Image sensor having shielding structure

Abstract

An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

What is claimed is: 
     
       1. An image sensor comprising:
 a substrate comprising a pixel array, a through via area, and a shield area disposed between the pixel array and the through via area; 
 a first interlayer insulating layer formed on a first surface of the substrate; 
 a pixel line disposed on the first interlayer insulating layer in the pixel array; 
 a through via line disposed on the first interlayer insulating layer in the through via area; 
 a second interlayer insulating layer disposed on the first interlayer insulating layer, the second interlayer insulating layer covering the pixel line and the through via line; 
 a through via structure configured to pass through the substrate in the through via area; and 
 a shielding structure passing through the substrate in the shield area, 
 wherein the through via structure includes:
 a through via structure passing through the substrate and the first interlayer insulating layer; and 
 a via isolation structure passing through the substrate and surrounding the via structure, and 
 
 wherein the shielding structure passes through the substrate and electrically insulates between the pixel array and the through via area of the substrate. 
 
     
     
       2. The image sensor of  claim 1 ,
 wherein the via isolation structure comprises:
 a via isolation trench passing through the substrate; and 
 a via isolation insulating material filling the via isolation trench, 
 
 wherein the shielding structure comprises:
 a shield trench vertically passing through the substrate; and 
 a shield insulating material filling the shield trench, and 
 
 wherein the via isolation trench has a same depth as the shield trench. 
 
     
     
       3. The image sensor of  claim 2 ,
 wherein the through via structure comprises:
 a through via passing through the substrate and the first insulating layer; and 
 a through via plug filling the through via, 
 
 wherein the shielding structure comprises:
 a shield core trench passing through the shield insulating material and the first interlayer insulating layer; and 
 a shield core filling the shield core trench, and 
 
 wherein the through via has a same depth as the shield core trench. 
 
     
     
       4. The image sensor of  claim 3 , further comprising a shield line disposed on the first interlayer insulating layer in the shield area,
 wherein the shield line is electrically connected to the shield core, and the through via line is electrically connected to the through via plug. 
 
     
     
       5. The image sensor of  claim 4 , wherein the shield line is electrically connected to the through via line. 
     
     
       6. The image sensor of  claim 3 , wherein the through via structure comprises a through via pad disposed on a second surface of the substrate, and
 wherein the through via pad is electrically connected to the through via plug. 
 
     
     
       7. An image sensor comprising:
 a substrate comprising a first area and a second area; 
 a first interlayer insulating layer formed on a first surface of the substrate; 
 a first metal line disposed on the first interlayer insulating layer in the first area, and a second metal line disposed on the first interlayer insulating layer in the second area; 
 a second interlayer insulating layer disposed on the first interlayer insulating layer, and covering the first and second metal lines; and 
 a through via structure disposed in the first area and a shielding structure disposed in the second area, 
 wherein the through via structure comprises a through via plug passing through the substrate and the first interlayer insulating layer in the first area, and electrically connected to the first metal line, and 
 wherein the shielding structure comprises a shield insulating material passing through the substrate in the second area, and contact the first interlayer insulating layer. 
 
     
     
       8. The image sensor of  claim 7 ,
 wherein the through via structure further comprises a via isolation insulating material passing through the substrate and surrounding the through via plug, and 
 wherein the via isolation insulating material has the same height as the shield insulating material. 
 
     
     
       9. The image sensor of  claim 7 ,
 wherein the shielding structure further comprises a shield core passing through the shield insulating material and the first interlayer insulating layer, and electrically connected to the second metal line, and 
 wherein the shield core has the same height as the through via plug. 
 
     
     
       10. The image sensor of  claim 9 , further comprising a through via pad disposed on a second surface of the substrate, and electrically connected to the through via plug, and
 wherein the first metal line is electrically connected to the second metal line. 
 
     
     
       11. The image sensor of  claim 10 , further comprising a shield pad disposed on the second surface of the substrate, and electrically connected to the shield core. 
     
     
       12. An image sensor having a first area, a second area and a third area, the image sensor comprising:
 a substrate disposed in the first area, the second area and the third area;   a first interlayer insulating layer disposed on a first surface of the substrate;   a first metal line disposed on the first interlayer insulating layer and disposed in the first area;   a second metal line disposed on the first interlayer insulating layer and disposed in the second area;   a second interlayer insulating layer disposed on the first interlayer insulating layer and covering the first metal line and the second metal line;   a through via structure disposed in the first area; and   a first shielding structure disposed in the second area,   wherein the through via structure includes a through via plug passing through the substrate and the first interlayer insulating layer, the through via plug being electrically connected to the first metal line, and   wherein the first shielding structure comprises a shield insulating material, passes through the substrate in the second area, and contacts the first interlayer insulating layer.    
     
     
       13. The image sensor of claim 12, wherein the first area and the second area are included in a peripheral circuit area, and
 the third area is included in a pixel area.    
     
     
       14. The image sensor of claim 12, wherein no shielding structure surrounds the third area.  
     
     
       15. The image sensor of claim 12, further comprising a second shielding structure surrounding the third area.  
     
     
       16. The image sensor of claim 12, further comprising a third shielding structure surrounding the first area.  
     
     
       17. The image sensor of claim 12, wherein the first shielding structure is disposed in an interface area of the image sensor.  
     
     
       18. An image sensor having a first area, a second area and a third area, the image sensor comprising:
 a substrate disposed in the first area, the second area and the third area;   a first interlayer insulating layer disposed on a first surface of the substrate;   a first metal line disposed on the first interlayer insulating layer and disposed in the first area;   a second metal line disposed on the first interlayer insulating layer and disposed in the second area;   a second interlayer insulating layer disposed on the first interlayer insulating layer and covering the first metal line and the second metal line;   a through via structure disposed in the first area; and   a first shielding structure disposed in the second area,   wherein the first shielding structure comprises a shield insulating material passing through the substrate in the second area, and contact the first interlayer insulating layer, and   wherein the through via structure comprises a through via plug passing through the substrate and the first interlayer insulating layer in the first area, and electrically connected to the first metal line.    
     
     
       19. The image sensor of claim 18, wherein the first area and the second area are included in a peripheral circuit area, and
 the third area is included in a pixel area.    
     
     
       20. The image sensor of claim 18, wherein no shielding structure surrounds the third area.  
     
     
       21. The image sensor of claim 18, further comprising a second shielding structure surrounding the third area.  
     
     
       22. The image sensor of claim 18, further comprising a third shielding structure surrounding the first area.  
     
     
       23. The image sensor of claim 18, wherein the first shielding structure is disposed in an interface area of the image sensor.