Thin-film transistor and method of making same

Abstract

A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

What is claimed is: 
     
       1. A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate; 
 depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand; 
 forming a photoresist having a predetermined width on the second metal layer; 
 anisotropically etching the first and second metal layers so such that the first metal layer and the second metal layer have the same width of the photoresist by using the photoresist as a mask, 
 isotropically etching the second metal layer such that the second metal layer is narrower than the first metal layer by about 1 μm to about 4 μm by using the photoresist as a mask, thus forming a gate having a double-layered structure including the first and second metal layers; and removing the photoresist. 
 
     
     
       2. The method of making a thin-film transistor as claimed in  claim 1 , further comprising the steps of:
 forming a first insulating layer on the substrate including the gate; 
 forming a semiconductor layer and an ohmic contact layer on a portion of the first insulating layer at a location corresponding to the gate; 
 forming a source electrode and drain electrode extending onto the first insulating layer on two sides of the ohmic contact layer, and removing a portion of the ohmic contact layer exposed between the source and drain electrodes; and 
 forming a second insulating layer covering the semiconductor layer, the source electrode, the drain electrode and the first insulating layer. 
 
     
     
       3. The method of making a thin-film transistor as claimed in  claim 1 , wherein the first metal layer includes Al, Cu, or Au. 
     
     
       4. The method of making a thin-film transistor as claimed in  claim 1 , wherein the second metal layer includes Mo, Ta, or Co. 
     
     
       5. The method of making a thin-film transistor as claimed in  claim 1 , wherein the first and second metal layers are removed via a dry etching method. 
     
     
       6. The method of making a thin-film transistor as claimed in  claim 1 , wherein the second metal layer is etched with an etching solution prepared with a mixture of phosphoric acid, acetic acid and nitric acid. 
     
     
       7. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer;   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm.   
     
     
       8. The method of  claim 7 , wherein the first and second metal layers are patterned so that the first metal layer has a first and a second side portion being exposed from the second metal layer, each side portion being at least about 0.5 μm in width. 
     
     
       9. The method of  claim 8 , wherein each side portion of the first metal layer is exposed so that each side portion is less than about 2 μm in width. 
     
     
       10. The method of  claim 7 , wherein the patterning step is such that the second metal layer is etched faster than the first etching layer. 
     
     
       11. The method of  claim 10 , A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate, 
 forming a second metal layer on the first metal layer; 
 simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm, wherein: 
 the patterning step is such that the second metal layer is etched faster than the first etching layer; and  
 the second metal layer is wet etched, and the first metal layer is dry etched. 
 
     
     
       12. The method of  claim 10 , wherein both the first and second metal layers are wet etched. 
     
     
       13. The method of  claim 7 , A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate; 
 forming a second metal layer on the first metal layer; 
 simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm, wherein the patterning step comprises: 
 isotropically etching the second metal layer; and 
 anisotropically etching the first metal layer. 
 
     
     
       14. The method of  claim 7 , wherein no masking step is required between the formation of the first and second metal layers. 
     
     
       15. The method of  claim 7 , A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate, 
 forming a second metal layer on the first metal layer; 
 simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm, wherein the patterning step does not require processing of a photoresist before etching. 
 
     
     
       16. A method of waking a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum;   depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand;   forming a single photoresist having predetermined width on the second metal layer;   patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, the first metal layer being etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; and   removing the photoresist.   
     
     
       17. The method of making a thin film transistor as claimed in  claim 16 , further comprising the steps of:
 forming a first insulating layer on the substrate including the gate;   forming a semiconductor layer and an ohmic contact layer on a portion of the first insulating layer at a location corresponding to the gate;   forming a source electrode and a drain electrode extending onto the first insulating layer on two sides of the ohmic contact layer, and removing a portion of the ohmic contact layer exposed between the source and the drain electrodes; and   forming a second insulating layer covering the semiconductor layer, the source electrode, the drain electrode and the first insulating layer.   
     
     
       18. The method of making a thin film transistor as claimed in  claim 16 , wherein the first and second metal layers are sequentially deposited via sputtering or a chemical vapor deposition method without breaking a vacuum state. 
     
     
       19. The method of making a thin film transistor as claimed in  claim 16 , wherein the first metal layer has thickness of about 500 Å to about 4000 Å. 
     
     
       20. The method of making a thin film transistor as claimed in  claim 16 , wherein the second metal layer includes Mo, Ta or Co. 
     
     
       21. The method of making a thin film transistor as claimed in  claim 16 , A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum, wherein the first metal layer has a thickness of about 500 Å to about 2000 Å; 
 depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand; 
 forming a single photoresist having predetermined width on the second metal layer; 
 patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, the first metal layer being etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; and 
 removing the photoresist. 
 
     
     
       22. The method of making a thin film transistor as claimed in  claim 16 , wherein two side portions of the first metal layer having no second metal layer deposited thereon have substantially the same width as each other. 
     
     
       23. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 the patterning step is such that the second metal layer is etched faster than the first metal layer; 
 the second metal layer is wet etched, and the first metal layer is dry etched; 
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm. 
   
     
     
       24. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 the patterning step comprises:
 isotropically etching the second metal layer; and 
 anisotropically etching the first metal layer; 
 
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm. 
   
     
     
       25. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:   the patterning step does not require processing of a photoresist before etching;
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm. 
   
     
     
       26. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; 
 lateral surfaces of the second metal layer have a substantially rectangular shape; and 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm. 
   
     
     
       27. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; 
 lateral surfaces of the second metal layer are flat so that the second metal layer has a substantially rectangular cross-sectional area; and 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm. 
   
     
     
       28. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; 
 lateral surfaces of the second metal layer are inclined so that the second metal layer has a substantially trapezoidal cross-sectional area; and 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm. 
   
     
     
       29. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm; and 
 the width of the first metal layer is measured along the top edge of the first metal layer that is substantially parallel to the substrate. 
   
     
     
       30. A method of forming a thin film transistor comprising:
 forming a first metal layer on a substrate,   forming a second metal layer on the first metal layer, wherein no masking step is required between the formation of the first and second metal layers; and   simultaneously patterning the first and second metal layers to form a double-layered metal gate, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; 
 a total width of the first metal layer is greater than a total width of the second metal layer by about 1 to 4 μm; and 
   the width of the second metal layer is measured along a top edge of the second metal layer that is substantially parallel to the substrate.   
     
     
       31. A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum;   depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand, wherein the first and second metal layers are sequentially deposited via sputtering or a chemical vapor deposition method without breaking a vacuum state;   forming a single photoresist having predetermined width on the second metal layer; and   patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 the first metal layer is etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; and 
   removing the photoresist.   
     
     
       32. The method of making a thin film transistor as claimed in claim 31, further comprising the steps of:
 forming a first insulating layer on the substrate including the gate;   forming a semiconductor layer and an ohmic contact layer on a portion of the first insulating layer at a location corresponding to the gate;   forming a source electrode and a drain electrode extending onto the first insulating layer on two sides of the ohmic contact layer, and removing a portion of the ohmic contact layer exposed between the source and the drain electrodes; and   forming a second insulating layer covering the semiconductor layer, the source electrode, the drain electrode and the first insulating layer.   
     
     
       33. The method of making a thin film transistor as claimed in claim 31, wherein the first metal layer has thickness of about 500 Å to about 4000 Å. 
     
     
       34. The method of making a thin film transistor as claimed in claim 31, wherein the second metal layer includes Mo, Ta or Co. 
     
     
       35. The method of making a thin film transistor as claimed in claim 31, wherein the first metal layer has a thickness of about 500 Å to about 2000 Å. 
     
     
       36. The method of making a thin film transistor as claimed in claim 31, wherein two side portions of the first metal layer having no second metal layer deposited thereon have substantially the same width as each other. 
     
     
       37. The method of making a thin film transistor as claimed in claim 31, wherein lateral surfaces of the second metal layer have a substantially rectangular shape. 
     
     
       38. The method of making a thin film transistor as claimed in claim 31, wherein lateral surfaces of the second metal layer are flat so that the second metal layer has a substantially rectangular cross-sectional area. 
     
     
       39. The method of making a thin film transistor as claimed in claim 31, wherein lateral surfaces of the second metal layer are inclined so that the second metal layer has a substantially trapezoidal cross-sectional area. 
     
     
       40. The method of making a thin film transistor as claimed in claim 31, wherein the width of the first metal layer is measured along the top edge of the first metal layer that is substantially parallel to the substrate. 
     
     
       41. The method of making a thin film transistor as claimed in claim 31, wherein the width of the second metal layer is measured along a top edge of the second metal layer that is substantially parallel to the substrate. 
     
     
       42. A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum;   depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand;   forming a single photoresist having predetermined width on the second metal layer;   patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 the first metal layer is etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; 
   removing the photoresist;   forming a first insulating layer on the substrate including the gate;   forming a semiconductor layer and an ohmic contact layer on a portion of the first insulating layer at a location corresponding to the gate;   forming a source electrode and a drain electrode extending onto the first insulating layer on two sides of the ohmic contact layer, and removing a portion of the ohmic contact layer exposed between the source and the drain electrodes; and   forming a second insulating layer covering the semiconductor layer, the source electrode, the drain electrode and the first insulating layer.   
     
     
       43. A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum, wherein the first metal layer has thickness of about 500 Å to about 4000 Å;   depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand;   forming a single photoresist having predetermined width on the second metal layer;   patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 the first metal layer is etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; and 
   removing the photoresist.   
     
     
       44. A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum;   depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand, wherein the second metal layer includes Mo, Ta or Co;   forming a single photoresist having predetermined width on the second metal layer;   patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 the first metal layer is etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; and 
   removing the photoresist.   
     
     
       45. A method of making a thin-film transistor, comprising the steps of:
 depositing a first metal layer on a substrate, the first metal layer including aluminum;   depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand;   forming a single photoresist having predetermined width on the second metal layer;   patterning the first and second metal layers simultaneously in a single etching step using the single photoresist as a mask, so that the first metal layer has a substantially trapezoidal cross-sectional area with a top edge that is substantially parallel to the substrate, two side portions of the first metal layer having no second metal layer deposited thereon have substantially the same width as each other, wherein:
 a first portion of the top edge is in contact with the second metal layer; 
 a second portion of the top edge is not in contact with the second metal layer; and 
 the first metal layer is etched to have a width greater than a width of the second metal layer by about 1 to 4 μm; and 
   removing the photoresist.