Mixed composition interface layer and method of forming

Abstract

An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

1. A capacitor comprising:
 a first capacitor plate over a semiconductive substrate, the first plate comprising a first metal selected from the group consisting of Pt and Ru; 
 an interface layer chemisorbed on and in contact with the first plate, the interface layer comprising at least one monolayer of the first metal intermixed with a second metal selected from the group consisting of Ba, Sr, Ti, Pb, Zr, and Ta; 
 a capacitor dielectric layer comprising the second metal on and in contact with the interface layer, the interface layer improving adhesion between the first plate and the dielectric layer compared to adhesion otherwise occurring with the dielectric layer formed on and in contact with the first plate in the absence of the interface layer; and 
 a second capacitor plate over the dielectric layer. 
 
     
     
       2. The article of  claim 1  wherein the dielectric layer does not substantially comprise the first metal. 
     
     
       3. The article of  claim 1  wherein the first plate consists of Pt or Ru. 
     
     
       4. The article of  claim 1  wherein the interface layer provides a composition gradient across a thickness of the interface layer from the first plate to the dielectric layer. 
     
     
       5. The capacitor of  claim 1  wherein the interface layer does not substantially comprise material originating from the first plate or the dielectric layer. 
     
     
       6. The capacitor of  claim 1  wherein the interface layer reduces defects between the first plate and the dielectric layer compared to defects otherwise occurring with the dielectric layer formed on and in contact with the first plate in the absence of the interface layer. 
     
     
       7. The article of  claim 1  wherein the first plate does not substantially comprise the second metal. 
     
     
       8. The article of  claim 7  wherein the dielectric layer does not substantially comprise the first metal. 
     
     
       9. The article of  claim 1  wherein the dielectric layer consists of barium strontium titanate, lead zirconate titanate, or Ta 2 O 5 . 
     
     
       10. The article of  claim 9  wherein the metal comprises Pt. 
     
     
       11. An electronic device comprising:
 a capacitor plate with a conductive first layer comprising a first chemical element; 
 a capacitor dielectric with an insulative second layer comprising a second chemical element different from the first chemical element; and 
 an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements, not substantially comprising material originating from the first or second layers, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the first chemical element to the second chemical element in the interface layer proximate the first layer is greater than a second ratio of the first chemical element to the second chemical element in the interface layer proximate the second layer. 
 
     
     
       12. The device of  claim 11  wherein the second layer does not substantially comprise the first chemical element. 
     
     
       13. The electronic device of  claim 11  further comprising a semiconductor substrate, the first layer being over the substrate. 
     
     
       14. The capacitor of  claim 11  wherein the interface layer reduces defects between the first layer and the second layer compared to defects otherwise occurring with the second layer formed on and in contact with the first layer in the absence of the interface layer. 
     
     
       15. The capacitor of  claim 11  wherein the interface layer improves adhesion between the first layer and the second layer compared to adhesion otherwise occurring with the second layer formed on and in contact with the first layer in the absence of the interface layer. 
     
     
       16. The device of  claim 11  wherein the first layer does not substantially comprise the second chemical element. 
     
     
       17. The device of  claim 16  wherein the second layer does not substantially comprise the first chemical element. 
     
     
       18. An electronic device comprising:
 a capacitor plate with a conductive first layer comprising a first chemical element; 
 a capacitor dielectric with an insulative second layer comprising a second chemical element different from the first chemical element; and 
 an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements, not substantially comprising material originating from the first or second layers, providing a composition gradient across a thickness of the interface layer, and comprising at least one monolayer of intermixed first and second chemical elements chemisorbed on the first layer. 
 
     
     
       19. The capacitor of  claim 18  wherein the interface layer reduces defects between the first layer and the second layer compared to defects otherwise occurring with the second layer formed on and in contact with the first layer in the absence of the interface layer. 
     
     
       20. The capacitor of  claim 18  wherein the interface layer improves adhesion between the first layer and the second layer compared to adhesion otherwise occurring with the second layer formed on and in contact with the first layer in the absence of the interface layer. 
     
     
       21. A capacitor comprising:
 a first capacitor plate comprising a first chemical element; 
 a first portion of at least one monolayer chemisorbed on the first plate, the first portion comprising the first chemical element; 
 a second portion of the at least one monolayer chemisorbed on the first plate, the second portion comprising a second chemical element different from the first chemical element; 
 an interface layer comprising the first and second portions of the at least one monolayer; 
 a dielectric layer comprising the second chemical element on the interface layer; and 
 a second capacitor plate over the dielectric layer. 
 
     
     
       22. The device of  claim 21  wherein the dielectric layer does not substantially comprise the first chemical element. 
     
     
       23. The device of  claim 21  wherein the first portion of the at least one monolayer is chemisorbed on first parts of the first plate and the second portion of the at least one monolayer is chemisorbed on second parts of the first plate. 
     
     
       24. The device of  claim 21  wherein the at least one monolayer comprises from about 1 to about 10 monolayers. 
     
     
       25. The electronic device of  claim 21  further comprising a semiconductor substrate, the first layer being over the substrate. 
     
     
       26. The capacitor of  claim 21  wherein the interface layer does not substantially comprise material originating from the first plate or the dielectric layer. 
     
     
       27. The capacitor of  claim 21  wherein the interface layer reduces defects between the first plate and the dielectric layer compared to defects otherwise occurring with the dielectric layer formed on and in contact with the first plate in the absence of the interface layer. 
     
     
       28. The capacitor of  claim 21  wherein the interface layer improves adhesion between the first plate and the dielectric layer compared to adhesion otherwise occurring with the dielectric layer formed on and in contact with the first plate in the absence of the interface layer. 
     
     
       29. The device of  claim 21  wherein the first plate does not substantially comprise the second chemical element. 
     
     
       30. The device of  claim 29  wherein the dielectric layer does not substantially comprise the first chemical element. 
     
     
       31. An electronic device comprising:
 a conductive first layer comprising a metal containing Pt and/or Ru; 
 an insulative second layer comprising Ta; and 
 an interface layer between and in contact with the first and second layers, the interface layer comprising the metal and Ta, not substantially comprising material originating from the first or second layers, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the metal to Ta in the interface layer proximate the first layer is greater than a second ratio of the metal to Ta in the interface layer proximate the second layer. 
 
     
     
       32. The capacitor of  claim 31  wherein the interface layer reduces defects between the first layer and the second layer compared to defects otherwise occurring with the second layer formed on and in contact with the first layer in the absence of the interface layer. 
     
     
       33. The capacitor of  claim 31  wherein the interface layer improves adhesion between the first layer and the second layer compared to adhesion otherwise occurring with the second layer formed on and in contact with the first layer in the absence of the interface layer. 
     
     
       34. A capacitor comprising:
 a first conductive plate over a semiconductor substrate, the first plate comprising a first metal;   an interface layer in contact with the first plate, the interface layer comprising at least one monolayer of the first metal intermixed with a second metal which is different from the first metal;   a dielectric layer comprising the second metal on and in contact with the interface layer, the interface layer being disposed between the first plate and the dielectric layer such that the interface layer adheres to both the dielectric layer and the first plate; and   a second conductive plate over the dielectric layer.   
     
     
       35. A capacitor comprising:
 a first conductive layer comprising a first chemical element;   a first portion of at least one monolayer on the first conductive layer, the first portion comprising the first chemical element;   a second portion of the at least one monolayer on the first conductive layer, the second portion comprising a second chemical element different from the first chemical element;   an interface layer comprising the first and second portions of the at least one monolayer;   a dielectric layer comprising the second chemical element on the interface layer; and   a second conductive layer over the dielectric layer.   
     
     
       36. An electronic device comprising:
 a conductive first layer comprising a first chemical element;   a dielectric second layer comprising a second chemical element different from the first chemical element; and   an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the first chemical element to the second chemical element in the interface layer proximate the first layer is greater than a second ratio of the first chemical element to the second chemical element in the interface layer proximate the second layer.   
     
     
       37. The capacitor of claim 34 wherein the first metal is selected from the group consisting of Ru, Ta, and Pt. 
     
     
       38. The capacitor of claim 34 wherein the dielectric layer comprises at least one of: barium strontium titanate, lead zirconate titanate, and tantalum oxide. 
     
     
       39. The capacitor of claim 34 wherein the second metal comprises at least one of: Ba, Sr, Ti, Pb, Zr, and Ta. 
     
     
       40. The capacitor of claim 35 wherein the first chemical element is selected from the group consisting of Ru, Ta, and Pt. 
     
     
       41. The capacitor of claim 35 wherein the dielectric layer comprises at least one of: barium strontium titanate, lead zirconate titanate, and tantalum oxide. 
     
     
       42. The capacitor of claim 35 wherein the second chemical element comprises at least one of: Ba, Sr, Ti, Pb, Zr, and Ta. 
     
     
       43. The electronic device of claim 36 wherein the first chemical element is selected from the group consisting of Ru, Ta, and Pt. 
     
     
       44. The electronic device of claim 36 wherein the dielectric second layer comprises at least one of: barium strontium titanate, lead zirconate titanate, and tantalum oxide. 
     
     
       45. The capacitor of claim 36 wherein the second chemical element comprises at least one of: Ba, Sr, Ti, Pb, Zr, and Ta.