Organic transistor having a non-planar semiconductor-insulating layer interface

Abstract

Organic transistors having a nonplanar interface between the insulating layer and the semiconductor layer are provided, along with methods for manufacturing.

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 
     
       1. An organic transistor, comprising:
 (a) a substrate; 
 (b) a source electrode and a drain electrode, each disposed on the substrate; 
 (c) a planar semiconductor layer of a first organic material spanning between the source electrode and the drain electrode the; 
 (d) a non-planar semiconductor layer of a second organic material disposed on the planar semiconductor layer, the non-planar semiconductor layer having a protuberance on a top surface; and 
 (e) an insulating layer disposed on the source electrode, the drain electrode, and the protuberance on the top surface of the non planar semiconductor layer, wherein the insulating layer includes at least a first thickness spanning the protuberance and a second thickness that is larger than the first thickness. 
 
     
     
       2. The organic transistor of  claim 1 , further comprising a gate electrode disposed on the insulating layer. 
     
     
       3. The organic transistor of  claim 2 , wherein the source electrode, gate electrode, and drain electrode are each independently selected from the group consisting of a metal and a conductive polymer. 
     
     
       4. The organic transistor of  claim 1 , wherein the substrate is a polymer. 
     
     
       5. The organic transistor of  claim 4 , wherein the polymer is polyethylene terephthalate. 
     
     
       6. The organic transistor of  claim 1 , wherein the first organic material and the second organic material are independently selected from the group consisting of a thiophene polymer and a polyacene. 
     
     
       7. The organic transistor of  claim 1 , wherein the source electrode and the drain electrode each have a thickness, and wherein the combined planar and non-planar semiconductor layers have a thickness that is larger than the thicknesses of the source electrode and the drain electrode. 
     
     
       8. The organic transistor of  claim 1 , wherein the first organic material of the planar semiconductor layer and the second organic material of the non-planar semiconductor layer are the same. 
     
     
       9. The organic transistor of  claim 1 , wherein the non-planar semiconductor layer is dome-shaped. 
     
     
       10. An organic transistor, comprising:
 a source electrode and a drain electrode;   a planar semiconductor layer of a first organic material spanning between the source electrode and the drain electrode;   a non-planar semiconductor layer of a second organic material disposed on at least a portion of the planar semiconductor layer, wherein the non-planar semiconductor layer has a protuberance on a top surface; and   an insulating layer disposed on at least a portion of the source electrode, at least a portion of the drain electrode, and at least a portion of the protuberance, wherein the insulating layer includes at least a first thickness spanning the protuberance and a second thickness that is larger than the first thickness.   
     
     
       11. The organic transistor of claim 10, further comprising a gate electrode disposed on the insulating layer. 
     
     
       12. The organic transistor of claim 11, wherein the source electrode, gate electrode, and drain electrode are each independently selected from the group consisting of a metal and a conductive polymer. 
     
     
       13. The organic transistor of claim 10, further comprising a substrate on which the source electrode and the drain electrode are disposed. 
     
     
       14. The organic transistor of claim 10, wherein the first organic material and the second organic material are independently selected from the group consisting of a thiophene polymer and a polyacene. 
     
     
       15. The organic transistor of claim 10, wherein the source electrode and the drain electrode each have a thickness, and wherein the combined planar and non-planar semiconductor layers have a thickness that is larger than the thicknesses of the source electrode and the drain electrode. 
     
     
       16. The organic transistor of claim 10, wherein the first organic material and the second organic material are the same. 
     
     
       17. The organic transistor of claim 10, wherein the non-planar semiconductor layer is dome-shaped. 
     
     
       18. A method of manufacturing an organic transistor, the method comprising:
 providing a source electrode and a drain electrode in a spaced-apart manner;   forming a planar semiconductor layer of a first organic material spanning between the source electrode and the drain electrode;   forming a non-planar semiconductor layer of a second organic material disposed on at least a portion of the planar semiconductor layer, wherein the non-planar semiconductor layer has a protuberance on a top surface; and   forming an insulating layer disposed on at least a portion of the source electrode, at least a portion of the drain electrode, and at least a portion of the protuberance, wherein the insulating layer includes at least a first thickness spanning the protuberance and a second thickness that is larger than the first thickness.   
     
     
       19. The method of claim 18, further comprising depositing a gate electrode on the insulating layer. 
     
     
       20. The method of claim 19, wherein the source electrode, gate electrode, and drain electrode are each independently selected from the group consisting of a metal and a conductive polymer. 
     
     
       21. The method of claim 18, further comprising providing a substrate, wherein said providing a source electrode and a drain electrode in a spaced-apart manner includes depositing the source electrode and the drain electrode on the substrate. 
     
     
       22. The method of claim 18, wherein the first organic material and the second organic material are independently selected from the group consisting of a thiophene polymer and a polyacene. 
     
     
       23. The method of claim 18, wherein the source electrode and the drain electrode each have a thickness, and wherein the combined planar and non-planar semiconductor layers have a thickness that is larger than the thicknesses of the source electrode and the drain electrode. 
     
     
       24. The method of claim 18, wherein the first organic material and the second organic material are the same. 
     
     
       25. The method of claim 18, wherein the non-planar semiconductor layer is dome-shaped. 
     
     
       26. An organic transistor, comprising:
 a gate electrode, a source electrode, and a drain electrode;   a planar semiconductor layer of a first organic material spanning between the source electrode and the drain electrode;   a non-planar semiconductor layer of a second organic material abutting at least a portion of the planar semiconductor layer, wherein the non-planar semiconductor layer has a protuberance; and   an insulating layer disposed between the protuberance and the gate electrode, wherein the insulating layer includes at least a first thickness spanning the protuberance and a second thickness that is larger than the first thickness.