Electronic device

Abstract

An electronic device comprises a target substrate, a micro semiconductor structure array, a conductor array, and a connection layer. The micro semiconductor structure array is disposed on the target substrate. The conductor array corresponds to the micro semiconductor structure array, and electrically connects the micro semiconductor structure array to a pattern circuit of the target substrate. The conductors of the conductor array are independent from one another. Each conductor is an integrated member formed by eutectic bonding a conductive pad of the target substrate and a conductive electrode of the corresponding one of the micro semiconductor structures of the micro semiconductor structure array. The connection layer connects the micro semiconductor structures to the target substrate. The connection layer excludes a conductive material. The connection layer contacts and surrounds the conductors, so that the connection layer and the conductors together form a one-layer structure.

What is claimed is: 
     
         1 . An electronic device, comprising:
 a target substrate;   a micro semiconductor structure array comprising a plurality of micro semiconductor structures arranged in an array disposed on the target substrate;   a conductor array comprising a plurality of conductors arranged in an array, wherein the conductors are disposed corresponding to the micro semiconductor structures and electrically connecting the micro semiconductor structures to the target substrate, the conductors are independent and individual to one another, each of the conductors is an integrated member formed by eutectic bonding a conductive pad of the target substrate and a conductive electrode of a corresponding one of the micro semiconductor structures, and each of the conductors comprises a first end connecting to the corresponding micro semiconductor structure, a second end connecting to the target substrate, and a peripheral portion connecting to the first end and the second end; and   a connection layer connecting the micro semiconductor structures to the target substrate, wherein the connection layer is nonconductive, the connection layer contacts and surrounds the peripheral portion of each of the conductors, and the connection layer and the conductors together form a one-layer structure,   wherein the connection layer comprises a polymer material, the polymer material is defined with a viscosity-temperature variation characteristic, the polymer material has a first viscosity at a first temperature, a second viscosity at a second temperature, a third viscosity at a third temperature, a fourth viscosity at a fourth temperature, and a fifth viscosity at a fifth temperature, the first temperature to the fifth temperature are increased sequentially, the first temperature is a room temperature, the fifth temperature is a glass transition temperature of the polymer material, the third viscosity and the fifth viscosity are threshold values, the third viscosity is a minimum threshold value, the fifth viscosity is a maximum threshold value, the second viscosity is close to the third viscosity, the conductive pad comprises a first metal, the conductive electrode comprises a second metal, the first metal and the second metal have a eutectic temperature, the eutectic temperature is between the third temperature and the fourth temperature, the fourth temperature is the temperature of starting solidification of the polymer material.   
     
     
         2 . The electronic device of  claim 1 , wherein each of the conductors is formed by a eutectic bonding of an In—Au alloy system. 
     
     
         3 . The electronic device of  claim 1 , wherein each of the conductors is formed by a eutectic bonding of an In—Ni alloy system. 
     
     
         4 . The electronic device of  claim 1 , wherein a polymer material of the connection layer comprises an epoxy material, or an acrylic material. 
     
     
         5 . The electronic device of  claim 1 , wherein the polymer material of the connection layer has a solidification temperature of 170-220° C. 
     
     
         6 . The electronic device of  claim 1 , wherein the glass transition temperature is greater than 240° C. 
     
     
       7. A manufacturing method of an electronic device, the method comprising:
 providing a target substrate having a conductive pad, wherein the conductive pad comprises a first metal;   picking up micro semiconductor structures in an array and placing the micro semiconductor structures on the target substrate, the micro semiconductor structures having a conductive electrode, respectively, the conductive electrode comprising a second metal and being disposed on a corresponding micro semiconductor structure, and the conductive electrode being disposed on the corresponding micro semiconductor structure corresponding to the conductive pad disposed on the target substrate; and   eutectic bonding the conductive electrode of the micro semiconductor structures and the corresponding conductive pad on the target substrate by sequentially heating the conductive electrode and the corresponding conductive pad before the conductive electrode and the corresponding conductive pad are contacted with each other.    
     
     
       8. The manufacturing method according to  claim 7 , further comprising coating a polymer material to surround the micro semiconductor structures to a preparation thickness on the target substrate having the conductive pad.  
     
     
       9. The manufacturing method according to  claim 8 , wherein the polymer material is nonconductive.  
     
     
       10. The manufacturing method according to  claim 8 , wherein the polymer material is defined with a viscosity-temperature variation characteristic,
 wherein the polymer material has a first viscosity at a first temperature, a second viscosity at a second temperature, a third viscosity at a third temperature, a fourth viscosity at a fourth temperature, and a fifth viscosity at a fifth temperature,   wherein the first to fifth temperatures are increased sequentially,   wherein the first temperature is a room temperature, and the fifth temperature is a glass transition temperature,   wherein the third viscosity and the fifth viscosity are threshold values,   wherein the third viscosity is a minimum threshold value, and the fifth viscosity is a maximum threshold value, and   wherein the second viscosity is close to the third viscosity.    
     
     
       11. The manufacturing method according to  claim 10 , wherein the first metal and the second metal have a eutectic temperature, and the eutectic temperature is between the third temperature and the fourth temperature.  
     
     
       12. The manufacturing method according to  claim 11 , further comprising:
 heating the micro semiconductor structures, the polymer material, and the target substrate from the first temperature to the fourth temperature:   starting from the second temperature and onward, applying a first pressure to at least one of the micro semiconductor structures and the target substrate by using a pressing device; and   starting from the eutectic temperature and onward, applying a second pressure to at least one of the micro semiconductor structures and the target substrate by using the pressing device so as to generate an eutectic bonding between the first metal of the conductive pad and the second metal of the conductive electrode.    
     
     
       13. The manufacturing method according to  claim 10 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the second temperature is lower than the third temperature by approximately 10° C.  
     
     
       14. The manufacturing method according to  claim 10 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the fourth temperature is higher than the third temperature by approximately 90-100° C.  
     
     
       15. The manufacturing method according to  claim 11 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the fourth temperature is higher than the eutectic temperature by approximately 10-40° C.  
     
     
       16. The manufacturing method according to  claim 8 , wherein the first metal and the second metal are indium and gold, respectively, or vice versa.  
     
     
       17. The manufacturing method according to  claim 16 , wherein a ratio of the indium to the gold is 2:1.  
     
     
       18. The manufacturing method according to  claim 8 , wherein the first metal and the second metal are indium and nickel, respectively, or vice versa.  
     
     
       19. The manufacturing method according to  claim 11 , wherein, in the coating of the polymer material to the preparation thickness on the target substrate, the eutectic temperature is within approximately 150-160° C.  
     
     
       20. The manufacturing method according to  claim 19 , wherein, in the coating of the polymer material to the preparation thickness on the target substrate, the eutectic temperature is approximately 160° C.  
     
     
       21. The manufacturing method according to  claim 8 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the polymer material comprises an epoxy material or an acrylic material.  
     
     
       22. The manufacturing method according to  claim 10 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the fifth temperature is greater than 240° C.  
     
     
       23. The manufacturing method according to  claim 8 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the preparation thickness is 2-7 μm.  
     
     
       24. The manufacturing method according to  claim 23 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the preparation thickness is 2, 3, 5, 6, 6.5, or 7 μm.  
     
     
       25. The manufacturing method according to  claim 10 , wherein in the coating of the polymer material to the preparation thickness on the target substrate, the second temperature is 70-110° C.  
     
     
       26. The manufacturing method according to  claim 10 , wherein, in the coating of the polymer material to the preparation thickness on the target substrate, the second temperature is 90° C.  
     
     
       27. The manufacturing method according to  claim 10 , wherein, in the coating of the polymer material to the preparation thickness on the target substrate, the third temperature is 80-120° C.  
     
     
       28. The manufacturing method according to  claim 10 , wherein, in the coating of the polymer material to the preparation thickness on the target substrate, the fourth temperature is 170-220° C.  
     
     
       29. The manufacturing method according to  claim 12 , wherein, in the eutectic bonding, the first pressure is between 1 MPa and 10 MPa, and the applying of the first pressure lasts for 2-40 seconds.  
     
     
       30. The manufacturing method according to  claim 12 , wherein, in the eutectic bonding, the second pressure is between 0.5 MPa and 50 MPa, and the applying of the second pressure lasts for 5-60 seconds.  
     
     
       31. The manufacturing method according to  claim 8 , wherein a material of the target substrate includes polymers, plastics, resins, polyimide, polyethylene naphthalate, polyethylene terephthalate, a metal, foil, glass, quartz, glass fibers, flexible glass, a semiconductor, sapphire, a metal-glass fiber composite board, or a metal-ceramic composite board.  
     
     
       32. The manufacturing method according to  claim 8 , wherein one unit of the conductive pads comprises a pair of conductive pads, and
 wherein the micro semiconductor structures are a dual-electrode structure.    
     
     
       33. The manufacturing method according to  claim 8 , wherein the picking up of the micro semiconductor structures in the array comprises:
 picking up the micro semiconductor structures in the array, which have the conductive electrode, from the entire or a part of an initial substrate.    
     
     
       34. The manufacturing method according to  claim 8 , wherein a dimension of the micro semiconductor structures is 25 μm or less.  
     
     
       35. The manufacturing method according to  claim 8 , wherein a pattern circuit is disposed on the target substrate, and the conductive pad is disposed on the pattern circuit.  
     
     
       36. The manufacturing method according to  claim 12 , wherein a dimension of the pressing device is smaller than that of the target substrate.  
     
     
       37. The manufacturing method according to  claim 12 , further comprising:
 solidifying or curing the polymer material to reach stable bonds between polymer molecules of the polymer material so as to form a connection layer.    
     
     
       38. The manufacturing method according to  claim 37 , wherein a dimension of the pressing device is smaller than that of the connection layer.  
     
     
       39. The manufacturing method according to  claim 8 , wherein the micro semiconductor structures include at least one of a transistor, a photovoltaic device, a solar cell, a diode, a light-emitting diode, a laser diode, a p-n junction diode, a photodiode, an integrated circuit, and a sensor.