P
USRE43319EExpiredUtilityPatentIndex 45

Light-emitting component and process for its preparation

Assignee: BLOCHWITZ-NIMOTH JANPriority: Aug 27, 2003Filed: Nov 4, 2009Granted: Apr 24, 2012
Est. expiryAug 27, 2023(expired)· nominal 20-yr term from priority
Inventors:BLOCHWITZ-NIMOTH JANSORIN GILDAS
H10K 50/14H10K 50/155H10K 50/15H10K 85/611H10K 85/1135H10K 85/631H10K 85/30H10K 71/30H10K 50/171H10K 50/11H10K 50/165
45
PatentIndex Score
0
Cited by
39
References
24
Claims

Abstract

A light-emitting component comprising organic layers and having several layers between a base contact and a cover contact, the corresponding process for its preparation. At least one polymer layer and two molecular layers are arranged, so that when the cover contact is a cathode, the layer adjacent to the cover contact is designed as an electron-transporting molecular layer and is doped with an organic or inorganic donor, the electron-transporting layer comprising a principal organic substance and a donor-type doping substance, the molecular weight of the dopant being more than 200 g/mole. When the cover contact is an anode, the layer adjacent to the cover contact is designed as a p-doped hole-transporting molecular layer and is doped with an organic or inorganic acceptor, the hole-transporting layer comprising a principal organic substance and an acceptor-like doping substance, the molecular weight of the dopant being more than 200 g/mole.

Claims

exact text as granted — not AI-modified
1. A light-emitting component comprising organic layers, consisting of several layers between a base contact on a substrate and a cover contact, having layers formed as a polymer layer consisting of polymer, and layers formed as a molecular layer consisting of vacuum-deposited small molecules,
 wherein the light-emitting component comprises at least one polymer layer and at least two molecular layers, 
 wherein the cover contact is a cathode, the layer adjacent to the cover contact is a doped layer formed as an electron-transporting molecular layer and doped with an organic donor dopant, the n-type dopant doped layer comprising a principal organic substance and a donor-type doping substance, and the molecular weight of the dopant is more than about 200 g/mole, and 
 wherein the conductivity of a non-doped intermediate layer between the base contact on the substrate and the cover contact is lower by at least a half order of magnitude than the conductivity of the doped layer. 
 
     
     
       2. The light-emitting component according to  claim 1  wherein the donor-type doping substance in the electron-transporting layer is tungsten paddlewheel [W 2 (hpp) 4 ] with hpp=1, 3, 4, 6, 7, 8-hexahydro-2H-pyrimido-[1, 2-a]-pyrimidine. 
     
     
       3. The light-emitting component according to  claim 1 , wherein the doped layer has a conductivity in the range of 1E-7 S/cm to 1E-3 S/cm. 
     
     
       4. The light-emitting component according to  claim 1 , wherein the doped layer has a conductivity in the range of 1E-6 S/cm to 5E-5 S/cm. 
     
     
       5. The light-emitting component according to  claim 1 , wherein the doped layer has a thickness in the range of 40 nm to 500 nm. 
     
     
       6. The light-emitting component according to  claim 1 , wherein the doped layer has a thickness in the range of 50 nm to 300 nm. 
     
     
       7. The light-emitting component according to  claim 1 , wherein a non-doped intermediate layer between the base contact on the substrate and the cover contact has a thickness in the range of 2 nm to 30 nm. 
     
     
       8. The light-emitting component according to  claim 1 , wherein a non-doped intermediate layer between the base contact on the substrate and the cover contact has a thickness in the range of 5 nm to 15 nm. 
     
     
       9. The light-emitting component according to  claim 1 , wherein a non-doped layer between the base contact on the substrate and the cover contact is designed to be thinner than the doped layer between the base contact on the substrate and the cover contact. 
     
     
       10. The light-emitting component according to  claim 1 , wherein the donor dopant has an ionization potential of less than 4.1 eV. 
     
     
       11. The light-emitting component according to  claim 1 , wherein the concentration of organic dopant relative to that of the doped layer's host material is between 1:1000 and 1:20. 
     
     
       12. The light-emitting component according to  claim 1 , wherein the concentration of organic dopant relative to that of the doped layer's host material is between 1:1000 and 3:1. 
     
     
       13. A light-emitting component comprising organic layers, consisting of several layers between a base contact on a substrate and a cover contact, having layers formed as a polymer layer consisting of polymer, and layers formed as a molecular layer consisting of vacuum-deposited small molecules,
 wherein the light-emitting component comprises at least two polymer layers and at least two molecular layers, 
 wherein the cover contact is an anode, the layer adjacent to the cover contact is a doped layer formed as a p-doped hole-transporting molecular layer and doped with an organic acceptor dopant, the dopant doped layer comprising a principal organic substance and an acceptor-type doping substance and the molecular weight of the dopant is more than 200 g/mole, and 
 wherein the conductivity of a non-doped intermediate layer between the base contact on the substrate and the cover contact is lower by at least a half order of magnitude than the conductivity of the doped layer between the base contact on the substrate and the cover contact. 
 
     
     
       14. The light-emitting component according to  claim 13  wherein the doped layer has a thickness in the range of 40 nm to 500 nm. 
     
     
       15. The light-emitting component according to  claim 13  wherein the doped layer has a thickness in the range of 50 nm to 300 nm. 
     
     
       16. The light-emitting component according to  claim 13  wherein a non-doped intermediate layer between the base contact on the substrate and the cover contact has a thickness in the range of 2 nm to 30 nm. 
     
     
       17. The light-emitting component according to  claim 13  wherein a non-doped intermediate layer between the base contact on the substrate and the cover contact has a thickness in the range of 5 nm to 15 nm. 
     
     
       18. The light-emitting component according to  claim 13  wherein a non-doped layer between the base contact on the substrate and the cover contact is designed to be thinner than the doped layer. 
     
     
       19. The light-emitting component according to  claim 13  wherein the organic dopant concentration relative to that of the doped layer's host material is between 1:1000 and 1:20. 
     
     
       20. The light-emitting component according to  claim 13  wherein the dopant concentration relative to that of the doped layer's host material is between 1:1000 and 3:1. 
     
     
       21. The light-emitting component of  claim 1  wherein the at least one polymer layer is a light emitting layer. 
     
     
       22. The light-emitting component of  claim 13  wherein the at least one polymer layer is a light emitting layer. 
     
     
       23. The light-emitting component of  claim 13  wherein the donor-type doping substance in the electron-transporting layer is tungsten paddlewheel [W 2 (hpp) 4 ] with hpp=1, 3, 4, 6, 7, 8-hexahydro-2H-pyrimido-[ 1,2 -a]-pyrimidine. 
     
     
       24. The light-emitting component of  claim 13 , wherein the doped layer has a conductivity in the range of 1E-7 S/cm to 1E-3 S/cm.

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