Manufacturing method for ink jet recording head chip, and manfuacturing method for ink jet recording head

Abstract

A manufacturing method for a substrate for an ink jet head, including formation of an ink supply port in a silicon substrate, the method includes a step of forming, on one side of the substrate, an etching mask layer having an opening at a position corresponding ink supply port; a step of forming unpenetrated holes through the opening of the etching mask layer in at least two rows in a longitudinal direction of the opening; and a step of forming the ink supply port by crystal anisotropic etching of the substrate in the opening.

What is claimed is: 
     
       1. A manufacturing method for a substrate for an ink jet head including an energy generating element for generating energy used to eject ink and an ink supply port for supplying the element with ink, said method comprising:
 providing a substrate having the element, a sacrificial layer of material having an etching speed which is higher than that of silicon on an area where said ink supply port is going to be formed at a side of a first surface, and an etching mask layer having an opening at a position corresponding to the ink supply port on a second surface which is a back surface of opposite the first surface of said substrate and which has a plane direction < 100 >; 
 forming recesses in the first surface in substrate in an area of the substrate exposed by the opening at the second surface in first and second rows extending in a longitudinal direction of said opening in sides of a center of said opening with respect to a widthwise direction of said opening, 
 wherein said recesses in the first and second rows include a recess satisfying
   T−(X−L/2)×tan 54.7°≧D≧T−X×tan 54.7°
 
 
 where L (μm) is a length of the sacrificial layer in a widthwise direction of the sacrificial layer, T (μm) is a thickness of said substrate, X (μm) is a distance from a center of said sacrificial layer in a the widthwise direction to centers of said recesses, and D is a depth of said recesses; and 
 forming said ink supply port by crystal anisotropic etching of said substrate through said opening. 
 
     
     
       2. The method according to  claim 1 , wherein said recesses are arranged symmetrically with respect to a center line extending in a longitudinal direction of said opening. 
     
     
       3. The method according to  claim 1 , wherein said etching mask layer is formed such that a length Y (μm) of said opening to be formed, measured in a widthwise direction thereof, satisfies
   (T/tan 54.7°)×2+L≧Y.
 
 
     
     
       4. The method according to  claim 1 , wherein a forming condition of said recesses is changed depending on a thickness of said substrate measured beforehand. 
     
     
       5. The method according to  claim 4 , wherein a depth of said recesses is changed depending on a thickness of said substrate measured beforehand. 
     
     
       6. The method according to  claim 4 , wherein a distance from a center line of said area extending in a longitudinal direction of said area to centers of said recesses in the rows is changed depending on a thickness of said substrate measured beforehand. 
     
     
       7. The method according to  claim 1 , wherein there are provided a plurality of such openings which are formed adjacent to each other in a widthwise direction of said opening, and wherein dimensions of adjacent openings are different from each other. 
     
     
       8. The method according to  claim 7 , wherein a dimension Y 1  of one of said adjacent openings measured in a widthwise direction thereof, and a dimension Y 2  of the other one of said adjacent openings measured in a widthwise direction thereof satisfy,
   (T/tan 54.7°)×2+L≧Y1,
 
   (T/tan 54.7°)×2+L≧Y2, and
 
   Y1>Y2, or Y2<Y1. 
 
     
     
       9. The method according to  claim 1 , further comprising a step of forming a passivation layer having an etching-resistant property so as to cover said sacrificial layer. 
     
     
       10. The method according to  claim 1 , wherein said recesses are formed by laser.