Electro-optical device and electronic apparatus

Abstract

An electro-optical device includes a first light shielding film; a transistor element formed on the first light shielding film to overlap the first light shielding film; a second light shielding film formed on the transistor element to overlap the transistor element and electrically connected to an input terminal of the transistor element; a transparent conductive film extended toward an upper layer side of the second light shielding film in an opening region, through which light penetrates, of the display region; a dielectric film formed on the transparent conductive film in the opening region; and a transparent pixel electrode formed on the dielectric film in the opening region, constituting a storage capacitor together with the transparent conductive film and the dielectric film, and having a transparent pixel electrode which is electrically connected to the transistor element.

What is claimed is: 
     
       1. An electro-optical device comprising:
 a substrate; 
 a scanning line disposed above the substrate, the scanning line extends along a first direction; 
 a semiconductor layer disposed above the scanning line, the semiconductor layer overlapped with the scanning line; 
 a data line disposed above the semiconductor layer, the data line is electrically connected to the semiconductor layer, the data line extends along a second direction that intersects the first direction; 
 a capacitor electrode disposed above and overlapped with the data line, the capacitor electrode has an aperture portion; 
 a pixel electrode disposed above the capacitor electrode; and 
 a dielectric film disposed between the capacitor electrode and the pixel electrode, the dielectric film constitutes a storage capacitor together with the capacitor electrode and the pixel electrode, 
 wherein each of the scanning line and the data line are made of a light shielding material, 
 each of the capacitor electrode, the dielectric film, and the pixel electrode are made of a light transmitting material, 
 the capacitor electrode is overlapped with the pixel electrode in an opening region through which light penetrates, 
 and 
 athe semiconductor layer is electrically connected to the pixel electrode via a contact hole disposed in the aperture portion of the capacitor electrode. 
 
     
     
       2. The electro-optical device according to  claim 1 ,
 wherein the contact hole is disposed so as not to overlap with the scanning line. 
 
     
     
       3. An electronic apparatus comprising the electro-optical device according to  claim 1 . 
     
     
       4. An electro-optical device comprising:
 a scanning line disposed in a non-opening region through which light does not penetrate, the scanning line extends along a first direction; 
 a data line disposed in the non-opening region, the data line extends along a second direction that intersects the first direction; 
 a semiconductor layer disposed in the non-opening region; and: 
 a storage capacitor including a pixel electrode, a dielectric film, and a capacitor electrode, the pixel electrode is disposed at the intersection of the scanning line and the data line, the capacitor electrode is electrically connected to a capacitance wiring and maintained in a fixed potential, the dielectric film is disposed between the pixel electrode and the capacitor electrode, the capacitor electrode is disposed above and overlapped with the data line,  
 wherein:
 the pixel electrode is electrically connected to the semiconductor layer via a contact hole disposed in an aperture portion of the capacitor electrode, 
 the contact hole is disposed in an opening region through which light penetrates, and 
 the opening region is surrounded by the non-opening region. 
 
 
     
     
       5. The electro-optical device according to  claim 4 ,
 wherein the semiconductor layer is overlapped with the scanning line in plan view. 
 
     
     
       6. The electro-optical device according to  claim 4 ,
 wherein the contact hole is disposed so as not to overlap with the scanning line. 
 
     
     
       7. An electronic apparatus comprising the electro-optical device according to  claim 4 . 
     
     
       8. The electro-optical device according to  claim 1 , wherein the semiconductor layer extends further along the first direction than the second direction. 
     
     
       9. The electro-optical device according to  claim 1 , wherein the semiconductor layer extends further along the second direction than the first direction. 
     
     
       10. The electro-optical device according to  claim 1 , further comprising a relay layer disposed over at least a portion of the semiconductor layer, wherein the relay layer is electrically connected to the semiconductor layer. 
     
     
       11. The electro-optical device according to  claim 10 , wherein the semiconductor layer extends further along the first direction than the second direction. 
     
     
       12. The electro-optical device according to  claim 10 , wherein the semiconductor layer extends further along the second direction than the first direction. 
     
     
       13. The electro-optical device according to  claim 10 , wherein the relay layer extends further along the first direction than the second direction. 
     
     
       14. The electro-optical device according to  claim 10 , wherein the relay layer extends further along the second direction than the first direction. 
     
     
       15. The electro-optical device according to  claim 13 , wherein the semiconductor layer extends further along the second direction than the first direction. 
     
     
       16. The electro-optical device according to  claim 14 , wherein the semiconductor layer extends further along the second direction than the first direction. 
     
     
       17. The electro-optical device according to  claim 14 , wherein the semiconductor layer extends further along the first direction than the second direction.