USRE39640EExpiredUtilityPatentIndex 48
Conductive isostructural compounds
Est. expiryOct 13, 2018(expired)· nominal 20-yr term from priority
C04B 2235/761C30B 29/46C04B 35/547H10D 62/80H10F 77/12H10N 10/852H10N 10/853C30B 11/00
48
PatentIndex Score
1
Cited by
41
References
74
Claims
Abstract
A family of isostructural compounds have been prepared having the general formula A n Pb m Bi n O 2n+m . These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.
Claims
exact text as granted — not AI-modified1. A conductive material having the general formula A n M m M′ n Q 2n+m wherein:
A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and TI;
M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal;
M′ is at least one element selected from the group consisting of Bi and Sb;
Q is at least one element selected from the group consisting of Se, Te and S; and
n and m are any number greater than 0.
2. The conductive material of claim 1 wherein n and m are integers.
3. The conductive material of claim 1 wherein the material possesses an NaCl-type cubic lattice structure.
4. The conductive material of claim 1 wherein A is K, M is Pb and M′ is Bi.
5. The conductive material of claim 1 wherein A is K, M is Sn and M′ is Bi.
6. A semiconductor device comprising the conductive material of claim 1 .
7. An infrared detector comprising the conductive material of claim 1 .
8. A photovoltaic element comprising the conductive material of claim 1 .
9. A multispectral sensor comprising the conductive material of claim 1 .
10. A thermoelectric device comprising the conductive material of claim 1 .
11. A solid solution comprising a conductive material having the general formula A n M m M′ m Q 2n+m wherein:
A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and TI;
M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal;
M′ is at least one element selected from the group consisting of Bi and Sb;
Q is at least one element selected from the group consisting of Se, Te and S; and
n and m are any number greater than 0.
12. The solid solution of claim 11 wherein Q is at least two elements selected from the group consisting of Se, Te and S.
13. The solid solution of claim 11 wherein M′ is Bi and Sb.
14. The solid solution of claim 11 wherein M is at least two elements selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal.
15. The solid solution of claim 11 wherein the solid solution possesses a NaCl-type cubic lattice crystal structure.
16. A semiconductor device comprising the solid solution of claim 11 .
17. An infrared detector comprising the solid solution of claim 11 .
18. A photovoltaic element comprising the solid solution of claim 11 .
19. A thermoelectric device comprising the solid solution of claim 11 .
20. A P-type conductive material comprising:
(a) a conductive material having the general formula A n M m M′ n Q 2n+m wherein:
A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and TI;
M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal;
M′ is at least one element selected from the group consisting of Bi and Sb;
Q is at least one element selected from the group consisting of Se, Te, and S; and
n and m are any number greater than 0; and
(b) a dopant.
21. The P-type conductive material of claim 20 , wherein the dopant is selected from the group consisting of Ge, Sn, Pb, Al, Ga, In, Ti and mixtures thereof.
22. An N-type conductive material comprising:
(a) a conductive material having the general formula A n M m M′ n Q 2n+m wherein:
A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, and TI;
M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal;
M′ is at least one element selected from the group consisting of Bi and Sb;
Q is at least one element selected from the group consisting of Se, Te, and S; and
n and m are any number greater than 0; and
(b) a dopant.
23. The N-type conductive material of claim 22 wherein the dopant of a SbX 3 , wherein X is a halide.
24. The N-type conductive material of claim 22 wherein the dopant is BiX 3 , wherein X is a halide.
25. The N-type conductive material of claim 22 wherein the dopant is Hg 2 Cl 2 .
26. The N-type conductive material of claim 22 wherein the dopant is DX 2 where:
D is at least one element selected from the group consisting of Cr, Mn, Fe, Co, Ni, Cu, Zn and Mg; and
X is at least one element selected from the group consisting of Cl, Br and I.
27. The N-type conductive material of claim 22 wherein the amount of dopant is from 0.0001% to 4% by weight.
28. A thermoelectric device comprising the N-type conductive material of claim 22 .
29. A semiconductor device comprising the N-type conductive material of claim 22 .
30. A solid solution comprising a conductive material having the general formula A n M m M′ n Q 2n+m wherein:
A is at least two elements selected from the group consisting of Li, Na, K, Rb, Cs, TI, and Ag;
M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal;
M′ is at least one element selected from the group consisting of Bi and Sb;
Q is at least one element selected from the group consisting of Se, Te, and S; and
n and m are any number greater than 0 0<n≦1 and m≧10 .
31. The solid solution of claim 30 wherein Q is at least two elements selected from the group consisting of Se, Te and S.
32. The solid solution of claim 30 wherein M′ is Bi and Sb.
33. The solid solution of claim 30 wherein M is at least two elements selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal.
34. A semiconductor device comprising the solid solution of claim 30 .
35. An infrared detector comprising the solid solution of claim 30 .
36. A photovoltaic element comprising the solid solution of claim 30 .
37. A thermoelectric device comprising the solid solution of claim 30 .
38. A conductive material having the general formula A n M m M′ n Q 2n+m wherein:
A is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, TI, and Ag;
M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and any divalent transition metal;
M′ is at least one element selected from the group consisting of Bi and Sb;
Q is at least one element selected from the group consisting of Se, Te, and S; and
n and m are integers greater than 0 0<n≦1 and m≧10 .
39. The conductive material of claim 38 wherein A is Ag, M is Pb and M′ is Bi.
40. A semiconductor device comprising the conductive material of claim 38 .
41. An infrared detector comprising the conductive material of claim 38 .
42. A photovoltaic element comprising the conductive material of claim 38 .
43. A multispectral sensor comprising the conductive material of claim 38 .
44. A thermoelectric device comprising the conductive material of claim 38 .
45. A solid solution according to claim 30 , wherein 10 ≦m≦ 20 .
46. A solid solution according to claim 45 , wherein n= 1 .
47. A solid solution according to claim 30 , wherein A comprises Ag.
48. A solid solution according to claim 47 , wherein M is Pb, M′ is Sb, Q is Te, and n= 1 .
49. A solid solution according to claim 30 , additionally comprising an N- type or P - type dopant.
50. A conductive material according to claim 38 , wherein n= 1 .
51. A conductive material to claim 38 , wherein A is Ag.
52. A conductive material to claim 51 , wherein M is Pb, M′ is Sb, Q is Te, and n= 1 .
53. A conductive material according to claim 38 , additionally comprising an N- type or P - type dopant.
54. A conductive material having the general formula Ag n M m M′ n Q 2n+m , wherein: ( a ) M is at least one element selected from the group consisting of Pb, Sn, Ge, Ca, Sr, Ba and divalent transition metals; ( b ) M′ is at least one element selected from the group consisting of Bi and Sb; ( c ) Q is at least one element selected from the group consisting of Se, Te and S; and ( d ) n> 0 and m≧ 10 .
55. A conductive material according to claim 54 , wherein n≧ 1 .
56. A conductive material according to claim 54 , wherein m≦ 20 .
57. A conductive material according to claim 56 , wherein n= 1 .
58. A conductive material according to claim 54 , wherein M is Pb, M′ is Sb, and Q is Te.
59. A conductive material according to claim 58 , wherein n= 1 .
60. A conductive material according to claim 54 , additionally comprising an N- type or P - type dopant.
61. A semiconductor device comprising the conductive material of claim 54 .
62. An infrared detector comprising the conductive material of claim 54 .
63. A photovoltaic element comprising the conductive material of claim 54 .
64. A thermoelectric device comprising the conductive material of claim 54 .
65. An N- type conductive material comprising an N - type dopant and a conductive material having the general formula Ag n M m M′ n Q 2n+m , wherein: ( a ) M is at least one element selected from the group consisting of Pb, Sn, Ca, Sr, Ba and divalent transition metals; ( b ) M′ is at least one element selected from the group consisting of Bi and Sb; ( c ) Q is at least one element selected from the group consisting of Se, Te and S; and ( d ) 0 <n≦ 1 and m≧ 10 .
66. A conductive material according to claim 65 , wherein n≧ 1 .
67. A solid solution according to claim 65 , wherein m≦ 20 .
68. A conductive material according to claim 67 , wherein n= 1 .
69. A conductive material according to claim 65 , wherein M is Pb, M′ is Sb, and Q is Te.
70. A conductive material according to claim 69 , wherein n= 1 .
71. A semiconductor device comprising the conductive material of claim 65 .
72. An infrared detector comprising the conductive material of claim 65 .
73. A photovoltaic element comprising the conductive material of claim 65 .
74. A thermoelectric device comprising the conductive material of claim 65 .Cited by (0)
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