Fabrication method for algainnpassb based devices

Abstract

A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is set at less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers. In a method for manufacturing a semiconductor device, Al, Ga, In, N, P, As and Sb as materials are prepared as materials for a semiconductor device, and a plurality of semiconductor layers are epitaxially grown by using said materials, including a layer of a nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 −2 Torr or higher.

1. A method for manufacturing a semiconductor device, comprising the step of:
 epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z  (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10 −2  Torr or higher vacuum.    
     
     
       2. A semiconductor device manufactured by the manufacturing method according to  claim 1 . 
     
     
       3. A method for manufacturing a semiconductor device, comprising the step of:
 epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z  (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) formed using nitrogen radical as nitrogen material, in a vacuum of substantially 10 −2  Torr or higher vacuum,    wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.    
     
     
       4. A manufacturing method according to  claim 3 , wherein in a process for growing at least one of said plurality of semiconductor layers, a stress compensated layer with the stress canceled is formed by alternately depositing layers having compressive strain and layers having tensile strain, and each said layer having tensile strain is said nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z  (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1). 
     
     
       5. A semiconductor device manufactured by the manufacturing method according to  claim 3 . 
     
     
       6. A manufacturing method according to  claim 3 , wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma. 
     
     
       7. A manufacturing method according to  claim 3 , wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate. 
     
     
       8. A manufacturing method according to  claim 7 , wherein said silicon substrate has semiconductor elements formed thereon. 
     
     
       9. A method for manufacturing a semiconductor device, comprising the steps of:
 preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and    epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z  (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 −2  Torr or higher, wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.    
     
     
       10. A method for manufacturing a semiconductor device, comprising the steps of:
 preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and    epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z  (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 −2  Torr or higher, wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.    
     
     
       11. A method for manufacturing a semiconductor device, comprising the steps of:
 preparing Al, Ga, In, N, P, As and Sb as materials for a semiconductor device; and    epitaxially growing a plurality of semiconductor layers by using said materials, including a layer of nitrogen-containing alloy semiconductor Al a Ga b In 1-a-b N x P y As z Sb 1-x-y-z  (0≦a≦1, 0≦b≦1, 0<x<1, 0≦y<1, 0≦z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10 −2  Torr or higher,    wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.    
     
     
       12. A manufacturing method according to  claim 11 , wherein said silicon substrate has semiconductor elements formed thereon. 
     
     
       13. An optical transmitter comprising:
   a semiconductor device manufactured by a manufacturing method comprising the step of:        epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen - containing alloy semiconductor Al   a   Ga   b   In   1-a-b   N   x   P   y   As   z   Sb   1-x-y-z  (   0 ≦a≦ 1 ,  0 ≦b≦ 1 ,  0 <x< 1 ,  0 ≦y< 1 ,  0 ≦z< 1   )  formed using nitrogen radical as nitrogen material, in a vacuum of substantially  10     −2    Torr or lower pressure; and        a node from which a beam generated in said semiconductor device can be emitted to be introduced into an optical fiber.     
     
     
       14. An optical transmitter according to  claim 13 ,
   wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.     
     
     
       15. An optical transmitter according to  claim 14 ,
   wherein, in a process for growing at least one of said plurality of semiconductor layers, a stress compensated layer with the stress canceled is formed by alternately depositing layers having compressive strain and layers having tensile strain, and each said layer having tensile strain is said nitrogen - containing alloy semiconductor Al   a   Ga   b   In   1-a-b   N   x   P   y   As   z   Sb   1-x-y-z  (   0 ≦a≦ 1 ,  0 ≦b≦ 1 ,  0 <x< 1 ,  0 ≦y< 1 ,  0 ≦z< 1   ).   
     
     
       16. An optical transmitter according to  claim 14 ,
   wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.     
     
     
       17. An optical transmitter according to  claim 14 ,
   wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.     
     
     
       18. An optical transmitter according to  claim 17 ,
   wherein said silicon substrate has semiconductor elements formed thereon.     
     
     
       19. An optical transmitter according to  claim 13 ,
   wherein said manufacturing method further comprises the step of:        preparing Al, Ga, In, N, P, As and Sb as materials for said semiconductor device, and        wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.     
     
     
       20. An optical receiver comprising:
   a semiconductor device manufactured by a manufacturing method comprising the step of:        epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen - containing alloy semiconductor Al   a   Ga   b   In   1-a-b   N   x   P   y   As   z   Sb   1-x-y-z  (   0 ≦a≦ 1 ,  0 ≦b≦ 1 ,  0 <x< 1 ,  0 ≦y< 1 ,  0 ≦z< 1   )  formed using nitrogen radical as nitrogen material, in a vacuum of substantially  10     −2    Torr or lower pressure; and        a node at which a beam introduced into an optical fiber can be received to be introduced into said semiconductor device.     
     
     
       21. An optical receiver according to  claim 20 ,
   wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.     
     
     
       22. An optical receiver according to  claim 21 ,
   wherein in a process for growing at least one of said plurality of semiconductor layers, a stress compensated layer with the stress canceled is formed by alternately depositing layers having compressive strain and layers having tensile strain, and each said layer having tensile strain is said nitrogen - containing alloy semiconductor Al   a   Ga   b   In   1-a-b   N   x   P   y   As   z   Sb   1-x-y-z  (   0 ≦a≦ 1 ,  0 ≦b≦ 1 ,  0 <x< 1 ,  0 ≦y< 1 ,  0 ≦z< 1   ).   
     
     
       23. An optical receiver according to  claim 21 ,
   wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.     
     
     
       24. An optical receiver according to  claim 21 ,
   wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.     
     
     
       25. An optical receiver according to  claim 24 ,
   wherein said silicon substrate has semiconductor elements formed thereon.     
     
     
       26. An optical receiver according to  claim 20 ,
   wherein said manufacturing method further comprises the step of:        preparing Al, Ga, In, N, P, As and Sb as materials for said semiconductor device, and        wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.     
     
     
       27. An optical connector comprising:
   an optical transmitter;        an optical receiver; and        an optical fiber coupled to said optical transmitter and said optical receiver,        wherein at least one of said optical transmitter and said optical receiver comprises a semiconductor device manufactured by a manufacturing method comprising the step of:        epitaxially growing a plurality of semiconductor layers by using materials selected from the group consisting of Al, Ga, In, N, P, As and Sb, said plurality of semiconductor layers including a layer of nitrogen - containing alloy semiconductor Al   a   Ga   b   In   1-a-b   N   x   P   y   As   z   Sb   1-x-y-z  (   0 ≦a≦ 1 ,  0 ≦b≦ 1 ,  0 <x< 1 ,  0 ≦y< 1 ,  0 ≦z< 1   )  formed using nitrogen radical as nitrogen material, in a vacuum of substantially  10     −2    Torr or lower pressure,        wherein said optical fiber is provided so that the beam emitted from said optical transmitter can be introduced into said optical fiber and so that the beam introduced into said optical fiber can be guided into said optical receiver.     
     
     
       28. An optical connector according to  claim 27 ,
   wherein, in said epitaxially growing a plurality of semiconductor layers, for at least two semiconductor layers out of said plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is controlled so as to be less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers.     
     
     
       29. An optical connector according to  claim 28 ,
   wherein in a process for growing at least one of said plurality of semiconductor layers, a stress compensated layer with the stress canceled is formed by alternately depositing layers having compressive strain and layers having tensile strain, and each said layer having tensile strain is said nitrogen - containing alloy semiconductor Al   a   Ga   b   In   1-a-b   N   x   P   y   As   z   Sb   1-x-y-z  (   0 ≦a≦ 1 ,  0 ≦b≦ 1 ,  0 <x< 1 ,  0 ≦y< 1 ,  0 ≦z< 1   ).   
     
     
       30. An optical connector according to  claim 28 ,
   wherein said nitrogen radical is nitrogen obtained by activating nitrogen molecules by radio frequency plasma.     
     
     
       31. An optical connector according to  claim 28 ,
   wherein the plurality of semiconductor layers are semiconductor layers stacked on one another on a substrate, the substrate being a silicon substrate.     
     
     
       32. An optical connector according to  claim 27 ,
   wherein said manufacturing method further comprises the step of:        preparing Al, Ga, In, N, P, As and Sb as materials for said semiconductor device, and        wherein as impurity materials for said semiconductor device, C, Be, Si and Sn are used.