Semiconductor device and method of manufacturing the same, and electronic apparatus

Abstract

The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device that enable prevention of generation of tape scraps from the dicing tape during dicing, and an electronic apparatus. When a semiconductor substrate on which a protective film for protecting a circuit surface is formed is divided, dicing is performed so as to form a portion in which the section width of the semiconductor substrate differs from the section width of the protective film. The present technology can be applied to a wafer level CSP manufacturing process and the like, for example.

The invention claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising:
 forming a protective film on a semiconductor substrate; and   dividing the semiconductor substrate, wherein
 a first section width of a first portion of the protective film is greater than a section width of the semiconductor substrate, 
 a second section width of a second portion of the protective film is smaller than the section width of the semiconductor substrate, 
 the first portion and the second portion of the protective film are on a same side of the semiconductor substrate, 
 the second portion of the protective film is closer to the semiconductor substrate than the first portion of the protective film, and 
 the protective film covers a circuit surface of the semiconductor device during the division of the semiconductor substrate. 
   
     
     
       2. The method of manufacturing the semiconductor device according to  claim 1 , further comprising:
 forming a slit along a dicing line in the protective film, wherein a dicing tape is attached to the protective film; and   cutting the semiconductor substrate with a blade to a position that reaches the slit.   
     
     
       3. The method of manufacturing the semiconductor device according to  claim 2 , wherein a width of the slit is smaller than a width of the semiconductor substrate which is cut away with the blade. 
     
     
       4. The method of manufacturing the semiconductor device according to  claim 2 , further comprising
 forming the slit by a photolithography technique.   
     
     
       5. The method of manufacturing the semiconductor device according to  claim 2 , further comprising
 forming the slit by dry etching.   
     
     
       6. The method of manufacturing the semiconductor device according to  claim 2 , further comprising
 increasing a width of the slit, by wet etching, after the cutting of the semiconductor substrate with the blade.   
     
     
       7. The method of manufacturing the semiconductor device according to  claim 6 , further comprising
 increasing the width of the slit, to a width similar to a cutting width of the blade, after the cutting of the semiconductor substrate with the blade.   
     
     
       8. The method of manufacturing the semiconductor device according to  claim 6 , further comprising
 increasing the width of the slit, to a width greater than a cutting width of the blade, after the cutting of the semiconductor substrate with the blade.   
     
     
       9. The method of manufacturing the semiconductor device according to  claim 1 , comprising:
 forming a slit along a dicing line in the protective film and the semiconductor substrate, wherein a dicing tape is attached to the protective film, and   cutting the semiconductor substrate with a blade to a position that reaches the slit.   
     
     
       10. The method of manufacturing the semiconductor device according to  claim 9 , wherein
 a first surface of the semiconductor substrate that is cut with the blade is on an opposite side of a second surface of the semiconductor substrate, and   the second surface of the semiconductor substrate includes the slit.   
     
     
       11. The method of manufacturing the semiconductor device according to  claim 1 , wherein the semiconductor device is a solid-state imaging device. 
     
     
       12. A semiconductor device, comprising:
 a semiconductor substrate; and   a protective film on the semiconductor substrate, wherein
 the protective film covers a circuit surface of the semiconductor device, 
 a first section width of a first portion of the protective film is greater than a section width of the semiconductor substrate, 
 a second section width of a second portion of the protective film is smaller than the section width of the semiconductor substrate, 
 the first portion and the second portion of the protective film are on a same side of the semiconductor substrate, and 
 the second portion of the protective film is closer to the semiconductor substrate than the first portion of the protective film. 
   
     
     
       13. An electronic apparatus, comprising:
 a semiconductor device including:
 a semiconductor substrate; and 
 a protective film on the semiconductor substrate, wherein
 the protective film covers a circuit surface of the semiconductor device, 
 a first section width of a first portion of the protective film is greater than a section width of the semiconductor substrate, 
 a second section width of a second portion of the protective film is smaller than the section width of the semiconductor substrate, 
 the first portion and the second portion of the protective film are on a same side of the semiconductor substrate, and 
 the second portion of the protective film is closer to the semiconductor substrate than the first portion of the protective film. 
 
   
     
     
       14. A method of manufacturing a semiconductor device, comprising:
 dividing a semiconductor substrate such that the semiconductor substrate has a section width different from a section width of a protective film;   forming the protective film on the semiconductor substrate, wherein the protective film covers a circuit surface of the semiconductor device during the division of the semiconductor substrate;   forming a slit along a dicing line in the protective film, wherein a dicing tape is attached to the protective film;   cutting the semiconductor substrate with a blade to a position that reaches the slit; and   increasing a width of the slit, by wet etching, after the cutting of the semiconductor substrate with the blade.   
     
     
       15. A semiconductor device, comprising:
 a semiconductor substrate that includes a circuit, and from a cross-section view is bounded by two side surfaces, and two main surfaces; and   a protective film that contacts one of the two main surfaces of the semiconductor substrate;   a first section width of a first portion of the protective film is greater than a section width of the semiconductor substrate, a span of the first section width of the first portion of the protective film being from a first outermost edge of the first portion of the protective film to a second outermost edge of the first portion of the protective film along the first portion;   a second section width of a second portion of the protective film being a same width as the section width of the semiconductor substrate, a span of the second section width of the second portion of the protective film being from a first outermost edge of the second portion of the protective film to a second outermost edge of the second portion of the protective film along the second portion;   the second section width of the second portion of the protective film is smaller than the first section width of the first portion of the protective film;   the first portion and the second portion of the protective film are on a same side of the semiconductor substrate; and   the second portion of the protective film is closer to the one of the two main surfaces of semiconductor substrate than the first portion of the protective film, wherein   a third section width of a third portion of the protective film being longer than the second section width of the protection film and shorter than first second width of the protection film, the third section width being between the first section width and the second section width.    
     
     
       16. The semiconductor device of  claim 15 , wherein from the cross-section view, an outermost edge of the protective film that includes the first section, the third section and the second section and tapers toward an adjacent one of the two side surfaces of the semiconductor substrate.  
     
     
       17. The semiconductor device of  claim 16 , wherein in the cross section view a first outermost edge of the protective film that includes the first section, the third section and the second section includes a taper with an arc portion.  
     
     
       18. The semiconductor device of  claim 17 , wherein in the cross section view a second outermost edge on an opposite side of the protective film that includes the first section, the third section and the second section includes another taper with another arc portion.  
     
     
       19. A semiconductor device, comprising:
 a semiconductor substrate that includes a circuit, and from a cross-section view is bounded by two side surfaces, and two main surfaces; and   a protective film that contacts one of the two main surfaces of the semiconductor substrate;   a first section width of a first portion of the protective film is greater than a section width of the semiconductor substrate, a span of the first section width of the first portion of the protective film being from a first outermost edge of the first portion of the protective film to a second outermost edge of the first portion of the protective film along the first portion;   a second section width of a second portion of the protective film being a same width as the section width of the semiconductor substrate, a span of the second section width of the second portion of the protective film being from a first outermost edge of the second portion of the protective film to a second outermost edge of the second portion of the protective film along the second portion;
 the second section width of the second portion of the protective film is smaller than the first section width of the first portion of the protective film; 
 the first portion and the second portion of the protective film are on a same side of the semiconductor substrate; 
   the second portion of the protective film is closer to the one of the two main surfaces of semiconductor substrate than the first portion of the protective film; and   another substrate on a main surface side of the semiconductor substrate opposite from the protective film, wherein the semiconductor substrate is between the another substrate and the protective film.    
     
     
       20. The semiconductor device of  claim 19 , wherein the another substrate is a glass substrate.  
     
     
       21. The semiconductor device of  claim 20 , wherein from a plan view, a footprint of the first portion of the protective film exceeds a footprint of the another substrate and a footprint of the second portion of the protective film.  
     
     
       22. The semiconductor device of  claim 21 , further comprising a layer of sealing resin between the semiconductor substrate and the another substrate.  
     
     
       23. The semiconductor device of  claim 22 , further comprising:
 a plurality of photodiodes configured to perform photoelectric conversion; and   a plurality of pixel transistors configured to control the photoelectric conversion and reading of photoelectrically-converted electrical signals from respective of the plurality of photodiodes.    
     
     
       24. The semiconductor device of  claim 23 , further comprising: a plurality of color filters and a plurality of on-chip lenses between the plurality of photodiodes and the another substrate.