P
USRE43868EExpiredUtilityPatentIndex 46

Nanofiber surface based capacitors

Assignee: CHOW CALVIN Y HPriority: Mar 18, 2004Filed: Dec 16, 2010Granted: Dec 25, 2012
Est. expiryMar 18, 2024(expired)· nominal 20-yr term from priority
Inventors:CHOW CALVIN Y HDUBROW ROBERT
H10D 1/711H01G 4/33H05K 2201/026H01G 4/203H01G 4/005H05K 1/162H01G 4/008H01G 9/04H01G 11/46H01G 4/06H01G 11/36Y02E60/13
46
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Cited by
214
References
17
Claims

Abstract

This invention provides navel capacitors comprising nanofiber enhanced surface area substrates and structures comprising such capacitors, as well as methods and uses for such capacitors.

Claims

exact text as granted — not AI-modified
1. A device comprising first and second opposing electrodes and a dielectric layer disposed between the first and second electrodes, wherein the dielectric layer comprises a plurality of nanofibers disposed within a dielectric material, wherein the nanofibers comprise a core and one or more coatings disposed about the core. 
     
     
       2. The device of  claim 1 , wherein the one or more coatings comprise a nitride or a carbide. 
     
     
       3. The device of  claim 1 , wherein the core of the plurality of nanofibers comprises silicon or a silicon containing compound. 
     
     
       4. The device of  claim 1 , wherein the core of the plurality of nanofibers comprises ZnO, Si or SiO 2 . 
     
     
       5. The device of  claim 1 , wherein the dielectric material comprises a nonconductive material. 
     
     
       6. The device of  claim 1 , wherein the dielectric material comprises an oxide, a nitride, a polymer, a ceramic, a resin, a porcelain, a mica containing material, a glass, a rare earth oxide, or a gas. 
     
     
       7. The device of  claim 1 , wherein the dielectric material comprises an oxide layer. 
     
     
       8. The device of  claim 1 , wherein the dielectric material comprises a naturally occurring oxide layer. 
     
     
       9. The device of  claim 1 , wherein the dielectric material comprises silicon oxide. 
     
     
       10. The device of  claim 9 , wherein the core of the plurality of nanowires comprise a silicon or silicon containing compound. 
     
     
       11. The device of  claim 2  or  10 , wherein the one or more coatings includes a nitride material comprising AlN, GaN, SiN or BN. 
     
     
       12. The device of  claim 2  or  10 , wherein the one or more coatings includes a carbide material comprising SiC, TiC, Tungsten carbide or boron carbide. 
     
     
       13. The device of  claim 1 , wherein the plurality of nanofibers comprise a plurality of nanowires. 
     
     
       14. The device of  claim 1 , wherein the plurality of nanofibers are grown on a surface of at least one of said first and second electrodes. 
     
     
       15. The device of  claim 14 , wherein the plurality of nanofibers are grown by a VLS growth process. 
     
     
       16. The device of  claim 1 , wherein the plurality of nanofibers are deposited on a surface of at least one of said first and second electrodes. 
     
     
       17. A device comprising first and second opposing electrodes and a dielectric layer disposed between the first and second electrodes, wherein the dielectric layer comprises a plurality of nanofibers disposed within a dielectric material, wherein the nanofibers comprise a core.

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