Mounting structure and mounting method of a semiconductor device, and liquid crystal display device

Abstract

A mounting structure of a semiconductor device includes an electroconductive film provided on a substrate. An insulating film is formed on the electroconductive film, and provided with an opening portion to expose a part of the electroconductive film, and its internal stress is set to serve as a compression stress. An anisotropic electroconductive binding material is disposed across the part of the electroconductive film exposed by the opening portion and the insulating film. A semiconductor device has a plurality of electrodes, and is disposed on the anisotropic electroconductive binding material. The electrodes are electrically connected with the electroconductive film through the anisotropic electroconductive binding material.

1. A mounting structure of a semiconductor device, comprising:
 a substrate; 
 an electroconductive film provided on the substrate; 
 an insulating film which is formed on the electroconductive film and which is provided with an opening portion to expose a part of the electroconductive film and whose internal stress is set to be a compression stress; 
 an anisotropic electroconductive binding material which is disposed on the part of the electroconductive film exposed by the opening portion and on the insulating film; and 
 a semiconductor device which has a plurality of electrodes and is disposed on the anisotropic electroconductive binding material, the plurality of electrodes being electrically connected with the electroconductive film through the anisotropic electroconductive binding material. 
 
     
     
       2. The mounting structure according to  claim 1 , wherein the anisotropic electroconductive binding material is provided in an entire region where the semiconductor device is mounted, and provided in an outside of the region. 
     
     
       3. The mounting structure according to  claim 2 , wherein the anisotropic electroconductive binding material outside the region has an unhardened part when the semiconductor device is mounted. 
     
     
       4. The mounting structure according to  claim 1 , wherein another insulating film in which another opening portion communicating with the opening portion is provided is interposed between the electroconductive film and the insulating film. 
     
     
       5. The mounting structure according to  claim 4 , wherein an internal stress of another insulating film is set to be a compression stress. 
     
     
       6. The mounting structure according to  claim 1 , wherein another insulating film in which another opening portion communicating with the opening portion is provided is interposed between the electroconductive film and the insulating film, and
 the mounting structure includes another electroconductive film formed between the insulating film and another insulating film. 
 
     
     
       7. The mounting structure according to  claim 6 , wherein the insulating film and another insulating film are provided in an entire region where the semiconductor device is mounted, and provided in an outside of the region. 
     
     
       8. The mounting structure according to  claim 6 , wherein the substrate includes a transistor array circuit substrate having a plurality of thin film transistors, and
 a plurality of gate lines each of which has a gate terminal in the region where the semiconductor device is mounted and is connected with a gate electrode of each of the plurality of thin film transistors or a plurality of drain lines each of which has a drain terminal in the region where the semiconductor device is mounted and is connected with a drain electrode of each of the plurality of thin film transistors are formed of the electroconductive film. 
 
     
     
       9. The mounting structure according to  claim 8 , wherein either the plurality of gate lines or the plurality of drain lines which are not formed of the electroconductive film are formed of another electroconductive film. 
     
     
       10. The mounting structure according to  claim 8 , wherein each of the plurality of electrodes of the semiconductor device is connected with either one of the plurality of gate terminals or one of the plurality of drain terminals therebetween through the anisotropic electroconductive binding material. 
     
     
       11. The mounting structure according to  claim 8 , wherein the plurality of gate terminals and the plurality of drain terminals are provided on one side of the substrate. 
     
     
       12. The mounting structure according to  claim 6 , wherein the substrate is a transistor array circuit substrate having a plurality of thin film transistors, and
 a plurality of gate lines each of which has a gate terminal in the region where the semiconductor device is mounted and is connected with a gate electrode of each of the plurality of thin film transistors are formed of the electroconductive film, and a plurality of drain lines each of which has a drain terminal in the region where the semiconductor device is mounted and is connected with a drain electrode of each of the plurality of thin film transistors are formed of another electroconductive film. 
 
     
     
       13. A liquid crystal display device comprising:
 a pair of substrates; 
 an electroconductive film provided on one of the pair of substrates; 
 an insulating film which is formed on the electroconductive film and which is provided with an opening portion to expose a part of the electroconductive film therefrom and whose internal stress is be to serve as a compression stress; 
 an anisotropic electroconductive binding material which is disposed on the part of the electroconductive film exposed by the opening portion and on the insulating film; and 
 a semiconductor device which has a plurality of electrodes and is disposed on the anisotropic electroconductive binding material, the plurality of electrodes being electrically connected with the electroconductive film through the anisotropic electroconductive binding material. 
 
     
     
       14. The liquid crystal display device according to  claim 13 , wherein the anisotropic electroconductive binding material is provided in an entire region where the semiconductor device is mounted, and provided in an outside of the region. 
     
     
       15. The liquid crystal display device according to  claim 14 , wherein the anisotropic electroconductive binding material outside the region has an unhardened part when the semiconductor device is mounted. 
     
     
       16. The liquid crystal display device according to  claim 13 , wherein another insulating film in which an opening portion communicating with the opening portion is provided is interposed between the electroconductive film and the insulating film. 
     
     
       17. The liquid crystal display device according to  claim 16 , wherein an internal stress of another insulating film is set to be a compression stress. 
     
     
       18. The liquid crystal display device according to  claim 16 , wherein another insulating film in which another opening portion communicating with the opening portion is provided is interposed between the electroconductive film and the insulating film, and
 the liquid crystal display device includes another electroconductive film formed between the insulating film and another insulating film. 
 
     
     
       19. The liquid crystal display device according to  claim 18 , wherein the insulating film and another insulating film are provided in an entire region where the semiconductor device is mounted, and provided in an outside of the region. 
     
     
       20. The liquid crystal display device according to  claim 18 , wherein one of the substrates includes a transistor array circuit substrate having a plurality of thin film transistors, and
 a plurality of gate lines each of which has a gate terminal in the region where the semiconductor device is mounted and is connected with a gate electrode of each of the thin film transistors or a plurality of drain lines each of which has a drain terminal in the region where the semiconductor device is mounted and is connected with a drain electrode of each of the thin film transistors are formed of the electroconductive film. 
 
     
     
       21. The liquid crystal display device according to  claim 20 , wherein either the plurality of gate lines or the plurality of drain lines which are not formed of the electroconductive film are formed of another electroconductive film. 
     
     
       22. The liquid crystal display device according to  claim 20 , wherein each of the plurality of electrodes of the semiconductor device is connected with either one of the plurality of gate terminals or one of the plurality of drain terminals therebetween through the anisotropic electroconductive binding material. 
     
     
       23. The liquid crystal display device according to  claim 20 , wherein the plurality of gate terminals and the plurality of drain terminals are provided on one side of one of the substrates. 
     
     
       24. The liquid crystal display device according to  claim 18 , wherein one of the substrates inlcudes a transistor array circuit substrate having a plurality of thin film transistors, and
 a plurality of gate lines each of which has a gate terminal in the region where the semiconductor device is mounted and is connected with a gate electrode of each of the plurality of thin film transistors are formed of the electroconductive film, and a plurality of drain lines each of which has a drain terminal in the region where the semiconductor device is mounted and is connected with a drain electrode of each the plurality of thin film transistors are formed of another electroconductive film. 
 
     
     
       25. A liquid crystal display device comprising:
 a pair of substrates;   at least one electroconductive film provided on one side of a surface of one of the pair of substrates;   an insulating film which is formed on the electroconductive film and which is provided with an opening exposing a part of the electroconductive film and whose internal stress is set to be a compression stress;   an anisotropic electroconductive binding material which is disposed on a side of a surface of the part of the electroconductive film exposed by the opening and on the insulating film; and   a semiconductor device which has a plurality of electrodes and is disposed on the anisotropic electroconductive binding material, one of the plurality of electrodes being electrically connected with the electroconductive film through the anisotropic electroconductive binding material.   
     
     
       26. The liquid crystal display device according to claim 25, wherein the anisotropic electroconductive binding material is provided in an entire region where the semiconductor device is mounted, and is provided outside of the region, and the anisotropic electroconductive binding material outside of the region has an unhardened part when the semiconductor device is mounted. 
     
     
       27. The liquid crystal display device according to claim 25, wherein another electroconductive film is interposed between said one of the pair of substrates and the electroconductive film, and another insulating film is interposed between the electroconductive film and another electroconductive film. 
     
     
       28. The liquid crystal display device according to claim 27, wherein said another insulating film is provided with another opening exposing a part of said another electroconductive film. 
     
     
       29. The liquid crystal display device according to claim 25, wherein another electroconductive film is interposed between the substrate and the electroconductive film, a plurality of thin film transistors are arranged on said one side of the surface of said one of the pair of substrates, and one of (i) a gate line or a first pulled-out wiring line which is electrically connected with a gate terminal in a region where the semiconductor device is mounted and gate electrodes of the plurality of thin film transistors and (ii) a drain line or a second pulled-out wiring line which is electrically connected with a drain terminal in the region where the semiconductor device is mounted and drain electrodes of the plurality of thin film transistors, which is not formed of the electroconductive film is formed of said another electroconductive film. 
     
     
       30. The liquid crystal display device according to claim 25, wherein a plurality of electroconductive films are provided, a plurality of thin film transistors are arranged on said one side of the surface of said one of the pair of substrates, and one of (i) a plurality of gate lines or a plurality of first pulled-out wiring lines which are electrically connected with gate terminals in a region where the semiconductor device is mounted and gate electrodes of the plurality of thin film transistors and (ii) a plurality of drain lines or a plurality of second pulled-out wiring lines which are electrically connected with drain terminals in the region where the semiconductor device is mounted and drain electrodes of the plurality of thin film transistors, are formed of the electroconductive films. 
     
     
       31. The liquid crystal display device according to claim 30, wherein further electroconductive films are interposed between said one of the pair of substrates and the electroconductive films, and wherein the plurality of gate lines are formed of said further electroconductive films, and the plurality of drain lines are formed of the electroconductive films. 
     
     
       32. The liquid crystal display device according to claim 30, wherein further electroconductive films are interposed between said one of the pair of substrates and the electroconductive films, and wherein the plurality of first pulled-out wiring lines are formed of said further electroconductive films, and the plurality of second pulled-out wiring lines are formed of the electroconductive films. 
     
     
       33. A liquid crystal display device of a semiconductor device comprising:
 a pair of substrates;   at least one electroconductive layer provided on one side of one of the pair of substrates;   an insulating layer which is formed on the electroconductive layer and which is provided with an opening exposing a part of said electroconductive layer and which includes a first insulating film and a second insulating film whose internal stresses are set to be compression stresses;   an anisotropic electroconductive binding material which is disposed on one side of the part of the electroconductive layer exposed by the opening and on the insulating layer; and   a semiconductor device which has a plurality of electrodes and is disposed on the anisotropic electroconductive binding material, one of the plurality of the electrodes being electrically connected with the electroconductive layer through the anisotropic electroconductive binding material.   
     
     
       34. The liquid crystal display device according to claim 33, wherein the anisotropic electroconductive binding material is provided in an entire region where the semiconductor device is mounted, and is provided outside of the region, and the anisotropic electroconductive binding material outside of the region has an unhardened part when the semiconductor device is mounted. 
     
     
       35. The liquid crystal display device according to claim 33, wherein another electroconductive layer is interposed between the first insulating film and the second insulating film. 
     
     
       36. The liquid crystal display device according to claim 35, wherein one of the first insulating film and the second insulating film is provided with another opening exposing a part of said another electroconductive layer. 
     
     
       37. The liquid crystal display device according to claim 33, wherein another electroconductive layer is interposed between the first insulating film and the second insulating film, a plurality of thin film transistors are arranged on said one side of the surface of said one of the pair of substrates, and one of (i) a gate line or a first pulled-out wiring line which is electrically connected with a gate terminal in a region where the semiconductor device is mounted and gate electrodes of the plurality of thin film transistors and (ii) a drain line or a second pulled-out wiring line which is electrically connected with a drain terminal in the region where the semiconductor device is mounted and drain electrodes of the plurality of thin film transistors, which is not formed of the electroconductive layer is formed of said another electroconductive layer. 
     
     
       38. The liquid crystal display device according to claim 33, wherein a plurality of electroconductive layers are provided, a plurality of thin film transistors are arranged on said one side of the surface of said one of the pair of substrates, and one of (i) a plurality of gate lines or a plurality of first pulled-out wiring lines which are electrically connected with gate terminals in a region where the semiconductor device is mounted and gate electrodes of the plurality of thin film transistors and (ii) a plurality of drain lines or a plurality of second pulled-out wiring lines which are electrically connected with drain terminals in the region where the semiconductor device is mounted and drain electrode of the plurality of thin film transistors, are formed of the electroconductive layers. 
     
     
       39. The liquid crystal display device according to claim 38, wherein further electroconductive layers are interposed between the first insulating film and the second insulating film, and wherein the plurality of gate lines are formed of the electroconductive layers, and the plurality of drain lines are formed of said further electroconductive layers. 
     
     
       40. The liquid crystal display device according to claim 38, wherein further electroconductive layers are interposed between the first insulating film and the second insulating film, and wherein the plurality of first pulled-out lines are formed of the electroconductive layers, and the plurality of second pulled-out lines are formed of said further electroconductive layers. 
     
     
       41. A mounting structure comprising:
 a substrate;   at least one electroconductive film provided on one side of a surface of the substrate;   an insulating film which is formed on the electroconductive film and which is provided with an opening exposing a part of the electroconductive film and whose internal stress is set to be a compression stress;   an anisotropic electroconductive binding material which is provided on one side of the part of the electroconductive film exposed by the opening and on the insulating film; and   a semiconductor device which has a plurality of electrodes and is disposed on the anisotropic electroconductive binding material, one of the plurality of electrodes being electrically connected with the electroconductive film through the anisotropic electroconductive binding material.   
     
     
       42. The mounting structure according to claim 41, wherein the anisotropic electroconductive binding material is provided in an entire region where the semiconductor device is mounted, and is provided outside of the region, and the anisotropic electroconductive binding material outside of the region has an unhardened part when the semiconductor device is mounted. 
     
     
       43. The mounting structure according to claim 41, wherein another electroconductive film is interposed between the substrate and the electroconductive film, and another insulating film is interposed between the electroconductive film and said another electroconductive film. 
     
     
       44. The mounting structure according to claim 41, wherein a plurality of electroconductive films are provided, a plurality of thin film transistors are arranged on said one side of the surface of the substrate, and one of (i) a plurality of gate lines or a plurality of first pulled-out wiring lines which are electrically connected with gate terminals provided in a region where the semiconductor device is mounted and gate electrodes of the thin film transistors and (ii) a plurality of drain lines or a plurality of second pulled-out wiring lines which are electrically connected with drain terminals in the region where the semiconductor device is mounted and drain electrodes of the thin film transistors, are formed of the electroconductive films. 
     
     
       45. A mounting structure comprising:
 a substrate;   an electroconductive layer provided on one side of the substrate;   an insulating layer which is formed on the electroconductive layer and which is provided with an opening exposing a part of the electroconductive layer and which includes a first insulating film and a second insulating film whose internal stresses are set to be compression stresses;   an anisotropic electroconductive binding material which is disposed above the part of the electroconductive layer exposed by the opening and on the insulating layer; and   a semiconductor device which has a plurality of electrodes and is disposed on the anisotropic electroconductive binding material, one of the plurality of electrodes being electrically connected with the electroconductive layer through the anisotropic electroconductive binding material.   
     
     
       46. The mounting structure according to claim 45, wherein the anisotropic electroconductive binding material is provided in an entire region where the semiconductor device is mounted, and is provided outside of the region, and the anisotropic electroconductive binding material outside of the region has an unhardened part when the semiconductor device is mounted. 
     
     
       47. The mounting structure according to claim 45, wherein another electroconductive layer is interposed between the first insulating film and the second insulating film. 
     
     
       48. The mounting structure according to claim 45, wherein a plurality of electroconductive layers are provided, a plurality of thin film transistors are arranged on the substrate, and one of (i) a plurality of gate lines or a plurality of first pulled-out wiring lines which are electrically connected with gate terminals provided in a region where the semiconductor device is mounted and gate electrodes of the thin film transistors and (ii) a plurality of drain lines or a plurality of second pulled-out wiring lines which are electrically connected with drain terminals in the region where the semiconductor device is mounted and drain electrodes of the thin film transistors, are formed of the electroconductive films.