Light emitting diode having a transparent substrate

Abstract

A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

1. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a transparent substrate; 
 an amorphous interface layer formed on the transparent substrate; and 
 a top surface of the amorphous interface layer comprising a first surface region and a second surface region; 
 a p + -type contact layer formed on the first surface region; 
 a p-type cladding layer formed on the p + -type contact layer; 
 a multiple quantum well (MQW) light-emitting layer formed on the p-type cladding layer; 
 an n-type cladding layer formed on the MQW light-emitting layer; 
 an n-type stop layer formed on the n-type cladding layer; 
 a transparent conductive layer formed on the n-type stop layer; 
 a first electrode formed on the transparent conductive layer; and 
 a second electrode formed on the second surface region 
 a semiconductor light emitting stack comprising a first contact layer formed on the amorphous interface layer, a first conductive type cladding layer formed on the first contact layer, a semiconductor light-emitting layer formed on the first conductive type cladding layer, a second conductive type cladding layer formed on the semiconductor light-emitting layer, and a second contact layer formed on the second conductive type cladding layer. 
 
     
     
       2. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a transparent substrate comprising sapphire;   an amorphous interface layer formed on the transparent substrate, a top surface of the amorphous interface layer comprising a first surface region and a second surface region;   a contact layer of p + -type GaAs formed on the first surface region;   a p-type cladding layer of p-type AlGaInP formed on the contact layer;   a light-emitting layer of AlGaInP formed on the p-type cladding layer;   an n-type cladding layer of n-type AlGaInP formed on the light-emitting layer;   a stop layer of n-type AlGaAs formed on the n-type cladding layer;   an indium tin oxide (ITO) transparent conductive layer formed on the stop layer;   a first electrode formed on the ITO transparent conductive layer; and   a second electrode formed on the second surface region.   
     
     
       3. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 an ohmic contact electrode; 
 a p-type transparent substrate formed on the ohmic contact electrode; 
 a first p + -type contact layer formed on the transparent substrate; 
 an amorphous interface layer formed on the first p + -type contact layer; 
 a second p + -type contact layer formed on the amorphous interface layer; 
 a p-type cladding layer formed on the second p + -type contact layer; 
 a light-emitting layer formed on the p-type cladding layer; 
 an n-type cladding layer formed on the light-emitting layer; 
 an n-type stop layer formed on the n-type cladding layer; 
 a transparent conductive layer formed on the n-type stop layer; and 
 a first electrode formed on the transparent conductive layer. 
 
     
     
       4. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 an ohmic contact electrode;   a p-type GaP transparent substrate formed on the ohmic contact electrode;   a first p + -type contact layer of p + -type GaAs formed on the p-type GaP transparent substrate;   an indium tin oxide amorphous interface layer formed on the first p + -type contact layer;   a second p + -type contact layer of p + -type GaAs formed on the indium tin oxide amorphous interface layer;   a p-type cladding layer of a p-type AlGaInP formed on the second p + -type contact layer;   a multiple quantum well light-emitting layer of AlGaInP formed on the p-type cladding layer;   an n-type cladding layer of n-type AlGaInP formed on the light-emitting layer;   a stop layer of n-type AlGaAs formed on the n-type cladding layer;   an indium tin oxide (ITO) transparent conductive layer formed on the stop layer;   a first electrode formed on the ITO transparent conductive layer.   
     
     
       5. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a first electrode; 
 an n-type transparent substrate formed on the first electrode; 
 an amorphous interface layer formed on the n-type transparent substrate; 
 an n-type contact layer formed on the amorphous interface layer; 
 an n-type cladding layer formed on the n-type contact layer; 
 a light-emitting layer formed on the n-type cladding layer; 
 a p-type cladding layer formed on the light-emitting layer; 
 a p-type buffer layer formed on the p-type cladding layer; 
 a p + -type contact layer formed on the p-type buffer layer; 
 a transparent conductive layer formed on the p + -type contact layer; and 
 a second electrode formed on the transparent conductive layer. 
 
     
     
       6. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a first electrode;   a transparent substrate of n-type GaP formed on the first electrode;   an indium tin oxide (ITO) amorphous interface layer formed on the transparent substrate of n-type GaP;   a contact layer of n-type GaP formed on the ITO amorphous interface layer;   a cladding layer of n-type AlGaInP formed on the contact layer of n-type GaP;   a multiple quantum well (MQW) light-emitting layer of AlGaInP formed on the cladding layer of n-type AlGaInP;   a cladding layer of p-type AlGaInP formed on the MQW light-emitting layer of AlGaInP;   a buffer layer of p-type AlGaAs formed on the cladding layer of p-type AlGaInP;   a contact layer of p + -type GaAs formed on the buffer layer of p-type AlGaAs;   an indium tin oxide (ITO) transparent conductive layer formed on the contact layer of p + -type GaAs; and   a second electrode formed on the ITO transparent conductive layer.   
     
     
       7. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a transparent substrate; 
 an amorphous, interface layer formed on the transparent substrate, a top surface of the amorphous interface layer comprising a first surface region and a second surface region; 
 an n + -type reverse-tunneling contact layer formed on the first surface region; 
 a p-type cladding layer of formed on the n + -type reverse-tunneling contact layer; 
 a light-emitting layer formed on the p-type cladding layer; 
 an n-type cladding layer formed on the light-emitting layer; 
 a first contact electrode formed on the n-type cladding layer; and 
 a second electrode formed on the second surface region. 
 
     
     
       8. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a transparent substrate comprising glass;   an indium tin oxide (ITO) amorphous interface layer formed on the transparent substrate, a top surface of the ITO amorphous interface layer comprising a first surface region and a second surface region;   a reverse-tunneling contact layer of n + -type InGaN formed on the first surface region;   a cladding layer of a p-type GaN formed on the reverse-tunneling contact layer of n + -type InGaN;   a multiple quantum well (MQW) light-emitting layer of InGaN formed on the cladding layer of a p-type GaN;   a cladding layer of n-type GaN formed on the MQW light-emitting layer of InGaN;   a first contact electrode formed on the cladding layer of n-type GaN;   a second electrode formed on the second surface region.   
     
     
       9. The light emitting diode as claimed in claim 1, wherein a transparent conductive layer is formed on the semiconductor light emitting stack. 
     
     
       10. The light emitting diode as claimed in claim 1, wherein a buffer layer is formed on the second conductive type cladding layer. 
     
     
       11. The light emitting diode as claimed in claim 10, wherein the buffer layer comprises AlGaAs. 
     
     
       12. The light emitting diode as claimed in claim 1, wherein the second contact layer comprises GaAs. 
     
     
       13. The light emitting diode as claimed in claim 1, wherein a buffer layer is formed between the second conductive type cladding layer and the second contact layer. 
     
     
       14. The light emitting diode as claimed in claim 13, wherein the buffer layer comprises AlGaAs. 
     
     
       15. The light emitting diode as claimed in claim 9, wherein the transparent conductive layer comprises indium tin oxide. 
     
     
       16. A light emitting diode having a transparent substrate, the light emitting diode comprising:
 a transparent substrate;   an amorphous interface layer comprising indium tin oxide formed on the transparent substrate;   a semiconductor light emitting stack comprising a first contact layer formed on the amorphous interface layer, a first conductive type cladding layer formed on the first contact layer, a semiconductor light-emitting layer formed on the first conductive type cladding layer, a second conductive type cladding layer formed on the semiconductor light-emitting layer, and a second contact layer formed on the second conductive type cladding layer.