Manufacturing method of substrate for display device and manufacturing method of display device

Abstract

A substrate for a display device, includes: an insulation substrate; an insulation film, which is formed on the insulation substrate and is primarily made of one of silicon oxide and oxidized metal; an inorganic film, which is formed to be in direct contact with the insulation film and has an insulator part that is formed by changing oxide semiconductor into insulator; and a wiring film, which is formed to be in direct contact with the insulator part.

What is claimed is: 
     
       1. A method of manufacturing a substrate for a display device, comprising:
 forming, on an insulation substrate, an insulation film, which is primarily made of one of silicon oxide and oxidized metal; 
 forming an inorganic film, which has an insulator part that is formed by changing an oxide semiconductor into an insulator, to be in direct contact with the insulation film; and 
 forming a wiring film to be in direct contact with the insulator part, wherein 
 the insulator has a specific resistance of 1×10 6 Ω·cm or more, 
 the forming the inorganic film is performed after the forming the wiring film, and 
 the forming the insulation film is performed after the forming the inorganic film. 
 
     
     
       2. The method of manufacturing the substrate for the display device according to  claim 1 ,
 wherein, in the forming the insulation film, the insulation film is formed in a manner where the insulation film contains, in a planar view, the wiring film in a transversal direction of the wiring film. 
 
     
     
       3. The method of manufacturing the substrate for the display device according to  claim 1 ,
 wherein forming the inorganic film includes: 
 forming a film of the oxide semiconductor; and 
 forming the insulator part by changing the film of the oxide semiconductor into the insulator after the forming the film of the oxide semiconductor. 
 
     
     
       4. The method of manufacturing the substrate for the display device according to  claim 3 ,
 wherein, in the forming the insulator part, the insulator part is formed by changing only a part of the film of the oxide semiconductor into the insulator. 
 
     
     
       5. A method of manufacturing a substrate for a display device, comprising:
 forming, on an insulation substrate, an inorganic film, which has an insulator part that is 
 formed by changing an oxide semiconductor into an insulator, such that the insulator part is in direct contact with the insulation substrate; 
 forming a wiring film to be in direct contact with the insulator part; and 
 forming an insulation film, which is primarily made of one of silicon oxide and oxidized metal, to be in direct contact with the wiring film, wherein 
 the insulator has a specific resistance of 1×10 6  Ω·cm or more. 
 
     
     
       6. The method of manufacturing the substrate for the display device according to  claim 5 ,
 wherein the forming the wiring film is performed after the forming the inorganic film, and 
 wherein the forming the insulation film is performed after the forming the wiring film. 
 
     
     
       7. The method of manufacturing the substrate for the display device according to  claim 5 ,
 wherein forming the inorganic film includes: 
 forming a film of the oxide semiconductor; and 
 forming the insulator part by changing the film of the oxide semiconductor into the insulator after the forming the film of the oxide semiconductor. 
 
     
     
       8. The method of manufacturing the substrate for the display device according to  claim 7 ,
 wherein, in the forming the insulator part, the insulator part is formed by changing only a part of the film of the oxide semiconductor into the insulator. 
 
     
     
       9. A method of manufacturing a substrate for a display device, comprising:
 forming, on an insulation substrate, an insulation film, which is primarily made of one of silicon oxide and oxidized metal; 
 forming an inorganic film, which has an insulator part that is formed by changing an oxide semiconductor into an insulator, to be in direct contact with the insulation film; and 
 forming a wiring film to be in direct contact with the insulator part, 
 wherein the forming the wiring film includes: 
 forming the wiring film having a first wiring film and a second wiring film being not in direct contact with the first wiring film, and 
 forming a conductor part by changing the oxide semiconductor into a conductor, which is formed to be in direct contact with the first wiring film and the second wiring film. 
 
     
     
       10. The method of manufacturing the substrate for the display device according to  claim 9 ,
 wherein, in the forming the conductor part, the conductor part is formed by irradiating with ultraviolet rays on the insulation film and the inorganic film. 
 
     
     
       11. The method of manufacturing the substrate for the display device according to  claim 10 ,
 wherein, in the forming the conductor part, the ultraviolet rays are irradiated in a direction toward the insulation substrate from the inorganic film. 
 
     
     
       12. The method of manufacturing the substrate for the display device according to  claim 10 ,
 wherein the substrate is made of a material, which transmits the ultraviolet rays, and 
 wherein, in the forming the conductor part, the ultraviolet rays are irradiated in a direction toward the inorganic film from the insulation substrate. 
 
     
     
       13. The method of manufacturing the substrate for the display device according to  claim 10 ,
 wherein the ultraviolet rays are irradiated by at least one of an ultraviolet lamp, an ultraviolet LED or an ultraviolet laser. 
 
     
     
       14. The method of the substrate for the display device according to  claim 10 ,
 wherein the oxide semiconductor is one of InGaZnO-based, InZnO-based, InGaO-based, InSnO-based, InSnZnO-based, InGaZnSnO-based, InAlZnO-based, InHfZnO-based, InZrZnO-based, InMgZnO-based and InYZnO-based oxide semiconductor. 
 
     
     
       15. A method of manufacturing a display device comprising:
 the method of manufacturing the substrate according to  claim 10 . 
 
     
     
       16. A method of manufacturing a substrate for a display device, comprising:
 forming, on an insulation substrate, an inorganic film, which has an insulator part that is formed by changing an oxide semiconductor into an insulator; 
 forming a wiring film to be in direct contact with the insulator part; and 
 forming an insulation film, which is primarily made of one of silicon oxide and oxidized metal, to be in direct contact with the wiring film, wherein 
 the insulator has a specific resistance of 1×10 6  Ω·cm or more, 
 the forming the wiring film is performed after the forming the insulation film, and 
 the forming the inorganic film is performed after the forming the wiring film. 
 
     
     
       17. The method of manufacturing the substrate for the display device according to  claim 16 ,
 wherein forming the inorganic film includes: 
 forming a film of the oxide semiconductor; and 
 forming the insulator part by changing the film of the oxide semiconductor into the insulator after the forming the film of the oxide semiconductor. 
 
     
     
       18. The method of manufacturing the substrate for the display device according to  claim 17 ,
 wherein, in the forming the insulator part, the insulator part is formed by changing only a part of the film of the oxide semiconductor into the insulator. 
 
     
     
       19. A display device, comprising:
 an insulation substrate;   an insulation film, which comprises silicon;   an inorganic film, which comprises an oxide semiconductor, in direct contact with the insulation film;   an insulator part of the inorganic film, which comprises elements of the oxide semiconductor; and   a wiring film overlapping the insulator part in plan view,   wherein the insulator part has a specific resistance of 1×10 6  Ω·cm or more, and   wherein the inorganic film is above the wiring film, and the insulation film is above and at least partially overlapping the inorganic film in plan view.    
     
     
       20. The method of manufacturing a substrate for a display device according to claim 5, wherein
 the insulation film is in direct contact with the wiring film.    
     
     
       21. The display device according to claim 19, wherein the wiring film is in direct contact with the insulator part.  
     
     
       22. The display device according to claim 19, wherein the inorganic film is in direct contact with the wiring film.  
     
     
       23. The display device according to claim 19, wherein the inorganic film is an oxide semiconductor formed of one of InZnO-based, InGaO-based, InSnO-based, InSnZnO-based, InGaZnSnO-based, or InAlZnO-based.  
     
     
       24. The display device according to claim 19, wherein the inorganic film is an oxide semiconductor formed of one of InHf (hafnium) ZnO-based, InZr (zirconium) ZnO-based, InMg (magnesium) ZnO-based, or InY (yttrium) ZnO-based oxide.  
     
     
       25. The display device according to claim 19, wherein the inorganic film is an oxide film containing In—Ga—Zn—O.  
     
     
       26. The display device according to claim 25, wherein the semiconductor part of the inorganic film has a specific resistance of more than 1×10 −2  Ω cm and less than 1×10 6  Ω cm.  
     
     
       27. The display device according to claim 25 wherein the semiconductor part of the inorganic film has a specific resistance of more than 1×10 −2  Ω cm and less than 1×10 5  Ω cm.  
     
     
       28. The display device according to claim 25, wherein the inorganic film has a thickness of 5 nm to 1 micron.  
     
     
       29. The display device according to claim 25, wherein the inorganic film has a thickness of 10 nm to 500 nm.  
     
     
       30. The display device according to claim 25, wherein the insulation film has a thickness of 1 nm to 1 micron.  
     
     
       31. The display device according to claim 25, wherein the insulation film has a thickness of 10 nm to 500 nm.  
     
     
       32. The display device according to claim 25, wherein the wiring film has a thickness of 50 nm to 1 micron.  
     
     
       33. The display device according to claim 25, wherein the wiring film has a thickness of 100 nm to 500 nm.  
     
     
       34. The display device according to claim 25, wherein the wiring film comprises aluminum.  
     
     
       35. The display device according to claim 25, wherein the wiring film comprises copper.  
     
     
       36. The display device according to claim 25, wherein the wiring film is comprised primarily of a metal of one of chrome (Cr), aluminum, molybdenum, or copper.  
     
     
       37. The display device according to claim 19, wherein the insulation film has a thickness of 1 nm to 1 micron.  
     
     
       38. The display device according to claim 19, wherein the insulation film has a thickness of 10 nm to 500 nm.  
     
     
       39. The display device according to claim 19, wherein the wiring film has a thickness of 50 nm to 1 micron.  
     
     
       40. The display device according to claim 19, wherein the wiring film has a thickness of 100 nm to 500 nm.  
     
     
       41. The display device according to claim 19, wherein the wiring film comprises aluminum.  
     
     
       42. The display device according to claim 19, wherein the wiring film comprises copper.  
     
     
       43. The display device according to claim 19, wherein the wiring film is comprised primarily of a metal of one of chrome (Cr), aluminum, molybdenum, or copper.  
     
     
       44. A display device, comprising:
 an insulation substrate;   an insulation film, which comprises silicon;   an inorganic film, which comprises an oxide semiconductor part and a conductor part, in direct contact with the insulation film; and   a wiring film in direct contact with the conductor part,   wherein the inorganic film is above the wiring film, the insulation film is above and at least partially overlapping the inorganic film in plan view, and an insulator part of the inorganic film is in direct contact with the insulation film.    
     
     
       45. The display device according to claim 44, wherein the inorganic film is in direct contact with the wiring film.  
     
     
       46. The display device according to claim 44, wherein the direct contact is overlapping in plan view.  
     
     
       47. The display device according to claim 44 wherein an insulator part of the inorganic film is in direct contact with the conductor part of the inorganic film.  
     
     
       48. The display device according to claim 47, wherein the direct contact is an edge contact.  
     
     
       49. The display device according to claim 44, wherein the wiring film includes a first wiring film and a second wiring film that is not in direct contact with the first wiring film.  
     
     
       50. The display device according to claim 44, wherein the inorganic film is an oxide semiconductor formed of one of InZnO-based, InGaO-based, InSnO-based, InSnZnO-based, InGaZnSnO-based, or InAlZnO-based.  
     
     
       51. The display device according to claim 44, wherein the inorganic film is an oxide semiconductor formed of one of InHf (hafnium) ZnO-based, InZr (zirconium) ZnO-based, InMg (magnesium) ZnO-based, or InY (yttrium) ZnO-based oxide.  
     
     
       52. The display device according to claim 44, wherein the inorganic film is an oxide film containing In—Ga—Zn—O.  
     
     
       53. The display device according to claim 52, wherein the semiconductor part of the inorganic film has a specific resistance of more than 1×10 −2  Ω cm and less than 1×10 6  Ω cm.  
     
     
       54. The display device according to claim 52, wherein the semiconductor part of the inorganic film has a specific resistance of more than 1×10 −2  Ω cm and less than 1×10 5  Ω cm.  
     
     
       55. The display device according to claim 52, wherein the conductor part of the inorganic film has a specific resistance of 1×10 −3  Ω cm or less.  
     
     
       56. The display device according to claim 52, wherein the inorganic film has a thickness of 5 nm to 1 micron.  
     
     
       57. The display device according to claim 52, wherein the inorganic film has a thickness of 10 nm to 500 nm.  
     
     
       58. The display device according to claim 52, wherein the insulation film has a thickness of 1 nm to 1 micron.  
     
     
       59. The display device according to claim 52, wherein the insulation film has a thickness of 10 nm to 500 nm.  
     
     
       60. The display device according to claim 52, wherein the wiring film has a thickness of 50 nm to 1 micron.  
     
     
       61. The display device according to claim 52, wherein the wiring film has a thickness of 100 nm to 500 nm.  
     
     
       62. The display device according to claim 52, wherein the wiring film comprises aluminum.  
     
     
       63. The display device according to claim 52, wherein the wiring film comprises copper.  
     
     
       64. The display device according to claim 52, wherein the wiring film is comprised primarily of a metal of one of chrome (Cr), aluminum, molybdenum, or copper.  
     
     
       65. The display device according to claim 44, wherein the insulation film has a thickness of 1 nm to 1 micron.  
     
     
       66. The display device according to claim 44, wherein the insulation film has a thickness of 10 nm to 500 nm.  
     
     
       67. The display device according to claim 44, wherein the wiring film has a thickness of 50 nm to 1 micron.  
     
     
       68. The display device according to claim 44, wherein the wiring film has a thickness of 100 nm to 500 nm.  
     
     
       69. The display device according to claim 44, wherein the wiring film comprises aluminum.  
     
     
       70. The display device according to claim 44, wherein the wiring film comprises copper.  
     
     
       71. The display device according to claim 44, wherein the wiring film is comprised primarily of a metal of one of chrome (Cr), aluminum, molybdenum, or copper.  
     
     
       72. A display device, comprising:
 an insulation substrate;   an insulation film, which is primarily made of one of silicon oxide and oxidized metal;   an inorganic film, which comprises an oxide semiconductor, in direct contact with the insulation film;   an insulator part of the inorganic film, which comprises elements of the oxide semiconductor;   a conductor part of the inorganic film, which comprises elements of the oxide semiconductor; and   a wiring film including a first wiring film and a second wiring film being not in direct contact with the first wiring film, the conductor part being in direct contact with the first wiring film and the second wiring film.    
     
     
       73. The display device according to claim 72, wherein the insulator part of the inorganic film is in direct contact with the conductor part of the inorganic film.  
     
     
       74. The display device according to claim 73, wherein the direct contact is an edge contact.  
     
     
       75. The display device according to claim 72, wherein the conductor part of the inorganic film has a specific resistance of 1×10 −3  Ω cm or less.  
     
     
       76. The display device according to claim 72, wherein the inorganic film has a thickness of 5 nm to 1 micron.  
     
     
       77. The display device according to claim 72, wherein the inorganic film has a thickness of 10 nm to 500 nm.  
     
     
       78. The display device according to claim 72, wherein the insulation film has a thickness of 1 nm to 1 micron.  
     
     
       79. The display device according to claim 72, wherein the insulation film has a thickness of 10 nm to 500 nm.  
     
     
       80. The display device according to claim 72, wherein the wiring film has a thickness of 50 nm to 1 micron.  
     
     
       81. The display device according to claim 72, wherein the wiring film has a thickness of 100 nm to 500 nm.  
     
     
       82. The display device according to claim 72, wherein the wiring film comprises aluminum.  
     
     
       83. The display device according to claim 72, wherein the wiring film comprises copper.  
     
     
       84. The display device according to claim 72, wherein the inorganic film is an oxide film comprising In—Ga—Zn—O.  
     
     
       85. The display device according to claim 84, wherein the conductor part of the inorganic film has a specific resistance of 1×10 −3  Ω cm or less.  
     
     
       86. The display device according to claim 84, wherein the inorganic film has a thickness of 5 nm to 1 micron.  
     
     
       87. The display device according to claim 84, wherein the inorganic film has a thickness of 10 nm to 500 nm.  
     
     
       88. The display device according to claim 84, wherein the insulation film has a thickness of 1 nm to 1 micron.  
     
     
       89. The display device according to claim 84, wherein the insulation film has a thickness of 10 nm to 500 nm.  
     
     
       90. The display device according to claim 84, wherein the wiring film has a thickness of 50 nm to 1 micron.  
     
     
       91. The display device according to claim 84, wherein the wiring film has a thickness of 100 nm to 500 nm.  
     
     
       92. The display device according to claim 84, wherein the wiring film comprises aluminum.  
     
     
       93. The display device according to claim 84, wherein the wiring film comprises copper.  
     
     
       94. The display device according to claim 84, wherein the insulator part of the inorganic film is in direct contact with the conductor part of the inorganic film.  
     
     
       95. The display device according to claim 94, wherein the direct contact is an edge contact.