Display device and manufacturing method thereof

Abstract

An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode. The transmission windows can be formed in the second electrode, that is, a cathode.

What is claimed is: 
     
       1. A method of manufacturing an organic light emitting display device, the method comprising:
 defining a plurality of pixels on a substrate, each of the pixels comprising a first region that emits light and a second region that transmits external light;   forming a plurality of thin film transistors in the first region of each pixel;   forming a plurality of first electrodes electrically connected to the plurality of thin film transistors, respectively, in the first region of each pixel;   forming an organic layer on the plurality of first electrodes; and   forming a second electrode on the organic layer in the first region by using a mask having a pattern of apertures corresponding to the first region, such that the formed second electrode defines a plurality of transmission windows that each correspond to the second region, and such that the formed second electrode is absent from the second region.   
     
     
       2. The method of  claim 1 , wherein the apertures are separated from each other at regular intervals. 
     
     
       3. The method of  claim 2 , wherein the apertures are separated from each other at intervals smaller than or equal to a distance corresponding to at least one pixel. 
     
     
       4. A method of manufacturing an organic light emitting display device, the method comprising:
 forming a first pixel including a first electrode and a first organic layer on the first electrode;   forming a second pixel including a second electrode and a second organic layer on the second electrode; and   forming an opposite electrode on the first organic layer and the second organic layer;   wherein at least a portion of the opposite electrode that overlaps the first electrode of the first pixel is connected to at least a portion of the opposite electrode that overlaps the second electrode of the second pixel, and the opposite electrode includes an opening located between the first electrode and the second electrode.    
     
     
       5. The method of  claim 4 , wherein the opening is a rectangle shape.  
     
     
       6. The method of  claim 4 , further comprising:
 forming a plurality of thin film transistors electrically connected to each of the first electrode and the second electrode.    
     
     
       7. The method of  claim 4 ,
 wherein the first pixel and the second pixel on a substrate, each of the pixels comprising a first region that emits light and a second region that transmits external light.    
     
     
       8. The method of  claim 7 ,
 wherein the opposite electrode by using a mask having a pattern of apertures corresponding to the first region, such that the formed opposite electrode defines the opening that each correspond to the second region, and such that the formed opposite electrode is absent from the second region.    
     
     
       9. The method of  claim 7 ,
 wherein the light transmittance of the second region is higher than the light transmittance of the first region.    
     
     
       10. The method of  claim 4 ,
 wherein a width of the opening in a first direction perpendicular to a second direction is greater than a width of an emission region of the first pixel.    
     
     
       11. The method of  claim 4 ,
 wherein a width of the opening in a first direction perpendicular to a second direction is smaller than a width of an emission region of the first pixel.    
     
     
       12. The method of  claim 4 , further comprising:
 forming a first insulating layer including a plurality of first openings exposing a portion of each of the first electrode of the first pixel and second electrode of second pixel, and a second opening overlapping the opening of the opposite electrode.    
     
     
       13. The method of  claim 12 ,
 wherein the first insulating layer further includes an upper surface and an inclined surface adjacent to the second opening, wherein an edge portion of the opening of the second electrode overlaps the inclined surface of the first insulating layer in the plan-view.    
     
     
       14. The method of  claim 13 , further comprising:
 forming a second insulation layer between the substrate and the first insulation layer, the second insulation layer comprising an open portion overlapping the opening of the opposite electrode.    
     
     
       15. The method of  claim 14 , further comprising:
 wherein the first pixel further comprises at least one transistor connected to the first electrode of the first pixel, and the second insulation layer is between the transistor and the first electrode.    
     
     
       16. The method of  claim 15 , further comprising:
 forming a third insulation layer between the substrate and transistor, the third insulation layer comprising an open portion overlapping the opening of the opposite electrode.    
     
     
       17. The method of  claim 16 , further comprising:
 wherein the at least one transistor comprises a semiconductor layer on the third insulation layer, a gate electrode on the semiconductor layer, and a drain electrode on the gate electrode.    
     
     
       18. The method of  claim 17 , further comprising:
 forming a fourth insulation layer between the semiconductor layer and the gate electrode, the fourth insulation layer comprising an open portion overlapping the opening of the opposite electrode.    
     
     
       19. The method of  claim 18 , further comprising:
 forming a fifth insulation layer between the gate electrode and the drain electrode, the fifth insulation layer comprising an open portion overlapping the opposite electrode.    
     
     
       20. The method of  claim 14 , further comprising:
 forming a third insulation layer on the substrate;   forming a fourth insulation layer on the third insulation layer; and   forming a fifth insulation layer on the fourth insulation layer; and   wherein at least one of the third insulation layer, the fourth insulation layer, and the fifth insulation layer comprises an open portion overlapping the opening of the opposite electrode.    
     
     
       21. The method of  claim 20 , wherein the first electrode of the first pixel is an anode, and the opposite electrode is a cathode.  
     
     
       22. The method of  claim 4 , further comprising:
 forming a third pixel including a third electrode and a third organic layer on the third electrode;   forming a fourth pixel including a fourth electrode and a fourth organic layer on the fourth electrode; and,   wherein the third pixel and the fourth pixel which are adjacent to the first pixel in a first direction perpendicular to a second direction.