Semiconductor device having an improved connection arrangement between a semiconductor pellet and base substrate electrodes and a method of manufacture thereof

Abstract

A semiconductor device comprising a semiconductor pellet mounted on a pellet mounting area of the main surface of a base substrate, in which first electrode pads arranged on the back of the base substrate are electrically connected to bonding pads arranged on the main surface of the semiconductor pellet. The base substrate is formed of a rigid substrate, and its first electrode pads are electrically connected to the second electrode pads arranged on its reverse side. The semiconductor pellet is mounted on the pellet mounting area of the main surface of the base substrate, with its main surface downward, and its bonding pads are connected electrically with the second electrode pads of the base substrate through bonding wires passing through slits formed in the base substrate.

What is claimed is: 
     
       1. A semiconductor device comprising:
 (a) a rigid substrate having a first main surface and a second main surface opposite to the first main surface;   (b) a semiconductor pellet mounted on the first main surface of the rigid substrate, the semiconductor pellet having a plurality of semiconductor circuit elements and a plurality of bonding pads;   (c) a plurality of electrode pads formed on the second main surface of the rigid substrate; and   (d) a plurality of bonding wires for electrically connecting the bonding pads of the semiconductor pellet with the electrode pads;   wherein the semiconductor pellet is mounted facedown on the rigid substrate, the rigid substrate has slits that extend from the first main surface to the second main surface and expose the bonding pads of the semiconductor pellet, the bonding wires extend through the slits in the rigid substrate to connect the bonding pads and the electrode pads, and bump electrodes are formed on said electrode pads.   
     
     
       2. A semiconductor device according to  claim 1 , wherein the bonding pads are arranged at the periphery of the semiconductor pellet and the slits are formed along the directions of rows of the bonding pads. 
     
     
       3. A semiconductor device according to  claim 2 , wherein the electrode pads are located on both sides of the slits. 
     
     
       4. A semiconductor device according to  claim 3  wherein the electrode pads located on one side of the slits and under the semiconductor pellet are power supply pads, and the electrode pads located on the other side of the slits and outside the semiconductor pellet are signal pads. 
     
     
       5. A semiconductor device according to  claim 1 , further comprising a first resin sealing body covering the semiconductor pellet. 
     
     
       6. A semiconductor device according to  claim 5 , further comprising a second resin sealing body formed in the slits and covering the bonding wires. 
     
     
       7. A semiconductor device according to  claim 1 , wherein said rigid substrate is formed by glass fibers impregnated with epoxy resin. 
     
     
       8. A method of manufacturing a semiconductor device in which a semiconductor pellet is mounted on a pellet mounting area of the main surface of a rigid base substrate and in which first electrode pads arranged on the back of the rigid base substrate are electrically connected to bonding pads arranged on the main surface of the semiconductor pellet, said method comprising:
 a step of mounting the semiconductor pellet, with its main surface downward, on the pellet mounting area of the main surface of the rigid base substrate   a step of electrically connecting the bonding pads of the semiconductor pellet and second electrode pads electrically connected to the first electrode pads of the rigid base substrate and arranged on the back of the rigid base substrate through bonding wires passing through slits formed on the rigid base substrate; and   a step of forming bump electrodes on the first electrode pads.   
     
     
       9. A method of manufacturing a semiconductor device according to  claim 9 , further comprising a step of forming by transfer molding a resin sealing body that covers the periphery of the main surface of the rigid base substrate and seals the bonding wires, after the step of electrically connecting the bonding wires. 
     
     
       10. A semiconductor device according to  claim 10 , wherein said rigid substrate is formed by glass fibers impregnated with polyimide resin. 
     
     
       11. A semiconductor device comprising:
 (a) a rigid substrate having a first main surface and a second main surface opposite to the first main surface;   (b) a semiconductor pellet mounted on the first main surface of the rigid substrate, the semiconductor pellet having a plurality of semiconductor circuit elements and a plurality of bonding pads;   (c) a plurality of electrode pads formed on the second main surface of the rigid substrate; and   (d) a plurality of bonding wires for electrically connecting the bonding pads of the semiconductor pellet with the electrode pads;   wherein the semiconductor pellet is mounted facedown on the rigid substrate, the rigid substrate has slits that extend from the first main surface to the second main surface and expose the bonding pads of the semiconductor pellet, and the bonding wires extend through the slits in the rigid substrate to connect the bonding pads and the electrode pads;   wherein the bonding pads are arranged at the periphery of the semiconductor pellet and the slits are formed along the directions of rows of the bonding pads.   
     
     
       12. A semiconductor device according to  claim 11 , wherein the electrode pads are located on both sides of the slits. 
     
     
       13. A semiconductor device according to  claim 12 , wherein the electrode pads located on one side of the slits and under the semiconductor pellet are power supply pads, and the electrode pads located on the other side of the slits and outside the semiconductor pellet are signal pads. 
     
     
       14. A semiconductor device comprising:
 a substrate of a quadrilateral shape having a first pair of opposed edges and a second pair of opposed edges, said substrate having a first main surface, a second main surface opposite to said first main surface and a first slit and a second slit each extending from said first main surface to said second main surface, said first slit extending along one of said first pair of opposed edges, said second slit extending along the other of said first pair of opposed edges, said substrate having first electrode pads on said second main surface in a first area between said first and second slits, second electrode pads on said second main surface in a second area between said first slit and said one of the first pair of opposed edges, and third electrode pads on said second main surface in a third area between said second slit and the other of the first pair of opposed edges;   a semiconductor pellet having a main surface with semiconductor elements and bonding pads, said semiconductor pellet being mounted on said first main surface of substrate such that said bonding pads are arranged to be in line with said first and second slits;   bonding wires extending through said first and second slits in said substrate and electrically connecting said bonding pads and said first to third electrode pads, respectively;   a resin member sealing said semiconductor pellet and said bonding wires; and   bump electrodes arranged on said second main surface of said substrate in said first to third areas in a direction of said first pair of opposed edges and being electrically connected with said first to third electrode pads,   wherein said bump electrodes in said second and third areas are arranged to form plural rows in a direction of at least one of said second pair of opposed edges, respectively.   
     
     
       15. A semiconductor device according to  claim 14 , wherein said semiconductor pellet has a quadrilateral shape and has a third pair of opposed edges and a fourth pair of opposed edges, wherein said bonding pads are arranged in a peripheral portion of said main surface and extend along said third pair of opposed edges. 
     
     
       16. A semiconductor device according to  claim 15 , wherein said semiconductor pellet is mounted on said first main surface opposite to said first area, wherein said substrate has a larger size than that of said semiconductor pellet, and wherein said bump electrodes in said second and third areas are located outside said third pair of opposed edges. 
     
     
       17. A semiconductor device according to  claim 14 , wherein the number of said bump electrodes in said second and third areas is larger than the number of said bump electrodes in said first area. 
     
     
       18. A semiconductor device according to  claim 14 , wherein said semiconductor pellet has a rear surface opposite to said main surface, and wherein said rear surface of said semiconductor pellet is exposed from said resin member. 
     
     
       19. A semiconductor device according to  claim 14 , wherein the number of said bump electrodes in said second area is larger than the number of said bump electrodes in said first area. 
     
     
       20. A semiconductor device according to  claim 14 , wherein said semiconductor pellet has a rear surface opposite to said main surface, and wherein said rear surface of said semiconductor pellet is exposed from said resin member. 
     
     
       21. A semiconductor device according to  claim 14 , wherein said first electrode pads extend along said first and second slits, respectively, said second electrode pads extend along said first slit, and said third electrode pads extend along said second slit, wherein said first to third electrode pads are arranged at a first pitch, respectively, wherein said bonding pads in said first and second slits are arranged at a second pitch which is smaller than said first pitch, respectively, wherein said bonding wires in said first slit alternately connect said bonding pads in said first slit with said first and second electrode pads, and wherein said bonding wires in said second slit alternately connect said bonding pads in said second slit with said first and third electrode pads. 
     
     
       22. A semiconductor device comprising:
 a substrate of a quadrilateral shape having first to fourth edges, said substrate having a first main surface, a second main surface opposite to said first main surface and first to fourth slits extending from said first main surface to said second main surface, said first to fourth slits respectively extending along said first to fourth edges and defining a first area of said substrate surrounded by said first to fourth slits and a second area of said substrate extending outside said first to fourth slits, said substrate having first electrode pads on said second main surface in said first area and second electrode pads on said second main surface in said second area;   a semiconductor pellet having a main surface with semiconductor elements and bonding pads, said semiconductor pellet being mounted on said first main surface of substrate such that said bonding pads are arranged in line with said first to fourth slits;   bonding wires extending through said first to fourth slits in said substrate and electrically connecting said bonding pads and said first and second electrode pads, respectively;   a resin member sealing said semiconductor pellet and said bonding wires; and   bump electrodes arranged on said second main surface of said substrate in said first and second areas and being electrically connected with said first and second electrode pads,   wherein said bump electrodes in said second area are arranged to form a plurality of rows such that said plurality of rows are formed relative to one another to surround said first area of substrate.   
     
     
       23. A semiconductor device according to  claim 22 , wherein said semiconductor pellet has a quadrilateral shape and has first to fourth edges, wherein said bonding pads are arranged in a peripheral portion of said main surface and extend along said first to fourth edges of said semiconductor pellet. 
     
     
       24. A semiconductor device according to  claim 23 , wherein said semiconductor pellet is mounted on said first main surface opposite to said first area, wherein said substrate has a larger size than that of said semiconductor pellet, and wherein said bump electrodes in said second area are located outside said first to fourth edges of said semiconductor pellet. 
     
     
       25. A semiconductor device according to  claim 22 , wherein said first and second electrode pads extending along said first to fourth slits, respectively, and are arranged at a first pitch, wherein said bonding pads extend along said first and second electrode pads and are arranged at a second pitch which is smaller than said first pitch, and wherein said bonding wires alternately connect said bonding pads with said first and second electrode pads. 
     
     
       26. A method of manufacturing a semiconductor device comprising the steps of:
 (a) providing a semiconductor pellet having a circuit system and bonding pads formed on a main surface thereof;   (b) providing a substrate having a first surface, a second surface opposite to said first surface, a slit passing through said substrate from said first surface to said second surface and first electrode pads formed on said second surface, and including glass fibers and resin, said first electrode pads being arranged at both sides of said slit in a plan view;   (c) mounting said semiconductor pellet on said substrate via an insulating layer such that said main surface of said semiconductor pellet faces said first surface of said substrate, and such that the semiconductor pellet is fixed to said first surface of said substrate via said insulating layer, and such that said bonding pads are arranged inside of said slit in a plan view, and such that a portion of said slit is arranged outside of said semiconductor pellet in a plan view;   (d) after said step (c), connecting said bonding pads of said semiconductor pellet with said first electrode pads of said substrate via bonding wires running through said slit, respectively;   (e) forming a resin sealing body sealing said bonding wires, said resin sealing body being continuously formed on both of said first surface and said second surface through said slit; and   (f) forming bump electrodes electrically connected with said first electrode pads over said second surface of said substrate;   wherein a portion of said first surface of said substrate located around said semiconductor pellet in a plan view is covered with a portion of said resin sealing body formed on said first surface of said substrate;   wherein an area in which said first electrode pads are formed is covered with a portion of said resin sealing body formed on said second surface of said substrate;   wherein said portion of said resin sealing body covering said first surface of said substrate is continuously formed with said portion of said resin sealing body covering said second surface of said substrate through said portion of said slit;   wherein said step (e) includes a step of providing a molding die including a first die having a first concaved portion and a second die having a second concaved portion, a step of arranging said semiconductor pellet in said first concaved portion such that said first surface of said substrate faces said first die, and arranging said slit, said first electrode pads and said bonding wires in said second concaved portion such that said second surface of said substrate faces said second die, and a step of forming said resin sealing body inside of each of said first concaved portion and said second concaved portion by supplying resin into each of said first concaved portion and said second concaved portion;   wherein said substrate has second electrode pads formed on said second surface, and electrically connected with said first electrode pads, respectively;   wherein said second electrode pads are arranged at both sides of said slit in a plan view;   wherein, in said step (e), said resin is supplied such that said resin sealing body is not formed over said second electrode pads, and such that said second electrode pads are covered with said second die; and   wherein, in said step (f), said bump electrodes are formed on said second electrode pads, respectively.   
     
     
       27. The method of manufacturing a semiconductor device according to claim 26, wherein said resin sealing body is formed by a transfer molding method using said molding die. 
     
     
       28. The method of manufacturing a semiconductor device according to claim 27, wherein said resin sealing body includes a first portion formed on said first surface of said substrate, a second portion formed on said second surface of said substrate and a third portion in said slit; and
 wherein said first to third portions of said resin sealing body are continuously formed to one another.   
     
     
       29. The method of manufacturing a semiconductor device according to claim 26, wherein said resin sealing body is comprised of resin containing filler. 
     
     
       30. The method of manufacturing a semiconductor device according to claim 28, wherein a height of each of said bump electrodes is larger than a thickness in a thickness direction of said substrate of said portion of said resin sealing body formed on said second surface of said substrate. 
     
     
       31. The method of manufacturing a semiconductor device according to claim 30, wherein said bump electrodes are formed of a Pb-Sn alloy. 
     
     
       32. The method of manufacturing a semiconductor device according to claim 30, wherein said bump electrodes are formed to provide an electrical and mechanical connection to a mounting board. 
     
     
       33. The method of manufacturing a semiconductor device according to claim 26, wherein an arrangement pitch of said first electrode pads is larger than that of said bonding pads. 
     
     
       34. The method of manufacturing a semiconductor device according to claim 26, wherein said bump electrodes are arranged at both sides of said slit in a plan view. 
     
     
       35. The method of manufacturing a semiconductor device according to claim 26, wherein said bump electrodes are arranged in a gird at both sides of said slit in a plan view. 
     
     
       36. The method of manufacturing a semiconductor device according to claim 26, wherein said bump electrodes are arranged at both sides of said portion of said resin sealing body formed on said second surface of said substrate in a plan view. 
     
     
       37. The method of manufacturing a semiconductor device according to claim 26, wherein said portion of said resin sealing body formed on said first surface of said substrate has a portion located outside of an area in which said bump electrodes are arranged, when viewed in a plan view. 
     
     
       38. The method of manufacturing a semiconductor device according to claim 26, wherein a part of said bump electrodes is arranged on said second surface of said substrate within a projection of an area on which said portion of said resin sealing body formed on said first surface of said substrate covering said portion of said first surface of said substrate located around said semiconductor pellet is formed, when viewed in a plan view. 
     
     
       39. The method of manufacturing a semiconductor device according to claim 26, wherein in said step (e), said resin is supplied such that said second concaved portion of said second die is arranged between said second electrode pads arranged at both sides of said slit in a plan view, and such that said second electrode pads are arranged inside of said first concaved portion of said first die in a plan view. 
     
     
       40. The method of manufacturing a semiconductor device according to claim 26, wherein in said step (e), said resin and said substrate are heated by said molding die. 
     
     
       41. The method of manufacturing a semiconductor device according to claim 26, wherein in said step (e), said resin is supplied from said first concaved portion of said first die to said second concaved portion through said slit. 
     
     
       42. The method of manufacturing a semiconductor device according to one claim 26, wherein said bump electrodes are formed so as to electrically and mechanically connect with a mounting board by reflowing said bump electrodes. 
     
     
       43. The method of manufacturing a semiconductor device according to claim 26, wherein said method of manufacturing said semiconductor device further comprising following steps (g) and (h);
 (g) providing a mounting board having third electrode pads; and   (h) electrically and mechanically connecting said bump electrodes with said third electrode pads by reflowing said bump electrodes.   
     
     
       44. The method of manufacturing a semiconductor device according to claim 26, wherein in said step (e), said resin sealing body is formed such that a rear surface opposed to said main surface of said semiconductor pellet is exposed from said resin sealing body. 
     
     
       45. The method of manufacturing a semiconductor device according to claim 26, wherein said bonding pads of said semiconductor pellet is arranged over a peripheral portion of said main surface, and along a side of said main surface of said semiconductor pellet. 
     
     
       46. The method of manufacturing a semiconductor device according to claim 26, wherein no through hole wirings are formed in said substrate. 
     
     
       47. The method of manufacturing a semiconductor device according to claim 26, wherein said substrate has through hole wirings and wirings formed in another layer in which said first electrode pads are not formed; and
 wherein a part of said first electrode pads are electrically connected with said wirings via said through hole wirings, respectively.   
     
     
       48. The method of manufacturing a semiconductor device according to claim 47, wherein said part of said first electrode pads, said through hole wirings and said wirings are for applying reference potential to said semiconductor pellet. 
     
     
       49. The method of manufacturing a semiconductor device according to claim 26, wherein said bonding pads arranged inside of said slit in a plan view and formed in line are connected with said first electrode pads via bonding wires. 
     
     
       50. A method of manufacturing a semiconductor device comprising the steps of:
 (a) providing a semiconductor pellet having a circuit system and bonding pads formed on a main surface thereof;   (b) providing a substrate having a first surface, a second surface opposite to said first surface, a slit passing through said substrate from said first surface to said second surface and first electrode pads formed on said second surface, and including glass fibers and resin;   (c) mounting said semiconductor pellet on said substrate such that said main surface of said semiconductor pellet faces said first surface of said substrate, and such that the semiconductor pellet is fixed to said first surface of said substrate, and such that said bonding pads are arranged inside of said slit in a plan view, and such that a portion of said slit is arranged outside of said semiconductor pellet in a plan view;   (d) after said step (c), connecting said bonding pads of said semiconductor pellet with said first electrode pads of said substrate via bonding wires running through said slit, respectively;   (e) forming a resin sealing body sealing said bonding wires, said resin sealing body being continuously formed on both of said first surface and said second surface through said slit; and   (f) forming bump electrodes electrically connected with said first electrode pads over said second surface of said substrate;   wherein a portion of said first surface of said substrate located around said semiconductor pellet in a plan view is covered with a portion of said resin sealing body formed on said first surface of said substrate;   wherein an area in which said first electrode pads are formed is covered with a portion of said resin sealing body formed on said second surface of said substrate;   wherein said portion of said resin sealing body covering said first surface of said substrate is continuously formed with said portion of said resin sealing body covering said second surface of said substrate through said portion of said slit;   wherein said bump electrodes are arranged at both sides of said portion of said resin sealing body formed on said second surface of said substrate in a plan view;   wherein said step (e) includes a step of providing a molding die including a first die having a first concaved portion and a second die having a second concaved portion, a step of arranging said semiconductor pellet in said first concaved portion such that said first surface of said substrate faces said first die, and arranging said slit, said first electrode pads and said bonding wires in said second concaved portion such that said second surface of said substrate faces said second die, and a step of forming said resin sealing body inside of each of said first concaved portion and said second concaved portion by supplying resin into each of said first concaved portion and said second concaved portion;   wherein said substrate has second electrode pads formed on said second surface, and electrically connected with said first electrode pads, respectively;   wherein said second electrode pads are arranged at both sides of said slit in a plan view;   wherein, in said step (e), said resin is supplied such that said resin sealing body is not formed over said second electrode pads, and such that said second electrode pads are covered with said second die;   wherein, in said step (f), said bump electrodes are formed on said second electrode pads, respectively; and   wherein a part of said bump electrodes are arranged inside of said semiconductor pellet in a plan view; and   wherein said portion of said resin sealing body formed on said first surface of said substrate has a portion located outside of an area in which said bump electrodes are arranged, when viewed in a plan view.   
     
     
       51. The method of manufacturing a semiconductor device according to claim 50, wherein a part of said bump electrodes is arranged on said surface of said substrate within a projection of on an area on which said portion of said resin sealing body formed on said first surface of said substrate covering said portion of said first surface of said substrate located around said semiconductor pellet is formed, when viewed in a plan view. 
     
     
       52. The method of manufacturing a semiconductor device according to claim 50, wherein in said step (e), said resin is supplied such that said second concaved portion of said second die is arranged between said second electrode pads arranged at both sides of said slit in a plan view, and such that said second electrode pads are arranged inside of said first concaved portion of said first die in a plan view. 
     
     
       53. A method of manufacturing a semiconductor device comprising the steps of:
 (a) providing a semiconductor pellet having a circuit system and bonding pads formed on a main surface thereof;   (b) providing a substrate having a first surface, a second surface opposite to said first surface, a slit passing through said substrate from said first surface to said second surface and first electrode pads formed on said second surface, and including glass fibers and resin, said first electrode pads being arranged at both sides of said slit in a plan view;   (c) mounting said semiconductor pellet on said substrate such that said main surface of said semiconductor pellet faces said first surface of said substrate, and such that the semiconductor pellet is fixed to said first surface of said substrate, and such that said bonding pads are arranged inside of said slit in a plan view, and such that a portion of said slit is arranged outside of said semiconductor pellet in a plan view;   (d) after said step (c), connecting said bonding pads of said semiconductor pellet with said first electrode pads of said substrate via bonding wires running through said slit, respectively;   (e) forming a resin sealing body sealing said bonding wires, said resin sealing body being continuously formed on both of said first surface and said second surface through said slit; and   (f) forming bump electrodes electrically connected with said first electrode pads over said second surface of said substrate;   wherein a portion of said first surface of said substrate located around said semiconductor pellet in a plan view is covered with a portion of said resin sealing body formed on said first surface of said substrate;   wherein an area in which said first electrode pads are formed is covered with a portion of said resin sealing body formed on said second surface of said substrate;   wherein said portion of said resin sealing body covering said first surface of said substrate is continuously formed with said portion of said resin sealing body covering said second surface of said substrate through said portion of said slit;   wherein said step (e) includes a step of providing a molding die including a first die having a first concaved portion and a second die having a second concaved portion, a step of arranging said semiconductor pellet in said first concaved portion such that said first surface of said substrate faces said first die, and arranging said slit, said first electrode pads and said bonding wires in said second concaved portion such that said second surface of said substrate faces said second die, and a step of forming said resin sealing body inside of each of said first concaved portion and said second concaved portion by supplying resin into each of said first concaved portion and said second concaved portion;   wherein said substrate has second electrode pads formed on said second surface, and electrically connected with said first electrode pads, respectively;   wherein said second electrode pads are arranged at both sides of said slit in a plan view;   wherein, in said step (e), said resin is supplied such that said resin sealing body is not formed over said second electrode pads, and such that said second electrode pads are covered with said second die; and   wherein, in said step (f), said bump electrodes are formed on said second electrode pads, respectively.   
     
     
       54. The method of manufacturing a semiconductor device according to claim 53, wherein said bump electrodes are arranged at both sides of said slit in a plan view. 
     
     
       55. The method of manufacturing a semiconductor device according to claim 53, wherein said bump electrodes are arranged in a gird at both sides of said slit in a plan view. 
     
     
       56. The method of manufacturing a semiconductor device according to claim 55, wherein said bump electrodes are arranged at both sides of said portion of said resin sealing body formed on said second surface of said substrate in a plan view. 
     
     
       57. The method of manufacturing a semiconductor device according to claims 56, wherein said portion of said resin sealing body formed on said first surface of said substrate has a portion located outside of an area in which said bump electrodes are arranged, when viewed in a plan view. 
     
     
       58. The method of manufacturing a semiconductor device according to claim 57, wherein a part of said bump electrodes is arranged on said second surface of said substrate within a projection of an area on which said portion of said resin sealing body formed on said first surface of said substrate covering said portion of said first surface of said substrate located around said semiconductor pellet is formed, when viewed in a plan view. 
     
     
       59. The method of manufacturing a semiconductor device according to claim 53, wherein said substrate has through hole wirings and wirings formed in another layer in which said first electrode pads are not formed; and
 wherein a part of said first electrode pads are electrically connected with said wirings via said through hole wirings, respectively.   
     
     
       60. The method of manufacturing a semiconductor device according to claim 59, wherein said part of said first electrode pads, said through hole wirings and said wirings are for applying reference potential to said semiconductor pellet. 
     
     
       61. The method of manufacturing a semiconductor device according to claim 53, wherein in said step (e), said resin is supplied such that said second concaved portion of said second die is arranged between said second electrode pads arranged at both sides of said slit in a plan view, and such that said second electrode pads are arranged inside of said first concaved portion of said first die in a plan view.