Semiconductor light emitting device and method for manufacturing the same

Abstract

A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure. The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.

What is claimed is: 
     
       1. A semiconductor light emitting device comprising:
 a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, 
 a first electrode connected to the first semiconductor layer, and 
 a second electrode connected to the second semiconductor layer, 
 wherein one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, 
 wherein said semiconductor stacking structure is formed on or above a support member, 
 wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and 
 wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure. 
 
     
     
       2. The semiconductor light emitting device according to  claim 1 , wherein said second electrode has (1) a portion that makes contact with the second semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, the two portions of said second electrode being provided on one principal surface of said second electrode. 
     
     
       3. The semiconductor light emitting device according to  claim 1 , wherein
 one principal surface of the second electrode has a portion that makes contact with the second semiconductor layer so as to establish electrical continuity; and 
 another principal surface of the second electrode is an external connection section. 
 
     
     
       4. The semiconductor light emitting device according to  claim 1 , wherein
 said support member is an electrically conductive substrate, 
 said bonding member is an electrically conductive member, and wherein 
 one of said first electrode and said second electrode is bonded with the electrically conductive member so as to establish electrical continuity. 
 
     
     
       5. The semiconductor light emitting device according to  claim 4 , wherein said second electrode makes electrical contact with said electrically conductive substrate by said electrically conductive bonding member to form an outer electrode on said electrically conductive substrate side. 
     
     
       6. The semiconductor light emitting device according to  claim 4 , wherein the first and second electrodes are insulated by an insulating film on the semiconductor stacking structure. 
     
     
       7. The semiconductor light emitting device according to  claim 4 , further comprising a third electrode on a surface of said support member to be connected with an external circuit. 
     
     
       8. The semiconductor light emitting device according to  claim 1 , wherein said external connection section of the first electrode has a pad electrode. 
     
     
       9. The semiconductor light emitting device according to  claim 8 , wherein said external connection section is disposed on an outer side of said semiconductor stacking structure. 
     
     
       10. The semiconductor light emitting device according to  claim 1 , wherein the bonding member is electrically conductive, and another principal surface of the said first electrode is covered with an insulating film. 
     
     
       11. A semiconductor light emitting device comprising:
 a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, 
 a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein 
 one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, and wherein 
 one of said first electrode and said second electrode is electrically separated into a plurality of electrode segments on or above said semiconductor stacking structure, 
 wherein said semiconductor stacking structure is formed on or above a support member, 
 wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and 
 wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure. 
 
     
     
       12. The semiconductor light emitting device according to  claim 11 , wherein
 said bonding member is an electrically conductive bonding member, 
 said second electrode is composed of said electrode segments being connected to each other by the electrically conductive bonding member, and wherein 
 said first electrode surrounds said electrode segments. 
 
     
     
       13. The semiconductor light emitting device according to  claim 12 , wherein said external connection section is composed of at least a pair of sections opposed to each other so as to sandwich said surrounded electrode segments, said pair of sections being disposed outer sides of semiconductor stacking structure. 
     
     
       14. The semiconductor light emitting device according to  claim 13 , wherein said electrode segments are surrounded by a linear first electrode formed in lattice configuration. 
     
     
       15. The semiconductor light emitting device according to  claim 13 , wherein said support member is an electrically conductive substrate, and further comprising a third electrode on a surface of said support member to be connected with an external circuit. 
     
     
       16. A semiconductor light emitting device comprising:
 a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other,   a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein   one principal surface of said first electrode has (1) a portion that makes direct contact with a surface of the first semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section, and wherein   one of said first electrode and said second electrode is electrically separated into a plurality of electrode segments,   wherein said semiconductor stacking structure is formed on or above a support member,   wherein said first electrode and said second electrode are provided between said support member and said semiconductor stacking structure, and   wherein a bonding member fills all of a space between confronting surfaces of said support member and said semiconductor stacking structure.   
     
     
       17. A semiconductor light emitting device comprising:
 a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other,   a first electrode connected to the first semiconductor layer, and   a second electrode connected to the second semiconductor layer,   wherein one principal surface of one of said first and second electrodes has (1) a portion that makes direct contact with a surface of a respective one of said first or second semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section,   wherein said semiconductor stacking structure is formed on or above a support member,   wherein said first electrode and said second electrode are each provided between said support member and respective layers of said semiconductor stacking structure, and   wherein said semiconductor light emitting device further comprises a bonding member forming a region that: (1) extends substantially from one side of the semiconductor light emitting device to the other side of the semiconductor light emitting device; (2) is above said support member; and (3) is between confronting surfaces of said support member and said semiconductor stacking structure,   said bonding member thereby providing electrical connectivity between said support member and at least one of said first and second electrodes.   
     
     
       18. The semiconductor light emitting device according to claim 17, wherein
 said first semiconductor layer is an n-type semiconductor layer,   said first electrode is an n electrode, and   said bonding member is electrically connected to said n electrode or said n-type semiconductor layer.   
     
     
       19. The semiconductor light emitting device according to claim 17, wherein
 said second semiconductor layer is a p-type semiconductor layer,   said second electrode is a p electrode, and   said bonding member is electrically connected to said p electrode or said p-type semiconductor layer.   
     
     
       20. The semiconductor light emitting device according to claim 17, wherein a pad electrode is provided on said external connection section. 
     
     
       21. The semiconductor light emitting device according to claim 17, wherein
 said external connection section is part of said first electrode, and   a pad electrode is provided to said external connection section of said first electrode, for connecting to an external wiring.   
     
     
       22. The semiconductor light emitting device according to claim 17, wherein
 said external connection section is part of said first electrode, and   an interconnect electrode connects to said external connection section of said first electrode.   
     
     
       23. The semiconductor light emitting device according to claim 17, wherein said second electrode includes multiple electrodes that are wiring-like electrodes connected with each other on said semiconductor stacking structure. 
     
     
       24. The semiconductor light emitting device according to claim 17, wherein
 said one principal surface is included in said first electrode.   
     
     
       25. The semiconductor light emitting device according to claim 17, wherein
 said external connection section is part of said second electrode, and   a pad electrode is provided to said external connection section of said second electrode, for connecting to an external wiring.   
     
     
       26. The semiconductor light emitting device according to claim 17, wherein
 said external connection section is part of said second electrode, and   an interconnect electrode connects to said external connection section of said second electrode.   
     
     
       27. The semiconductor light emitting device according to claim 17, wherein said first electrode includes multiple electrodes that are wiring-like electrodes connected with each other on said semiconductor stacking structure. 
     
     
       28. The semiconductor light emitting device according to claim 17, wherein
 said one principal surface is included in said second electrode.   
     
     
       29. The semiconductor light emitting device according to claim 17, wherein said first electrode is an n electrode. 
     
     
       30. The semiconductor light emitting device according to claim 17, wherein said second electrode is a p electrode, and said second semiconductor layer is p-type. 
     
     
       31. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises a conductive oxide or nitride. 
     
     
       32. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises a metal. 
     
     
       33. The semiconductor light emitting device according to claim 32, wherein said at least one of said first and second electrodes has a stacked structure. 
     
     
       34. The semiconductor light emitting device according to claim 32, wherein said metal includes at least one material selected from the group consisting of:
 nickel (Ni), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), iridium (Ir), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), cobalt (Co), iron (Fe), manganese (Mn), molybdenum (Mo), chromium (Cr), tungsten (W), lanthanum (La), copper (Cu), silver (Ag), and yttrium (Y).   
     
     
       35. The semiconductor light emitting device according to claim 32, wherein said metal includes at least one material selected from the group consisting of:
 a compound of nickel (Ni), a compound of platinum (Pt), a compound of palladium (Pd), a compound of rhodium (Rh), a compound of ruthenium (Ru), a compound of osmium (Os), a compound of iridium (Ir), a compound of titanium (Ti), a compound of zirconium (Zr), a compound of hafnium (Hf), a compound of vanadium (V), a compound of niobium (Nb), a compound of tantalum (Ta), a compound of cobalt (Co), a compound of iron (Fe), a compound of manganese (Mn), a compound of molybdenum (Mo), a compound of chromium (Cr), a compound of tungsten (W), a compound of lanthanum (La), a compound of copper (Cu), a compound of silver (Ag), and a compound of yttrium (Y).   
     
     
       36. The semiconductor light emitting device according to claim 32, wherein said metal includes at least one material selected from the group consisting of:
 ITO, ZnO, In 2 O 3  and SnO 2 .   
     
     
       37. The semiconductor light emitting device according to claim 36, wherein said ITO has a thickness of 5 nm to 10 μm. 
     
     
       38. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises an alloy. 
     
     
       39. The semiconductor light emitting device according to claim 38, wherein said at least one of said first and second electrodes has a stacked structure. 
     
     
       40. The semiconductor light emitting device according to claim 38, wherein said alloy includes at least one material selected from the group consisting of:
 nickel (Ni), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), iridium (Ir), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), cobalt (Co), iron (Fe), manganese (Mn), molybdenum (Mo), chromium (Cr), tungsten (W), lanthanum (La), copper (Cu), silver (Ag), and yttrium (Y).   
     
     
       41. The semiconductor light emitting device according to claim 38, wherein said alloy includes at least one material selected from the group consisting of:
 a compound of nickel (Ni), a compound of platinum (Pt), a compound of palladium (Pd), a compound of rhodium (Rh), a compound of ruthenium (Ru), a compound of osmium (Os), a compound of iridium (Ir), a compound of titanium (Ti), a compound of zirconium (Zr), a compound of hafnium (Hf), a compound of vanadium (V), a compound of niobium (Nb), a compound of tantalum (Ta), a compound of cobalt (Co), a compound of iron (Fe), a compound of manganese (Mn), a compound of molybdenum (Mo), a compound of chromium (Cr), a compound of tungsten (W), a compound of lanthanum (La), a compound of copper (Cu), a compound of silver (Ag), and a compound of yttrium (Y).   
     
     
       42. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes is a diffusive conductor. 
     
     
       43. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises a metal layer including a thin light transmissive film. 
     
     
       44. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes is a reflective electrode which comprises a metal having a high reflectivity. 
     
     
       45. The semiconductor light emitting device according to claim 44, wherein said metal having high reflectivity is Al, Ag or Rh. 
     
     
       46. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises Al, Ag or Rh. 
     
     
       47. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises a first layer, a second layer, and a middle layer which is a barrier layer with a high melting point. 
     
     
       48. The semiconductor light emitting device according to claim 47, wherein the middle layer comprises W, Mo, or a platinum group metal. 
     
     
       49. The semiconductor light emitting device according to claim 17, wherein said first electrode comprises one of gold, Al and a metal of platinum group. 
     
     
       50. The semiconductor light emitting device according to claim 17, wherein said first electrode comprises Ti and Al. 
     
     
       51. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises W, Mo or Ti. 
     
     
       52. The semiconductor light emitting device according to claim 17, wherein at least one of an end face, a side face, a topmost face, an exposed surface and an interface of said semiconductor stacking structure comprises a concave portion and a convex portion. 
     
     
       53. The semiconductor light emitting device according to claim 52, wherein a transparent insulating film is disposed on said at least one of an end face, side face, topmost face, exposed surface and interface of said semiconductor stacking structure. 
     
     
       54. The semiconductor light emitting device according to claim 53, wherein a concavity and a convexity is formed on the surface of the transparent insulating film. 
     
     
       55. The semiconductor light emitting device according to claim 17, wherein at least one of an end face, a side face, a topmost face, an exposed surface and an interface of said semiconductor stacking structure comprises a plurality of protrusions and recesses. 
     
     
       56. The semiconductor light emitting device according to claim 17, wherein at least one of an end face, a side face, a topmost face, an exposed surface and an interface of said semiconductor stacking structure comprises an irregular surface section. 
     
     
       57. The semiconductor light emitting device according to claim 17, wherein a transparent insulating film is disposed on said semiconductor stacking structure. 
     
     
       58. The semiconductor light emitting device according to claim 17, wherein the topmost surface of said semiconductor stacking structure is covered by a transparent insulating film. 
     
     
       59. The semiconductor light emitting device according to claim 17, wherein a portion of said first electrode and a portion of said second electrode overlap. 
     
     
       60. The semiconductor light emitting device according to claim 59, wherein
 said first electrode is an n electrode and said second electrode is a p electrode.   
     
     
       61. The semiconductor light emitting device according to claim 59, wherein said portion of said first electrode and said portion of said second electrode which overlap are separated by an insulating film. 
     
     
       62. The semiconductor light emitting device according to claim 17, wherein said support member comprises a metallic material or a semiconductor material. 
     
     
       63. The semiconductor light emitting device according to claim 62, wherein said metallic material comprises one of Ag, Cu, Au, Pt, W, Mo, Cr, Ni, Cu—W, and Cu—Mo. 
     
     
       64. The semiconductor light emitting device according to claim 17, wherein said support member comprises one of Si, SiC, GaAs, GaP, InP, ZnSe, ZnS, ZnO. 
     
     
       65. The semiconductor light emitting device according to claim 17, wherein said support member comprises a light transmissive material. 
     
     
       66. The semiconductor light emitting device according to claim 17, wherein said bonding member comprises a light transmissive material. 
     
     
       67. The semiconductor light emitting device according to claim 17, wherein a reflecting film is provided on one of said bonding member and said support member. 
     
     
       68. The semiconductor light emitting device according to claim 67, wherein the reflecting film comprises Al or Ag. 
     
     
       69. The semiconductor light emitting device according to claim 17, wherein a reflective electrode is provided on at least one of said bonding member, said support member, and a part of said semiconductor stacking structure. 
     
     
       70. The semiconductor light emitting device according to claim 17, wherein said bonding member comprises a stack structure. 
     
     
       71. The semiconductor light emitting device according to claim 17, wherein said bonding member comprises an alloy structure. 
     
     
       72. The semiconductor light emitting device according to claim 17, wherein said bonding member comprises at least one material selected from the group consisting of a resin, a mixture of Ag paste, carbon paste, ITO paste, a composite material, an organic material, a soldering material, a metal, a stack of metals, and an alloy of metals. 
     
     
       73. The semiconductor light emitting device according to claim 17, wherein said bonding member comprises at least one of Au, Sn, Pd, In, Au—Sn, Sn—Pd, and In—Pd. 
     
     
       74. The semiconductor light emitting device according to claim 17, wherein said bonding member is formed by a metal-to-metal junction. 
     
     
       75. The semiconductor light emitting device according to claim 74, wherein the metal-to-metal junction is an Au-Au junction. 
     
     
       76. The semiconductor light emitting device according to claim 17, wherein a surface of said second electrode is exposed to form an external connection section as an external electrode of said second electrode. 
     
     
       77. The semiconductor light emitting device according to claim 76, wherein said second electrode is a p electrode. 
     
     
       78. The semiconductor light emitting device according to claim 17, wherein a surface of said first electrode is exposed to form said external connection section as an external electrode for said first electrode. 
     
     
       79. The semiconductor light emitting device according to claim 78, wherein said first electrode is an n electrode. 
     
     
       80. The semiconductor light emitting device according to claim 17, wherein a wiring for said semiconductor light emitting device has a 3-dimensional configuration. 
     
     
       81. The semiconductor light emitting device according to claim 17, wherein the semiconductor light emitting device further comprises a base layer for said bonding member. 
     
     
       82. The semiconductor light emitting device according to claim 81, wherein said base layer is also a pad electrode for electrical connection to one of said first and second electrodes. 
     
     
       83. The semiconductor light emitting device according to claim 81, wherein said base layer is a junction layer joining said bonding member to at least one of said first and second electrodes. 
     
     
       84. The semiconductor light emitting device according to claim 81, wherein said base layer is disposed between said support member and said bonding member. 
     
     
       85. The semiconductor light emitting device according to claim 81, wherein said base layer is disposed between said semiconductor stacking structure and said bonding member. 
     
     
       86. The semiconductor light emitting device according to claim 81, wherein said base layer is disposed between an insulating film and said bonding member. 
     
     
       87. The semiconductor light emitting device according to claim 86, wherein said base layer and said insulating film directly contact each other. 
     
     
       88. The semiconductor light emitting device according to claim 87, wherein said base layer and one of said first and second electrodes are electrically connected. 
     
     
       89. The semiconductor light emitting device according to claim 81, wherein said base layer comprises a metal or other conductive material. 
     
     
       90. The semiconductor light emitting device according to claim 89, wherein said base layer comprises Ti, Pt and Au. 
     
     
       91. The semiconductor light emitting device according to claim 81, wherein said base layer comprises a stack structure. 
     
     
       92. The semiconductor light emitting device according to claim 81, wherein said base layer comprises Ti, Pt and Au. 
     
     
       93. The semiconductor light emitting device according to claim 81, wherein said base layer covers substantially the entire surface of said bonding member. 
     
     
       94. The semiconductor light emitting device according to claim 17, wherein the semiconductor light emitting device comprises one light emitting structure section. 
     
     
       95. The semiconductor light emitting device according to claim 17, wherein the semiconductor light emitting device comprises a plurality of light emitting structure sections, each light emitting structure section comprising a portion of said semiconductor stacking structure. 
     
     
       96. The semiconductor light emitting device according to claim 17, wherein the semiconductor light emitting device comprises a plurality of semiconductor stacking structures. 
     
     
       97. The semiconductor light emitting device according to claim 96, wherein said plurality of semiconductor stacking structures, which are separated from each other, are connected by said first electrode. 
     
     
       98. The semiconductor light emitting device according to claim 17, wherein said bonding member has an interface at which two bonding portions of said bonding member are bonded to each other. 
     
     
       99. The semiconductor light emitting device according to claim 17, wherein said bonding member directly contacts said support member. 
     
     
       100. The semiconductor light emitting device according to claim 17, wherein said first electrode is electrically connected to said first semiconductor layer, and said second electrode is electrically connected to said second semiconductor layer. 
     
     
       101. The semiconductor light emitting device according to claim 17, wherein a portion of said first electrode is at a different distance from said support member than a portion of said second electrode. 
     
     
       102. The semiconductor light emitting device according to claim 17, said semiconductor light emitting device further comprising an insulating film disposed between said first electrode and said second electrode. 
     
     
       103. The semiconductor light emitting device according to claim 102, wherein said insulating film comprises a portion located below said second electrode. 
     
     
       104. The semiconductor light emitting device according to claim 102, wherein said insulating film is disposed between said semiconductor stacking structure and said support member. 
     
     
       105. The semiconductor light emitting device according to claim 102, wherein said insulating film is disposed between said bonding member and said at least one of said first and second electrodes having said exposed portion. 
     
     
       106. The semiconductor light emitting device according to claim 17, wherein a top surface of said bonding member includes portions which are at different distances from said support member. 
     
     
       107. The semiconductor light emitting device according to claim 17, wherein said semiconductor stacking structure is formed from a III-V group nitride semiconductor. 
     
     
       108. The semiconductor light emitting device according to claim 107, wherein said III-V group nitride semiconductor is In α Al β Ga 1-α-β N, wherein 0≦α, 0≦β, and α+β≦1. 
     
     
       109. The semiconductor light emitting device according to claim 17, wherein in a cross-section of said light emitting device, said second semiconductor layer is provided above said support member, and said first semiconductor layer is provided above said second semiconductor layer. 
     
     
       110. The semiconductor light emitting device according to claim 109, wherein an active layer is provided between said first semiconductor layer and said second semiconductor layer. 
     
     
       111. The semiconductor light emitting device according to claim 109, wherein
 said first semiconductor layer is a p-type layer and said first electrode is connected to said p-type layer, and   said second semiconductor layer is an n-type layer and said second electrode is connected to said n-type layer.   
     
     
       112. The semiconductor light emitting device according to claim 111, wherein said second electrode is electrically connected to said support member. 
     
     
       113. The semiconductor light emitting device according to claim 109, wherein
 said first semiconductor layer is an n-type layer and said first electrode is connected to said n-type layer, and   said second semiconductor layer is a p-type layer and said second electrode is connected to said p-type layer.   
     
     
       114. The semiconductor light emitting device according to claim 113, wherein said first electrode is electrically connected to said support member. 
     
     
       115. The semiconductor light emitting device according to claim 17, wherein an insulating film extends from a bottom side of said second electrode to an area which is higher than a topmost side of said second electrode. 
     
     
       116. The semiconductor light emitting device according to claim 115, wherein said insulating film separates said second electrode from said first electrode. 
     
     
       117. The semiconductor light emitting device according to claim 17, wherein an insulating film isolates said first electrode and said second electrode from each other. 
     
     
       118. The semiconductor light emitting device according to claim 117, wherein said insulating film comprises an oxide of silicon. 
     
     
       119. The semiconductor light emitting device according to claim 17, wherein said semiconductor light emitting device is mounted on a package. 
     
     
       120. The semiconductor light emitting device according to claim 119, wherein
 a support member electrode for external connection is electrically connected to said support member, said support member electrode being formed on a mounting surface of said support member on the package, and one lead of said package and said support member electrode are bonded to be electrically connected.   
     
     
       121. The semiconductor light emitting device according to claim 17, wherein said bonding member is larger than a forming surface of at least one of said first and second electrodes. 
     
     
       122. The semiconductor light emitting device according to claim 17, wherein said bonding member covers substantially the entire surface of the device structure. 
     
     
       123. The semiconductor light emitting device according to claim 17, wherein said first and second electrodes are located below a topmost surface of said semiconductor stacking structure. 
     
     
       124. The semiconductor light emitting device according to claim 17, wherein said first and second semiconductor layers form a p-n junction, and a side surface of said p-n junction is covered by an insulating film. 
     
     
       125. The semiconductor light emitting device according to claim 17, wherein said first electrode and said second electrode are both provided on the same surface of said semiconductor stacking structure, on the respective first and second semiconductor layers. 
     
     
       126. The semiconductor light emitting device according to claim 17, wherein
 said one principal surface is part of said first electrode and has (1) said portion that makes direct contact with a surface of said first semiconductor layer so as to establish electrical continuity and (2) said another portion that is exposed and forms said external connection section for said first electrode, and   a principal surface of said second electrode has (1) a portion that makes direct contact with a surface of said second semiconductor layer so as to establish electrical continuity and (2) another portion that is exposed and forms an external connection section for said second electrode.   
     
     
       127. The semiconductor light emitting device according to claim 17, wherein at least one of said first and second electrodes comprises a plurality of electrode sections which are physically separated from each other. 
     
     
       128. The semiconductor light emitting device according to claim 127, wherein said plurality of electrode sections are physically separated from each other and are electrically connected to each other. 
     
     
       129. The semiconductor light emitting device according to claim 17, wherein
 said second semiconductor layer is provided above said support member,   said first semiconductor layer is provided above said second semiconductor layer,   said first semiconductor layer is n-type,   said second semiconductor layer is p-type,   said first electrode is electrically connected to said n-type first semiconductor layer,   said second electrode is electrically connected to said p-type second semiconductor layer,   said second electrode having said exposed portion and forming said external connection section,   said first electrode is electrically connected to said support member, and   an insulating film is formed between said first and second electrodes.   
     
     
       130. The semiconductor light emitting device according to claim 17, wherein an active layer is provided between said first semiconductor layer and said second semiconductor layer. 
     
     
       131. The semiconductor light emitting device according to claim 130, wherein said semiconductor stacking structure is formed from a III-V group nitride semiconductor. 
     
     
       132. The semiconductor light emitting device according to claim 131, wherein said III-V group nitride semiconductor is In α Al β Ga 1-α-β N, wherein 0≦α, 0≦β, and α+β≦1. 
     
     
       133. The semiconductor light emitting device according to claim 131, wherein said first and second electrodes overlap, with an insulating film being disposed therebetween. 
     
     
       134. The semiconductor light emitting device according to claim 131, further comprising a base layer. 
     
     
       135. The semiconductor light emitting device according to claim 134,
 wherein said base layer is connected to said first electrode.   
     
     
       136. The semiconductor light emitting device according to claim 135, wherein said base layer and said second electrode overlap, with an insulating film being disposed therebetween. 
     
     
       137. The semiconductor light emitting device according to claim 135,
 wherein said bonding member, said base layer, an insulating film, said second electrode, and said second semiconductor layer, are stacked in this order from said support member.   
     
     
       138. The semiconductor light emitting device according to claim 137, wherein said insulating film extends from a bottom side of said second electrode to an area which is higher than a topmost side of said second semiconductor layer. 
     
     
       139. The semiconductor light emitting device according to claim 138, wherein said first electrode has a plurality of electrode sections. 
     
     
       140. The semiconductor light emitting device according to claim 139, wherein at least one of an end face, a side face, a topmost face, an exposed surface and an interface of said semiconductor stacking structure comprises a plurality of concave portions or convex portions. 
     
     
       141. The semiconductor light emitting device according to claim 140, wherein said active layer comprises a barrier layer and a well layer. 
     
     
       142. The semiconductor light emitting device according to claim 17, wherein a topmost face of said semiconductor stacking structure comprises a concave portion and a convex portion. 
     
     
       143. The semiconductor light emitting device according to claim 142, wherein a transparent insulating film is disposed on said topmost face of said semiconductor stacking structure. 
     
     
       144. The semiconductor light emitting device according to claim 143, wherein a concavity and a convexity is formed on the surface of the transparent insulating film.