Imaging device

Abstract

A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.

What is claimed is: 
     
       1. A solid-state imaging device comprising:
 an optical filter in which a filter layer is formed on a transparent substrate;   a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and   a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together, wherein   the filter layer is a dielectric multilayer film in which plural dielectric layers having a high refractive index and plural dielectric layers having a low refractive index are alternately stacked and is formed to cover a portion corresponding to the pixel area and a part of an area located around the pixel area on a surface of the transparent substrate on a side opposed to the solid-state imaging component, and   the bonding layer is provided to be at least in contact with, in a peripheral portion of surfaces of the solid-state imaging component and the optical filter opposed to each other, a portion not covered by the filter layer and a peripheral portion of the filter layer on the transparent substrate.   
     
     
       2. The solid-state imaging device according to  claim 1 , wherein
 a cavity section is provided between the optical filter and the solid-state imaging component opposed to each other,   in the solid-state imaging component, the pixel area is provided such that the pixels receive light made incident via the cavity section, and   the bonding layer is provided to surround a periphery of the cavity section between the optical filter and the solid-state imaging component opposed to each other.   
     
     
       3. The solid-state imaging device according to  claim 1 , wherein the bonding layer is provided over the surfaces of the optical filter and the solid-state imaging component opposed to each other. 
     
     
       4. The solid-state imaging device according to  claim 2 , wherein
 a side end face of the filter layer inclines to be reduced in width from a side of the transparent substrate toward a side of the solid-state imaging component, and   the bonding layer is provided to cover a tilting side end face of the filter layer.   
     
     
       5. A method of manufacturing a solid-state imaging device, comprising the steps of:
 forming an optical filter by forming a filter layer on a transparent substrate;   forming a solid-state imaging component by providing, in a pixel area of a semiconductor substrate, plural pixels which receive light; and   sticking the optical filter and the solid-state imaging component together by providing a bonding layer between the optical filter and the solid-state imaging component opposed to each other such that the pixels receive light made incident via the filter layer, wherein   in the step of forming an optical filter, the filter layer is formed by providing, to cover a portion corresponding to the pixel area and a part of an area located around the pixel area on a surface of the transparent substrate on a side opposed to the solid-state imaging component, a dielectric multilayer film in which plural dielectric layers having a high refractive index and plural dielectric layers having a low refractive index are alternately stacked, and   in the step of sticking the optical filter and the solid-state imaging component together, the optical filter and the solid-state imaging component are stuck together by providing the bonding layer to be at least in contact with, in a peripheral portion of a surface opposed to the semiconductor substrate on the transparent substrate, a portion not covered by the filter layer and a peripheral portion of the filter layer.   
     
     
       6. The method of manufacturing a solid-state imaging device according to  claim 5 , wherein
 in the step of forming an optical filter, a plurality of the optical filters are formed on the transparent substrate,   in the step of forming a solid-state imaging component, a plurality of the solid-state imaging components are formed on the semiconductor substrate,   in the step of sticking the optical filter and the solid-state imaging component together, the transparent substrate and the semiconductor substrate are aligned and stuck together such that each of the plural optical filters and each of the plural solid-state imaging components correspond to each other, and   dicing is carried out for the transparent substrate and the semiconductor substrate stuck together to divide transparent substrate and the semiconductor substrate into plural solid-state imaging devices.   
     
     
       7. The method of manufacturing a solid-state imaging device according to  claim 6 , wherein, in the step of forming an optical filter, the filter layer is formed on the transparent substrate by a lift-off method. 
     
     
       8. The method of manufacturing a solid-state imaging device according to  claim 7 , wherein
 the step of forming an optical filter includes the steps of:
 forming a photoresist pattern to be located above an area other than an area where the filter layer is formed on a surface of the transparent substrate; 
 forming, to cover an upper surface of the transparent substrate and an upper surface of the photoresist pattern, a filter layer on the surface of the transparent substrate on which the photoresist pattern is formed; and 
 removing the photoresist pattern, the upper surface of which is covered with the filter layer, and 
   in the step of forming a photoresist pattern, the photoresist pattern is formed to have a sectional shape having small width on a side close to the transparent substrate and gradually having larger width farther away from the transparent substrate.   
     
     
       9. The method of manufacturing a solid-state imaging device according to  claim 7 , wherein
 in the step of forming an optical filter, a notch pattern same as a notch shape formed on the semiconductor substrate is formed on the transparent substrate simultaneously with the formation of the filter layer, and   in the step of sticking the optical filter and the solid-state imaging component together, the semiconductor substrate and the transparent substrate are aligned using the notch shape of the semiconductor substrate and the notch pattern of the transparent substrate.   
     
     
       10. An electronic apparatus comprising:
 an optical filter in which a filter layer is formed on a transparent substrate;   a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and   a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together, wherein   the filter layer is a dielectric multilayer film in which plural dielectric layers having a high refractive index and plural dielectric layers having a low refractive index are alternately stacked and is formed to cover a portion corresponding to the pixel area and a part of an area located around the pixel area on a surface of the transparent substrate on a side opposed to the solid-state imaging component, and   the bonding layer is provided to be at least in contact with, in a peripheral portion of surfaces of the solid-state imaging component and the optical filter opposed to each other, a portion not covered by the filter layer and a peripheral portion of the filter layer on the transparent substrate.   
     
     
       11. An imaging device comprising:
 an optical filter in which a filter layer is formed on a transparent substrate of the optical filter;   a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and   a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together, wherein   the filter layer is a dielectric multilayer film in which plural dielectric layers having a high refractive index and plural dielectric layers having a low refractive index are alternately stacked and is formed to cover a portion corresponding to the pixel area and a part of a first area located outside of the pixel area on a surface of the transparent substrate on a side opposed to the solid-state imaging component,   the bonding layer is provided to be at least in contact with the transparent substrate of the optical filter and the filter layer of the optical filter,   the solid-state imaging component includes a wiring layer provided on the semiconductor substrate,   the wiring layer includes a pad electrode in a portion corresponding to the first area,   the pad electrode is electrically connected to a bump, the bump being provided, via a conductive layer, on a side of the solid-state imaging component opposite to an incident side of the light,   an insulating layer is provided between the semiconductor substrate and the conductive layer, and   a side end face of the filter layer inclines to be reduced in width from a side of the transparent substrate toward a side of the solid-state imaging component.   
     
     
       12. The imaging device according to claim 11, wherein
 the bonding layer sticks the optical filter and the solid-state imaging component together in non-directly-touching fashion.   
     
     
       13. The imaging device according to claim 11, wherein
 the bonding layer is provided to be in direct contact with the solid-state imaging component.   
     
     
       14. The imaging device according to claim 11, wherein
 the bonding layer is provided not to be in direct contact with the solid-state imaging component.   
     
     
       15. The imaging device according to claim 14, wherein
 the bonding layer is provided to be in contact with the solid-state imaging component via a low-refractive index layer provided on the solid-state imaging component.   
     
     
       16. The imaging device according to claim 11, wherein
 the bonding layer is provided on a part of a bottom surface of the filter layer facing the solid-state imaging component.   
     
     
       17. The imaging device according to claim 16, wherein
 a cavity section is provided on a remaining part of the bottom surface of the filter layer other than the part of the bottom surface of the filter layer.   
     
     
       18. The imaging device according to claim 11, wherein
 the bonding layer is provided on an entire area of a bottom surface of the filter layer facing the solid-state imaging component.   
     
     
       19. The imaging device according to claim 11, further comprising:
 a low-refractive index layer that is arranged on the solid-state imaging component, wherein   the solid-state imaging component is stuck with the optical filter by the bonding layer on an upper surface of the low-refractive index layer.   
     
     
       20. The imaging device according to claim 19, further comprising:
 micro lenses provided in the low-refractive index layer such that the micro lenses are covered by the low-refractive index layer.   
     
     
       21. The imaging device according to claim 19, wherein
 the thickness of the low-refractive index layer is about 0.3 μm to 5 μm.   
     
     
       22. The imaging device according to claim 11, wherein
 the bonding layer is provided over entire surfaces of the solid-state imaging component and the optical filter.   
     
     
       23. The imaging device according to claim 11, wherein
 the bonding layer is provided in a center portion of surfaces of the solid-state imaging component and the optical filter besides a peripheral portion of the surfaces.   
     
     
       24. The imaging device according to claim 11, wherein
 the solid-state imaging component includes a logic circuit component electrically connected to the plural pixels.   
     
     
       25. The solid-state imaging device according to claim 11, wherein
 a via hole is formed to expose a part of the pad electrode in the first area, and   the insulating layer is provided between the semiconductor substrate and the conductive layer at least in the via hole.   
     
     
       26. The solid-state imaging device according to claim 25, wherein
 the via hole includes a taper surface.   
     
     
       27. The solid-state imaging device according to claim 11, wherein
 the insulating layer includes an opening at a portion corresponding to the pad electrode, and   the conductive layer is electrically connected with the pad electrode via the opening.   
     
     
       28. A solid-state imaging device comprising:
 an optical filter in which a filter layer is formed on a transparent substrate of the optical filter;   a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a first semiconductor substrate, the solid-state imaging component including a first multilayer wiring layer provided on the first semiconductor substrate, the first multilayer wiring layer including a plurality of wiring layers, the first multilayer wiring layer extending in an in-plane direction parallel to layers of the solid-state imaging device;   a logic circuit component stacked on the solid-state imaging component and including a second semiconductor substrate and a second multilayer wiring layer provided on the second semiconductor substrate, the second multilayer wiring layer including a plurality of wiring layers, the second multilayer wiring layer extending in the in-plane direction parallel to the layers of the solid-state imaging device, the first multilayer wiring layer and the second multilayer wiring layer being arranged to face each other,   a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together, wherein   the filter layer is a dielectric multilayer film in which plural dielectric layers having a high refractive index and plural dielectric layers having a low refractive index are alternately stacked and is formed to cover a portion corresponding to the pixel area and a part of a first area located outside of the pixel area on a surface of the transparent substrate on a side opposed to the solid-state imaging component,   the second multilayer wiring layer includes a pad electrode in a portion corresponding to the first area,   the pad electrode is electrically connected to a bump, the bump being provided, via a conductive layer, on a side of the logic circuit component opposite to an incident side of the light, the conductive layer including a first part and a second part, the first part extending in the in-plane direction, the first part being connected the bump, one end of the second part being connected to the first part at a connecting point, another end of the second part being connected to the pad electrode, the connecting point being located between the another end of the second part and the bump in a plane view of the solid-state imaging device, the second part being tilted with respect to a perpendicular line perpendicular to the layers of the solid-state imaging device such that the one end of the second part is located closer to the pixel area than the another end of the second part in the plane view, and   a side end face of the filter layer inclines to be reduced in width from a side of the transparent substrate toward a side of the solid-state imaging component.   
     
     
       29. The solid-state imaging device according to claim 28, wherein
 an insulating layer is provided between the second semiconductor substrate and the conductive layer.   
     
     
       30. The solid-state imaging device according to claim 29, wherein
 a via hole is formed to expose a part of the pad electrode in the first area, and   the insulating layer is provided between the second semiconductor substrate and the conductive layer at least in the via hole.   
     
     
       31. The solid-state imaging device according to claim 30, wherein
 the via hole includes a taper surface.   
     
     
       32. The solid-state imaging device according to claim 29, wherein
 the insulating layer includes an opening at a portion corresponding to the pad electrode, and   the conductive layer is electrically connected with the pad electrode via the opening.