Display device using semiconductor light emitting device and method of fabricating the same

Abstract

A display device using a semiconductor light emitting device and a method of fabricating the semiconductor light emitting device are disclosed. The display device includes a substrate, a plurality of first electrodes disposed on the substrate, an anisotropic conductive film disposed on the substrate provided with the first electrodes, a plurality of semiconductor light emitting devices disposed on the anisotropic conductive film layer, electrically connected to the first electrodes, and constituting individual pixels, and a plurality of second electrodes disposed between the semiconductor light emitting devices and electrically connected to the semiconductor light emitting devices. Thus, alignment of the semiconductor light emitting device array may be simplified by use of an anisotropic conductive film Due to excellent brightness, the semiconductor light emitting devices, which are small in size, may form individual sub-pixels. In addition, the distance between the semiconductor light emitting devices is sufficiently long to embody a flexible display device.

The invention claimed is: 
     
       1. A display device using a semiconductor light emitting device comprising:
 a substrate; 
 a plurality of first electrodes disposed on the substrate; 
 a plurality of semiconductor light emitting devices constituting individual pixels; 
 an anisotropic conductive film layer disposed on the substrate provided with the plurality of first electrodes, and electrically connecting the plurality of semiconductor light emitting devices with the first electrodes; 
 a plurality of semiconductor light emitting devices disposed on the anisotropic conductive film layer, electrically connected to the plurality of first electrodes, and constituting individual pixels; 
 a plurality of second electrodes disposed between the plurality of semiconductor light emitting devices and electrically connected to the plurality of semiconductor light emitting devices; and 
 a wavelength converting layer disposed on the plurality of semiconductor light emitting devices, wherein: 
 red, green, and blue sub-pixels constitute a one pixel or red, green, blue, and white sub-pixels constitute a one pixel, 
 the plurality of semiconductor light emitting devices are blue semiconductor light emitting devices, 
 the wavelength converting layer includes red portions having a red fluorescent (phosphor) material and green portions having a green fluorescent (phosphor) material, 
 the red portions and the green portions are bar-shaped portions extending in a direction parallel to the plurality of first electrodes, and 
 the red portions and the green portions are alternately disposed in a direction parallel to the plurality of second electrodes. 
 
     
     
       2. The display device according to  claim 1 , wherein:
 the plurality of semiconductor light emitting devices are aligned in plural rows; and 
 the plurality of second electrodes are disposed between the plural rows of the plurality of semiconductor light emitting devices. 
 
     
     
       3. The display device according to  claim 2 , wherein the plurality of first electrodes and the plurality of second electrodes comprise bar-shaped electrodes. 
     
     
       4. The display device according to  claim 1 , wherein the plurality of second electrodes are electrically connected to the plurality of semiconductor light emitting devices via connection electrodes protruding from the plurality of second electrodes. 
     
     
       5. The display device according to  claim 1 , wherein the plurality of first electrodes and the plurality of second electrodes are aligned to be perpendicular to each other. 
     
     
       6. The display device according to  claim 1 , wherein each of the plurality of semiconductor light emitting devices has one side having a length of 50 μm or less. 
     
     
       7. The display device according to  claim 1 , wherein further comprising:
 a barrier wall is further disposed between the plurality of semiconductor light emitting devices. 
 
     
     
       8. The display device according to  claim 7 , wherein the barrier wall comprises a black or white insulating material. 
     
     
       9. The display device according to  claim 1 , wherein the wavelength converting layer further comprises a black matrix disposed between the red and green fluorescent (phosphor) materials. 
     
     
       10. The display device according to  claim 1 , wherein the wavelength converting layer further comprises a yellow fluorescent (phosphor) material constituting individual pixels. 
     
     
       11. The display device according to  claim 1 , further comprising thin film transistors comprising a source region, a drain region, and a gate electrode disposed between the source and drain regions and disposed between the substrate and the plurality of first electrodes. 
     
     
       12. The display device according to  claim 11 , further comprising an interlayer insulating layer disposed on the substrate to cover the thin film transistors. 
     
     
       13. The display device according to  claim 12 , wherein the plurality of first electrodes are electrically connected to the thin film transistors via through-hole electrodes penetrating the interlayer insulating layer.