USRE45235EActiveUtility

Organic light emitting diode display and fabricating method thereof

52
Assignee: CHOI HEEDONGPriority: Aug 26, 2008Filed: Aug 29, 2012Granted: Nov 11, 2014
Est. expiryAug 26, 2028(~2.1 yrs left)· nominal 20-yr term from priority
Inventors:Heedong Choi
H10P 14/683H10K 59/878H10K 59/805H10D 30/663H10K 59/1213H10K 59/122H10K 59/123H10K 30/82H10B 41/27Y02E10/549
52
PatentIndex Score
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Cited by
23
References
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Claims

Abstract

An organic light emitting diode display device includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer; a first electrode contacting to the drain electrode of the drive TFT; a bank pattern exposing an aperture area of a pixel; an organic layer formed on the first electrode; and a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An organic light emitting diode display device comprising:
 a switch first TFT and a drive second TFT formed on a substrate; 
 an overcoat layer formed on the TFTs; 
 a drain contact hole exposing portions of a one of source and drain electrode electrodes of the drive second TFT by removing portions of the overcoat layer; 
 a first electrode contacting to the one of source and drain electrode electrodes of the drive second TFT; 
 a bank pattern exposing an aperture area of a pixel; 
 an organic layer formed on the first electrode; and 
 a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed and the bank pattern is formed between the first electrode and the organic layer in the contact hole. 
 
     
     
       2. The device of the  claim 1 , wherein the switch first TFT comprises:
 a gate electrode connecting to a gate line; and 
 a first active pattern for forming a first channel between a source electrode and a drain electrode, 
 wherein an edge of the first active pattern is located inner side from an edge of the gate electrode of the switch first TFT. 
 
     
     
       3. The device of the  claim 2 , wherein the first channel includes at least selected one of an U-shape, an L-shape, and an I-shape. 
     
     
       4. The device of the  claim 1 , wherein the drive second TFT comprises:
 a gate electrode connecting to a drain electrode of the switch first TFT; and 
 a second active pattern for forming a second channel between a source electrode and a drain electrode, wherein an edge of the second active pattern is located inner side from an outermost edge of the gate electrode of the drive second TFT. 
 
     
     
       5. The device of the  claim 4 , wherein the second channel includes an “O”-shape. 
     
     
       6. The device of the  claim 1 , wherein the bank pattern includes at least selected one of an inorganic material and an organic material. 
     
     
       7. The device of the  claim 6 , wherein the bank pattern includes selected one of a silicon oxide, a silicon nitride, a photoacryl, and a polyimide. 
     
     
       8. The device of the  claim 1 , wherein the first electrode includes an opaque cathode electrode, and the second electrode includes a transparent anode electrode. 
     
     
       9. The device of the  claim 1 , wherein the first electrode includes an anode electrode having a reflection electrode, and the second electrode includes a transparent cathode electrode. 
     
     
       10. The device of the  claim 9 , wherein the first electrode includes selected one of a triple-layer structure having two transparent metals and a reflection metal therebetween, and a double-layer structure having a transparent metal and a reflection metal.

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