Method for manufacturing light emitting device, and light emitting device

Abstract

A method for manufacturing a light-emitting device, comprising: forming, over a substrate, a plurality of multilayered light-emitting structures each including a first electrode, a light-emitting layer, and a second electrode; forming, in the substrate, a plurality of grooves that surround the multilayered light-emitting structures individually; forming, over the substrate, a sealing film that covers the multilayered light-emitting structures and the grooves; and separating the multilayered light-emitting structures from one another after forming the sealing film, by cutting the substrate such that, in each groove, part of the sealing film covering a given inner side surface of the groove remains, the given inner side surface being adjacent to any of the multilayered light-emitting structures.

The invention claimed is: 
     
       1. A light-emitting device, comprising:
 a substrate having a top surface, a bottom surface, and an outer side surface;   a multilayered light-emitting structure disposed over the top surface of the substrate, and including a first electrode, a light-emitting layer, and a second electrode; and   a sealing film covering the multilayered light-emitting structure, wherein the substrate includes a gas barrier layer that opposes the sealing film via the multilayered light-emitting structure, and   the outer side surface of the substrate includes a first region extending from the top surface of the substrate to the gas barrier layer, and a second region extending from the gas barrier layer to the bottom surface of the substrate, the first region being covered by the sealing film, and a part of the second region is covered by the sealing film while another part of the second region is not covered by the sealing film,   wherein the gas barrier material is an electrical insulator.   
     
     
       2. The light-emitting device of  claim 1 , wherein the substrate further comprises:
 a thin film transistor layer disposed above the gas barrier layer; and   a resin film layer disposed below the gas barrier layer.   
     
     
       3. The light-emitting device of  claim 2 , wherein a portion of the resin film layer extends outwards from the outer side surface to be longer than at least one of the thin film transistor layer and the gas barrier layer in a direction of the extension. 
     
     
       4. The light-emitting device of  claim 2 , wherein the first electrode and the second electrode contact the thin film transistor layer. 
     
     
       5. The light-emitting device of  claim 2 , wherein the thin film transistor layer is a flat structure without protrusions or recesses. 
     
     
       6. A light-emitting device, comprising:
 a substrate having a top surface, a bottom surface, and an outer side surface;   a multilayered light-emitting structure disposed over the top surface of the substrate, and including a first electrode, a light-emitting layer, and a second electrode; and   a sealing film covering the multilayered light-emitting structure,   wherein the substrate includes:
 a gas barrier layer; 
 a thin film transistor layer disposed above the gas barrier layer: and 
 a base layer disposed below the gas barrier layer, 
   a first part of the outer side surface of the substrate, which includes the thin film transistor layer and at least a part of the gas barrier layer, is covered by the sealing film, and a second part of the outer side surface of the substrate, which includes at least a part of the base layer, is not covered by the sealing film, and   the gas barrier layer is an electrical insulator.   
     
     
       7. The light-emitting device according to claim 6,
 wherein the sealing film directly contacts the part of the gas barrier layer.   
     
     
       8. The light-emitting device according to claim 6,
 wherein the base layer is made of resin.   
     
     
       9. The light-emitting device according to claim 6,
 wherein a third part of the outer side surface of the substrate, which includes another part of the base layer, is covered by the sealing film.