Light emitting diode chip and light emitting diode display apparatus comprising the same

Abstract

A light emitting diode chip and a light emitting diode display apparatus comprising the same, are disclosed in which a screen defect caused by a defect of the light emitting diode chip is minimized. The light emitting diode chip comprises a semiconductor substrate; first and second light emitting diodes provided on the semiconductor substrate in parallel with each other while having first and second pads; a first electrode commonly connected to the first pad of each of the first and second light emitting diodes; and a second electrode commonly connected to the second pad of each of the first and second light emitting diodes, wherein the first and second light emitting diodes are electrically connected to each other in parallel.

What is claimed is: 
     
       1. A light emitting diode display apparatus comprising:
 a pixel including a driving thin film transistor on a substrate; 
 a first planarization layer covering the pixel on the driving thin film transistor; 
 a light emitting diode chip having first and second electrodes including a first light emitting diode and a second light emitting diode, wherein each of the first and second light emitting diodes includes a first pad and a second pad; 
 a second planarization layer covering the first planarization layer and the light emitting diode chip; 
 a pixel electrode provided on the second planarization layer and electrically connected with the driving thin film transistor and the first electrode pad of each of the light emitting diode chip  first and second light emitting diodes; and 
 a common electrode provided on the second planarization layer and electrically connected to the second electrode pad of each of the light emitting diode chip, 
 wherein the light emitting diode chip includes first and second light emitting diodes provided on a semiconductor substrate in parallel first and second light emitting diodes. 
 
     
     
       2. The light emitting diode display apparatus of  claim 1 , wherein each of the first and second light emitting diodes further includes:
 a first semiconductor layeron the semiconductor substrate; 
 an active layer on the first semiconductor layer; and  
 a second semiconductor layer on the active layer;,  
 awherein the first pad is disposed on the second semiconductor layer;, and 
 awherein the second pad is disposed on the first semiconductor layer. 
 
     
     
       3. The light emitting diode display apparatus of  claim 2 , wherein the light emitting diode chip further includes an insulating layer covering the first and second light emitting diodes, the first pixel electrode is commonly connected to the first pad of each of the first and second light emitting diodes through a first pad contact hole in the insulating layer, and the second common electrode is commonly connected to the second pad through of each of the first and second light emitting diodes through a second pad contact hole in the insulating layer. 
     
     
       4. The light emitting diode display apparatus of  claim 1 , further comprising a common power line provided on the substrate, wherein the pixel electrode is provided on an upper surface of the first planarization layerand electrically connected to the driving thin film transistor and the first electrode of the light emitting diode chip, and the common electrode is provided on the upper surface of the first planarization layer and electrically connected to the common power lineand the second electrode of the light emitting diode chip. 
     
     
       5. The light emitting diode display apparatus of  claim 1 , further comprising a common power line provided on the substrate,
 wherein the pixel electrode is provided on an upper surface of the second planarization layerand electrically connected to the driving thin film transistor and the first electrode of the light emitting diode chip, and 
 wherein the common electrode is provided on the upper surface of the second planarization layer and electrically connected to the common power lineand the second electrode of the light emitting diode chip. 
 
     
     
       6. The light emitting diode display apparatus of  claim 1 , further comprising a recessed portion provided on or in the first planarization layer, receiving the light emitting diode chip; and a unit pixel having at least three pixels arranged to adjacent to one another,
 wherein the recessed portion is provided at a depth different for each of the pixels constituting the unit pixel. 
 
     
     
       7. The light emitting diode display apparatus of  claim 1 , further comprising a reflective layer disposed between the substrate and the first light emitting diode chip. 
     
     
       8. A light emitting diode display device comprising:
 a first pixel including a first driving thin film transistor in a first pixel on a substrate; 
 a first planarization layercovering the first pixel; 
 a first light emitting diode chip disposed in the first planarization layer and including first and second light emitting diodeselectrically connected with each other in parallel, each of the first and second light emitting diodes having first and second electrodes; 
 a first electrode electrically connected to the first and second light emitting diodes; 
 a second electrode electrically connected to the first and second light emitting diodes;  
 a pixel electrode electrically connecting the first driving thin film transistor and the first electrodeof the first light emitting diode chip; and 
 a common electrode electrically connected to the second electrodeof the first light emitting diode chip, 
 wherein each of the first and second light emitting diodes comprise comprises: 
 a first semiconductor layer on the substrate; 
 an active layer on the first semiconductor layer; 
 a second semiconductor layer on the active layer; 
 a first pad on the second semiconductor layer; and 
 a second pad on the first semiconductor layer, 
 wherein the first light emitting diode chip further includes an insulating layer covering at least a part of the first and second light emitting diodes, and 
 wherein the first electrode is commonly connected to the first pad of each of the first and second light emitting diodes through a first pad contact hole in the insulating layer, and the second electrode is commonly connected to the second pad through of each of the first and second light emitting diodes through a second pad contact hole in the insulating layer. 
 
     
     
       9. The light emitting diode display device of  claim 8 , further comprising second pixel adjacent to the first pixel and having a second light emitting diode chip disposed in the first planarization layer, and a top surface of the first light emitting diode chip in horizontally in line with a top surface of the second light emitting diode chip in a second pixel adjacent to the first pixel. 
     
     
       10. The light emitting diode display apparatus device of  claim 9 , wherein:
 the first light emitting diode chip is disposed in a first recessed portion of the first planarization layer, and  
 the second light emitting diode chip is disposed in a second recessed portion of the first planarization layer, 
 the first and second recessed portion have a depth different from each other. 
 
     
     
       11. The light emitting diode display apparatus device of  claim 8 , further comprising a common power line provided on the substrate, wherein the pixel electrode is disposed on an upper surface of the first planarization layer and electrically connected to the first driving thin film transistor and the first electrode of the first light emitting diode chip, and the common electrode is provided on the upper surface of the first planarization layer and electrically connected to the common power line and the second electrode of the first light emitting diode chip. 
     
     
       12. The light emitting diode display apparatus device of  claim 11 , further comprising:
 a second planarization layer covering the first planarization layer and the first light emitting diode chip, wherein each of the pixel electrode and the common electrode is provided on the second planarization layer. 
 
     
     
       13. The light emitting diode display apparatus device of  claim 8 , further comprising a second pixel adjacent to the first pixel and having a second light emitting diode chip disposed in the first planarization layer;
 a second planarization layer covering the first planarization layer, the first light emitting diode chip and the second light emitting diode chip; and 
 a common power line provided on the substrate, 
 wherein the second light emitting diode chip includes first and second light emitting diodes having first and second electrodes and electrically connected with each other in parallel, and 
 wherein the common electrode is further provided on the upper surface of the second planarization layer and further electrically connected to the common power line and the second electrode of the second light emitting diode chip. 
 
     
     
       14. The light emitting diode display apparatus device of  claim 8 , further comprising a reflective layer disposed between the substrate and the light emitting diode chip. 
     
     
       15. The light emitting diode display apparatus of  claim 1 , wherein the light emitting diode chip is configured to emit one of a red light, a green light, a blue light, and a white light. 
     
     
       16. The light emitting diode display apparatus of  claim 2 , wherein the first semiconductor layer comprises an n-GaN based semiconductor material. 
     
     
       17. The light emitting diode display apparatus of  claim 16 , wherein the n-GaN based semiconductor material comprises at least one of GaN, AlGaN, InGaN, AlInGaN, Si, Ge, Se, Te, and C. 
     
     
       18. The light emitting diode display apparatus of  claim 2 , wherein the second semiconductor layer comprises a p-GaN based semiconductor material. 
     
     
       19. The light emitting diode display apparatus of  claim 18 , wherein the p-GaN based semiconductor material comprises one of GaN, AlGaN, InGaN, AlInGaN, Mg, Zn, and Be. 
     
     
       20. The light emitting diode display apparatus of  claim 2 , wherein the active layer has a multi quantum well structure comprising a well layer and a barrier layer, and
 wherein the barrier layer has a band gap higher than that of the well layer.   
     
     
       21. The light emitting diode display apparatus of  claim 2 , wherein the second pad is electrically isolated from the active layer and the second semiconductor layer. 
     
     
       22. The light emitting diode display apparatus of  claim 1 , wherein the first pad and/or the second pad comprises a conductive transparent material or a conductive reflective material. 
     
     
       23. The light emitting diode display apparatus of  claim 22 , wherein the conductive transparent material comprises ITO or IZO. 
     
     
       24. The light emitting diode display apparatus of  claim 22 , wherein the conductive reflective material comprises one of Au, W, Pt, Si, Ir, Ag, Cu, Ni, Ti, and Cr. 
     
     
       25. The light emitting diode display apparatus of  claim 1 , wherein one of the first and second light emitting diodes serves as a redundancy light emitting diode. 
     
     
       26. The light emitting diode display apparatus of  claim 1 , wherein the first planarization layer comprises benzocyclobutene or photo acryl. 
     
     
       27. The light emitting diode display apparatus of  claim 1 , wherein the pixel electrode overlaps with the driving thin film transistor. 
     
     
       28. The light emitting diode display apparatus of  claim 1 , wherein the pixel electrode is electrically connected to the driving thin film transistor through a contact hole that passes through the first and second planarization layers. 
     
     
       29. The light emitting diode display apparatus of  claim 1 , wherein at least one of the pixel electrode and the common electrode comprises ITO or IZO. 
     
     
       30. The light emitting diode display apparatus of  claim 1 , further comprising a light extraction layer or a color filter layer disposed on the light emitting diode chip. 
     
     
       31. The light emitting diode display apparatus of  claim 30 , wherein the light extraction layer is configured to extract light emitted from the light emitting diode chip. 
     
     
       32. The light emitting diode display apparatus of  claim 1 , further comprising a wavelength conversion layer. 
     
     
       33. The light emitting diode display apparatus of  claim 4 , wherein the common power line is in parallel with a gate line. 
     
     
       34. The light emitting diode display apparatus of  claim 6 , further comprising a unit pixel having at least three pixels arranged to adjacent to one another, wherein the recessed portion is provided at a depth different for each of the pixels constituting the unit pixel. 
     
     
       35. The light emitting diode display apparatus of  claim 6 , wherein a bottom surface of the light emitting diode chip is in a direct contact with a layer different from the first planarization layer. 
     
     
       36. The light emitting diode display apparatus of  claim 6 , wherein the first planarization layer comprises a groove formed throughout a depth direction of the first planarization layer, and
 wherein the groove comprises the recessed portion.   
     
     
       37. The light emitting diode display device of  claim 8 , wherein the first and second light emitting diodes are electrically connected with each other in parallel. 
     
     
       38. The light emitting diode display device of  claim 8 , wherein the first electrode and the pixel electrode are made of a same material. 
     
     
       39. The light emitting diode display device of  claim 38 , wherein the first electrode and the pixel electrode are made of ITO or IZO. 
     
     
       40. The light emitting diode display device of  claim 8 , wherein the second electrode and the common electrode are made of a same material. 
     
     
       41. The light emitting diode display device of  claim 40 , wherein the second electrode and the common electrode are made of ITO or IZO. 
     
     
       42. The light emitting diode display device of  claim 9 , wherein the first light emitting diode chip has a height different from a height of the second light emitting diode chip. 
     
     
       43. The light emitting diode display device of  claim 9 , wherein a top surface of the first light emitting diode chip is horizontally in line with a top surface of the second light emitting diode chip. 
     
     
       44. The light emitting diode display device of  claim 10 , wherein the first and second recessed portions have a depth different from each other. 
     
     
       45. The light emitting diode display device of  claim 8 , further comprising a gate driving circuit configured to:
 generate a gate pulse based on a gate signal from a panel driver; and   transmit the generated gate pulse to a gate line.   
     
     
       46. The light emitting diode display device of  claim 45 , further comprising a display area including the first pixel and a non-display area,
 wherein the gate driving circuit is disposed in a first portion of the non-display area and formed by a process that is the same as a process of forming the first driving thin film transistor.   
     
     
       47. The light emitting diode display device of  claim 46 , wherein the first portion of the non-display area is located at a left side or a right side of the display area. 
     
     
       48. The light emitting diode display device of  claim 46 , wherein the panel driver is connected to a second portion of the non-display area and configured to display an image on the display area, and
 wherein the image corresponds to image data transmitted from a display driving system.   
     
     
       49. The light emitting diode display device of  claim 8 , wherein the first electrode comprises:
 a first connection electrode;   a second connection electrode; and   a bridge electrode extending, within the first pixel, from the first connection electrode to the second connection electrode,   wherein the first connection electrode, the second connection electrode, and the bridge electrode are disposed on a same plane.   
     
     
       50. The light emitting diode display device of  claim 49 , wherein at least a portion of the second electrode is disposed between the first connection electrode and the second connection electrode.