Semiconductor light emitting device

Abstract

A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect-injected layer is made of material more fragile than the hetero-configuration. The dense defect-injected layer prevents defects injected into the hetero-configuration.

1. A semiconductor light emitting device, comprising:
 a first defect layer; 
 a first clad layer of a first conductive type formed on the first defect layer; 
 an active layer formed on the first clad layer; 
 a second clad layer of a second conductive type formed on the active layer; 
 a second defect layer formed on the second clad layer; 
 a first electrode electrically connected to the first clad layer; and 
 a second electrode electrically connected to the second clad layer. 
 
     
     
       2. A semiconductor light emitting device of  claim 1 , wherein the first defect layer has a higher defect density than the first clad layer. 
     
     
       3. A semiconductor light emitting device of  claim 1 , wherein the second defect layer has a higher defect density than the second clad layer. 
     
     
       4. A semiconductor light emitting device of  claim 1 , wherein the first defect layer is 10 −2  or more different in lattice constant from the first clad layer. 
     
     
       5. A semiconductor light emitting device of  claim 1 , wherein the second defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       6. A semiconductor light emitting device of  claim 1 , wherein the first defect layer is 10 nm or more in thickness. 
     
     
       7. A semiconductor light emitting device of  claim 1 , wherein the second defect layer is 10 nm or more in thickness. 
     
     
       8. A semiconductor light device of  claim 1 , further comprising, a current diffusion layer provided between the second defect layer and the second electrode. 
     
     
       9. A semiconductor light emitting device, comprising:
 a first layer having a first defect region; 
 a fist first clad layer of a first conductive type formed on the defect region of the first defect region layer; 
 an active layer formed on the first clad layer; 
 a second clad layer of a second conductive type formed on the active layer; 
 a second layer having a second defect region, the second defect regions layer formed on the second clad layer; 
 a first electrode electrically connected to the first clad layer; and 
 a second electrode electrically connected to the second clad layer. 
 
     
     
       10. A semiconductor light emitting device of  claim 9 , wherein the first defect region has a higher defect density than the first clad layer. 
     
     
       11. A semiconductor light emitting device of  claim 9 , wherein the second defect region has a higher defect density than the second clad layer. 
     
     
       12. A semiconductor light emitting device of  claim 9 , wherein the first defect region is 10 −2  or more different in lattice constant from the first clad layer. 
     
     
       13. A semiconductor light emitting device of  claim 9 , wherein the second defect region is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       14. A semiconductor light emitting device of  claim 9 , wherein the first defect region is 10 nm or more in thickness. 
     
     
       15. A semiconductor light emitting device of  claim 9 , wherein the second defect region is 10 nm or more in thickness. 
     
     
       16. A semiconductor light emitting device of  claim 9 , further comprising, a current diffusion layer provided between the second defect layer and the second electrode. 
     
     
       17. A semiconductor light emitting device of  claim 16 , wherein the current diffusion layer is transparent to light from the active layer. 
     
     
       18. A semiconductor light emitting device of  claim 8 , wherein the current diffusion layer is transparent to light from the active layer. 
     
     
       19. A semiconductor light emitting device, comprising:
 a first defect layer;   a first clad layer of a first conductivity type formed above the first defect layer;   an active layer formed on the first clad layer;   a second clad layer of a second conductivity type formed on the active layer;   a second defect layer formed above the second clad layer;   a first electrode electrically connected to the first clad layer; and   a second electrode electrically connected to the second clad layer.   
     
     
       20. A semiconductor light emitting device of claim 19, wherein the first defect layer has a higher defect density than the first clad layer. 
     
     
       21. A semiconductor light emitting device of claim 19, wherein the second defect layer has a higher defect density than the second clad layer. 
     
     
       22. A semiconductor light emitting device of claim 19, wherein the first defect layer is 10 −2  or more different in lattice constant from the first clad layer. 
     
     
       23. A semiconductor light emitting device of claim 19, wherein the second defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       24. A semiconductor light emitting device of claim 19, wherein the first defect layer is 10 nm or more in thickness. 
     
     
       25. A semiconductor light emitting device of claim 19, wherein the second defect layer is 10 nm or more in thickness. 
     
     
       26. A semiconductor light device of claim 19, further comprising, a current diffusion layer provided between the second defect layer and the second electrode. 
     
     
       27. A semiconductor light emitting device, comprising
 a first layer having a first defect region;   a first clad layer of a first conductivity type formed above the first layer;   an active layer formed on the first clad layer;   a second clad layer of a second conductivity type formed on the active layer;   a second layer having a second defect region, the second layer formed above the second clad layer;   a first electrode electrically connected lo the first clad layer; and   a second electrode electrically connected to the second clad layer.   
     
     
       28. A semiconductor light emitting device of claim 27, wherein the first defect region has a higher defect density than the first clad layer. 
     
     
       29. A semiconductor light emitting device of claim 27, wherein the second defect region has a higher defect density than the second clad layer. 
     
     
       30. A semiconductor light emitting device of claim 27, wherein the first defect region is 10 −2  or more different in lattice constant from the first clad layer. 
     
     
       31. A semiconductor light emitting device of claim 27, wherein the second defect region is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       32. A semiconductor light emitting device of claim 27, wherein the first defect region is 10 nm or more in thickness. 
     
     
       33. A semiconductor light emitting device of claim 27, wherein the second defect region is 10 nm or more in thickness. 
     
     
       34. A semiconductor light emitting device of claim 27, further comprising, a current diffusion layer provided between the second defect layer and the second electrode. 
     
     
       35. A semiconductor light emitting device of claim 34, wherein the current diffusion layer is transparent to light from the active layer. 
     
     
       36. A semiconductor light emitting device of claim 27, wherein the current diffusion layer is transparent to light from the active layer. 
     
     
       37. A semiconductor light emitting device, comprising:
 a substrate;   a first clad layer of a first conductive type on the substrate;   an active layer formed on the first clad layer;   a second clad layer of a second conductive type formed on the active layer;   a defect layer formed above the second clad layer;   a first electrode electrically connected to the first clad layer; and   a second electrode electrically connected to the second clad layer.   
     
     
       38. A semiconductor light emitting device of claim 37, wherein the defect layer has a higher defect density than the second clad layer. 
     
     
       39. A semiconductor light emitting device of claim 38, wherein the defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       40. A semiconductor light emitting device of claim 37, wherein the defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       41. A semiconductor light emitting device of claim 37, wherein the defect layer is 10 nm or more in thickness. 
     
     
       42. A semiconductor light emitting device of claim 38, wherein the defect layer is 10 nm or more in thickness. 
     
     
       43. A semiconductor light emitting device of claim 39, wherein the defect layer is 10 nm or more in thickness. 
     
     
       44. A semiconductor light emitting device of claim 40, wherein the defect layer is 10 nm or more in thickness. 
     
     
       45. A semiconductor light emitting device of claim 37, the first conductivity type is N type and the second conductivity type is P type, and the defect layer is P type. 
     
     
       46. A semiconductor light emitting device, comprising:
 a substrate;   a first clad layer of a first conductive type on the substrate;   an active layer formed on the first clad layer;   a second clad layer of a second conductive type formed on the active layer;   a semiconductor layer of a second conductive type formed above the second clad layer;   a first electrode electrically connected to the first clad layer;   a second electrode electrically connected to the semiconductor layer; and   a defect layer formed above the second clad layer and below the semiconductor layer.   
     
     
       47. A semiconductor light emitting device of claim 46, wherein the defect layer has a higher defect density than the second clad layer. 
     
     
       48. A semiconductor light emitting device of claim 47, wherein the defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       49. A semiconductor light emitting device of claim 46, wherein the defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       50. A semiconductor light emitting device of claim 46, wherein the defect layer is 10 nm or more in thickness. 
     
     
       51. A semiconductor light emitting device of claim 47, wherein the defect layer is 10 nm or more in thickness. 
     
     
       52. A semiconductor light emitting device of claim 46, the first conductive type is N type and the second conductive type is P type, and the defect layer has a P type conductive type. 
     
     
       53. A semiconductor light emitting device of claim 46, wherein the semiconductor layer of the second conductive type is transparent to a light emitted from the active layer. 
     
     
       54. A semiconductor light emitting device of claim 46, wherein the semiconductor layer of the second conductive type is made of different material to the defect layer. 
     
     
       55. A semiconductor light emitting device of claim 53, wherein the semiconductor layer of the second conductive type is made of different material to the defect layer. 
     
     
       56. A semiconductor light emitting device of claim 46, wherein the defect layer includes InGaP. 
     
     
       57. A semiconductor light emitting device of claim 53, wherein the defect layer includes InGaP. 
     
     
       58. A semiconductor light emitting device of claim 54, wherein the defect layer includes InGaP. 
     
     
       59. A semiconductor light emitting device of claim 55, wherein the defect layer includes InGaP. 
     
     
       60. A semiconductor light emitting device, comprising:
 a first semiconductor layer of a first conductive type;   a first clad layer of the first conductive type formed above the first semiconductor layer;   an active layer formed on the first clad layer;   a second clad layer of a second conductive type formed on the active layer;   a second semiconductor layer of a second conductive type formed above the second clad layer;   a first electrode electrically connected to the first clad layer;   a second electrode electrically connected to the second clad layer; and   a defect layer formed above the second clad layer and below the second semiconductor layer,   wherein the first semiconductor layer and the second semiconductor layer are transparent to a light emitted from the active layer.   
     
     
       61. A semiconductor light emitting device of claim 60, wherein the first semiconductor layer, the first clad layer, the active layer, the second clad layer, the defect layer and the second semiconductor layer are grown on a semiconductor substrate, a portion of the substrate is removed after the first semiconductor layer, the first clad layer, the active layer, the second clad layer and the second semiconductor layer are grown. 
     
     
       62. A semiconductor light emitting device of claim 60, wherein the defect layer has a higher defect density than the second clad layer. 
     
     
       63. A semiconductor light emitting device of claim 60, wherein the defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       64. A semiconductor light emitting device of claim 60, wherein the defect layer is 10 nm or more in thickness. 
     
     
       65. A semiconductor light emitting device of claim 60, wherein the first conductive type is N type and the second conductive type is P type. 
     
     
       66. A semiconductor light emitting device of claim 60, wherein the defect layer is directly formed on the second clad layer. 
     
     
       67. A semiconductor light emitting device of claim 60, wherein the defect layer is directly formed on the second clad layer, and the second semiconductor layer is directly formed on the defect layer. 
     
     
       68. A semiconductor light emitting device of claim 61, wherein the semiconductor substrate is GaAs substrate. 
     
     
       69. A semiconductor light emitting device of claim 61, wherein the defect layer has a higher defect density than the second clad layer. 
     
     
       70. A semiconductor light emitting device of claim 61, wherein the defect layer is 10 −2  or more different in lattice constant from the second clad layer. 
     
     
       71. A semiconductor light emitting device of claim 61, wherein the defect layer is 10 nm or more in thickness. 
     
     
       72. A semiconductor light emitting device of claim 61, wherein the first conductive type is N type and the second conductive type is P type. 
     
     
       73. A semiconductor light emitting device of claim 61, wherein the substrate is N type GaAs substrate. 
     
     
       74. A semiconductor light emitting device of claim 61, wherein the defect layer is directly formed on the second clad layer. 
     
     
       75. A semiconductor light emitting device of claim 61, wherein the defect layer is directly formed on the second clad layer, and the second semiconductor layer is directly formed on the defect layer. 
     
     
       76. A semiconductor light emitting device of claim 61, wherein the first semiconductor layer, the first clad layer, the active layer, the second clad layer, the defect layer and the second semiconductor layer are grown in this order.