Method for manufacturing light emitting device, and light emitting device

Abstract

A method for manufacturing a light-emitting device, comprising: forming, over a substrate, a plurality of multilayered light-emitting structures each including a first electrode, a light-emitting layer, and a second electrode; forming, in the substrate, a plurality of grooves that surround the multilayered light-emitting structures individually; forming, over the substrate, a sealing film that covers the multilayered light-emitting structures and the grooves; and separating the multilayered light-emitting structures from one another after forming the sealing film, by cutting the substrate such that, in each groove, part of the sealing film covering a given inner side surface of the groove remains, the given inner side surface being adjacent to any of the multilayered light-emitting structures.

The invention claimed is: 
     
       1. A light-emitting device, comprising:
 a substrate having a top surface, a bottom surface, and an outer side surface; 
 a multilayered light-emitting structure disposed over the top surface of the substrate, and including a first electrode, a light-emitting layer, and a second electrode; and 
 a sealing film covering the multilayered light-emitting structure, wherein the substrate includes a gas barrier layer that opposes the sealing film via the multilayered light-emitting structure, and 
 the outer side surface of the substrate includes a first region extending from the top surface of the substrate to the gas barrier layer, and a second region extending from the gas barrier layer to the bottom surface of the substrate, the first region being covered by the sealing film, and a part of the second region is covered by the sealing film while another part of the second region is not covered by the sealing film, 
 wherein the gas barrier material is an electrical insulator, and 
 wherein the substrate further comprises: 
 a thin film transistor layer disposed above the gas barrier layer; and 
 a resin film layer disposed below the gas barrier layer. 
 
     
     
       2. The light-emitting device of  claim 1 , wherein the substrate further comprises:
 a thin film transistor layer disposed above the gas barrier layer; and   a resin film layer disposed below the gas barrier layer.   
     
     
       3. The light-emitting device of claim  2  1, wherein a portion of the resin film layer extends outwards from the outer side surface to be longer than at least one of the thin film transistor layer and the gas barrier layer in a direction of the extension. 
     
     
       4. The light-emitting device of claim  2  1, wherein the first electrode and the second electrode contact the thin film transistor layer. 
     
     
       5. The light-emitting device of claim  2  1, wherein the thin film transistor layer is a flat structure without protrusions or recesses. 
     
     
       6. A light-emitting device, comprising:
 a substrate having a first surface;   a multilayered structure including a first electrode, a light-emitting layer, and a second electrode, the multilayered structure having a second surface facing the first surface of the substrate, and a third surface opposite to the second surface;   a first sealing film disposed over the third surface of the multilayered structure and extending around the multilayered structure, the first sealing film containing primarily a first inorganic material; and   a second sealing film disposed between the first sealing film and the third surface of the multilayered structure and extending around the multilayered structure, the second sealing film containing primarily a second inorganic material, wherein   the second sealing film includes a first portion overlaying the third surface of the multilayered structure and a second portion extending from the first portion,   the first portion of the second sealing film is separated from the first sealing film with a first resin layer interposed therebetween, and   the second portion of the second sealing film is disposed adjacent to the first sealing film without the first resin layer interposed therebetween,   wherein the substrate includes a thin film transistor layer disposed above a gas barrier layer, and a resin film layer disposed below the gas barrier layer, and   wherein the gas barrier layer is an electrical insulator.   
     
     
       7. The light-emitting device of claim 6, wherein the substrate includes a gas barrier layer, the gas barrier layer contains primarily a third inorganic material. 
     
     
       8. The light-emitting device of claim 7, wherein an end portion of the second sealing film is located closer to the multilayered structure than an end portion of the first sealing film. 
     
     
       9. The light-emitting device of claim 8, wherein
 a portion of the first sealing film is disposed adjacent to the gas barrier layer without the first resin layer, the second sealing film, and the multilayered structure interposed therebetween, and   the end portion of the second sealing film is located closer to the multilayered structure than the portion of the first sealing film.   
     
     
       10. The light-emitting device of claim 9, wherein the second inorganic material and the third inorganic material is silicon nitride, and the first inorganic material is silicon nitride or aluminum oxide. 
     
     
       11. The light-emitting device of claim 6, wherein a thin film transistor layer disposed between the first surface of the substrate and the second surface of the multilayered structure. 
     
     
       12. The light-emitting device of claim 11, wherein
 the thin film transistor layer extends around the multilayered structure, and   the first sealing film and second sealing film are disposed adjacent to the thin film transistor layer without the multilayered structure interposed therebetween.   
     
     
       13. The light-emitting device of claim 6, wherein an electrode of a touch panel sensor is disposed over the first sealing film with a second resin layer interposed therebetween.