Semiconductor device, fabrication process, and electronic device

Abstract

A semiconductor device is provided, including a semiconductor substrate that includes a semiconductor; an electrode layer formed above a first surface side inside the semiconductor substrate; a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a semiconductor substrate that includes a semiconductor; 
 an electrode layer formed above a first surface side inside the semiconductor substrate; 
 a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; 
 a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and 
 a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween. 
 
     
     
       2. The semiconductor device according to  claim 1 , further comprising a frame layer laminated on the first surface of the semiconductor substrate, wherein the frame layer is a sealant configured to bond a glass substrate to the first surface of the semiconductor substrate. 
     
     
       3. The semiconductor device according to  claim 2 , wherein the conductor layer fills an aperture portion in the sealant. 
     
     
       4. The semiconductor device according to  claim 3 , wherein the conductor layer includes silver or copper. 
     
     
       5. The semiconductor device according to  claim 3 , wherein the conductor layer is substantially the same thickness as the sealant. 
     
     
       6. The semiconductor device according to  claim 3 , wherein the conductor layer has a thickness of about 50 μm. 
     
     
       7. The semiconductor device according to  claim 1 , wherein the electrical connection between the electrode layer and the conductor layer is only at the end portion of the hole, the end portion being located within the conductor layer. 
     
     
       8. The semiconductor device according to  claim 7 , wherein the end portion located within the conductor layer is disposed above an uppermost surface of the electrode layer. 
     
     
       9. The semiconductor device according to  claim 1 , wherein the hole extends into a portion of the conductor layer. 
     
     
       10. The semiconductor device according to  claim 9 , wherein the hole perforates the electrode layer. 
     
     
       11. The semiconductor device according to  claim 9 , wherein the insulating layer is disposed around the wiring layer in the hole and extends into the portion of the conductor layer. 
     
     
       12. The semiconductor device according to  claim 11 , wherein the insulating layer extends above an uppermost surface of the electrode layer. 
     
     
       13. The semiconductor device according to  claim 1 , wherein the conductor layer is a material having a melting point greater than 1,410° C. 
     
     
       14. The semiconductor device according to  claim 1 , wherein the conductor layer is a material having a melting point less than or equal to about 1,410° C. 
     
     
       15. The semiconductor device according to  claim 1 , wherein the conductor layer is in the form of a paste material. 
     
     
       16. The semiconductor device according to  claim 1 , wherein the electrode layer includes aluminum, copper, tungsten, nickel, or tantalum, or a combination thereof. 
     
     
       17. A semiconductor device, comprising:
 a semiconductor substrate that includes a semiconductor;   an electrode layer formed above a first surface of the semiconductor substrate;   a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate;   a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and   a wiring layer that is electrically connected to the electrode layer via the conductor layer at a location above the first surface of the semiconductor substrate, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.   
     
     
       18. The semiconductor device according to claim 17, wherein the conductor layer is made of a material including nickel. 
     
     
       19. The semiconductor device according to claim 17, further comprising a frame layer laminated on the first surface of the semiconductor substrate, wherein the frame layer is a sealant to bond a glass substrate to the first surface of the semiconductor substrate. 
     
     
       20. The semiconductor device according to claim 17, wherein the conductor layer includes silver or copper. 
     
     
       21. The semiconductor device according to claim 17, wherein the hole extends into a portion of the conductor layer. 
     
     
       22. The semiconductor device according to claim 17, wherein the hole perforates the electrode layer. 
     
     
       23. The semiconductor device according to claim 17, wherein the insulating layer is disposed around the wiring layer in the hole. 
     
     
       24. The semiconductor device according to claim 17, wherein the insulating layer extends above an uppermost surface of the electrode layer. 
     
     
       25. The semiconductor device according to claim 17, wherein the electrode layer includes aluminum, copper, tungsten, nickel, or tantalum, or a combination thereof. 
     
     
       26. A semiconductor device, comprising:
 a semiconductor substrate that includes a semiconductor;   an electrode layer formed above a first surface of the semiconductor substrate;   a hole formed through the semiconductor substrate and the electrode layer; and   a wiring layer that is electrically connected to the electrode layer via a conductor layer at a location above the first surface of the semiconductor substrate, and formed through the semiconductor substrate and the electrode layer, the wiring layer being physically separated from the semiconductor substrate by an insulating layer disposed therebetween, wherein the conductor layer is formed above the electrode layer.   
     
     
       27. The semiconductor device according to claim 26, further comprising a frame layer laminated on the first surface of the semiconductor substrate, wherein the frame layer is a sealant to bond a glass substrate to the first surface of the semiconductor substrate. 
     
     
       28. The semiconductor device according to claim 26, wherein the insulating layer is disposed around the wiring layer in the hole. 
     
     
       29. The semiconductor device according to claim 26, wherein the insulating layer extends above an uppermost surface of the electrode layer. 
     
     
       30. The semiconductor device according to claim 26, wherein the electrode layer includes aluminum, copper, tungsten, nickel, or tantalum, or a combination thereof. 
     
     
       31. A semiconductor device, comprising:
 a semiconductor substrate that includes a semiconductor;   an electrode layer formed above a first surface of the semiconductor substrate;   a stopper layer formed above the electrode layer and above the first surface of the semiconductor substrate;   a wiring layer that extends from the stopper layer to a second surface of the semiconductor; and   a terminal arranged on a second surface of the semiconductor substrate to connect outside of the semiconductor device,   wherein the terminal is electrically connected to the electrode layer via the wiring layer, and   wherein the wiring layer is physically separated from the semiconductor substrate by an insulating layer disposed therebetween.   
     
     
       32. The semiconductor device according to claim 31, further comprising a frame layer laminated on the first surface of the semiconductor substrate, wherein the frame layer is a sealant to bond a glass substrate to the first surface of the semiconductor substrate. 
     
     
       33. The semiconductor device according to claim 32, wherein the stopper layer fills an aperture portion in the sealant. 
     
     
       34. The semiconductor device according to claim 32, wherein the stopper layer is substantially the same thickness as the sealant. 
     
     
       35. The semiconductor device according to claim 31, wherein the stopper layer has a thickness of about 50 μm. 
     
     
       36. The semiconductor device according to claim 31, wherein the insulating layer extends above an uppermost surface of the electrode layer. 
     
     
       37. The semiconductor device according to claim 31, wherein the electrode layer includes aluminum, copper, tungsten, nickel, or tantalum, or a combination thereof. 
     
     
       38. A method for fabricating a semiconductor device, the method comprising:
 forming an electrode layer on a first surface side of a semiconductor substrate;   forming a hole through the semiconductor substrate and the electrode layer from a second surface of the semiconductor substrate;   forming an insulating layer in the hole;   forming a wiring layer that is electrically connected to the electrode layer via a conductor layer, and that is physically separated from the semiconductor substrate by the insulating layer disposed therebetween, wherein the conductor layer is formed above the electrode layer; and   forming a terminal that is electrically connected to the electrode layer via the wiring layer.   
     
     
       39. The method for fabricating a semiconductor device according to claim 38, wherein the insulating layer is disposed around the wiring layer in the hole and extends into the portion of the conductor layer. 
     
     
       40. The method for fabricating a semiconductor device according to claim 38, wherein the electrode layer includes aluminum, copper, tungsten, nickel, or tantalum, or a combination thereof.