Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films

Abstract

Methods for roll-to-roll deposition of optically transparent and high conductivity metallic thin films are disclosed. In general, a method according to the present invention comprises: (1) providing a flexible plastic substrate; (2) depositing a multi-layered conductive metallic film on the flexible plastic substrate by a thin-film deposition technique to form a composite film; and (3) collecting the composite film in continuous rolls. Typically, the thin conductive metallic film is an InCeO—Ag—InCeO film. Typically, the thin-film deposition technique is DC magnetron sputtering. Another aspect of the invention is a composite film produced by a method according to the present invention. Still another aspect of the invention is a composite film comprising InCeO—Ag—InCeO film formed on a flexible plastic substrate, wherein the composite film has a combination of properties including: transmittance of at least 90% throughout the visible region; an electrical resistance of no greater than about 10 Ω/square; a root-mean-square roughness of no greater than about 2.5 nm; and an interlayer adhesion between the InCeO/Ag/InCeO metallic film and the remainder of the composite film that is sufficiently great to survive a 180° peel adhesion test.

1. A method for forming a light-transmissive composite film comprising:
 (a)  providing a flexible plastic substrate;  
 (b)  depositing a multi-layered conductive metallic film having a visible- region light transmittance of at least  80   % continuously on the flexible plastic substrate by a thin-film deposition technique; and  
 (c)  collecting the composite film in continuous rolls, wherein the composite film is light-transmissive in the visible region .  
 
     
     
       2. The method of  claim 1  wherein the thin-film deposition technique is selected from the group consisting of DC magnetron sputtering, ion beam deposition, RF magnetron sputtering, chemical vapor deposition, ion beam enhanced deposition, and laser ablation deposition. 
     
     
       3. The method of  claim 2  wherein the thin-film deposition technique is DC magnetron sputtering. 
     
     
       4. The method of  claim 2  wherein the thin-film deposition technique is ion beam deposition. 
     
     
       5. The method of  claim 2  wherein the thin-film deposition technique is chemical vapor deposition. 
     
     
       6. The method of  claim 2  wherein the thin-film deposition technique is ion beam enhanced deposition. 
     
     
       7. The method of  claim 2  wherein the thin-film deposition technique is laser ablation deposition. 
     
     
       8. The method of  claim 3  wherein the DC magnetron sputtering is performed at a maximum sputter power of from about 300 watts to about 2000 watts. 
     
     
       9. The method of  claim 8  wherein the DC magnetron sputtering is performed at a sputter power sequence of from about 500 watts to about 800 watts, followed by from about 50 watts to about 100 watts, followed by from about 500 watts to about 800 watts. 
     
     
       10. The method of  claim 9  wherein the DC magnetron sputtering is performed at a sputter power sequence of about 600 watts, followed by about 70 watts, followed by about 600 watts. 
     
     
       11. The method of  claim 3  wherein the deposition distance for DC magnetron sputtering is from about 2 inches to about 12 inches. 
     
     
       12. The method of  claim 11  wherein the deposition distance for DC magnetron sputtering is from about 9 inches to about 11 inches. 
     
     
       13. The method of  claim 3  wherein the DC magnetron sputtering is performed in an atmosphere that contains argon, and, optionally, oxygen. 
     
     
       14. The method of  claim 13  wherein the atmosphere contains oxygen in the deposition of InCeO  indium- cerium - oxide  films, and wherein a flow rate of the oxygen is selected to provide the composite film with the visible- region light transmittance of at least  80   %. 
     
     
       15. The method of  claim 14  wherein the flow rate of oxygen is from about 0.2 to about 2.0 standard cubic centimillitor. 
     
     
       16. The method of  claim 15  wherein the flow rate of oxygen is from about 0.2 to about 1.0 standard cubic centimillitor. 
     
     
       17. The method of  claim 16  wherein the flow rate of oxygen is from about 0.2 to about 0.6 standard cubic centimillitor. 
     
     
       18. The method of  claim 14  wherein the flow rate of argon is from about 5.0 to about 20.0 standard cubic centimillitor. 
     
     
       19. The method of  claim 18  wherein the flow rate of argon is about 10.0 standard cubic centimillitor. 
     
     
       20. The method of  claim 3  wherein line speed during deposition is from about 0.6 to about 4 feet/mm. 
     
     
       21. The method of  claim 20  wherein the line speed during deposition is about 0.6 to 1.2 feet/mm. 
     
     
       22. The method of  claim 20  wherein the thin conductive metallic film is an InCeO/Ag/InCeO metallic film and the line speed during deposition is about 0.7 feet/mm during deposition of the InCeO layers and is about 0.8 feet/mm during deposition of the Ag layers. 
     
     
       23. The method of  claim 3  further comprising the step of  purging the surface of the flexible plastic substrate prior to film deposition,  said depositing a multi- layered conductive metallic film  to enhance the adhesion of the film to the substrate, wherein said purging comprises purging a surface of the flexible plastic substrate with an argon and oxygen plasma, an argon plasma, or an argon and nitrogen plasma. 
     
     
       24. The method of  claim 23  wherein the step of purging the surface of the flexible plastic substrate prior to film deposition is performed with a plasma selected from the group consisting of the group of Ar+O.sub.2, Ar, and Ar+N.sub.2. 
     
     
       25. The method of  claim 24  wherein the step of purging the surface of the flexible plastic substrate prior to film deposition is performed with a Ar+O.sub.2 plasma. 
     
     
       26. The method of  claim 1  wherein the thin conductive metallic film is an InCeO/Ag/InCeO film. 
     
     
       27. The method of  claim 26  wherein the thickness of the InCeO layers is from about 30 nm to about 60 nm and the thickness of the Ag layer is from about 7 nm to about 20 nm. 
     
     
       28. The method of  claim 27  wherein the thickness of the InCeO layers is from about 30 nm to about 45 nm and the thickness of the Ag layer is from about 12 nm to about 16 nm. 
     
     
       29. The method of  claim 26  wherein the Ag of the InCeO/Ag/InCeO film is doped with about 1 atom percent of Au and about 0.5 atom percent of Cu to enhance the stability of the silver atoms in the silver layer. 
     
     
       30. The method of  claim 1  wherein the thin conductive metallic film is selected from the group consisting of silver, gold, and their alloys. 
     
     
       31. The method of  claim 1  wherein the flexible plastic substrate is selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polycarbonate (PC), polysulfone, a phenolic resin, an epoxy resin, polyester, polyimide, polyetherester, polyetheramide, cellulose acetate, aliphatic polyurethanes, polyacrylonitrile, polytetrafluoroethylenes, polyvinylidene fluorides, poly(methyl .alpha.-methacrylates) and an aliphatic or cyclic polyolefin. 
     
     
       32. The method of  claim 31  wherein the flexible plastic substrate is a cyclic polyolefin. 
     
     
       33. The method of  claim 32  wherein the cyclic polyolefin is poly(bis(cyclopentadiene)). 
     
     
       34. The method of  claim 33  wherein the flexible plastic substrate is a polyester. 
     
     
       35. The method of  claim 34  wherein the polyester is an aromatic polyester. 
     
     
       36. The method of  claim 31  wherein the flexible plastic substrate is reinforced with a hard coating. 
     
     
       37. The method of  claim 36  wherein the hard coating is an acrylic coating. 
     
     
       38. The method of  claim 37  wherein the hard coating improved the adhesion and smoothness of the InCeO/Ag/InCeO films to the flexible plastic substrate. 
     
     
       39. The method of  claim 1  wherein the method  further comprises a post-deposition  comprising annealing step  the composite film at ambient conditions after said depositing a multi- layered conductive metallic film.    
     
     
       40. The method of claim  38    39  wherein the post-deposition  said annealing step  comprises annealing the composite film at a temperature of between about 75° C. and about 250° C. for from about 0.5 hour to about 2 hours. 
     
     
       41. The method of  claim 39  wherein the post-deposition annealing step comprises annealing the film at a temperature of between about 75.degree. C. and about 145.degree. C. for from about 1.0 hour to about 2 hours. 
     
     
       42. The method of  claim 40  wherein the post-deposition annealing step comprises annealing the film at a temperature of about 140.degree. C. for about 2 hours. 
     
     
       43. The method of  claim 40  wherein the post-deposition annealing step enhances the adhesion and smooth the surface of the InCeO/Ag/InCeO films, and induces the reduction of sheet resistance and the increase of both transmittance and brightness of the films. 
     
     
       44. The method of  claim 1  wherein the composite film has a transmittance of at least about 80%. 
     
     
       45. The method of  claim 42  wherein the composite film has a transmittance of at least about 90%. 
     
     
       46. The method of  claim 42  wherein the composite film has a brightness of at least about 80%. 
     
     
       47. The method of  claim 1  wherein the composite film has an electrical resistance of no greater than about 20 .OMEGA./square. 
     
     
       48. The method of  claim 44  wherein the composite film has an electrical resistance of no greater than about 10 .OMEGA./square. 
     
     
       49. The method of  claim 45  wherein the composite film has an electrical resistance of no greater than about 5 .OMEGA./square. 
     
     
       50. The method of  claim 1  wherein the composite film has a root-mean-square roughness of no greater than about 5 nm. 
     
     
       51. The method of  claim 47  wherein the composite film has a root-mean-square roughness of no greater than about 2.5 nm. 
     
     
       52. The method of  claim 51  further comprising a post-deposition annealing step and wherein the composite film has a root-mean-square roughness of no greater than about 1.5 nm. 
     
     
       53. The method of  claim 1  wherein the composite film is stable to a 500-hour exposure at 60.degree. C. and 90% relative humidity. 
     
     
       54. The method of  claim 1  wherein the composite film has interlayer adhesion sufficiently great to survive a 180.degree. peel adhesion test. 
     
     
       55. The method of  claim 1  wherein the composite film is wet and dry etchable. 
     
     
       56. The method of  claim 1  wherein the composite film includes a hard coating and is laser etchable. 
     
     
       57. The method of  claim 1  wherein the composite film has a brightness L of at least about 80.0%, a red to green shift a of between about 0 and about 7.00 and a blue to yellow shift b of between about 0 and about 7.00. 
     
     
       58. A composite film made by the process of  claim 1 . 
     
     
       59. The composite film of  claim 58  wherein the thin-film deposition technique is selected from the group consisting of DC or RE magnetron sputtering, ion beam deposition, chemical vapor deposition, ion beam enhanced deposition, and laser ablation deposition. 
     
     
       60. The composite film of  claim 59  wherein the thin-film deposition technique is DC magnetron sputtering. 
     
     
       61. The composite film of  claim 59  wherein the thin-film deposition technique is ion beam deposition. 
     
     
       62. The composite film of  claim 59  wherein the thin-film deposition technique is chemical vapor deposition. 
     
     
       63. The composite film of  claim 59  wherein the thin-film deposition technique is ion beam enhanced deposition. 
     
     
       64. The composite film of  claim 59  wherein the thin-film deposition technique is laser ablation deposition. 
     
     
       65. The composite film of  claim 60  wherein the DC magnetron sputtering is performed at a maximum sputter power of from about 300 watts to about 2000 watts. 
     
     
       66. The composite film of  claim 65  wherein the DC magnetron sputtering is performed at a sputter power sequence of from about 500 watts to about 800 watts, followed by from about 50 watts to about 100 watts, followed by from about 500 watts to about 800 watts. 
     
     
       67. The composite film of  claim 66  wherein the DC magnetron sputtering is performed at a sputter power sequence of about 600 watts, followed by about 70 watts, followed by about 600 watts. 
     
     
       68. The composite film of  claim 60  wherein the deposition distance for DC magnetron sputtering is from about 2 inches to about 12 inches. 
     
     
       69. The composite film of  claim 68  wherein the deposition distance for DC magnetron sputtering is from about 9 inches to about 11 inches. 
     
     
       70. The composite film of  claim 58  wherein the DC magnetron sputtering is performed in an atmosphere that contains argon, and optionally, oxygen. 
     
     
       71. The composite film of  claim 70  wherein the atmosphere contains oxygen in the deposition of InCeO films. 
     
     
       72. The composite film of  claim 71  wherein the flow rate of oxygen is from about 0.2 to about 2.0 standard cubic centimillitor. 
     
     
       73. The composite film of  claim 72  wherein the flow rate of oxygen is from about 0.2 to about 1.0 standard cubic centimillitor. 
     
     
       74. The composite film of  claim 73  wherein the flow rate of oxygen is from about 0.2 to about 0.6 standard cubic centimillitor. 
     
     
       75. The composite film of  claim 71  wherein the flow rate of argon is from about 5.0 to about 20.0 standard cubic centimillitor. 
     
     
       76. The composite film of  claim 75  wherein the flow rate of argon is about 10.0 standard cubic centimillitor. 
     
     
       77. The composite film of  claim 58  wherein line speed during deposition is from about 0.6 to about 4 feet/mm. 
     
     
       78. The composite film of  claim 77  wherein the line speed during deposition is about 0.6 to 1.2 feet/mm. 
     
     
       79. The composite film of  claim 78  wherein the thin conductive metallic film is an InCeO/Ag/InCeO metallic film and the line speed during deposition is about 0.7 feet/mm during deposition of the InCeO layers and is about 0.8 feet/mm during deposition of the Ag layers. 
     
     
       80. The composite film of  claim 58  wherein the method further comprises the step of purging the surface of the flexible plastic substrate prior to film deposition. 
     
     
       81. The composite film of  claim 80  wherein the step of purging the surface of the flexible plastic substrate prior to film deposition is performed with a plasma selected from the group consisting of the group of Ar+O.sub.2, Ar, and Ar+N.sub.2. 
     
     
       82. The composite film of  claim 81  wherein the step of purging the surface of the flexible plastic substrate prior to film deposition is performed with a Ar+O.sub.2 plasma. 
     
     
       83. The composite film of  claim 58  wherein the thin  multi- layered  conductive metallic film is an InCeO/Ag/InCeO film  comprises a silverlayer between a first indium- cerium - oxide layer and a second indium - cerium - oxide layer . 
     
     
       84. The composite film of  claim 83  wherein the thickness of the InCeO  first and the second indium- cerium - oxide  layers is  are each from about 10 nm to about 100 nm and the thickness of the Ag  silver layer is from about 7 nm to about 20 nm. 
     
     
       85. The composite film of  claim 84  wherein the thickness of the InCeO  first and the second indium- cerium - oxide  layers is  are each from about 30 nm to about 45 nm and the thickness of the Ag  silver layer is from about 12 nm to about 16 nm. 
     
     
       86. The composite film of  claim 83  wherein the Ag of the InCeO/Ag/InCeO film  silver layer is doped with about 1 atom percent of Au  gold and about 0.5 atom percent of Cu  copper to enhance the stability of the silver atoms in the silver layer. 
     
     
       87. The composite film of  claim 58  wherein at least one layer of the multi- layered  conductive metallic film is selected from the group consisting of silver, gold, and their alloys. 
     
     
       88. The composite film of  claim 58  wherein the flexible plastic substrate is selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PBS), polycarbonate (PC), polysulfone, a phenolic resin, an epoxy resin, polyester, polyimide, polyetherester, polyetheramide, cellulose acetate, aliphatic polyurethanes, polyacrylonitrile, polytetrafluoroethylenes, polyvinylidene fluorides, poly (methyl .alpha.-methacrylates) and an aliphatic or cyclic polyolefin. 
     
     
       89. The composite film of  claim 88  wherein the flexible plastic substrate is a cyclic polyolefin. 
     
     
       90. The composite film of claim  89    88  wherein the cyclic polyolefin  flexible plastic substrate is poly(bis(cyclopentadiene)). 
     
     
       91. The composite film of  claim 90  wherein the flexible plastic substrate is a polyester. 
     
     
       92. The composite film of claim  91    88  wherein the polyester  flexible plastic substrate is an aromatic polyester. 
     
     
       93. The composite film of  claim 88  wherein the flexible plastic substrate is reinforced with  further comprising a hard coating on a surface of the flexible plastic substrate between the flexible plastic substrate and the multi- layered conductive metallic film . 
     
     
       94. The composite film of  claim 93  wherein the hard coating is an acrylic coating. 
     
     
       95. The composite film of  claim 58  wherein the process for producing the composite film further comprises a post-deposition annealing step at ambient conditions. 
     
     
       96. The composite film of  claim 95  wherein the post-deposition annealing step comprises annealing the film at a temperature of between about 75.degree. C. and about 250.degree. C. for from about 0.5 hour to about 2 hours. 
     
     
       97. The composite film of  claim 96  wherein the post-deposition annealing step comprises annealing the film at a temperature of between about 75.degree. C. and about 145.degree. C. for from about 1.0 hour to about 2 hours. 
     
     
       98. The composite film of  claim 97  wherein the post-deposition annealing step comprises annealing the film at a temperature of about 140.degree. C. for about 2 hours. 
     
     
       99. The composite film of  claim 58  wherein the composite film has a visible- region light  transmittance of at least about 80%. 
     
     
       100. The composite film of  claim 99  wherein the composite film has a transmittance of at least about 90%. 
     
     
       101. The composite film of  claim 58  wherein the composite film has an electrical resistance of no greater than about 20 .OMEGA./square. 
     
     
       102. The composite film of  claim 101  wherein the composite film has an electrical resistance of no greater than about 10 .OMEGA./square. 
     
     
       103. The composite film of  claim 102  wherein the composite film has an electrical resistance of no greater than about 5 .OMEGA./square. 
     
     
       104. The composite film of  claim 58  wherein the composite film has a root-mean-square roughness of no greater than about 5 nm. 
     
     
       105. The composite film of  claim 104  wherein the composite film has a root-mean-square roughness of no greater than about 2.5 nm. 
     
     
       106. The composite film of  claim 105  wherein the process for producing the composite film further comprises a post-deposition annealing step and wherein the composite film has a root-mean-square roughness of no greater than about 1.5 nm. 
     
     
       107. The composite film of  claim 58  wherein the composite film is stable to a 500 hour exposure at 60.degree. C. in 90% relative humidity. 
     
     
       108. The composite film of  claim 58  wherein the composite film has interlayer adhesion sufficiently great to survive a 180.degree. peel adhesion test. 
     
     
       109. The composite film of  claim 58  wherein the composite film is wet and dry etchable. 
     
     
       110. The composite film of  claim 58  wherein the composite film includes a hard coating and is laser etchable. 
     
     
       111. The composite film of  claim 58  wherein the composite film has a brightness L of at least about 80.0, a red to green shift a between about 0 and about 7.00, and a blue to yellow shift b between about 0 and about 7.00. 
     
     
       112. A multilayered electrode/substrate structure comprising the composite film of  claim 58 . 
     
     
       113. The multilayered electrode/substrate structure of  claim 112  wherein the multilayered electrode/substrate structure is an OLED. 
     
     
       114. The multilayered electrode/substrate structure of  claim 112  wherein the multilayered electrode/substrate structure is a PLED. 
     
     
       115. The multilayered electrode/substrate structure of  claim 112  wherein the multilayered electrode/substrate structure has surface roughness of less than about 8 nm. 
     
     
       116. The multilayered electrode/substrate structure of  claim 112  wherein the multilayered electrode/substrate structure has a driving voltage of less than about 20 volts. 
     
     
       117. The multilayered electrode/substrate structure of  claim 112  wherein the multilayered electrode/substrate structure includes a conductive material that is  a light-emitting polymer. 
     
     
       118. The multilayered electrode/substrate structure of  claim 117  wherein the light-emitting polymer is selected from the group consisting of poly(p-phenylenevinylene) (PPV), poly(dialkoxyphenylenevinylene) poly(thiophene), poly(fluorene), poly(phenylene), poly(phenylacetylene), poly(aniline), poly(3-alkylthiophene), poly(3-octylthiophene), and poly(N-vinylcarbazole). 
     
     
       119. The multilayered electrode/substrate structure of  claim 118  wherein the light-emitting polymer is poly(p-phenylenevinylene) (PPV). 
     
     
       120. The multilayered electrode/substrate structure of  claim 118  wherein the light-emitting polymer is poly (fluorene). 
     
     
       121. The multilayered electrode/substrate structure of  claim 112  wherein the multilayered electrode/substrate structure includes a conductive material that is  a luminescent organic or organometallic material. 
     
     
       122. The multilayered electrode/substrate structure of  claim 121  wherein the luminescent organic or organometallic material is selected from the group consisting of metal ion salts of 8-hydroxyquinolate, trivalent metal quinolate complexes, trivalent metal bridged quinolate complexes, Schiff base divalent metal complexes, tin (IV) metal complexes, metal acetylacetonate complexes, metal bidentate ligand complexes incorporating an organic ligand selected from the group consisting of 2-picolylketones, 2-quinaldylketones, and 2-(o-phenoxy) pyridine ketones, bisphosphonates, divalent metal maleonitriledithiolate complexes, molecular charge transfer complexes, rare earth mixed chelates, (5-hydroxy) quinoxaline metal complexes, and aluminum tris-quinolates. 
     
     
       123. A  The composite film comprising an InCeO/Ag/InCeO metallic film coated or deposited on a flexible plastic substrate  of  claim 134 , wherein the composite film: (1) has a visible- region light  transmittance of at least 80% in the visible region ; (2) has an electrical resistance of no greater than about 20 Ω/square; (3) has a root-mean-square roughness of no greater than about 5 nm; and (4) has an interlayer adhesion between the InCeO/Ag/InCeO  indium- cerium - oxide/silver/indium - cerium - oxide  metallic film and other elements of the composite film  the flexible plastic substrate that is sufficiently great to survive a 180° C. peel adhesion test. 
     
     
       124. The composite film of  claim 123  wherein the visible- region light  transmittance is at least 90% in the visible region , the electrical resistance is no greater than about 10 Ω/square, and the root-mean-square roughness is no greater than about 2.5 nm. 
     
     
       125. The composite film of claim  123    134  wherein the composite film further comprises a reinforcing  hard coating located between the InCeO/Ag/InCeO  indium- cerium - oxide/silver/indium - cerium - oxide  metallic film and the flexible plastic substrate. 
     
     
       126. The composite film of  claim 125  wherein the reinforcing hard coating is an acrylic coating. 
     
     
       127. The composite film of claim  126    134  wherein the flexible plastic substrate is selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polycarbonate (PC), polysulfone, a phenolic resin, an epoxy resin, polyester, polyimide, polyetherester, polyetheramide, cellulose acetate, aliphatic polyurethanes, polyacrylonitrile, polytetrafluoroethylenes, polyvinylidene fluorides, poly (methyl α-methacrylates) and an aliphatic or cyclic polyolefin. 
     
     
       128. The composite film of  claim 127  wherein the flexible plastic substrate is a cyclic polyolefin. 
     
     
       129. The composite film of  claim 128  wherein the cyclic polyolefin is poly(bis(cyclopentadiene)). 
     
     
       130. The composite film of  claim 127  wherein the flexible plastic substrate is a polyester. 
     
     
       131. The composite film of  claim 130  wherein the polyester is an aromatic polyester. 
     
     
       132. The method of  claim 1 , wherein the composite film has a transmittance of at least 80% in the visible region. 
     
     
       133. The method of  claim 1 , wherein the composite film  multi- layered conductive metallic film  has a visible- region light  transmittance of at least 90% in the visible region . 
     
     
       134. A composite film, comprising:
   a flexible plastic substrate; and        an indium - cerium - oxide/silver/indium - cerium - oxide metallic film on the flexible plastic substrate;        wherein the composite film has a visible - region light transmittance of at least  80   %.   
     
     
       135. The composite film of  claim 134 , further comprising a light emitting material on the metallic film. 
     
     
       136. The composite film of  claim 134 , wherein the silver of the indium- cerium - oxide/silver/indium - cerium - oxide film is doped with about  1  atom percent of gold and about  0 . 5  atom percent of copper to enhance the stability of the silver atoms in the silver layer.   
     
     
       137. The composite film of  claim 134 , wherein the visible- region light transmittance is at least about  90   %. 
     
     
       138. The composite film of  claim 134 , wherein the composite film has an electrical resistance of no greater than about  20  Ω/square. 
     
     
       139. The composite film of  claim 138 , wherein the composite film has an electrical resistance of no greater than about  10  Ω/square. 
     
     
       140. The composite film of  claim 139 , wherein the composite film has an electrical resistance of no greater than about  5  Ω/square. 
     
     
       141. The composite film of  claim 134 , wherein the composite film has a root- mean - square roughness of no greater than about  5  nm.   
     
     
       142. The composite film of  claim 141 , wherein the composite film has a root- mean - square roughness of no greater than about  2 . 5  nm.   
     
     
       143. The composite film of  claim 134 , wherein the composite film is stable to a  500  hour exposure at  60 ° C. in  90 %  relative humidity.   
     
     
       144. The composite film of  claim 134 , wherein the composite film has interlayer adhesion sufficiently great to survive a  180 ° C. peel adhesion test. 
     
     
       145. The composite film of  claim 134 , wherein the composite film has a brightness L of at least about  80 . 0 , a red to green shift a between about  0  and about  7 . 00 , and a blue to yellow shift b between about  0  and about  7 . 00 . 
     
     
       146. A display system, comprising:
   one or more composite films, at least one of the one or more composite films including a flexible plastic substrate and an indium - cerium - oxide/silver/indium - cerium - oxide metallic film on the flexible plastic substrate and having a visible - region light transmittance of at least  80   % ; and        a light emitting material on at least one of the one or more composite films.     
     
     
       147. The system of  claim 146 , wherein the system comprises a selected one of a flat panel display, a touch panel, and a flex circuit. 
     
     
       148. The system of  claim 146 , wherein the system comprises a selected one of an OLED device and a PLED device. 
     
     
       149. The system of  claim 146 , wherein the light- emitting material is selected from the group consisting of poly ( p - phenylenevinylene ) ( PPV ) , poly ( dialkoxyphenylenevinylene ) , poly ( thiophene ) , poly ( fluorene ) , poly ( phenylene ) , poly ( phenylacetylene ) , poly ( aniline ) , poly (   3   - alkylthiophene ) , poly (   3   - octylthiophene ) , and poly ( N - vinylcarbazole ). 
     
     
       150. The system of  claim 149 , wherein the light- emitting material is poly ( p - phenylenevinylene ) ( PPV ). 
     
     
       151. The system of  claim 149 , wherein the light- emitting material is poly ( fluorene ). 
     
     
       152. The system of  claim 146 , wherein the light- emitting material is a selected one of a luminescent organic and an organometallic material.   
     
     
       153. The system of  claim 152 , wherein the luminescent organic or organometallic material is selected from the group consisting of metal ion salts of  8 - hydroxyquinolate, trivalent metal quinolate complexes, trivalent metal bridged quinolate complexes, Schiff base divalent metal complexes, tin  ( IV )  metal complexes, metal acetylacetonate complexes, metal bidentate ligand complexes incorporating an organic ligand selected from the group consisting of  2   - picolylketones,  2   - quinaldylketones, and  2   -( o - phenoxy )  pyridine ketones, bisphosphonates, divalent metal maleonitriledithiolate complexes, molecular charge transfer complexes, rare earth mixed chelates,  (   5   - hydroxy )  quinoxaline metal complexes, and aluminum tris - quinolates.   
     
     
       154. The composite film of  claim 134 , wherein the metallic film comprises a silver layer between a first indium- cerium - oxide layer and a second indium - cerium - oxide layer layer, and wherein the thickness of the silver layer is from about  7  nm to about  20  nm.   
     
     
       155. The composite film of  claim 154 , wherein the thickness of the first and the second indium- cerium - oxide layer layers are each from about  30  nm to about  45  nm and the thickness of the silver layer is from about  12  nm to about  16  nm.   
     
     
       156. The composite film of  claim 125 , wherein the hard coating has a thickness of from about  1  μm to about  15  μm.