Electron beam apparatus and image forming apparatus

Abstract

An electron beam apparatus includes an electron source having an electron-emitting device, an electrode for controlling an electron beam emitted from the electron source, a target to be irradiated with an electron beam emitted from the electron source and a spacer arranged between the electron source and the electrode. The spacer has a semiconductor film on the surface thereof that is electrically connected to the electron source and the electrode.

1. An electron beam apparatus comprising:
 a vacuum envelope containing a plurality of electron-emitting devices wired by a plurality of row-directed wires and a plurality of column-directed wires to form a matrix wiring structure; and  
 a plate-shaped spacer capable of forming an electrical connection between a plurality of wires if arranged in electrical contact with the plurality of wires, said spacer being in electrical contact with only one wire of said row-directed or column-directed wires, wherein  
 said row-directed wires are laminated over said column-directed wires and said spacer is in electrical contact with one of said row-directed wires, or wherein said column-directed wires are laminated over said row-directed wires and said spacer is in electrical contact with one of said column-directed wires.  
 
     
     
       2. An electron beam apparatus according to  claim 1 , wherein said plate-shaped spacer is rectangularly parallelepiped in such a way that the longitudinal direction thereof is in parallel with one of said row-directed or column-directed wires with which said spacer is in electrical contact. 
     
     
       3. An electron beam apparatus according to  claim 1 , wherein said spacer has a semiconductor film on its surface. 
     
     
       4. An electron beam apparatus according to  claim 1 , wherein said apparatus further comprises a target arranged to be irradiated with an electron beam emitted from said electron-emitting devices. 
     
     
       5. An electron beam apparatus according to  claim 1 , wherein said spacer is in electrical-contact with another electrode in addition to one of said row-directed or column-directed wires. 
     
     
       6. An electron beam apparatus according to  claim 5 , wherein different electric potentials are applied to said another electrode and said one of said row-directed or column-directed wires. 
     
     
       7. An electron beam apparatus according to  claim 1 , wherein said spacer is located on the wire with which said spacer is in electrical contact. 
     
     
       8. An electron beam apparatus according to  claim 6 , wherein said spacer is located on the wire with which said spacer is in electrical contact. 
     
     
       9. An electron beam apparatus comprising:
   a vacuum envelope containing a plurality of electron - emitting devices wired by a plurality of row - directed wires and a plurality of column - directed wires to form a matrix wiring structure; and        a spacer capable of forming an electrical connection between a plurality of wires if arranged in electrical contact with the plurality of wires, said spacer being in electrical contact with only one wire of said row - directed or column - directed wires, wherein        said row - directed wires are laminated over said column - directed wires and said spacer is in electrical contact with one of said row - directed wires, or wherein said column - directed wires are laminated over said row - directed wires and said spacer is in electrical contact with one of said column - directed wires.     
     
     
       10. An electron beam apparatus comprising:
   an electron source having a plurality of wirings comprised of row - directed wires and column - directed wires and a plurality of electron - emitting devices connected to said plurality of wirings;        an electrode for controlling electrons emitted from said electron source;        a target irradiated with electrons emitted from said electron source; and        a spacer arranged between said electron source and said electrode,        wherein said spacer contacts only one of said wirings and contacts said electrode to make an electrical connection between said one wiring and said electrode, and        said row - directed wires are laminated over said column - directed wires and said spacer is in electrical contact with one of said row - directed wires, or wherein said column - directed wires are laminated over said row - directed wires and said spacer is in electrical contact with one of said column - directed wires.     
     
     
       11. The electron beam apparatus according to  claim 10 , wherein said spacer is column- shaped.   
     
     
       12. The electron beam apparatus according to  claim 10 , wherein said spacer comprises an insulating member and a semi- conductive film coating said insulating member.   
     
     
       13. The electron beam apparatus according to  claim 10 , wherein said spacer has a conductive film at its surface contacting said electron source and said electrode. 
     
     
       14. The electron beam apparatus according to  claim 10 , wherein said spacer is rectangular in shape and disposed between said one wiring and said electrode so that a longitudinal direction of said spacer is parallel to said wiring. 
     
     
       15. The electron beam apparatus according to  claim 10 , wherein said electrode is disposed on said target. 
     
     
       16. The electron beam apparatus according to  claim 10 , wherein
   said plurality of electron - emitting devices are arranged in a matrix and connected to row and column wirings of said wirings, and        said spacer is disposed between and contacts said wirings and said electrodes.     
     
     
       17. The electron beam apparatus according to  claim 10 , wherein said electrode accelerates the electrons emitted from said electron source. 
     
     
       18. The electron beam apparatus according to  claim 10 , wherein said spacer has a sheet resistance of  10   5 -   10     12    Ω/square.   
     
     
       19. The electron beam apparatus according to  claim 10 , wherein said electron- emitting device is a cold cathode device.   
     
     
       20. The electron beam apparatus according to  claim 10 , wherein said electron- emitting device comprises a pair of electrodes and an electroconductive film including an electron emitting area.   
     
     
       21. The electron beam apparatus according to  claim 10 , wherein said electron- emitting device is a surface conduction electron - emitting device.   
     
     
       22. The electron beam apparatus according to  claim 10 , wherein an image is formed by irradiating said target with electrons emitted from said electron source according to an input signal. 
     
     
       23. The electron beam apparatus according to  claim 10 , wherein said target is a fluorescent member.