Substrate-alignment using detector of substrate material

Abstract

Methods and apparatuses are provided for positioning a substrate having a target that may be located on either the front-side or the backside of the substrate. The optical detector that views the target contains a signal-generating material that is substantially identical to the substrate material.

What is claimed is: 
     
       1. A method for positioning a substrate, comprising:
 (a) holding a substrate having a first surface and a reflective feature at a position that is separated from the first surface by a first layer of material having at least partial transparency to light of a selected wavelength; 
 (b) directing light of the selected wavelength toward the reflective feature; and 
 (c) using an optical image detector to intercept light reflected by the feature to generate a sufficiently analyzable image signal to allow a signal-analyzing system to recognize and to locate the position of the reflective feature with a degree of precision sufficient for substrate alignment, 
 wherein the optical image detector comprises a signal-generating material that is substantially identical in composition to the first layer material. 
 
     
     
       2. The method of  claim 1 , wherein light of the selected wavelength is directed through the substrate first surface and the first layer toward the reflective feature, which, in turn reflects the light through the first layer and the first surface toward the optical image detector. 
     
     
       3. The method of  claim 2 , wherein the signal-analyzing system is a machine-vision system capable of recognizing the feature from the detector signal. 
     
     
       4. The method of  claim 3 , wherein the image signal exhibits a signal-to-background ratio that is sufficient to determine the position of the reflective feature to a precision of at least ±0.5 micrometers. 
     
     
       5. The method of  claim 3 , wherein the reflected light results in the image signal having a signal to electrical noise ratio of at least 3:1. 
     
     
       6. The method of  claim 1 , wherein the image signal-generating material of the optical image detector and the material of the first layer each consists essentially of silicon. 
     
     
       7. The method of  claim 1 , wherein the selected wavelength is contained in a spectral bandwidth of less than about 10 nm. 
     
     
       8. The method of  claim 1 , wherein the selected wavelength is an infrared wavelength. 
     
     
       9. The method of  claim 8 , wherein the selected wavelength is about 0.8 μm to about 1.1 μm. 
     
     
       10. The method of  claim 1 , wherein the substrate is a precursor to a light detector or image detector. 
     
     
       11. The method of  claim 1 , wherein the first layer has a thickness of about 50 micrometers to about 750 micrometers. 
     
     
       12. The method of  claim 1 , wherein the reflective feature is located at a second surface that opposes the first surface. 
     
     
       13. The method of  claim 12 , wherein the substrate further comprises a second layer and the reflective feature is interposed between the first and second layers. 
     
     
       14. The method of  claim 13 , wherein each of the first and second layers comprises a different material. 
     
     
       15. The method of  claim 13 , wherein the second layer exceeds the first layer in thickness. 
     
     
       16. An apparatus for positioning a substrate, comprising:
 a substrate having a first surface and a reflective feature at a position that is separated from the first surface by a first layer of material having at least partial transparency to light of a selected wavelength; 
 a substrate holder holding the substrate; 
 a light source for generating light of the selected wavelength, wherein the light source is positioned to direct light of the selected wavelength to the reflective feature; 
 an optical image detector positioned to intercept light reflected by the reflective feature, wherein the image detector comprises a signal-generating material that is substantially identical in composition to the first layer material of the first layer and is capable of generating an image signal from the intercepted light; and 
 a machine vision system in signal-receiving relation to the image detector, wherein the machine vision system is capable of analyzing the image signal to recognize the reflective feature and to determine the position of the reflective feature with a sufficient degree of precision. 
 
     
     
       17. The apparatus of  claim 16 , wherein the light source is positioned to direct light of the selected wavelength through the first surface of the substrate and first layer toward the reflective feature, and the optical image detector is positioned to intercept light reflected by the reflective feature through the first layer and the first surface toward the optical image detector. 
     
     
       18. The apparatus of  claim 17 , wherein the machine vision system has a capability to determine the position of the reflective feature to a precision of at least ±0.5 micrometers. 
     
     
       19. The apparatus of  claim 17 , wherein the selected wavelength produces an image signal that corresponds to the reflective feature and has a signal to electrical noise ratio of at least 3:1. 
     
     
       20. The apparatus of  claim 16 , wherein each of the signal-generating and first layer materials comprises silicon. 
     
     
       21. The apparatus of  claim 20 , wherein each of the signal-generating and first layer materials consists essentially of silicon. 
     
     
       22. The apparatus of  claim 16 , wherein the light of the selected wavelength is contained in a spectral bandwidth of less than about 10 nm. 
     
     
       23. The apparatus of  claim 16 , wherein the selected wavelength is an infrared wavelength. 
     
     
       24. The apparatus of  claim 23 , wherein the selected wavelength is about 0.8 μm to about 1.1 μm. 
     
     
       25. The apparatus of  claim 16 , wherein the substrate is a precursor to a light detector or an image detector. 
     
     
       26. The apparatus of  claim 16 , wherein the first layer has a thickness of about 50 micrometers to about 200 micrometers. 
     
     
       27. The apparatus of  claim 16 , wherein the reflective feature is located at a second surface that opposes the first surface. 
     
     
       28. The apparatus of  claim 27 , wherein the substrate further comprises a second layer and the reflective feature is interposed between the first and second layers. 
     
     
       29. The apparatus of  claim 28 , wherein each of the first and second layers comprises a different material. 
     
     
       30. The apparatus of  claim 28 , wherein the second layer exceeds the first layer in thickness. 
     
     
       31. A method for positioning a substrate, comprising:
 (a) holding a substrate having a first surface and a feature at a position that is separated from the first surface by a first layer of material, wherein the material of the first layer has at least partial transparency to light of a selected wavelength and the feature has a transparency different from that of the material of the first layer; 
 (b) directing light of the selected wavelength through the substrate; and 
 (c) using an optical image detector to intercept light transmitted through the substrate to generate a sufficiently analyzable image signal to allow a signal-analyzing system to recognize and locate the position of the reflective feature with a degree of precision sufficient for substrate alignment, 
 wherein the optical image detector comprises a signal-generating material that is substantially identical in composition to the material of the first layer. 
 
     
     
       32. A method for positioning a substrate, comprising:
 (a) holding a substrate having a first surface and a reflective feature at a position that is separated from the first surface by a first layer of material having at least partial transparency to light of a selected wavelength;   (b) directing light of the selected wavelength toward the reflective feature; and   (c) using an optical image detector to intercept light reflected by the feature to generate a sufficiently analyzable image signal to allow a signal-analyzing system to recognize and to locate the position of the reflective feature with a degree of precision sufficient for substrate alignment,   
       wherein the optical image detector comprises a signal-generating material that has a signal to noise ratio of at least 3:1. 
     
     
       33. The method of claim 32, wherein light of the selected wavelength is directed through the substrate first surface and the first layer toward the reflective feature, which, in turn, reflects the light through the first layer and the first surface toward the optical image detector. 
     
     
       34. The method of claim 33, wherein the signal-analyzing system is a machine-vision system capable of recognizing the feature from the detector signal. 
     
     
       35. The method of claim 34, wherein the image signal exhibits a signal-to-background ratio that is sufficient to determine the position of the reflective feature to a precision of at least ±0.5 micrometers. 
     
     
       36. The method of claim 32, wherein the optical image detector is comprised of Si, Ge, SiC, GaAs, GaN or InP. 
     
     
       37. The method of claim 32, wherein the image signal-generating material of the optical image detector and the material of the first layer each consists of different materials. 
     
     
       38. The method of claim 32, wherein the material of the first layer consists of silicon and the image signal-generating material of the optical image detector consists of Ge, SiC, GaAs, GaN or InP. 
     
     
       39. The method of claim 32, wherein the selected wavelength is contained in a spectral bandwidth of less than about 10 nm. 
     
     
       40. The method of claim 32, wherein the selected wavelength is an infrared wavelength. 
     
     
       41. The method of claim 40, wherein the selected wavelength is about 0.8 μm to about 1.1 μm. 
     
     
       42. The method of claim 32, wherein the substrate is a precursor to a light detector or image detector. 
     
     
       43. The method of claim 32, wherein the first layer has a thickness of about 50 micrometers to about 750 micrometers. 
     
     
       44. The method of claim 32, wherein the reflective feature is located at a second surface that opposes the first surface. 
     
     
       45. The method of claim 44, wherein the substrate further comprises a second layer and the reflective feature is interposed between the first and second layers. 
     
     
       46. The method of claim 45, wherein each of the first and second layers comprises a different material. 
     
     
       47. The method of claim 45, wherein the second layer exceeds the first layer in thickness. 
     
     
       48. An apparatus for positioning a substrate, comprising:
 a substrate having a first surface and a reflective feature at a position that is separated from the first surface by a first layer of material having at least partial transparency to light of a selected wavelength;   a substrate holder holding the substrate;   a light source for generating light of the selected wavelength, wherein the light source is positioned to direct light of the selected wavelength to the reflective feature;   an optical image detector positioned to intercept light reflected by the reflective feature, wherein the image detector comprises a signal-generating material that has a signal to noise ratio of at least 3:1 and is capable of generating an image signal from the intercepted light; and   a machine vision system in signal-receiving relation to the image detector,   
       wherein the machine vision system is capable of analyzing the image signal to recognize the reflective feature and to determine the position of the reflective feature with a sufficient degree of precision. 
     
     
       49. The apparatus of claim 48, wherein the light source is positioned to direct light of the selected wavelength through the first surface of the substrate and first layer toward the reflective feature, and the optical image detector is positioned to intercept light reflected by the reflective feature through the first layer and the first surface toward the optical image detector. 
     
     
       50. The apparatus of claim 49, wherein the machine vision system has a capability to determine the position of the reflective feature to a precision of at least ±0.5 micrometers. 
     
     
       51. The apparatus of claim 49, wherein the selected wavelength produces an image signal that corresponds to the reflective feature. 
     
     
       52. The apparatus of claim 48 wherein the optical image detector is comprised of one of Si, Ge, SiC, GaAs, GaN or InP. 
     
     
       53. The apparatus of claim 48, wherein each of the signal generating and first layer materials comprise a different material. 
     
     
       54. The apparatus of claim 48, wherein each of the signal-generating and first layer materials each consists essentially of silicon. 
     
     
       55. The apparatus of claim 52 wherein the first layer material consists of Si. 
     
     
       56. The apparatus of claim 48, wherein the light of the selected wavelength is contained in a spectral bandwidth of less than about 10 nm. 
     
     
       57. The apparatus of claim 48, wherein the selected wavelength is an infrared wavelength. 
     
     
       58. The apparatus of claim 57, wherein the selected wavelength is about 0.8 μm to about 1.1 μm. 
     
     
       59. The apparatus of claim 48, wherein the substrate is a precursor to a light detector or an image detector. 
     
     
       60. The apparatus of claim 48, wherein the first layer has a thickness of about 50 micrometers to about 200 micrometers. 
     
     
       61. The apparatus of claim 48, wherein the reflective feature is located at a second surface that opposes the first surface. 
     
     
       62. The apparatus of claim 61, wherein the substrate further comprises a second layer and the reflective feature is interposed between the first and second layers. 
     
     
       63. The apparatus of claim 62, wherein the second layer exceeds the first layer in thickness. 
     
     
       64. A method for positioning a substrate, comprising:
 (a) holding a substrate having a first surface and a feature at a position that is separated from the first surface by a first layer of material, wherein the material of the first layer has at least partial transparency to light of a selected wavelength and the feature has a transparency different from that of the material of the first layer;   (b) directing light of the selected wavelength through the substrate; and   (c) using an optical image detector to intercept light transmitted through the substrate to generate a sufficiently analyzable image signal to allow a signal-analyzing system to recognize and locate the position of the reflective feature with a degree of precision sufficient for substrate alignment,   
       wherein the optical image detector comprises a signal-generating material that has a composition that is different from the material of the first layer. 
     
     
       65. A method as in claim 64 wherein the material of the first layer is Si and the signal generating material is one of Ge, SiC, GaAs, GaN or InP.