Method for manufacturing light emitting device, and light emitting device

Abstract

A method for manufacturing a light-emitting device, comprising: forming, over a substrate, a plurality of multilayered light-emitting structures each including a first electrode, a light-emitting layer, and a second electrode; forming, in the substrate, a plurality of grooves that surround the multilayered light-emitting structures individually; forming, over the substrate, a sealing film that covers the multilayered light-emitting structures and the grooves; and separating the multilayered light-emitting structures from one another after forming the sealing film, by cutting the substrate such that, in each groove, part of the sealing film covering a given inner side surface of the groove remains, the given inner side surface being adjacent to any of the multilayered light-emitting structures.

The invention claimed is: 
     
       1. A light-emitting device, comprising:
 a substrate having a top surface, a bottom surface, and an outer side surface;   a multilayered light-emitting structure disposed over the top surface of the substrate, and including a first electrode, a light-emitting layer, and a second electrode; and   a sealing film covering the multilayered light-emitting structure, wherein the substrate includes a gas barrier layer that opposes the sealing film via the multilayered light-emitting structure, and   the outer side surface of the substrate includes a first region extending from the top surface of the substrate to the gas barrier layer, and a second region extending from the gas barrier layer to the bottom surface of the substrate, the first region being covered by the sealing film, and a part of the second region is covered by the sealing film while another part of the second region is not covered by the sealing film,   wherein the gas barrier material is an electrical insulator.   
     
     
       2. The light-emitting device of  claim 1 , wherein the substrate further comprises:
 a thin film transistor layer disposed above the gas barrier layer; and   a resin film layer disposed below the gas barrier layer.   
     
     
       3. The light-emitting device of  claim 2 , wherein a portion of the resin film layer extends outwards from the outer side surface to be longer than at least one of the thin film transistor layer and the gas barrier layer in a direction of the extension. 
     
     
       4. The light-emitting device of  claim 2 , wherein the first electrode and the second electrode contact the thin film transistor layer. 
     
     
       5. The light-emitting device of  claim 2 , wherein the thin film transistor layer is a flat structure without protrusions or recesses. 
     
     
       6. A light-emitting device comprising:
 a substrate;   a resin film on the substrate;   a gas barrier layer on the resin film;   a thin film transistor layer on the gas barrier layer;   a first electrode on the thin film transistor layer;   a light-emitting layer on the first electrode;   a second electrode on the light-emitting layer;   a first sealing film on the second electrode, the first sealing film comprising a first inorganic material;   a first resin layer on the first sealing film; and   a second sealing film on the first resin layer, the second sealing film comprising a second inorganic material,   wherein a first portion of the first sealing film overlays the second electrode and is separated from the second sealing film with the first resin layer interposed therebetween, and   wherein a second portion of the first sealing film is adjacent to the second sealing film without the first resin layer interposed therebetween, the second portion of the first sealing film being extended from the first portion of the first sealing film.   
     
     
       7. The light-emitting device of  claim 6 , wherein the gas barrier layer is an electrical insulator. 
     
     
       8. The light-emitting device of  claim 7 , wherein the gas barrier layer comprises a third inorganic material. 
     
     
       9. The light-emitting device of  claim 8 , wherein the first inorganic material and the third inorganic material is silicon nitride, and
 wherein the second inorganic material is silicon nitride or aluminum oxide.   
     
     
       10. The light-emitting device of  claim 6 , wherein the second portion of the first sealing film contacts the second sealing film. 
     
     
       11. The light-emitting device of  claim 6 , wherein an end portion of the first sealing film is located closer to a multilayered structure than an end portion of the second sealing film, the multilayered structure comprising the first electrode, the light-emitting layer, and the second electrode. 
     
     
       12. The light-emitting device of  claim 11 , wherein a portion of the second sealing film is adjacent to the gas barrier layer without the first resin layer, the first sealing film, and the multilayered structure interposed therebetween, and
 wherein the end portion of the first sealing film is located closer to the multilayered structure than the portion of the second sealing film.   
     
     
       13. The light-emitting device of  claim 12 , wherein the portion of the second sealing film contacts a portion of the gas barrier layer. 
     
     
       14. The light-emitting device of  claim 11 , wherein the second sealing film and the first sealing film are adjacent to the thin film transistor layer without the multilayered structure interposed therebetween. 
     
     
       15. The light-emitting device of  claim 6 , further comprising a touch panel sensor,
 wherein an electrode of the touch panel sensor is over the second sealing film with a second resin layer interposed therebetween.