USRE41215EExpiredUtilityPatentIndex 96
Semiconductor device
Est. expiryJul 30, 2021(expired)· nominal 20-yr term from priority
H10K 59/8052H10K 59/80518H10D 86/60H10D 86/481H10D 30/6721H10D 86/40H10D 30/6715G09G 2310/027G09G 3/20G09G 3/3275G09G 2300/08G09G 2310/0218G09G 2310/0267G09G 2310/0275G09G 3/3208H03K 19/01714G09G 2310/0286G09G 2310/0289G09G 3/3648H10K 2102/3026H10K 59/123H10K 50/82H10K 50/818
96
PatentIndex Score
39
Cited by
77
References
48
Claims
Abstract
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor ( 154 ) formed between a gate electrode and an output electrode of a TFT ( 152 ), the electric potential of the gate electrode of the TFT ( 152 ) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor ( 155 ) formed between a gate electrode and an output electrode of a TFT ( 153 ) compensates for increasing the electric potential of the gate electrode of the TFT ( 152 ), and a larger load driving capability is obtained.
Claims
exact text as granted — not AI-modified1. A semiconductor device comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source; third and fourth transistors each comprising an input terminal electrically connected to a second electric power source; a voltage compensator circuit comprising: a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; and a capacitor between the output terminal of the fifth transistor and an output terminal of the first transistor; a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor; a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and a signal output portion, wherein each of the first through the fifth transistors have the same conductivity type, wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected, wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion, wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
2. A semiconductor device comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a voltage compensator circuit comprising: a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and
a signal output portion,
wherein each of the first through the fifth transistors have the same conductivity type,
wherein the output terminal of the first transistor and the output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
3. The semiconductor device according to claim 1 , wherein the capacitor is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and an insulating material between the two electrodes.
4. The semiconductor device according to claim 2 , wherein one of the first and second capacitor means is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
5. The semiconductor device according to claim 1 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
6. The semiconductor device according to claim 2 ,
wherein electric potential of the third electric power source is more than electric potential of the second electric power source and less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the third electric power source is less than the electric potential of the second electric power source and more than the electric potential of the first electric power source when the conductivity type is p-channel.
7. A semiconductor device comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a voltage compensator circuit comprising: a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor; and a capacitor between the gate electrode and an output terminal of the first transistor;
a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
a second signal input portion for inputting a second signal to an input terminal a gate electrode of the fifth transistor; and
a signal output portion,
wherein each of the first through sixth transistors have the same conductivity type,
wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
wherein a gate electrode the input terminal of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
8. A semiconductor device comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a voltage compensator circuit comprising: a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor; a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the first third transistor;
a first signal input portion for inputting a first signal to the gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
a second signal input portion for inputting a second signal to an input terminal a gate electrode of the fifth transistor; and
a signal output portion,
wherein each of the first through the sixth transistors have the same conductivity type,
wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
wherein a gate electrode the input terminal of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
9. The semiconductor device according to claim 7 , wherein the capacitor is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
10. The semiconductor device according to claim 8 , wherein one of the first and second capacitor means is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
11. The semiconductor device according to claim 7 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
12. The semiconductor device according to claim 8 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
13. The semiconductor device according to claim 1 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
14. The semiconductor device according to claim 2 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
15. The semiconductor device according to claim 7 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
16. The semiconductor device according to claim 8 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
17. The semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element.
18. The semiconductor device according to claim 2 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element.
19. The semiconductor device according to claim 7 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element.
20. The semiconductor device according to claim 8 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element.
21. The semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
22. The semiconductor device according to claim 2 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
23. The semiconductor device according to claim 7 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
24. The semiconductor device according to claim 8 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
25. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source; third and fourth transistors each comprising an input terminal electrically connected to a second electric power source; a voltage compensator circuit comprising: a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; and a capacitor between the output terminal of the fifth transistor and an output terminal of the first transistor; a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor; a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and a signal output portion, wherein each of the first through the fifth transistors have the same conductivity type, wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected, wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion, wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
26. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a voltage compensator circuit comprising: a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and
a signal output portion,
wherein each of the first through the fifth transistors have the same conductivity type,
wherein the output terminal of the first transistor and the output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
27. The semiconductor device according to claim 25 , wherein the capacitor is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and an insulating material between the two electrodes.
28. The semiconductor device according to claim 26 , wherein one of the first and second capacitor means is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
29. The semiconductor device according to claim 25 , wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
30. The semiconductor device according to claim 26 ,
wherein electric potential of the third electric power source is more than electric potential of the second electric power source and less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the third electric power source is less than the electric potential of the second electric power source and more than the electric potential of the first electric power source when the conductivity type is p-channel.
31. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a voltage compensator circuit comprising: a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor; and a capacitor between the gate electrode and an output terminal of the first transistor;
a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
a second signal input portion for inputting a second signal to an input terminal a gate electrode of the fifth transistor; and
a signal output portion,
wherein each of the first through the sixth transistors have the same conductivity type,
wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
wherein a gate electrode the input terminal of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
32. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a voltage compensator circuit comprising: a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor; a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the first third transistor;
a first signal input portion for inputting a first signal to the gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
a second signal input portion for inputting a second signal to an input terminal a gate electrode of the fifth transistor; and
a signal output portion,
wherein each of the first through the sixth transistors have the same conductivity type,
wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
wherein a gate electrode the input terminal of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
33. The semiconductor device according to claim 31 , wherein the capacitor is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
34. The semiconductor device according to claim 32 , wherein one of the first and second capacitor means is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
35. The semiconductor device according to claim 31 , wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
36. The semiconductor device according to claim 32 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
37. The semiconductor device according to claim 25 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
38. The semiconductor device according to claim 26 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
39. The semiconductor device according to claim 31 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
40. The semiconductor device according to claim 32 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
41. The semiconductor device according to claim 25 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element.
42. The semiconductor device according to claim 26 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element.
43. The semiconductor device according to claim 31 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element.
44. The semiconductor device according to claim 32 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element.
45. The semiconductor device according to claim 25 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
46. The semiconductor device according to claim 26 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
47. The semiconductor device according to claim 31 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
48. The semiconductor device according to claim 32 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.Cited by (0)
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