Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first element isolating area, a first element area surrounding the first element isolating area, a second element isolating area surrounding the first element area a first gate electrode provided on and across the first element isolating area, the first element area, and the second element isolating area, and a second gate electrode isolated from the first gate electrode and provided on and across the first element isolating area, the first element area, and the second element isolating area.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first element isolating area;   a first element area surrounding all sides of the first element isolating area, and including first to fourth regions, the first and second regions extending in a first direction, the third and fourth regions extending in a second direction different from the first direction, the first region being connected to one end portion of the third region and one end portion of the fourth region, the second region being connected to the other end portion of the third region and the other end portion of the fourth region;   a second element isolating area surrounding all sides of the first element area;   a first gate electrode provided on and across the first element isolating area, the first region, and the second element isolating area;   a second gate electrode isolated from the first gate electrode and provided on and across the first element isolating area, the second region, and the second element isolating area;   a first gate insulation film provided between the first region and the first gate electrode;   a second gate insulation film provided between the second region and the second gate electrode;   a third element isolating area;   a second element area surrounding all sides of the third element isolating area, all sides of the second element area surrounded by the second element isolating area;   a third gate electrode provided on and across the third element isolating area, the second element area, and the second element isolating area; and   a fourth gate electrode isolated from the third gate electrode and provided on and across the third element isolating area, the second element area, and the second element isolating area, wherein   the first gate electrode and the first element area forms a first transistor,   the second gate electrode and the first element area forms a second transistor, the first element area forms a rectangular annular shape,   the second element area forms a rectangular annular shape,   a transistor of a first conductive-type is formed by the first gate electrode and the first element area, and a transistor of a second conductive-type which is different from the first conductive-type is formed by the third gate electrode and the second element area, and   the first element area and the second element area are different from each other in outer dimension in the first direction.   
     
     
         2 . The device of  claim 1 , wherein the first gate electrode and the second gate electrode are aligned in a channel width direction. 
     
     
         3 . The device of  claim 1 , further comprising:
 a first channel region provided under the first gate electrode and in the first element area;   a first source/drain region provided in the first element area in a manner sandwiching the first channel region;   a second channel region provided under the third gate electrode and in the second element area; and   a second source/drain region provided in the second element area in a manner sandwiching the second channel region,   wherein a dimension of the first source/drain region is smaller than a dimension of the second source/drain region.   
     
     
         4 . The device of  claim 1 , wherein the third region and the fourth region are provided symmetrically. 
     
     
         5 . The device of  claim 1 , wherein
 a channel surface of the first and second transistor is set to (100) plane, and   a channel length direction of the first and second transistor is set to <100> direction.   
     
     
         6 . The device of  claim 1 , wherein
 no control gate electrode is provided above the first gate electrode and the second gate electrode.   
     
     
         7 . The device of  claim 1 , wherein
 no control gate electrode is provided above a drain of the first transistor, a source of the first transistor, a drain of the second transistor and a source of the second transistor.   
     
     
         8 . The device of  claim 1 , wherein
 the first direction is a channel length direction of the first and second transistors.   
     
     
         9 . The device of  claim 8 , wherein
 the first element area and the second element area are equal to each other in inner dimension in the first direction.   
     
     
         10 . The device of  claim 8 , wherein
 the first element area and the second element area are different from each other in inner dimension in the first direction.   
     
     
         11 . The device of  claim 1 , wherein
 the first and second element areas have outer and inner dimensions designed to adjust stress from the first and second element isolating areas to the first transistor and stress from the second and third element isolating areas to the second transistor.   
     
     
       12. A semiconductor device comprising:
 a first element isolating area made of an insulating material;   a first element area surrounding sides of the first element isolating area, and including first to fourth regions, the first and second regions extending in a first direction, the third and fourth regions extending in a second direction orthogonal to the first direction, the first region being connected to one end portion of the third region and one end portion of the fourth region, the second region being connected to the other end portion of the third region and the other end portion of the fourth region,
 the first region having a first source/drain region, a first channel region and a second source/drain region arranged in this order along first direction, and 
 the second region including a third source/drain region, a second channel region and a fourth source/drain region arranged in this order along first direction; 
   a first gate electrode provided on and across the first element isolating area and the first channel region of the first region, the first gate electrode extending in the second direction and having a first end;   a second gate electrode isolated from the first gate electrode and provided on and across the first element isolating area and the first channel region of the second region, the second gate electrode extending in the second direction and having a second end facing the first end;   a first gate insulation film provided between the first region and the first gate electrode; a second gate insulation film provided between the second region and the second gate electrode;   a second element isolating area made of an insulating material;   a second element area surrounding sides of the second element isolating area;   a third gate electrode provided on and across the second element isolating area and the second element area; and   a fourth gate electrode isolated from the third gate electrode and provided on and across the second element isolating area and the second element area, wherein   the first gate electrode and the first element area form a first transistor,   the second gate electrode and the first element area form a second transistor,   a channel length direction of the first transistor is aligned in the first direction,   a channel length direction of the second transistor is aligned in the first direction,   the channel length directions of the first and second transistors are shifted from each other when viewed in the first direction,   the first element area forms a substantially rectangular annular shape,   the second element area forms a substantially rectangular annular shape,   a transistor of a first conductive-type is formed by the first gate electrode and the first element area, and a transistor of a second conductive-type which is different from the first conductive-type is formed by the third gate electrode and the second element area, and   the first element area and the second element area are different from each other in outer dimension in the first direction.    
     
     
       13. The device of  claim 12 , wherein
 a channel surface of the first and second transistor is set to (100) plane, and   a channel length direction of the first and second transistor is set to <100> direction.    
     
     
       14. The device of  claim 12 , wherein
 the first element area and the second element area are equal to each other in inner dimension in the first direction.    
     
     
       15. The device of  claim 12 , wherein
 the first element area and the second element area are different from each other in inner dimension in the first direction.    
     
     
       16. The device of  claim 12 , wherein
 the first and second element areas have outer and inner dimensions designed to adjust stress from the first element isolating area to the first transistor and stress from the second element isolating area to the second transistor.    
     
     
       17. The device of  claim 12 , wherein
 when viewed in the second direction, the first and second gate electrodes are aligned with each other.    
     
     
       18. The device of  claim 12 , wherein
 the second element area includes fifth to eighth regions, the fifth and sixth regions extending in the first direction, the seventh and eighth regions extending in the second direction, the fifth region being connected to one end portion of the seventh region and one end portion of the eighth region, the sixth region being connected to the other end portion of the seventh region and the other end portion of the eighth region,   the fifth region has a fifth source/drain region, a third channel region and a sixth source/drain region arranged in this order along first direction,   the sixth region includes a seventh source/drain region, a fourth channel region and an eighth source/drain region arranged in this order along first direction;   the third gate electrode is provided on and across the first element isolating area and the third channel region of the first region, and   the second gate electrode is provided on and across the first element isolating area and the fourth channel region of the second region.    
     
     
       19. The device of  claim 12 , wherein
 the third gate electrode extending in the second direction and having a third end, and   the fourth gate electrode extending in the second direction and having a fourth end facing the third end.    
     
     
       20. The device of  claim 19 , wherein
 when viewed in the second direction, the third and fourth gate electrodes are aligned with each other.    
     
     
       21. The device of  claim 12 , wherein
 the transistor of the first conductive-type is formed by the first gate electrode and areas of the first region of the first element area adjacent to the first gate electrode, and   the transistor of the second conductive-type is formed by the third gate electrode and regions of the second element area adjacent to the third gate electrode.    
     
     
       22. The device of  claim 12 , wherein
 the third gate electrode and the second element area form a third transistor,   the fourth gate electrode and the second element area form a fourth transistor,   a channel length direction of the third transistor is aligned in the first direction,   a channel length direction of the fourth transistor is aligned in the first direction, and   the channel length directions of the third and fourth transistors are shifted from each other when viewed in the first direction.