USRE47788EActiveUtility
Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element

Assignee: TOSHIBA KKPriority: Mar 11, 2010Filed: Jul 2, 2018Granted: Dec 31, 2019
Est. expiryMar 11, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Nobuaki Nakashima Takashi Sano
C23C 14/3414
PatentIndex Score
Cited by
References
Claims
Abstract

According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more.
Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A sputtering target made up of a titanium material of which purity is 99.99 mass % or more and an average crystal grain size is 15 μm or less,
 wherein the sputtering target has a surface to be sputtered, and 
 wherein, when X-ray diffraction of the surface is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface, 
 wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the sputtering target is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) , and 
 wherein a ghost grain does not exist in the sputtering target. 
 
     
     
       2. The sputtering target according to  claim 1 ,
 wherein a crystal orientation of the sputtering surface is a random orientation.   
     
     
       3. The sputtering target according to  claim 1 ,
 wherein a thickness of the sputtering target is 10 mm or more. 
 
     
     
       4. The sputtering target according to  claim 1 ,
 wherein a diameter of the sputtering target is 300 mm or more. 
 
     
     
       5. A target, comprising:
 a titanium component having a surface to be sputtered and having a thickness portion and a diameter portion perpendicular to the thickness portion,   wherein a uniform microcrystalline structure defines the titanium component,   wherein at least the thickness portion comprises crystal grains in a random orientation,   wherein, when X-ray diffraction of the surface of the titanium component to be sputtered is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface,   wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the titanium component is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) ,   wherein the titanium component lacks ghost grains, and   wherein an average crystal grain size of the titanium component is 15 μm or less.   
     
     
       6. The target of claim 5, wherein an average crystal grain size of the titanium component is 10 μm or less. 
     
     
       7. The target of claim 5, wherein an average crystal grain size of the titanium component is at least 7 μm and no more than 10 μm. 
     
     
       8. A target made up of a titanium material of which purity is 99.999 mass % or more,
 wherein the target has a surface to be sputtered, and   wherein, when X-ray diffraction of the surface is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface,   wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the target is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) ,   wherein a ghost grain does not exist in the target, and   wherein an average crystal grain size of the titanium material is 15 μm or less.   
     
     
       9. The target of claim 8, wherein a diameter of the target is 320-450 mm. 
     
     
       10. The target of claim 8, wherein a thickness of the target is 12-18 mm. 
     
     
       11. The target of claim 8, wherein a Vickers hardness of the titanium is Hv 90 to Hv 110. 
     
     
       12. The target of claim 11, wherein a dispersion of the Vickers hardness of the surface to be sputtered is 3% or less. 
     
     
       13. The sputtering target of claim 1, wherein a Vickers hardness of the titanium is Hv 90 to Hv 110. 
     
     
       14. The sputtering target of claim 13, wherein a dispersion of the Vickers hardness of the surface to be sputtered is 3% or less. 
     
     
       15. The sputtering target of claim 3, wherein a Vickers hardness of the titanium is Hv 90 to Hv 110. 
     
     
       16. The sputtering target of claim 15, wherein a dispersion of the Vickers hardness of the surface to be sputtered is 3% or less. 
     
     
       17. The sputtering target of claim 4, wherein a Vickers hardness of the titanium is Hv 90 to Hv 110. 
     
     
       18. The sputtering target of claim 17, wherein a dispersion of the Vickers hardness of the surface to be sputtered is 3% or less. 
     
     
       19. A target, comprising:
 a titanium component having a surface to be sputtered and having a thickness portion and a diameter portion perpendicular to the thickness portion,   wherein a uniform microcrystalline structure defines the titanium component,   wherein at least the thickness portion comprises crystal grains in a random orientation,   wherein, when X-ray diffraction of the surface of the titanium component to be sputtered is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface,   wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the titanium component is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) ,   wherein the titanium component lacks ghost grains, and   wherein a Vickers hardness of the titanium is Hv 90 to Hv 110.   
     
     
       20. The target according to claim 19, wherein a thickness of the target is 10 mm or more. 
     
     
       21. The target of claim 19, wherein a dispersion of the Vickers hardness of the surface of the titanium component to be sputtered is 3% or less. 
     
     
       22. A target, comprising:
 a titanium component having a surface to be sputtered and having a thickness portion and a diameter portion perpendicular to the thickness portion,   wherein a uniform microcrystalline structure defines the titanium component,   wherein at least the thickness portion comprises crystal grains in a random orientation,   wherein, when X-ray diffraction of the surface of the titanium component to be sputtered is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface,   wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the titanium component is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) ,   wherein the titanium component lacks ghost grains, and   wherein a diameter of the sputtering target is 300 mm or more.   
     
     
       23. The target according to claim 22, wherein a Vickers hardness of the titanium is Hv 90 to Hv 110. 
     
     
       24. The target of claim 23, wherein a dispersion of the Vickers hardness of the surface of the titanium component to be sputtered is 3% or less. 
     
     
       25. A target made up of a titanium material of which purity is 99.999 mass % or more,
 wherein the target has a surface to be sputtered, and   wherein, when X-ray diffraction of the surface is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface,   wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the target is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) ,   wherein a ghost grain does not exist in the target, and   wherein a Vickers hardness of the titanium is Hv 90 to Hv 110.   
     
     
       26. The target according to claim 25, wherein a thickness of the target is 10 mm or more. 
     
     
       27. The target of claim 25, wherein a dispersion of the Vickers hardness of the surface to be sputtered is 3% or less. 
     
     
       28. A target made up of a titanium material of which purity is 99.999 mass % or more,
 wherein the target has a surface to be sputtered, and   wherein, when X-ray diffraction of the surface is measured, a relative intensity I (100)  of a diffraction peak from a (100) plane, a relative intensity I (002)  of a diffraction peak from a (002) plane, and a relative intensity I (101)  of a diffraction peak from a (101) plane satisfy a condition of I (101) &gt;I (002) &gt;I (100)  at the surface,   wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the target is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101)  satisfy a condition of I (101) &gt;I (002) &gt;I (100) ,   wherein a ghost grain does not exist in the target, and   wherein a diameter of the sputtering target is 300 mm or more.   
     
     
       29. The target of claim 28, wherein a Vickers hardness of the titanium is Hv 90 to Hv 110. 
     
     
       30. The target of claim 29, wherein a dispersion of the Vickers hardness of the surface of the titanium component to be sputtered is 3% or less.
Cited by (0)

No later patents cite this yet.
References (0)

No backward citations on record.