Tap connections for circuits with leakage suppression capability

Abstract

An integrated circuit biases the substrate and well using voltages other than those used for power and ground. Tap cells inside the standard cell circuits are removed. New tap cells used to bias the substrate and well reside outside the standard cell circuits. The location of the new voltage power rails is designated prior to placement of the tap cells in the integrated circuit. The tap cells are then strategically placed near the power rails such that metal connections are minimized. Circuit density is thus not adversely impacted by the addition of the new power rails. Transistors are also placed inside the tap cells to address electrostatic discharge issues during fabrication.

1. An apparatus comprising:
 a well of a first type comprising a first plurality of regions; 
 a substrate of a second type comprising a second plurality of regions; 
 a first plurality of circuits formed on the well;  
 a second plurality of circuits formed on the substrate; 
 a first potential coupled to and powering the first plurality of circuits; 
 a second potential coupled to and powering the second plurality of circuits; 
 a third potential coupled to and biasing the first plurality of regions such that the well has the third potential; and 
 a fourth potential coupled to and biasing the second plurality of regions such that the substrate has the fourth potential. 
 
     
     
       2. The apparatus of  claim 1 , wherein the first potential is a lower voltage than the third potential. 
     
     
       3. The apparatus of  claim 1 , wherein the second potential is a lower higher voltage than the fourth potential. 
     
     
       4. The apparatus of  claim 1 , wherein the first plurality of regions are 55 microns apart. 
     
     
       5. The apparatus of  claim 1 , further comprising:
 a first transistor coupled between the first potential and the third potential; and 
 a second transistor coupled between the second potential and the fourth potential. 
 
     
     
       6. The apparatus of  claim 5 , wherein the first plurality of regions and the second plurality of regions are combined as tap cells. 
     
     
       7. The apparatus of  claim 6 , wherein the tap cells comprise the first and the second transistors. 
     
     
       8. The apparatus of  claim 1 , wherein the substrate is of a p-type material and the well is of an n-type material.