Support for microelectronic, microoptoelectronic or micromechanical devices

Abstract

The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and discrete deposits of gas absorbing or contaminant removing material on the base by a variety of techniques and a layer for temporary protection of the contaminant removing material on top of the contaminant removing material. Passages are created in the layer which expose the contaminant removing material to atmosphere. The device may be used as a covering for the microdevice as well.

We claim: 
     
       1. A device for use in manufacturing, comprising a base, wherein said base functions as mechanical support for said device, wherein said device is configured such that on said base a contaminant removing material is deposed in the form of discrete deposits, wherein said discrete deposits are configured to be at least partially exposed to the atmospheric environment of said device and wherein said discrete deposits of contaminant removing material have a thickness within a range from 0.1 to 5 μm. 
     
     
       2. The device as recited in  claim 1 , wherein said device is used in the manufacture of a microdevice selected from the group consisting of: microelectronic devices (IC), micromechanical devices (MM), and microoptoelectronic devices, wherein said microoptoelectronic devices include IR sensors. 
     
     
       3. A device for use in manufacturing, comprising a base, wherein said base functions as mechanical support for said device, said device characterized in that on said base a contaminant removing material is deposed in the form of discrete deposits have a thickness within a range from 0.1 to 5 μm, wherein said base is covered with a layer of a material compatible with the production of microelectronic or micromechanical devices or parts thereof, said layer including passages which allow contact between the atmospheric environment of said device and said contaminant removing material. 
     
     
       4. A device for use in manufacture of solid state devices comprising a base, where said base comprises discrete deposits of a contaminant removing material having a thickness within a range from 0.1 to 5 μm, where said contaminant removing material is entirely exposed to the atmospheric environment of said device. 
     
     
       5. The device as recited in  claim 4 , said base further comprising a layer of material compatible with the production of microelectronic or micromechanical devices or parts thereof, said layer comprising passages which allow contact between the atmospheric environment of said device and said contaminant removing material. 
     
     
       6. The device as recited in  claim 1 , said base further comprising a layer of a material compatible with the production of microelectronic or micromechanical devices or parts thereof, said layer comprising passages which allow contact between said deposits and said atmospheric environment. 
     
     
       7. The device as recited, in  claim 1 , wherein said base is configured with one or more hollows wherein said one or more hollows are fitted to comprise said discrete deposits of contaminant removing material. 
     
     
       8. The device as recited in  claim 1  wherein said base includes material selected from the group consisting of: metals, ceramics, glass, and semiconductors. 
     
     
       9. The device as recited in  claim 8 , wherein said material is silicon. 
     
     
       10. The device as recited in  claim 1  wherein said contaminant removing material is a getter material. 
     
     
       11. The device as recited in  claim 10  wherein said getter material includes a material selected from the group of metals consisting of: Zr, Ti, Nb, Ta, V, and alloys of these metals. 
     
     
       12. The device as recited in  claim 11  wherein said getter material further comprises a material selected from the group consisting of: Cr, Mn, Fe, Co, Ni, Al, Y, La and rare-earths. 
     
     
       13. The device as recited in  claim 11  characterized in that said getter material is titanium. 
     
     
       14. The device as recited in  claim 11  wherein said getter material is zirconium. 
     
     
       15. The device as recited in  claim 11  wherein said getter material is an alloy having a weight percentage composition Zr 84%-Al 16%. 
     
     
       16. The device as recited in  claim 11  wherein said getter material is an alloy having a weight percentage composition Zr 70%-V 24.6%-Fe 5.4%. 
     
     
       17. The device as recited in  claim 11  wherein said getter material is an alloy having a weight percentage composition Zr 80.8%-Co 14.2%-TR 5%, wherein TR is selected from the group consisting of: rare earths, yttrium, lanthanum and mixtures thereof. 
     
     
       18. The device as recited in  claim 1 , wherein said contaminant removing material is a drier material. 
     
     
       19. The device as recited in  claim 18  wherein said drier material is chosen among the oxides of alkali or alkaline-earth metals. 
     
     
       20. The device as recited in  claim 19  wherein said drier material is calcium oxide. 
     
     
       21. The device as recited in  claim 1 , wherein said discrete deposits of contaminant removing material have a thickness within a range from 0.1 to 5 μm. 
     
     
       22. The device recited in  claim 3  wherein said material compatible with production of microelectronic, microoptoelectronic or micromechanical devices or parts thereof is a semiconductor material. 
     
     
       23. The device recited in  claim 22  wherein said material is silicon. 
     
     
       24. The device recited in  claim 3  wherein said layer of material compatible with production of microelectronic, microoptoelectronic or micromechanical devices or parts thereof have a thickness within a range from 1 to 20μm. 
     
     
       25. A microdevice in which the device for use in manufacturing recited in  claim 1  is used as covering element in the production of a micromechanical device. 
     
     
       26. A device for use in the manufacture of a microdevice comprising:
 mechanical support means; 
 contaminant removal means having a thickness within a range from 0.1 to 5 μm deposed on said mechanical support means; and 
 cover means for said mechanical support means, wherein said cover means is configured with passage means, such that contaminant removal means is exposed to atmosphere through said passage means. 
 
     
     
       27. A microdevice manufacturing device, comprising:
 a base; 
 a gas absorbing material coupled to the base having a thickness within a range from 0.1 to 5 μm; and 
 a production process-compatible layer, covering the gas absorbing material, having a plurality of passages realized therein, wherein said passages facilitate atmospheric exposure to the gas absorbing material. 
 
     
     
       28. The device of  claim 27 , wherein said gas absorbing material is discretely deposited, and wherein said passages are realized over the discrete deposits. 
     
     
       29. The device of  claim 27 , wherein said production process-compatible layer adheres to said base. 
     
     
       30. The device of  claim 27 , wherein said production process-compatible layer acts as an anchor for a microdevice constructed thereon. 
     
     
       31. The device of  claim 27 , wherein a microdevice is constructed in said production process-compatible layer.