Buffer compositions

Abstract

Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided.A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide (“ITO”), indium-zinc oxide (“IZO”), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula XV: where j≧0, k≧0 and 4≦(j+k)≦199, Q 1 and Q 2 are F or H, R f 2 is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, h=0 or 1, i=0 to 3, g=0 or 1, wherein the buffer composition has a work-function greater than 5.0 eV. In some embodiments, the H on the SO 3 may be replaced by either Li, Na, or K.

What is claimed is: 
     
       1. A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide (“ITO”), indium-zinc-oxide (“IZO”), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula XV: 
       
         
           
           
               
               
           
         
         where j≧0, k≧0 and 4≦(j+k)≦199, 
         Q 1  and Q 2  are F or H, R f   2  is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, 
         h=0 or 1, i=0 to 3, g=0 or 1, and 
         E 4  is H or an alkali metal, 
         wherein the buffer composition has a work-function greater than 5.0 eV. 
       
     
     
       2. An electric device comprising a buffer composition of  claim 1 . 
     
     
       3. A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide (“ITO”), indium-zinc oxide (“IZO”), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula: 
       
         
           
           
               
               
           
         
         where j≧0, k≧0 and 4≦(j+k)≦199, 
         Q 1  and Q 2  are F or H, 
         R f   2  is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, 
         h=0 or 1, i=0 to 3, g=0 or 1, and 
         E 5  is Li, Na, or K, 
       
       wherein the buffer composition has a work-function greater than 5.0 eV.