Displays with silicon and semiconducting-oxide top-gate thin-film transistors

Abstract

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels, that include hybrid thin-film transistor structures formed using semiconducting-oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. A drive transistor in the display pixel may be a top-gate semiconducting-oxide thin-film transistor and a switching transistor in the display pixel may be a top-gate silicon thin-film transistor. A storage capacitor in the display may include a conductive semiconducting-oxide electrode.

What is claimed is: 
     
       1. A display comprising:
 a semiconducting-oxide drive transistor, wherein the semiconducting-oxide drive transistor is a top-gate transistor;   a storage capacitor coupled to the drive transistor, wherein the storage capacitor comprises conductive oxide, and wherein the storage capacitor is formed in the same layer in the display as the semiconducting-oxide drive transistor;   a silicon switching transistor coupled to the semiconducting-oxide drive transistor, wherein the silicon switching transistor is formed on a substrate, and wherein the semiconducting-oxide drive transistor is formed above the silicon switching transistor;   an organic layer formed on the semiconducting-oxide drive transistor;   a metal layer laterally coupling a source-drain terminal of the semiconducting-oxide drive transistor to a source-drain terminal of the silicon switching transistor, wherein the metal layer is not formed through the organic layer; and   a conductive structure electrically coupled to a gate conductor of the top-gate transistor, wherein the conductive structure is not formed through the organic layer.   
     
     
       2. The display of  claim 1 , further comprising:
 a light-emitting diode coupled in series with the drive transistor.   
     
     
       3. The display of  claim 2 , wherein the silicon switching transistor is configured to selectively pass current through the drive transistor to the light-emitting diode. 
     
     
       4. The display of  claim 2 , further comprising:
 a first power supply line; and   a second power supply line, wherein the semiconducting-oxide drive transistor, the silicon switching transistor, and the light-emitting diode are coupled in series between the first and second power supply lines.   
     
     
       5. The display of  claim 1 , further comprising:
 a light-emitting diode coupled in series with the drive transistor; and   an additional organic layer formed on the organic layer, wherein the light-emitting diode has an anode layer that is formed on the additional organic layer.   
     
     
       6. The display of  claim 1 , further comprising:
 a conductive segment formed in a bending region of the display, the conductive segment and the metal layer are at least partially formed in the same gate metal layer.   
     
     
       7. The display of  claim 1 , further comprising:
 a conductive structure formed directly below the semiconducting-oxide drive transistor in a given metal layer; and   a storage capacitor coupled to the drive transistor, the storage capacitor comprises a capacitor plate in the given metal layer.   
     
     
       8. The display of  claim 1 , wherein the silicon switching transistor comprises a gate structure formed in a given metal layer, the display further comprising:
 a storage capacitor coupled to the drive transistor, the storage capacitor comprises a capacitor plate in the given metal layer.   
     
     
       9. The display of  claim 1 , wherein the semiconducting-oxide drive transistor does not include a bottom gate. 
     
     
       10. A display comprising:
 a drive transistor having a gate terminal and a source terminal;   a metal segment formed directly below the drive transistor;   a capacitor coupled to the drive transistor, wherein the capacitor comprises a first terminal formed from conductive oxide and a second terminal formed from an additional metal segment separate from the metal segment, wherein the additional metal segment is formed in the same layer as the metal segment, and wherein the capacitor is configured to store a voltage across the gate and source terminals of the drive transistor.   
     
     
       11. The display of  claim 10 , further comprising:
 a light-emitting diode coupled in series between the drive transistor.   
     
     
       12. The display of  claim 10 , further comprising:
 a dielectric layer formed below the drive transistor, wherein the drive transistor comprises semiconducting-oxide material, and wherein the conductive oxide of the capacitor and the semiconducting-oxide material of the drive transistor are formed on the dielectric layer.   
     
     
       13. The display of  claim 10 , further comprising:
 a switching transistor coupled to the drive transistor, wherein the switching transistor has a gate formed below the metal segment.   
     
     
       14. The display of  claim 10 , further comprising:
 a capacitor; and   an additional routing path coupling the capacitor to the switching transistor, wherein the routing path and the additional routing path include lateral routing portions that are formed in the same layer.   
     
     
       15. A display comprising:
 a drive transistor having a source-drain terminal;   a switching transistor coupled to the drive transistor;   a conductive routing path having a first terminal contact that is coupled to the drive transistor and a second terminal contact that is coupled to the switching transistor; and   a conductive etch-stop liner interposed between the source-drain terminal of the drive transistor and the first terminal contact.   
     
     
       16. The display of  claim 15 , wherein the drive transistor comprises semiconducting-oxide and the switching transistor is a silicon transistor. 
     
     
       17. The display of  claim 16 , wherein the drive transistor is a top-gate transistor. 
     
     
       18. The display of  claim 15 , wherein the second terminal contact of the conductive routing path comprises only one via. 
     
     
       19. A display, comprising:
 a semiconducting-oxide transistor;   a storage capacitor coupled to the semiconducting-oxide transistor;   a silicon switching transistor coupled to the semiconducting-oxide transistor, wherein the silicon switching transistor is formed on a substrate, wherein the semiconducting-oxide transistor is formed above the silicon switching transistor, wherein the silicon switching transistor has a gate conductor formed in a gate layer, and wherein the storage capacitor has a terminal formed in the gate layer;   an organic layer formed over the semiconducting-oxide transistor; and   a metal layer laterally coupling a source-drain terminal of the semiconducting-oxide transistor to a source-drain terminal of the silicon switching transistor, wherein the metal layer is not formed through the organic layer.   
     
     
       20. The display of  claim 19 , further comprising:
 a light-emitting diode coupled to the semiconducting-oxide transistor.   
     
     
       21. The display of  claim 20 , further comprising:
 a first power supply line; and   a second power supply line, wherein the silicon switching transistor and the light-emitting diode are coupled in series between the first and second power supply lines.   
     
     
       22. The display of  claim 19 , further comprising:
 a light-emitting diode coupled to the semiconducting-oxide transistor; and   an additional organic layer formed on the organic layer, wherein the light-emitting diode has an anode layer that is formed on the additional organic layer.   
     
     
       23. The display of  claim 19 , wherein the semiconducting-oxide transistor comprises a metal layer that includes molybdenum. 
     
     
       24. A method of fabricating a display, comprising:
 forming a silicon transistor on a semiconductor substrate, the silicon transistor having silicon material formed in a silicon layer and having a first gate conductor formed in a first gate layer;   forming a semiconducting-oxide transistor coupled to the silicon transistor, the semiconducting-oxide transistor having semiconducting-oxide material formed in a semiconducting-oxide layer and having a second gate conductor formed in a second gate layer;   forming a storage capacitor coupled to the semiconducting-oxide transistor, the storage capacitor having a capacitor terminal formed in the first gate layer;   forming an organic layer over the semiconducting-oxide transistor; and   forming a metal layer laterally coupling a source-drain terminal of the semiconducting-oxide transistor to a source-drain terminal of the silicon transistor, wherein the metal layer is not formed through the organic layer.   
     
     
       25. The method of  claim 24 , further comprising:
 forming an additional organic layer on the organic layer; and   forming an anode layer on the additional organic layer.   
     
     
       26. The method of  claim 25 , wherein the storage capacitor has an additional capacitor terminal formed from semiconducting-oxide material in the semiconducting-oxide layer. 
     
     
       27. The method of  claim 25 , wherein the additional capacitor terminal is formed subsequent to forming the capacitor terminal. 
     
     
       28. The method of  claim 25 , wherein forming the semiconducting-oxide transistor comprises forming a molybdenum metal layer. 
     
     
       29. A display pixel comprising:
 a first transistor having a first gate conductor formed in a first gate layer;   a second transistor having semiconducting-oxide material formed in a semiconducting-oxide layer and having a second gate conductor formed in a second gate layer different than the first gate layer;   a capacitor having a terminal formed in the first gate layer;   a metal layer laterally coupling a source-drain terminal of the second transistor to a source-drain terminal of the first transistor;   a first organic planarization layer, wherein the metal layer is not formed through the first organic planarization layer; and   a second organic planarization layer formed on the first organic planarization layer.   
     
     
       30. The display pixel of  claim 29 , wherein the first and second organic planarization layers comprise organic layers. 
     
     
       31. The display pixel of  claim 29 , wherein the second transistor comprises a molybdenum metal layer. 
     
     
       32. The display pixel of  claim 29 , wherein the first transistor comprises silicon material formed in a silicon layer. 
     
     
       33. The display pixel of  claim 32 , wherein the silicon layer is formed below the first gate layer. 
     
     
       34. The display pixel of  claim 33 , wherein the first gate layer is formed below the semiconducting-oxide layer. 
     
     
       35. The display pixel of  claim 34 , wherein the semiconducting-oxide layer is formed below the second gate layer. 
     
     
       36. The display pixel of  claim 29 , wherein the capacitor comprises an additional terminal formed in the semiconducting-oxide layer. 
     
     
       37. The display pixel of  claim 36 , wherein the terminal of the capacitor is formed below the additional terminal of the capacitor.