Capping layer for EUV optical elements

Abstract

Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B 4 C), silicon nitride (Si 3 N 4 ), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF 2 , LiF, C 2 F 4 and TiN and compounds and alloys thereof. The final period of a multilayer coating may also be modified to provide improved protective characteristics.

1. A lithographic projection apparatus, comprising:
 an illumination system constructed and arranged to supply a projection beam of radiation; 
 a first object table provided with a first object holder constructed and arranged to hold a mask; 
 a second object table provided with a second object holder constructed and arranged to hold a substrate; 
 a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate; and 
 at least one of said illumination system and projection system having an optical element with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relatively inert material, 
 wherein said relatively inert material is selected from the group consisting of: diamond-like carbon, Ru, Rh, TiN, MgF 2 , LiF, C 2 F 4  and compounds and alloys thereof, 
 wherein the optical element is configured to reflect the incident radiation. 
 
     
     
       2. Apparatus according to  claim 1  wherein said relatively inert material is more inert than material from which remaining portions of said optical element are formed. 
     
     
       3. Apparatus according to  claim 1  wherein said relatively inert material is less easily oxidized than the material from which remaining portions of said optical element are formed. 
     
     
       4. Apparatus according to  claim 1 , wherein said relatively inert material is harder than material from which remaining portions of said optical element is formed. 
     
     
       5. Apparatus according to  claim 1  wherein said optical element is a beam modifying element. 
     
     
       6. Apparatus according to  claim 5  wherein said optical element is a reflector having a multilayer coating on which said capping layer is provided. 
     
     
       7. Apparatus according to  claim 1  wherein said optical element is a sensor. 
     
     
       8. Apparatus according to  claim 1  wherein said capping layer comprises two sub-layers of different materials. 
     
     
       9. Apparatus according to  claim 1  wherein said projection beam comprises radiation, having a wavelength in the range of from 8 nm to 20 nm. 
     
     
       10. Apparatus according to  claim 9  wherein said projection beam comprises radiation having a wavelength in the range of from 9 nm to 16 nm. 
     
     
       11. Apparatus according to any one of the preceding claims wherein said capping layer has a thickness in the range of from 0.5 nm to 10 nm. 
     
     
       12. Apparatus according to  claim 11  wherein said capping layer has a thickness in the range of from 0.5 nm to 6 nm. 
     
     
       13. Apparatus according to  claim 12  wherein said capping layer has a thickness in the range of from 0.5 nm to 3 nm. 
     
     
       14. A device manufacturing method using a lithographic apparatus, the method comprising:
 providing a mask containing a pattern to a first object table; 
 providing a substrate at least partially covered by a layer of energy-sensitive material to a second object table; and 
 irradiating said mask and imaging irradiated portions of said pattern onto said substrate; 
 said irradiating comprising directing radiation onto a surface of an optical element, the surface having a capping layer formed of a relatively inert material, 
 wherein said relatively inert material is selected from the group consisting of: diamond-like carbon, Ru, Rh, TiN, MgF 2 , LiF, C 2 F 4  and compounds and alloys thereof, 
 wherein the optical element is configured to reflect the incident radiation. 
 
     
     
       15. A semiconductor device manufactured in accordance with the method of  claim 14 . 
     
     
       16. A lithographic projection apparatus, comprising:
 an illumination system constructed and arranged to supply a projection beam of radiation;   a first object table provided with a first object holder constructed and arranged to hold a mask;   a second object table provided with a second object holder constructed and arranged to hold a substrate;   a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate; and   at least one of said illumination system and projection system having a sensor with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relatively inert material,   wherein said relatively inert material is selected from the group consisting of: diamond-like carbon (C), Ru, Rh, Au, MgF 2 , LiF, C 2 F 4 , TiN and compounds and alloys thereof.   
     
     
       17. The lithographic projection apparatus according to  claim 16 ,
 wherein said relatively inert material is more inert than material from which remaining portions of said sensor are formed.   
     
     
       18. The lithographic projection apparatus according to  claim 16 ,
 wherein said relatively inert material is less easily oxidized than the material from which remaining portions of said sensor are formed.   
     
     
       19. The lithographic projection apparatus according to  claim 16 ,
 wherein said relatively inert material is harder than material from which remaining portions of said sensor is formed.   
     
     
       20. The lithographic projection apparatus according to  claim 16 ,
 wherein said capping layer has a thickness in the range of from 0.5 nm to 10 nm.   
     
     
       21. The lithographic projection apparatus according to  claim 20 ,
 wherein said capping layer has a thickness in the range of from 0.5 nm to 6 nm.   
     
     
       22. The lithographic projection apparatus according to  claim 20 ,
 wherein said capping layer has a thickness in the range of from 0.5 nm to 3 nm.   
     
     
       23. The lithographic projection apparatus according to  claim 16 ,
 wherein said capping layer comprises two sub-layers of different materials.   
     
     
       24. The lithographic projection apparatus according to  claim 16 ,
 wherein said projection beam comprises radiation having a wavelength in the range of from 8 nm to 20 nm.   
     
     
       25. A lithographic projection apparatus, comprising:
 an illumination system constructed an arranged to supply a projection beam of radiation; 
 a first object table provided with a first object holder constructed and arranged to hold a mask; 
 a second object table provided with a second object holder constructed and arranged to hold a substrate; 
 a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate; and 
 at least one of said illumination system and projection system having an optical element with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relative inert material, 
 wherein said optical element is a reflector having a multilayer reflective coating on which said capping layer is provided; and 
 wherein said relative inert material is selected from the group consisting of: diamond-like carbon (C), boron-nitride (BN), boron carbide (B 4 C), silicon nitride (Si 3 N 4 ), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF 2 , LiF, C 2 F 4 , TiN and compounds and alloys thereof, 
 wherein the optical element is configured to reflect the incident radiation. 
 
     
     
       26. The lithographic projection apparatus according to  claim 25 ,
 wherein said multilayer reflective coating comprises a plurality of layers of a first material having a relatively low reflective index at the wavelength of said projection beam. 
 
     
     
       27. The lithographic projection apparatus according to  claim 26 ,
 wherein said multilayer reflective coating further comprises a plurality of layers of a second material having a relatively high reflective index at the wavelength and alternating with said layers of said first material. 
 
     
     
       28. The lithographic projection apparatus according to  claim 25 ,
 wherein said relatively inert material is more inert than material from which remaining portions of said optical element are formed. 
 
     
     
       29. The lithographic projection apparatus according to  claim 25 ,
 wherein said relatively inert material is less easily oxidized than the material from which remaining portions of said optical element are formed. 
 
     
     
       30. The lithographic projection apparatus according to  claim 25 ,
 wherein said relatively inert material is harder than material from which remaining portions of said optical element is formed. 
 
     
     
       31. The lithographic projection apparatus according to  claim 25 ,
 wherein said capping layer has a thickness in the range of from 0.5 nm to 10 nm. 
 
     
     
       32. The lithographic projection apparatus according to  claim 31 ,
 wherein said capping layer has a thickness in the range of from 0.5 nm to 6 nm. 
 
     
     
       33. The lithographic projection apparatus according to  claim 31 ,
 wherein said capping layer has a thickness in the range of from 0.5 nm to 3 nm. 
 
     
     
       34. The lithographic projection apparatus according to  claim 25 ,
 wherein said projection beam comprises radiation having a wavelength in the range of from 8 nm to 20 nm. 
 
     
     
       35. A lithographic projection apparatus, comprising:
 an illumination system constructed and arranged to supply a projection beam of radiation; 
 a first object table provided with a first object holder constructed and arranged to hold a mask; 
 a second object table provided with a second object holder constructed and arranged to hold a substrate; 
 a projection system constructed and arranged to utilize said radiation to image an irradiated portion of the mask onto a target portion of the substrate; and 
 at least one of said illumination system and projection system having an optical element with a surface on which radiation is incident and a capping layer covering said surface, said capping layer being formed of a relatively inert material, 
 wherein said optical element comprises:
 a reflector having a multilayer reflective coating on said surface, said multilayer reflective coating comprising a plurality of layers of a first material having a relatively low refractive index at the wavelength of said projection beam; 
 layers of a second material having a relatively high refractive index at said wavelength and alternating with said layers of said first material; and 
 said capping layer comprises:
 a first sub-layer of said first material; 
 a second sub-layer of a third material having a refractive index at said wavelength higher than said first material and being more inert than said second material; and 
 a third sub-layer formed of a fourth material that is relatively inert, said first, second and third sub-layers being provided in that order with said third sub-layer outermost, 
 
 
 wherein the optical element is configured to reflect the incident radiation. 
 
     
     
       36. The lithographic projection apparatus according to  claim 35 ,
 wherein said third material has a refractive index at said wavelength greater than about 0.95 and an extinction coefficient at said wavelength less than about 0.01. 
 
     
     
       37. The lithographic projection apparatus according to  claim 36 ,
 wherein said first material is one or more materials selected from the group consisting of Mo, Ru, Rh, Nb, Pd, Y and Zr, as well as compounds and alloys of these elements; 
 said second material is one or more materials selected from the group consisting of Be, Si, Sr, Rb, RbCl and P, as well as compounds and alloys thereof; 
 said third material is selected from the group consisting of B 4 C, BN, diamond-like carbon (C), Si 3 N 4  and SiC; and 
 said fourth material is selected from the group consisting of Au, Ru, Rh, Pd, B, MgF 2 , LiF, C 2 F 4 , TiN, boron nitride (BN), boron carbide (B 4 C 9 ), silicon nitride (Si 3 N 4 ), Silicon carbide (SiC), diamond-like carbon (C), and compounds and alloys thereof. 
 
     
     
       38. The lithographic projection apparatus according to  claim 35 ,
 wherein said projection beam comprises radiation having a wavelength in the range of from 8 nm to 20 nm. 
 
     
     
       39. A device manufacturing method, comprising:
 providing a substrate that is at least partially covered by a layer of energy-sensitive material;   directing radiation towards an optical element having a capping layer that covers a surface on which the radiation is incident, said capping layer being formed of a relatively inert material selected from the group consisting of: diamond-like carbon, TiN, MgF2, LiF, C 2 F 4  and compounds and alloys thereof; and   irradiating a target portion of the substrate with the radiation to image a pattern onto the substrate,   wherein the optical element is configured to reflect the incident radiation.   
     
     
       40. The device manufacturing method of claim 39, wherein the optical element comprises a mask. 
     
     
       41. The device manufacturing method of claim 40, wherein the mask is configured as a multi-layer mask. 
     
     
       42. The device manufacturing method of claim 39, wherein the optical element comprises a beam-modifying element. 
     
     
       43. The device manufacturing method of claim 39, wherein the optical element comprises a beam-directing element. 
     
     
       44. The device manufacturing method of claim 39, wherein the optical element comprises a beam-focusing element. 
     
     
       45. The device manufacturing method of claim 39, wherein the optical element comprises a beam-shaping element. 
     
     
       46. The device manufacturing method of claim 39, wherein the optical element comprises a beam-controlling element. 
     
     
       47. The device manufacturing method of claim 39, wherein the optical element comprises a reflector. 
     
     
       48. The device manufacturing method of claim 39, wherein the optical element comprises a mirror. 
     
     
       49. The device manufacturing method of claim 48, wherein the mirror is configured as a multilayer near-normal incidence mirror. 
     
     
       50. The device manufacturing method of claim 48, wherein the optical element comprises a grazing-incidence mirror. 
     
     
       51. The device manufacturing method of claim 39, wherein the optical element comprises an integrator. 
     
     
       52. The device manufacturing method of claim 39, wherein the optical element comprises a scattering plate. 
     
     
       53. The device manufacturing method of claim 39, wherein the optical element comprises a sensor. 
     
     
       54. The device manufacturing of claim 53, wherein the optical element comprises an image sensor. 
     
     
       55. The device manufacturing method of claim 53, wherein the optical element comprises a spot sensor. 
     
     
       56. A lithographic apparatus, comprising:
 an illumination system constructed and arranged to supply a beam of radiation;   a projection system constructed and arranged to utilize said radiation to image a pattern onto a target portion of a substrate; and   an optical element having a capping layer that covers a surface on which said radiation is incident, said capping layer being formed of a relatively inert material selected from the group consisting of: diamond-like carbon, TiN, MgF2, LiF, C 2 F 4  and compounds and alloys thereof,   wherein the optical element is configured to reflect the incident radiation.   
     
     
       57. The lithographic apparatus of claim 56, wherein the optical element comprises a mask. 
     
     
       58. The lithographic apparatus of claim 57, wherein the mask is configured as a multi-layer mask. 
     
     
       59. The lithographic apparatus of claim 56, wherein the optical element comprises a beam-modifying element. 
     
     
       60. The lithographic apparatus of claim 56, wherein the optical element comprises a beam-directing element. 
     
     
       61. The lithographic apparatus of claim 56, wherein the optical element comprises a beam-focusing element. 
     
     
       62. The lithographic apparatus of claim 56, wherein the optical element comprises a beam-shaping element. 
     
     
       63. The lithographic apparatus of claim 56, wherein the optical element comprises a beam-controlling element. 
     
     
       64. The lithographic apparatus of claim 56, wherein the optical element comprises a reflector. 
     
     
       65. The lithographic apparatus of claim 56, wherein the optical element comprises a mirror. 
     
     
       66. The lithographic apparatus of claim 65, wherein the mirror is configured as a multilayer near-normal incidence mirror. 
     
     
       67. The lithographic apparatus of claim 65, wherein the optical element comprises a grazing-incidence mirror. 
     
     
       68. The lithographic apparatus of claim 56, wherein the optical element comprises an integrator. 
     
     
       69. The lithographic apparatus of claim 56, wherein the optical element comprises a scattering plate. 
     
     
       70. The lithographic apparatus of claim 56, wherein the optical element comprises a sensor. 
     
     
       71. The lithographic apparatus of claim 70, wherein the optical element comprises an image sensor. 
     
     
       72. The lithographic apparatus of claim 70, wherein the optical element comprises a spot sensor. 
     
     
       73. A device manufacturing method, comprising:
 providing a substrate that is at least partially covered by a layer of energy-sensitive material;   directing radiation towards a mask to form a patterned beam of radiation, the mask having a capping layer that covers a surface on which the radiation is incident, an outermost layer of said capping layer being formed of a relatively inert material selected from the group consisting of diamond-like carbon, Rh, TiN, MgF2, LiF, C 2 F 4  and compounds and alloys thereof or from the group consisting of Ru and a non-oxidized compound thereof; and   irradiating a target portion of the substrate with the patterned beam of radiation,   where the mask is configured to reflect the incident radiation.   
     
     
       74. A mask configured to pattern radiation in a lithographic apparatus, the mask comprising:
 a capping layer that covers a surface on which the radiation is incident, an outermost layer of said capping layer being formed of a relatively inert material selected from the group consisting of diamond-like carbon, Rh, TiN, MgF2, LiF, C 2 F 4  and compounds and alloys thereof or from the group consisting of Ru and a non-oxidized compound thereof,   wherein the mask is configured to reflect the incident radiation.