USRE44657EExpiredUtilityPatentIndex 93
Semiconductor device

Assignee: MIYAKE HIROYUKIPriority: Jul 30, 2001Filed: May 15, 2012Granted: Dec 24, 2013
Est. expiryJul 30, 2021(expired)· nominal 20-yr term from priority
Inventors:MIYAKE HIROYUKI SHIONOIRI YUTAKA
H10K 59/8052H10K 59/80518H10D 86/60H10D 86/481H10D 30/6721H10D 86/40H10D 30/6715G09G 3/20G09G 2300/08G09G 3/3275G09G 2310/0286G09G 2310/0275G09G 3/3648H03K 19/01714G09G 2310/0218G09G 2310/027G09G 2310/0289G09G 2310/0267G09G 3/3208H10K 50/818H10K 50/82H10K 2102/3026H10K 59/123
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Claims
Abstract

A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor ( 154 ) formed between a gate electrode and an output electrode of a TFT ( 152 ), the electric potential of the gate electrode of the TFT ( 152 ) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor ( 155 ) formed between a gate electrode and an output electrode of a TFT ( 153 ) compensates for increasing the electric potential of the gate electrode of the TFT ( 152 ), and a larger load driving capability is obtained.
Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A semiconductor device comprising:
 first and second transistors each comprising an input terminal electrically connected to a first electric power source;   third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;   a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;   a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and   a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;   wherein each of the first through the fifth transistors have the same conductivity type,   wherein an output terminal of the first transistor and an output terminal of the third transistor are electrically connected,   wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected.   
     
     
       2. A semiconductor device according to  claim 1 , wherein one of the first and second capacitor means is formed by:
 two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and   an insulating material between the two electrodes.   
     
     
       3. A semiconductor device according to  claim 1 ,
 wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and   wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.   
     
     
       4. A semiconductor device according to  claim 1 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier. 
     
     
       5. A semiconductor device according to  claim 1 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element. 
     
     
       6. A semiconductor device according to  claim 1 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       7. A semiconductor device comprising:
 first and second transistors each comprising an input terminal electrically connected to a first electric power source;   third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;   a fifth transistor comprising an input terminal electrically connected to the first electric power source or to a third electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;   a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;   wherein each of the first through the sixth transistors have the same conductivity type,   wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected, and   wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected.   
     
     
       8. A semiconductor device according to  claim 7 , further comprising a capacitor between the gate electrode and an output terminal of the first transistor. 
     
     
       9. A semiconductor device according to  claim 8 , wherein the capacitor is formed by:
 two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and   an insulating material between the two electrodes.   
     
     
       10. A semiconductor device according to  claim 7 , further comprising a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the third transistor. 
     
     
       11. A semiconductor device according to  claim 10 , wherein one of the first and second capacitor means is formed by:
 two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and   an insulating material between the two electrodes.   
     
     
       12. A semiconductor device according to  claim 7 , farther comprising a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
 a second signal input portion for inputting a second signal to a gate electrode of the fifth transistor; and   a signal output portion for outputting a third signal from an output terminal of the second transistor and an output terminal of the fourth transistor.   
     
     
       13. A semiconductor device according to  claim 7 ,
 wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and   wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.   
     
     
       14. A semiconductor device according to  claim 7 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier. 
     
     
       15. A semiconductor device according to  claim 7 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element. 
     
     
       16. A semiconductor device according to  claim 7 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       17. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
 first and second transistors each comprising an input terminal electrically connected to a first electric power source;   third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;   a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;   a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and   a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;   wherein each of the first through the fifth transistors have the same conductivity type,   wherein an output terminal of the first transistor and an output terminal of the third transistor are electrically connected,   wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected.   
     
     
       18. A semiconductor device according to  claim 17 , wherein one of the first and second capacitor means is formed by:
 two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and   an insulating material between the two electrodes.   
     
     
       19. A semiconductor device according to  claim 17 ,
 wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and   wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.   
     
     
       20. A semiconductor device according to  claim 17 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier. 
     
     
       21. A semiconductor device according to  claim 17 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element. 
     
     
       22. A semiconductor device according to  claim 17 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       23. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
 first and second transistors each comprising an input terminal electrically connected to a first electric power source;   third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;   a fifth transistor comprising an input terminal electrically connected to the first electric power source or to a third electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;   a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;   wherein each of the first through the sixth transistors have the same conductivity type,   wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected, and   wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected.   
     
     
       24. A semiconductor device according to  claim 23 , further comprising a capacitor between the gate electrode and an output terminal of the first transistor. 
     
     
       25. A semiconductor device according to  claim 24 , wherein the capacitor is formed by:
 two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and   an insulating material between the two electrodes.   
     
     
       26. A semiconductor device according to  claim 23 , further comprising a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the third transistor. 
     
     
       27. A semiconductor device according to  claim 26 , wherein one of the first and second capacitor means is formed by:
 two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and   an insulating material between the two electrodes.   
     
     
       28. A semiconductor device according to  claim 23 , further comprising a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
 a second signal input portion for inputting a second signal to a gate electrode of the fifth transistor; and   a signal output portion for outputting a third signal from an output terminal of the second transistor and an output terminal of the fourth transistor.   
     
     
       29. A semiconductor device according to  claim 23 ,
 wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and   wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.   
     
     
       30. A semiconductor device according to  claim 23 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier. 
     
     
       31. A semiconductor device according to  claim 23 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element. 
     
     
       32. A semiconductor device according to  claim 23 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       33. A display device comprising:
 a pixel portion over a first substrate;   a gate signal line driver circuit over the first substrate, the gate signal line driver circuit comprising:
 first and second thin film transistors each comprising one of source and drain electrically connected to each other, 
 third and fourth thin film transistors each comprising a gate electrically connected to each other, 
 a fifth thin film transistor comprising another one of source and drain electrically connected to a gate of the first thin film transistor and a gate of the second thin film transistor, 
 a sixth thin film transistor comprising another one of source and drain electrically connected to the gate of the first thin film transistor and the gate of the second thin film transistor, and 
 a capacitor between a gate of the first thin film transistor and another one of source and drain of the first thin film transistor, 
 wherein the first through the sixth thin film transistors have the same conductivity type, and 
 wherein the another one of source and drain of the first thin film transistor and another one of source and drain of the third thin film transistor are electrically connected to each other; 
   a second substrate opposed to the first substrate with a sealant interposed therebetween; and   a liquid crystal provided in a space enclosed by the first substrate, the second substrate and the sealant,   wherein the gate signal line driver circuit is overlapped with the liquid crystal.   
     
     
       34. A display device according to claim 33, wherein another one of source and drain of the second thin film transistor and another one of source and drain of the fourth thin film transistor are electrically connected to each other. 
     
     
       35. A display device according to claim 33, wherein the one of source and drain of the first thin film transistor and the one of source and drain of the second thin film transistor are electrically connected to a first electric power source. 
     
     
       36. A display device according to claim 33, wherein the third and fourth thin film transistors each comprise one of source and drain electrically connected to a second electric power source. 
     
     
       37. A display device according to claim 33 further comprising a second capacitor between a gate of the third thin film transistor and the another one of source and drain of the third thin film transistor. 
     
     
       38. A display device according to claim 33, wherein the display device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       39. A display device comprising:
 a pixel portion over a first substrate;   a source signal line driver circuit over the first substrate, the source signal line driver circuit comprising:
 first and second thin film transistors each comprising one of source and drain electrically connected to each other, 
 third and fourth thin film transistors each comprising a gate electrically connected to each other, 
 a fifth thin film transistor comprising another one of source and drain electrically connected to a gate of the first thin film transistor and a gate of the second thin film transistor, 
 a sixth thin film transistor comprising another one of source and drain electrically connected to the gate of the first thin film transistor and the gate of the second thin film transistor, and 
 a capacitor between a gate of the first thin film transistor and another one of source and drain of the first thin film transistor, 
 wherein the first through the sixth thin film transistors have the same conductivity type, and 
 wherein the another one of source and drain of the first thin film transistor and another one of source and drain of the third thin film transistor are electrically connected to each other; 
   a second substrate opposed to the first substrate with a sealant interposed therebetween; and   a liquid crystal provided in a space enclosed by the first substrate, the second substrate and the sealant,   wherein the source signal line driver circuit is overlapped with the liquid crystal.   
     
     
       40. A display device according to claim 39, wherein another one of source and drain of the second thin film transistor and another one of source and drain of the fourth thin film transistor are electrically connected to each other. 
     
     
       41. A display device according to claim 39, wherein the one of source and drain of the first thin film transistor and the one of source and drain of the second thin film transistor are electrically connected to a first electric power source. 
     
     
       42. A display device according to claim 39, wherein the third and fourth thin film transistors each comprise one of source and drain electrically connected to a second electric power source. 
     
     
       43. A display device according to claim 39 further comprising a second capacitor between a gate of the third thin film transistor and the another one of source and drain of the third thin film transistor. 
     
     
       44. A display device according to claim 39, wherein the display device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       45. A display device comprising:
 a pixel portion over a first substrate;   a gate signal line driver circuit over the first substrate, the gate signal line driver circuit comprising:
 first and second thin film transistors each comprising one of source and drain electrically connected to each other, 
 third and fourth thin film transistors each comprising a gate electrically connected to each other, 
 a fifth thin film transistor comprising another one of source and drain electrically connected to a gate of the first thin film transistor and a gate of the second thin film transistor, and 
 a capacitor between a gate of the first thin film transistor and another one of source and drain of the first thin film transistor; 
 wherein the first through the fifth thin film transistors have the same conductivity type, and 
 wherein the another one of source and drain of the first thin film transistor and another one of source and drain of the third thin film transistor are electrically connected to each other; 
   a second substrate opposed to the first substrate with a sealant interposed therebetween; and   a liquid crystal provided in a space enclosed by the first substrate, the second substrate and the sealant,   wherein the gate signal line driver circuit is overlapped with the liquid crystal.   
     
     
       46. A display device according to claim 45, wherein another one of source and drain of the second thin film transistor and another one of source and drain of the fourth thin film transistor are electrically connected to each other. 
     
     
       47. A display device according to claim 45, wherein the one of source and drain of the first thin film transistor and the one of source and drain of the second thin film transistor are electrically connected to a first electric power source. 
     
     
       48. A display device according to claim 45, wherein the third and fourth thin film transistors each comprise one of source and drain electrically connected to a second electric power source. 
     
     
       49. A display device according to claim 45 further comprising a second capacitor between a gate of the third thin film transistor and the another one of source and drain of the third thin film transistor. 
     
     
       50. A display device according to claim 45, wherein the display device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera. 
     
     
       51. A display device comprising:
 a pixel portion over a first substrate;   a source signal line driver circuit over the first substrate, the source signal line driver circuit comprising:
 first and second thin film transistors each comprising one of source and drain electrically connected to each other, 
 third and fourth thin film transistors each comprising a gate electrically connected to each other, 
 a fifth thin film transistor comprising another one of source and drain electrically connected to a gate of the first thin film transistor and a gate of the second thin film transistor, and 
 a capacitor between a gate of the first thin film transistor and another one of source and drain of the first thin film transistor, 
 wherein the first through the fifth thin film transistors have the same conductivity type, and 
 wherein the another one of source and drain of the first thin film transistor and another one of source and drain of the third thin film transistor are electrically connected to each other; 
   a second substrate opposed to the first substrate with a sealant interposed therebetween; and   a liquid crystal provided in a space enclosed by the first substrate, the second substrate and the sealant,   wherein the source signal line driver circuit is overlapped with the liquid crystal.   
     
     
       52. A display device according to claim 51, wherein another one of source and drain of the second thin film transistor and another one of source and drain of the fourth thin film transistor are electrically connected to each other. 
     
     
       53. A display device according to claim 51, wherein the one of source and drain of the first thin film transistor and the one of source and drain of the second thin film transistor are electrically connected to a first electric power source. 
     
     
       54. A display device according to claim 51, wherein the third and fourth thin film transistors each comprise one of source and drain electrically connected to a second electric power source. 
     
     
       55. A display device according to claim 51 further comprising a second capacitor between a gate of the third thin film transistor and the another one of source and drain of the third thin film transistor. 
     
     
       56. A display device according to claim 51, wherein the display device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
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