of  0 . 7  to  0 . 8 . 
     
     
       23. A surface acoustic wave arrangement according to  claim 16 , wherein the arrangement is in the form of a dual mode surface acoustic wave filter with interdigital transducers which are used as input and output transducers being arranged between two reflectors in one acoustic track, the surface acoustic wave structures being selected from interdigital transducers and reflectors. 
     
     
       24. A surface acoustic wave arrangement according to  claim 23 , wherein the reflectors are connected to ground. 
     
     
       25. A surface acoustic wave arrangement according to  claim 23 , wherein a metallization height of the surface acoustic wave structures is in a range of  9  to  11 %  of the wavelength of the surface acoustic wave structures.   
     
     
       26. A surface acoustic wave arrangement according to  claim 16 , wherein the substrate is selected from a  42 ° rot YX—LiTaO 3    substrate and a  36 ° rot YX—LiTaO   3    substrate.   
     
     
       27. A surface acoustic wave arrangement according to  claim 16 , which includes three interdigital transducers which are arranged one behind the other between two reflectors with the central interdigital transducer being connected to a first connection and having a total of  27  to  35  electrode fingers and the two outer interdigital transducers being connected to a second connection and having a total of  20  to  24  electrode fingers. 
     
     
       28. A surface acoustic wave arrangement according to  claim 27 , wherein a distance between the central interdigital transducer and the two outer interdigital transducers are of different magnitude. 
     
     
       29. A surface acoustic wave arrangement according to  claim 16 , which is in the form of a two- track arrangement, each track having at least one reflector, with the finger periods of the reflectors in the two tracks being of different magnitude.   
     
     
       30. A surface acoustic wave arrangement according to  claim 16 , which is in the form of a reactance filter with single- port resonators with a junction between the different finger periods of the interdigital transducer and a reflector in at least one single - port resonator.