Electronic semiconductor power device with integrated diode

Abstract

A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a first electrode in contact with the first termination region, and a second electrode shaped in the form of a frame close to the edge of the chip and connected to a third electrode in contact with the bottom of the chip. A fourth electrode made in one piece with the first electrode is in contact with the first region. The termination structure also comprises a fifth electrode in contact with the epitaxial layer along a path parallel to the edge of the first termination region and connected to the second electrode and a second P type termination region that surrounds the fifth electrode and a sixth electrode, and which is in contact with the second termination region, connected to the first electrode.

1. An electronic device formed on a chip of semiconductor material comprising:
 a substrate having a first type of conductivity and a plurality of surfaces, one of whose surfaces is a bottom surface of the chip,  
 a layer having a second type of conductivity formed on the substrate and having a surface which is a top surface of the chip,  
 at least one first region having the first type of conductivity,  that extends into the layer from the top surface,  
 a termination structure comprising: 
 a first termination region having the first type of conductivity,  that extends into the layer from the top surface and is shaped in such a way that it surrounds the at least one first region,  
 a first electrode in contact with the first termination region,  
 a second electrode in contact with the layer on the top surface,  and shaped in the form of a frame close to the edge of the chip,  
 a third electrode in contact with the bottom surface of the chip and connected electrically to the second electrode,  
 a second termination region having the first type of conductivity, which extends into the layer from the top surface, and shaped in the form of a frame surrounding the fifth electrode, 
 a fourth electrode in contact with the at least one first region and connected electrically to the first electrode, and  
 a fifth electrode in contact with the layer on the top surface along a path that extends substantially parallel to at least part of an edge of the first termination region and connected electrically to the second electrode, and  
   a second termination region having the first type of conductivity, which extends into the layer from the top surface, and shaped in the form of a frame surrounding the fifth electrode.    
 
 
     
     
       2. The device of  claim 1  wherein the each of the first and the second termination regions comprises a low-concentration surface part and a high-concentration deep part. 
     
     
       3. The device of  claim 2  wherein the low-concentration surface parts of the first and the second termination regions are combined in a single region and wherein the termination structure comprises a region having the second type of conductivity at high concentration that extends into the surface parts common to the first and the second termination regions from the portion of the front surface of the chip with which the fifth electrode is in contact. 
     
     
       4. The device of  claim 1  wherein the first and the fourth electrodes comprise a single metallic element. 
     
     
       5. The device of  claim 1  in which the path along which the fifth electrode extends is shaped in the form of a frame that encloses the at least one first region. 
     
     
       6. The device of  claim 4  wherein the metallic element and the fifth electrode are interdigitated. 
     
     
       7. The device of  claim 1  wherein the chip of semiconductor material comprises a buried layer containing doping species that reduce the lifetime of the charge carriers. 
     
     
       8. The device of  claim 7  wherein the doping species comprise helium atoms. 
     
     
       9. The device of  claim 1 , further comprising a sixth electrode in contact with the second termination region and connected electrically to the first electrode. 
     
     
       10. An electronic circuit formed on a chip of semiconductor material having a substrate and an epitaxial layer, the circuit comprising:
   a diffused region extending in the epitaxial layer; and        a termination structure comprising a first termination region formed in the epitaxial layer and configured to surround the diffused region, a first electrode in contact with the first termination region, and a frame electrode shaped in the form of a frame close to an edge of the chip and in contact with the epitaxial layer, a further electrode coupled between the epitaxial layer and the frame electrode, a second termination region formed in the epitaxial layer and surrounding the further electrode, and a surface contact electrode coupled between the second termination region and the first electrode.     
     
     
       11. The circuit of  claim 10  wherein the first and second termination regions each comprise a low- concentration surface part and a high - concentration deep part.   
     
     
       12. An IGBT device having a substrate of first conductivity with an epitaxial layer of second conductivity formed thereon, comprising:
   first and second termination regions formed in the epitaxial layer and surrounding a diffused region, a first electrode in contact with the first termination region, a surface contact electrode in contact with the second termination region and the first electrode, a second electrode shaped in the form of a frame close to an edge of the substrate, and a further electrode in contact with the epitaxial layer and the second electrode, the second termination region surrounding the further electrode.     
     
     
       13. The device of  claim 12 , wherein the further electrode is in electrical contact with the substrate. 
     
     
       14. An IGBT device, comprising:
   a termination structure formed in an epitaxial layer on a substrate, the termination structure comprising a first termination region formed in the epitaxial layer, a frame electrode formed in the shape of a frame and near an edge of the epitaxial layer, a further electrode in contact with the frame electrode and the epitaxial layer, and a second termination region formed in the epitaxial layer and surrounding the further electrode and electrically coupled to the first termination region.     
     
     
       15. The device of  claim 14 , further comprising a surface contact electrode in contact with the first termination region and the second termination region.