Laser diode array, method of manufacturing the same, printer, and optical communication device

Abstract

A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

What is claimed is: 
     
       1. A laser diode array comprising:
 a support substrate including a support base, a first insulating layer, an adhesive layer, and a metal layer;   a plurality of vertical resonator structures of columnar shape jointed to a surface of the metal layer, where each vertical resonator structure includes a first contact layer jointed to the metal layer, a first DBR layer, a first spacer layer, an active layer, a second spacer layer, a second DBR layer, and a second contact layer sequentially from the metal layer side; and   an aperture formed in a second insulating layer configured to expose a portion of the metal layer.   
     
     
       2. The laser diode array according to  claim 1 , wherein the respective vertical resonator structures are obtained by removing a second substrate from a structure formed by crystal growth on the second substrate. 
     
     
       3. The laser diode array according to  claim 1 , wherein the vertical resonator structure is made of a material different from a material of the support substrate. 
     
     
       4. The laser diode array according to  claim 1 , wherein in the support substrate, one or a plurality of connection parts that penetrate a portion other than the metal layer in the support substrate are formed to be in contact with the metal layer. 
     
     
       5. A printer using the laser diode array of  claim 1  as a light source. 
     
     
       6. An optical communication device using the laser diode array of  claim 1  as a light source. 
     
     
       7. The laser diode array according to  claim 1 , wherein a current confinement layer is between the second spacer layer and the second DBR layer. 
     
     
       8. The laser diode array according to  claim 1 , wherein the current: confinement layer comprises a current confinement region that is in a peripheral region of a current injection region. 
     
     
       9. A laser diode array comprising:
 a support substrate that comprises:
 a support base, 
 a first insulating layer, 
 an adhesive layer, and 
 a metal layer; 
   a columnar-shaped vertical resonator structure on a surface of the metal layer, the columnar-shaped vertical resonator structure comprises:
 a first contact layer in contact with the surface of the metal layer, 
 a first DBR layer between the first contact layer and a first spacer layer, 
 an active layer between the first spacer layer and a second spacer layer, and 
 a second DBR layer between the second spacer layer and a second contact layer; and 
   an aperture in a second insulating layer, the aperture is configured to expose a portion of the metal layer.   
     
     
       10. The laser diode array according to claim 9, wherein the support base comprises silicon. 
     
     
       11. The laser diode array according to claim 9, wherein a hole in the support substrate penetrates the support base, the first insulating layer, and an adhesive layer. 
     
     
       12. The laser diode array according to claim 11, that further comprises:
 a connection part that is in the hole and in contact with the metal layer.   
     
     
       13. The laser diode array according to claim 9, wherein the columnar-shaped vertical resonator structure that further comprises:
 a current confinement layer between the second spacer layer and the second DBR layer.   
     
     
       14. The laser diode array according to claim 13, wherein a current confinement region of the current confinement layer is in a peripheral region of a current injection region. 
     
     
       15. The laser diode array according to claim 9, wherein the columnar-shaped vertical resonator structure that further comprises:
 a metal electrode wired directly to an electrode pad.